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TCS800
800 Watts, 50 Volts, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The TCS800 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030 MHz, with the pulse
width and duty required for TCAS applications. The device has gold thin-film
metallization and diffused ballasting for proven highest MTTF. The transistor
includes input and output prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
CASE OUTLINE
55SM Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C1 1944 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 65 V
Emitter to Base Voltage (BVebo) 3.5 V
Collector Current (Ic) 50 A
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature +230 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN
TYP MAX UNITS
Pout Power Out F = 1030 MHz 800 W
Pin Power Input 126 W
Pg Power Gain 8.0 9.0 dB
ηc Collector Efficiency 45 %
RL Input Return Loss
VCC = 50 Volts
PW = 32 µsec
DF = 1%
-12 dB
Pd Pulse Droop 0.5 dB
VSWR Load Mismatch Tolerance
F = 1030 MHz 4:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo* Emitter to Base Breakdown Ie = 70 mA 3.5 V
BVces Collector to Emitter Breakdown Ic = 100 mA 65 V
hFE* DC – Current Gain Vce = 5V, Ic = 5A 20
θjc1 Thermal Resistance 0.09 °C/W
NOTE 1: At rated output power and pulse conditions.
*: Not measurable due to internal EB returns
Rev B – Sept. 2005