1C4D02120E Rev. J, 10-2019
C4D02120E
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
• 1.2kV Schottky Rectier
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching
• Extremely Fast Switching
• Positive Temperature Coecient on VF
Benets
• Replace Bipolar with Unipolar Rectiers
• Essentially No Switching Losses
• Higher Eciency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies (SMPS)
• Boost Diodes in PFC or DC/DC stages
• Free Wheeling Diodes in Inverter stages
• LED Lighting Power Supplies
• AC/DC Converters
Package
TO-252-2
Part Number Package Marking
C4D02120E TO-252-2 C4D02120
PIN 1
PIN 2 CASE
Maximum Ratings (TC=25°C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
VRRM Repetitive Peak Reverse Voltage 1200 V
VRSM Surge Peak Reverse Voltage 1300 V
VDC DC Blocking Voltage 1200 V
IFMaximum DC Current
10
5
2
A
TC=25˚C
TC=135˚C
TC=165˚C
Fig. 3
IFRM Repetitive Peak Forward Surge Current 13
8.4 ATC=25˚C, tP=10 ms, Half Sine pulse
TC=110˚C, tP=10 ms, Half Sine pulse
IFSM Non-Repetitive Peak Forward Surge Current 19
16.5 ATC=25˚C, tP=10 ms, Half Sine pulse
TC=110˚C, tP=10 ms, Half Sine pulse Fig. 8
IF,Max Non-Repetitive Peak Forward Current 200
160 ATC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse Fig. 8
Ptot Power Dissipation 60
26 WTC=25˚C
TC=110˚C Fig. 4
dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-650V
∫i2dt i2t value 1.8
1.4 A2sTC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
T
J
, T
stg
Operating Junction and Storage Temperature -55 to
+175 ˚C
VRRM = 1200 V
IF (TC=135˚C)  =   5 A
Qc = 11 nC
2C4D02120E Rev. J, 10-2019
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForward Voltage 1.4
1.9
1.8
3VIF = 2 A TJ=25°C
IF = 2 A TJ=175°C Fig. 1
IRReverse Current 10
40
50
150 μAVR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C Fig. 2
QCTotal Capacitive Charge 11 nC
VR = 800 V, IF = 2A
di/dt = 200 A/μs
TJ = 25°C
Fig. 5
C Total Capacitance
167
11
8
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Fig. 6
ECCapacitance Stored Energy 3.2 μJ VR = 800 V Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
RθJC Thermal Resistance from Junction to Case 2.5 °C/W Fig. 9
Typical Performance
Figure 1. Forward Characteristics
0
0.5
1
1.5
2
2.5
3
3.5
4
00.5 11.5 22.5 33.5
Figure 2. Reverse Characteristics
0
100
200
300
400
500
600
0500 1000 1500 2000
IF (A)
VF (V)
IR (μA)
VR (V)
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
3C4D02120E Rev. J, 10-2019
Figure 3. Current Derating
30
40
50
60
70
0
10
20
25 50 75 100 125 150 175
Typical Performance
15
20
25
30
35
0
5
10
15
25
50
75
100
125
150
175
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
0
20
40
60
80
100
120
140
160
180
0.1 110 100 1000
Figure 4. Power Derating
Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
IF(peak) (A)
TC ˚C
PTot (W)
TC ˚C
C (pF)
VR (V)
0
2
4
6
8
10
12
14
16
0200 400 600 800 1000
VR (V)
Qc (nC)
4C4D02120E Rev. J, 10-2019
3.0
4.0
5.0
6.0
0.0
1.0
2.0
0 200 400 600 800 1000
E
C
VRReverse Voltage (V)
Typical Performance
100
1000
IFSM(A)
10
1.E-05 1.E-04 1.E-03 1.E-02
tp(s)
1000
100
10
Figure 7. Typical Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
tp (s)
IFSM (A)
TJ_initial = 25°C
TJ_initial = 110°C
VR (V)
6
5
4
3
2
1
0
0 200 400 600 800 1000
EC(mJ)
1E-05 1E-04 1E-03 1E-02
Figure 9. Transient Thermal Impedance
100E-3
1
0.5
0.3
0.1
0.05
0.02
10E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
0.01 SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
5C4D02120E Rev. J, 10-2019
Recommended Solder Pad Layout
Part Number Package Marking
C4D02120E TO-252-2 C4D02120
TO-252-2
Package Dimensions
Package TO-252-2
Note: Recommended soldering proles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
θ
Tjb June 2015
MX+DI+PSI
SYMBOL
MILLIMETERS
MIN
MAX
A
2.159
2.413
A1
0
0.13
b
0.64
0.89
b
2
0.653
1.143
b
3
5.004
5.6
c
0.457
0.61
c2
0.457
0.864
D
5.867
6.248
D1
5.21
-
E
6.35
6.73
E1
4.32
-
e
4.58 BSC
H
9.65
10.414
L
1.106
1.78
L2
0.51 BSC
L3
0.889
1.27
L4
0.64
1.01
Ɵ
0°
8°
66 C4D02120E Rev. J, 10-2019
Copyright © 2019 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/power/tools-and-support/product-ecology.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac debrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air trac control systems.
Notes
• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Related Links
Diode Model
Note: TJ = Diode Junction Temperature in Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VfT = VT+If*RT
VT = 0.9592+(TJ* -1.20*10-3)
RT = 0.1673+(TJ* 2.10*10-3)