TB0640H - TB3500H
Document number: DS30360 Rev. 10 - 2 1 of 6
www.diodes.com May 2011
© Diodes Incorporated
TB0640H - TB3500H
100A BIDIRECTIONAL S U RFA CE MO UNT THYRISTOR SURGE PROTECTIVE DEVICE
Features
• 100A Peak Pulse Current @ 10/1000μs
• 400A Peak Pulse Current @ 8/20μs
• 58 - 320V Stand-Off Voltages
• Oxide-Glass Passivated Junction
• Bidirectional Protection In a Single Device
• High Off-State Impedance and Low On-State Voltage
• Helps Equipment Meet GR-1089-CORE, IEC 61000-4-5, FCC
Part 68, ITU-T K.20/K.21, and UL497B
• UL Listed Under Recognized Component Index, File Number
156346
• Lead Free Finish/RoHS Compliant (Note 1)
• Green Molding Compound (No Halogen and Antimony)
(Note 2)
Mechanical Data
• Case: SMB
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Lead Free Plating (Matte Tin Finish). Solderable per
MIL-STD-202, Method 208
• Polarity: None; Bidirectional Devices Have No Polarity Indicator
• Weight: 0.093 grams (approximate)
Ordering Information (Note 3)
Part Number Case Packaging
TB0640H-13-F SMB 3000/Tape & Reel
TB0720H-13-F SMB 3000/Tape & Reel
TB0900H-13-F SMB 3000/Tape & Reel
TB1100H-13-F SMB 3000/Tape & Reel
TB1300H-13-F SMB 3000/Tape & Reel
TB1500H-13-F SMB 3000/Tape & Reel
TB1800H-13-F SMB 3000/Tape & Reel
TB2300H-13-F SMB 3000/Tape & Reel
TB2600H-13-F SMB 3000/Tape & Reel
TB3100H-13-F SMB 3000/Tape & Reel
TB3500H-13-F SMB 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Green
Top View Bottom View
xxxxx = Product type marking code (See table on page 2)
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year (ex: 6 for 2006)
WW = Week code (01 to 53)
YWW
xxxxx
TB0640H - TB3500H
Document number: DS30360 Rev. 10 - 2 2 of 6
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© Diodes Incorporated
TB0640H - TB3500H
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Non-Repetitive Peak Impulse Current @10/1000us I
pp
100 A
Non-Repetitive Peak On-State Current @8.3ms (one-half cycle) ITSM 50 A
Typical Positive Temperature Coefficient for Breakdown Voltage ΔVBR/ΔTJ 0.1 %/°C
Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Lead R
θ
JL 20 °C/W
Thermal Resistance, Junction to Ambient R
θ
JA 100 °C/W
Junction Temperature Range TJ -40 to +150 °C
Storage Temperature Range TSTG -55 to +150 °C
Maximum Rated Surge Waveform
Waveform Standard Ipp (A)
2/10μs GR-1089-CORE 500
8/20μs IEC 61000-4-5 400
10/160μs FCC Part 68 250
10/700μs (Note 4) ITU-T, K.20/K.21 200
10/560μs FCC Part 68 160
10/1000μs GR-1089-CORE 100
Notes: 4. Applied 6kV, 10/700μs waveform
I , PEAK PULSE CURRENT (%)
PP
Peak Value (I )
pp
Half Value
t = rise time to peak value
t = decay time to half value
r
p
t
r
t
p
TB0640H - TB3500H
Document number: DS30360 Rev. 10 - 2 3 of 6
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© Diodes Incorporated
TB0640H - TB3500H
Electrical Characteristics @TA = 25°C unless otherwise specified
Part Number
Maximum
Rated
Repetitive
Off-State
Voltage
Maximum
Off-State
Leakage
Current @
VDRM
Maximum
Breakover
Voltage
Maximum
On-State
Voltage
@ IT = 1A
Breakover
Current
IBO
Holding Current
IH
Typical
Off-State
Capacitance Marking
Code
VDRM (V) IDRM (uA) VBO (V) VT (V) Min
(mA) Max
(mA) Min
(mA) Max
(mA) CO (pF)
TB0640H 58 5 77 3.5 50 800 150 800 200 T064H
TB0720H 65 5 88 3.5 50 800 150 800 200 T072H
TB0900H 75 5 98 3.5 50 800 150 800 200 T090H
TB1100H 90 5 130 3.5 50 800 150 800 120 T110H
TB1300H 120 5 160 3.5 50 800 150 800 120 T130H
TB1500H 140 5 180 3.5 50 800 150 800 120 T150H
TB1800H 160 5 220 3.5 50 800 150 800 120 T180H
TB2300H 190 5 265 3.5 50 800 150 800 80 T230H
TB2600H 220 5 300 3.5 50 800 150 800 80 T260H
TB3100H 275 5 350 3.5 50 800 150 800 80 T310H
TB3500H 320 5 400 3.5 50 800 150 800 80 T350H
Symbol Parameter
VDRM Stand-off Voltage
IDRM Leakage current at stand-off voltage
VBR Breakdown voltage
IBR Breakdown current
VBO Breakover voltage
IBO Breakover current
IH Holding current (Note 5)
VT On state voltage
IPP Peak pulse current
CO Off-state capacitance (Note 6)
Notes: 5. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not
exceed 30ms.
6. Off-state c apacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias.
I
BO
V
BR
V
DRM
V
T
V
BO
I
H
I
V
I
BR
I
DRM
I
PP
TB0640H - TB3500H
Document number: DS30360 Rev. 10 - 2 4 of 6
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© Diodes Incorporated
TB0640H - TB3500H
I , OFF-STATE CURRENT (uA)
(DRM)
T , JUNCTION TEMPERATURE (°C)
Fig . 1 Off- Stat e C ur r ent v s. Junct i on Tem per at ur e
J
0.001
0.01
1
0.1
10
100
-25 025 50 75 100 125 150
V = 50V
DRM
0.9
T , JUNCTION TEMPERATURE (°C)
Fig . 2 Relative Variatio n of Br eakdow n Volt age
vs. Junction Temperature
J
0.95
1
1.05
1.1
1.15
1.2
-50 -25 0 25 50 75 100 125 150 175
N
O
R
MALIZED B
R
EAKD
O
W
N
V
O
L
T
A
G
E
1
1.05
0.95
-50
N
O
R
MALIZED B
R
EAKD
O
WN V
O
L
T
A
G
E
1.1
-25 075
50
25 125
100 175
150
T , JUNCTION TEMPERATURE
Fig . 3 Relative Variation of Breakover Volt age
vs. Ju nction Temp er atur e
J
(ºC)
1
10
100
11.5 32.524
3.5 5
4.5
I,
O
N-S
T
A
T
E
C
U
R
R
EN
T
(A)
T
V , ON-STATE VOLTAGE (V)
Fig. 4 On-State Current vs. On-State Volta ge
T
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.4
1.3
1.2
-50 -25 025 50 10075 125
N
O
R
MALIZED
H
O
LDIN
G
C
U
R
R
EN
T
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 Relative Variation of Holding Current vs.
Junction Tem per at ure
0.1
1
110100
N
O
R
MALIZED
C
A
P
A
C
I
T
A
N
C
E
V , REVERSE VOL TAGE (V)
Fig. 6 Relative Variation of Junction Capacitance
vs. R everse Volt age B ia s
R
TB0640H - TB3500H
Document number: DS30360 Rev. 10 - 2 5 of 6
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© Diodes Incorporated
TB0640H - TB3500H
Package Outline Dimensions
Suggested Pad Layout
SMB
Dim Min Max
A 3.30 3.94
B 4.06 4.57
C 1.96 2.21
D 0.15 0.31
E 5.00 5.59
G 0.05 0.20
H 0.76 1.52
J 2.00 2.50
All Dimensions in mm
Dimensions Value (in mm)
Z 6.8
G 1.8
X 2.3
Y 2.5
C 4.3
A
B
C
D
G
HE
J
Z
X
C
G
Y
TB0640H - TB3500H
Document number: DS30360 Rev. 10 - 2 6 of 6
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© Diodes Incorporated
TB0640H - TB3500H
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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