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®
P01 Series
SENSITIVE 0.8A SCRs
September 2000 - Ed: 3
MAIN FEATUR ES:
DESCRIPTION
Thanks to highly sensitive triggering levels, the
P01 SCR series is suitable for all applications
where available gate current is limited, such as
ground fault circuit interruptors, pilot circuits in
solid state relays, stand-by m ode power supplies,
smok e and alarm detectors .
Available in through-hole or surface mount pack-
ages, the voltage capability of this series has been
upgrated since its introduction, to reach 600 V.
Symbol Value Unit
IT(RMS) 0.8 A
VDRM/VRRM 400 and 600 V
IGT 5 to 200 µA
ABSOLUTE RATINGS (li m iting values)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(180° conduction angle) TO-92 Tl = 55°C 0.8 A
SOT-223 Tamb = 70°C
IT(AV) Average on-state current
(180° conduction angle) TO-92 Tl = 55°C 0.5 A
SOT-223 Tamb = 70°C
ITSM Non repetitive surge peak on-state
current tp = 8.3 ms Tj = 25°C 8A
tp = 10 ms 7
I²tI
²
t Value for fusing tp = 10ms Tj = 25°C 0.24 A2S
dI/dt Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 1 A
PG(AV) Average gate power dissipation Tj = 125°C 0.1 W
Tstg
Tj Storage junction temperature range
Operatin g junction temp erature range - 40 to + 150
- 40 to + 125 °C
G
A
K
TO-92
(P01xxA) SOT-223
(P01xxN)
P01 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25°C , unless otherwi se specified)
THERMA L RESISTANCES
S = Copper surfac e under tab
PRODUCT SELECTO R
Symbol Test Conditions P01xx Unit
02 11 18
IGT VD = 12 V RL = 140 ΩMIN. - 4 0.5 µA
MAX. 200 25 5
VGT MAX. 0.8 V
VGD VD = VDRM RL = 3.3 kΩ RGK = 1 kΩTj = 125°C MIN. 0.1 V
VRG IRG = 10 µA MIN. 8V
I
H
I
T
= 50 mA RGK = 1 kΩMAX. 5 mA
ILIG = 1 mA RGK = 1 kΩMAX. 6mA
dV/dt VD = 67 % VDRM RGK = 1 kΩ Tj = 125°C MIN. 75 80 75 V/µs
VTM ITM = 1.6 A tp = 380 µs Tj = 25°C MAX. 1.95 V
Vt0 Threshold voltage Tj = 125°C MAX. 0.95 V
RdDynamic resistance Tj = 125°C MAX. 600 mΩ
IDRM
IRRM
VDRM = VRRM = 400 V RGK = 1 kΩTj = 25°C MAX. 1µA
VDRM = VRRM = 600 V RGK = 1 kΩ10 µA
VDRM = VRRM RGK = 1 kΩTj = 125°C MAX. 100 µA
Symbol Parameter Value Unit
Rth(j-i) Junction to case (DC) TO-92 80 °C/W
Rth(j-t) Junction to tab (DC) SOT-223 30
°C/WRth(j-a) Junction to ambient TO-92 150
S = 5 cm²SOT-223 60
Part Number Voltage Sensitivity Package
400 V 600 V
P0102DA X 200 µA TO-92
P0102DN X 200 µA SOT-223
P0102MA X 200 µA TO-92
P0102MN X 200 µA SOT-223
P0111DA X 25 µA TO-92
P0111DN X 25 µA SOT-223
P0111MA X 25 µA TO-92
P0111MN X 25 µA SOT-223
P0118DA X 5 µA TO-92
P0118DN X 5 µA SOT-223
P0118MA X 5 µA TO-92
P0118MN X 5 µA SOT-223
P01 Series
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ORDERING INFO RMATION
OTHER INFORMATION
Note: x x = sensitivity, y = voltage
Part Number Marking Weight Base Quantity Packing mode
P01xxyA 1AA3 P01xxyA 0.2 g 2500 Bulk
P01xxyA 2AL3 P01xxyA 0.2 g 2000 A mmop ack
P0102yN 5AA4 P2y 0.12 g 1000 Tape & reel
P0111yN 5AA4 P1y 0.12 g 1000 Tape & reel
P0118yN 5AA4 P8y 0.12 g 1000 Tape & reel
Fig. 1: Maximum average power dissipation
versu s average on-state current. Fig. 2-1: Average and D.C. on-state current
versus lead temperature.
Fig. 2-2: Average and D.C. on-state current
versu s ambient temperature (device mount ed on
FR4 with recommended pad layout for SOT-223).
Fig. 3: Relative variation of thermal impedance
juncti on to ambient versus pulse durati on.
P 01 02 D N 1AA3
SENSITIVE
SCR
SERIES
CURRENT: 0.8A
SENSITIVITY:
02: 200µA
11: 25µA
18: 5
µ
A
VOLTAGE:
D: 400V
M: 600V
PACKAGE:
A:TO-92
N: SOT-223
PACKING MODE:
1AA3:TO-92 bulk (preferred)
2AL3:TO-92 ammopack
5AA4: SOT-223Tape & Reel
Blank
P(W)
0.0 0.1 0.2 0.3 0.4 0.5 0.6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 IT(av)(A)
Tlead orTtab (°C)
1.1
1.0
0.9
0.7
0.8
0.5
0.6
0.1
0.4
0.3
0.2
0.0 0255075 100 125
IT(av)(A)
1.2
1.1
1.0
0.8
0.9
0.6
0.7
0.2
0.5
0.4
0.3
0.1
0255075 100 125
0.0 Tamb(°C)
K = [Zth(j-a)/Rth(j-a)]
tp(s)
1.00
0.10
0.01
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
P01 Series
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Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical value s).
Fi g. 5 : Relativ e variation of holding current vers us
gate-cathode resistance (typi cal values).
Fig. 6: Relative variation of dV/dt immunity
versu s gate-cathode res istance (typical values ). Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical v alues).
Fig. 8: Surge peak on-state current versus
num ber of cycle s. Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 m s, and corres ponding value of I²t.
IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C
6
5
4
3
2
1
00-20-40 20 40 60 80 100 120 140
Tj(°C)
IH[Rgk]/IH[Rgk=1k ]Ω
Rgk(kΩ)
0.4 0.6 0.8 1.00.2 1.6 1.8 2.01.2 1.4
dV/dt[Rgk] / dV/dt[Rgk=1k ]Ω
Rgk(kΩ)
0
0.1
1.0
10.0 dV/dt[Cgk] / dV/dt[Rgk=1k ]Ω
21
03
4
5
6
7
0
2
4
6
8
10
Cgk(nF)
1 10 100 1000
0
1
2
3
4
5
6
7
8ITSM(A)
Non repetitive
Tj initial=25°C
Tamb=25°C
Repetitive
Numberofcycles
Onecycle
tp=10ms
ITSM(A), I t(A s)
22
100.0
10.0
1.0
0.1
0.01 0.10 1.00 10.00
tp(ms)
P01 Series
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Fig. 10: On-state characteristics (maximum
values). Fig. 11: SOT-22 3 Therm al resistance junction to
ambi ent versus copper s urface und er tab (E poxy
printed circuit board FR4, copper thickness:
35 µm).
Ω
ITM(A)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
1E+1
1E+0
1E-1
1E-2 VTM(V)
Rth(j-a) (°C/W)
S (cm )
2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
130
120
110
100
90
80
70
60
50
40
30
20
10
0
PACKAGE MECHANICAL DATA
TO-92 (Plastic)
D
F
a
E
B
A
C
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.35 0.053
B 4.70 0.185
C 2.54 0.100
D 4.40 0.173
E 12.70 0.500
F 3.70 0.146
a 0.50 0.019
P01 Series
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FOOTPRINT DIMENSIONS ( in millime t e rs )
SOT-223 (Plastic)
PACKAGE MECHANICAL DATA
SOT-223 (Plastic)
A
A1
B
e1
D
B1
HE
e
c
V
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.80 0.071
A1 0.02 0.1 0.0008 0.004
B 0.60 0.70 0.85 0.024 0.027 0.034
B1 2.90 3.00 3.15 0.114 0.118 0.124
c 0.24 0.26 0.35 0.009 0.010 0.014
D 6.30 6.50 6.70 0.248 0.256 0.264
e 2.3 0.090
e1 4.6 0.181
E 3.30 3.50 3.70 0.130 0.138 0.146
H 6.70 7.00 7.30 0.264 0.276 0.287
V10° max
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