TMA166H-L - Allegro MicroSystems, LLC

TMA166H-L

Features and Benefits

▪ Exceptional reliability

▪ Small fully-molded SIP package with heatsink mounting

for high thermal dissipation and long life

▪ VDRM of 600 V

▪ 16 ARMS on-state current

▪ Uniform switching

▪ UL Recognized Component

Triac (Bidirectional Triode Thyristor)

Typical Applications

Applications

▪ Residential and commercial appliances: vacuum cleaners,

rice cookers, TVs, home entertainment

▪ White goods: washing machines

▪ Office automation power control, photocopiers

▪ Motor control for small tools

▪ Temperature control, light dimmers, electric blankets

▪ General use switching mode power supplies (SMPS)

Description

This Sanken triac (bidirectional triode thyristor) is designed

for AC power control, providing reliable, uniform switching

for full-cycle AC applications.

In comparison with other products on the market, the TMA166H-L

provides increased isolation voltage (1800 VACRMS),

guaranteed for up to 1 minute, and greater peak nonrepetitive

off-state voltage, VDSM (700 V). In addition, commutation

dv/dt and (dv/dt)c are improved.

Halogen

Lamp

Gate

Controller

Heater control

(for example, LBP. PPC, MFP)

Two-phase motor control

(for example, washing machine)

In-rush current control

(for example, SMPS)

Package: 3-pin SIP (TO-220F)

Not to scale

28105.26

Triac (Bidirectional Triode Thyristor)

TMA166H-L

Absolute Maximum Ratings

Characteristic Symbol Notes Rating Units

Peak Repetitive Off-State Voltage VDRM RGREF = ∞600 V

Peak Non-Repetitive Off-State Voltage VDSM RGREF = ∞700 V

Isolation Voltage VISO AC RMS applied for 1 minute between lead and case 1800 V

RMS On-State Current IT(RMS)

50/60 Hz full cycle sine wave,

total Conduction angle (α+) + (α–) = 360°,

TC = 65°C

16 A

Surge On-State Current ITSM

f = 60 Hz Full cycle sine wave, peak value, non-repetitive,

initial TJ = 25°C

168 A

f = 50 Hz 160 A

I2t Value for Fusing I2t Value for 50 Hz half cycle sine wave, 1 cycle, ITSM = 160 A 128 A2

• s

Critical Rising Rate of On-State Current di/dt IT = IT(RMS) × √2, VD = VDRM × 0.5, f ≤ 60 Hz, tgw ≥ 10 μs,

tgr ≤ 250 ns, Igp ≥ 60 mA (refer to Gate Trigger Current diagram) 25 A/μs

Peak Gate Current IGM f ≥ 50 Hz, duty cycle ≤ 10% 2 A

Peak Gate Power Dissipation PGM f ≥ 50 Hz, duty cycle ≤ 10% 5 W

Average Gate Power Dissipation PGM(AV) 0.5 W

Junction Temperature TJ–40 to 125 ºC

Storage Temperature Tstg –40 to 125 ºC

Terminal List Table

Number Name Function

1 T1 Main terminal, gate referenced

2 T2 Main terminal connect to signal side

3 G Gate control

Pin-out Diagram

Thermal Characteristics May require derating at maximum conditions

Characteristic Symbol Test Conditions Value Units

Package Thermal Resistance

(Junction to Case) RθJC For AC 3.3 ºC/W

All performance characteristics given are typical values for circuit or

system baseline design only and are at the nominal operating voltage and

an ambient temperature, TA, of 25°C, unless oth er wise stated.

123

Selection Guide

Part Number Package Packing

TMA166H-L 3-pin fully molded SIP with heatsink mount 50 pieces per tube

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Triac (Bidirectional Triode Thyristor)

TMA166H-L

ELECTRICAL CHARACTERISTICS

Characteristics Symbol Test Conditions Min. Typ. Max. Unit

Off-State Leakage Current IDRM

VD = VDRM, TJ = 125°C, RGREF = ∞ using test circuit 1 – – 2.0 mA

VD = VDRM, TJ = 25°C, RGREF = ∞ using test circuit 1 – – 100 μA

On-State Voltage VTM IT = 20 A, TJ = 25°C – – 1.45 V

Gate Trigger Voltage VGT

Quadrant I: T2+, G+

VD = 12 V, RL = 20 Ω, TJ = 25°C

– – 1.5 V

Quadrant II: T2+, G– – – 1.5 V

Quadrant III: T2–, G– – – 1.5 V

Gate Trigger Current IGT

Quadrant I: T2+, G+

VD = 12 V, RL = 20 Ω, TJ = 25°C

– – 30 mA

Quadrant II: T2+, G– – – 30 mA

Quadrant III: T2–, G– – – 30 mA

Gate Non-trigger Voltage VGD VD = VDRM × 0.5, RL = 4 kΩ, TJ = 125°C 0.2 – – V

Critical Rising Rate of

Off-State Voltage during

Commutation*

(dv/dt)c VD = 400 V, (di/dt)c = –8 A/ms, ITP = 2 A, TJ = 125°C 10 – – V/μs

Critical Rising Rate of

Off-StateVoltage dv/dt VD = VDRM × 0.66, RGREF = ∞ using test circuit 1, TJ = 125°C 200 – – V/μs

*Where ITP is the peak current through T2 to T1.

Test Circuit 1

Gate Trigger Current

Gate Trigger Characteristics

RGREF = ∞

tgr

tgw

igp

T1 [ – ]

T2 [ + ]

G [ – ]

T1 [ – ]

T2 [ + ]

G [ + ]

T1 [ + ]

T2 [ – ]

G [ – ]

T1 [ + ]

T2 [ – ]

G [ + ]

Quadrant II Quadrant I

+IGT

+T2

–T2

Polarities referenced to T1

–IGT

Quadrant III Quadrant IV

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Triac (Bidirectional Triode Thyristor)

TMA166H-L

AA = Conduction angle

Supply VAC

On-State

Currrent

VGATE

VGT

ITSM

Commutation Timing Diagrams

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Triac (Bidirectional Triode Thyristor)

TMA166H-L

Performance Characteristics at TA = 25°C

0.1

100

0.6 1.0 1.4 1.8 2.2 2.6 3.0

(max) (V)

(max) (A)

150

125

100

180

160

140

120

100

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

1 10 100

TSM

(A)

0 5 10 15 20 0 10 15520

0.1

100

10 100 1000 10 000 –60 –40 –20 20 40 60 80 100 120 1400

0.1

Maximum On-State

Current versus

Maximum On-State

Voltage

Gate Voltage

versus

Gate Current

Surge On-State

Current versus

Quantity of

Cycles

Case Temperature

versus On-State

RMS Current

On-State Average

Power Dissipation

versus Maximum

On-State

RMS Current

Proportional Change

of Typical

Trigger Voltage

versus

Junction Temperature

TJ = 125°C

f = 50 Hz

full cycle sine wave

total Conduction angle

(A+) + (A–) = 360°

initial TJ = 125°C

full cycle sine wave

total Conduction angle

(A+) + (A–) = 360°

full cycle sine wave

total Conduction angle

(A+) + (A–) = 360°

TJ = 25°C

T(AV)

(W)

T(RMS)

(A)

(V)

(mA)

Quantity of Cycles

(°C)

GT (TJ)

(V) / V

GT (TJ = 25°C )

(V)

Proportional Change

of Typical

Trigger Current

versus

Junction Temperature

GT (TJ)

(A) / I

GT (TJ = 25°C )

(A)

0.1

Proportional Change

of Typical

Holding Current

versus

Junction Temperature

H (TJ)

(A) / I

H (TJ = 25°C )

(A)

TJ (°C)

–60 –40 –20 20 40 60 80 100 120 1400

TJ (°C)

–60 –40 –20 20 40 60 80 100 120 1400

TJ (°C)

Quadrant I (T2+, G+)

Quadrant II (T2+, G–)

Quadrant III (T2–, G–)

RGREF = 1 kΩ

65°C

VGM = 10 V

VGT (–40°C)

= 2 V VGT (25°C)

= 1.5 V

VGD = 0.2 V

IGM = 2 A

IGT (–40°C)

= 100 mA

IGT (25°C) = 30 mA

5 W

G(AV)

0.5 W

T(RMS)

(max) (A)

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Triac (Bidirectional Triode Thyristor)

TMA166H-L

0.1

0.001 0.01 0.1 1 10 100

(°C/W)

Transient Thermal Impedence versus Triac Voltage Pulse Duration

For AC

(s)

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Triac (Bidirectional Triode Thyristor)

TMA166H-L

Leadframe plating Pb-free. Device

meets RoHS requirements.

10.16 ±0.3

Ø3.2 ±0.2

2.54 ±0.2

2.76 ±0.2

Terminal dimension at case surface

0.5+0.15

–0.1

15.87 ±0.3

15.8 ±0.29.75 ±0.5 3.3 ±0.2

Branding

Area

XXXXXXXX

XXXXX XXXXX

Branding codes (exact appearance at manufacturer discretion):

1st line, type: MA166H

2nd line left, lot: YMDDR

Where: Y is the last digit of the year of manufacture

M is the month (1 to 9, O, N, D)

DD is the date

R is a tracking letter

123

2.54 ±0.2

0.8 ±0.15

6.68 ±0.27.92 ±0.2

Terminal core material: Cu

Terminal treatment: Sn plating

Package: TO-220F

Dimensions in millimeters

4.7 ±0.2

View A

0.5 MAX

View A

TO-220F Package Outline Drawing

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Triac (Bidirectional Triode Thyristor)

TMA166H-L

533 7

Packing Specification

Tube Packing

590

130

330

570

155

50 pieces per tube

20 tubes per layer

1 layer per inner carton

1000 pieces per inner carton

4 inner cartons per outer carton

4000 pieces per outer carton

Dimensions in millimeters

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Triac (Bidirectional Triode Thyristor)

TMA166H-L

WARNING — These devices are designed to be operated at lethal voltages and energy levels. Circuit designs

that embody these components must conform with applicable safety requirements. Pre cau tions must be

taken to prevent accidental contact with power-line potentials. Do not connect ground ed test equipment.

The use of an isolation transformer is recommended during circuit development and breadboarding.

Because reliability can be affected adversely by improper storage

environments and handling methods, please observe the following

cautions.

Cautions for Storage

• Ensure that storage conditions comply with the standard

temperature (5°C to 35°C) and the standard relative humidity

(approximately 40% to 75%); avoid storage locations that

experience extreme changes in temperature or humidity.

• Avoid locations where dust or harmful gases are present and

avoid direct sunlight.

• Reinspect for rust on leads and solderability of products that have

been stored for a long time.

Cautions for Testing and Handling

When tests are carried out during inspection testing and other

standard test periods, protect the products from power surges

from the testing device, shorts between adjacent products, and

shorts to the heatsink.

Remarks About Using Silicone Grease with a Heatsink

• When silicone grease is used in mounting this product on a

heatsink, it shall be applied evenly and thinly. If more silicone

grease than required is applied, it may produce stress.

• Coat the back surface of the product and both surfaces of the

insulating plate to improve heat transfer between the product and

the heatsink.

• Volatile-type silicone greases may permeate the product and

produce cracks after long periods of time, resulting in reduced

heat radiation effect, and possibly shortening the lifetime of the

product.

• Our recommended silicone greases for heat radiation purposes,

which will not cause any adverse effect on the product life, are

indicated below:

Type Suppliers

G746 Shin-Etsu Chemical Co., Ltd.

YG6260 Momentive Performance Materials

SC102 Dow Corning Toray Silicone Co., Ltd.

Heatsink Mounting Method

• Torque When Tightening Mounting Screws. Thermal resistance

increases when tightening torque is low, and radiation effects are

decreased. When the torque is too high, the screw can strip, the

heatsink can be deformed, and distortion can arise in the product frame.

To avoid these problems, observe the recommended tightening torques

for this product package type 0.490 to 0.686 N•m (5 to 7 kgf•cm).

• For effective heat transfer, the contact area between the product and

the heatsink should be free from burrs and metal fragments, and the

heatsink should be flat and large enough to contact over the entire side

of the product, including mounting flange and exposed thermal pad.

• The mounting hole in customer-supplied heatsink must be less than

Ø4 mm; this includes the diameter of any dimple around punched holes.

This is to prevent possible deflection and cracking of the product case

when fastened to the heatsink.

Soldering

• When soldering the products, please be sure to minimize the

working time, within the following limits:

260°C 10 s

350°C 3 s

• Soldering iron should be at a distance of at least 1.5 mm from the

body of the products

Typical Mounting

Configuration

M3 Screw

Device

Heatsink

Flat Washer

Split Washer

M3 Nut

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Triac (Bidirectional Triode Thyristor)

TMA166H-L

The products described herein are manufactured in Ja pan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc.

Sanken and Allegro reserve the right to make, from time to time, such de par tures from the detail spec i fi ca tions as may be re quired to per mit im-

prove ments in the per for mance, reliability, or manufacturability of its prod ucts. Therefore, the user is cau tioned to verify that the in for ma tion in this

publication is current before placing any order.

When using the products described herein, the ap pli ca bil i ty and suit abil i ty of such products for the intended purpose shall be reviewed at the users

responsibility.

Although Sanken undertakes to enhance the quality and reliability of its prod ucts, the occurrence of failure and defect of semi con duc tor products at

a certain rate is in ev i ta ble.

Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems

against any possible injury, death, fires or damages to society due to device failure or malfunction.

Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equip ment or apparatus

(home ap pli anc es, office equipment, tele com mu ni ca tion equipment, measuring equipment, etc.). Their use in any application requiring radiation

hardness assurance (e.g., aero space equipment) is not supported.

When considering the use of Sanken products in ap pli ca tions where higher reliability is re quired (transportation equipment and its control systems

or equip ment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written con-

firmation of your spec i fi ca tions.

The use of Sanken products without the written consent of Sanken in applications where ex treme ly high reliability is required (aerospace equip-

ment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited.

The information in clud ed herein is believed to be accurate and reliable. Ap pli ca tion and operation examples described in this pub li ca tion are given

for reference only and Sanken and Allegro assume no re spon si bil i ty for any in fringe ment of in dus tri al property rights, intellectual property rights, or

any other rights of Sanken or Allegro or any third party that may result from its use.

Anti radioactive ray design is not considered for the products listed herein.

The contents in this document must not be transcribed or copied without Sanken’s written consent.

This datasheet is based on Sanken datasheet SSE-24298

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

Triac (Bidirectional Triode Thyristor)

TMA166H-L

Asia-Pacific

China

Sanken Electric Hong Kong Co., Ltd.

Suite 1026, Ocean Centre

Canton Road, Tsimshatsui

Kowloon, Hong Kong

Tel: 852-2735-5262, Fax: 852-2735-5494

Sanken Electric (Shanghai) Co., Ltd.

Room 3202, Maxdo Centre

Xingyi Road 8, Changning District

Shanghai, China

Tel: 86-21-5208-1177, Fax: 86-21-5208-1757

Taiwan Sanken Electric Co., Ltd.

Room 1801, 18th Floor

88 Jung Shiau East Road, Sec. 2

Taipei 100, Taiwan R.O.C.

Tel: 886-2-2356-8161, Fax: 886-2-2356-8261

Japan

Sanken Electric Co., Ltd.

Overseas Sales Headquarters

Metropolitan Plaza Building

1-11-1 Nishi-Ikebukuro, Toshima-ku

Tokyo 171-0021, Japan

Tel: 81-3-3986-6164, Fax: 81-3-3986-8637

Korea

Sanken Electric Korea Co., Ltd.

Samsung Life Yeouido Building 16F

23-10, Yeouido-Dong, Yeongdeungpo-gu

Seoul 150-734, Korea

Tel: 82-2-714-3700, Fax: 82-2-3272-2145

Singapore

Sanken Electric Singapore Pte. Ltd.

150 Beach Road, #14-03 The Gateway West

Singapore 189720

Tel: 65-6291-4755, Fax: 65-6297-1744

Europe

Sanken Power Systems (UK) Limited

Pencoed Technology Park

Pencoed, Bridgend CF35 5HY, United Kingdom

Tel: 44-1656-869-100, Fax: 44-1656-869-162

North America

United States

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01606, U.S.A.

Tel: 1-508-853-5000, Fax: 1-508-853-7895

Allegro MicroSystems, Inc.

14 Hughes Street, Suite B105

Irvine, California 92618, U.S.A.

Tel: 1-949-460-2003, Fax: 1-949-460-7837

Worldwide Contacts

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com