PESD24VF1BSFYL - NXP SEMICONDUCTORS

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PESD24VF1BSF

Ultra low capacitance bidirectional ESD protection diode

11 December 2015 Product data sheet

Scan or click this QR code to view the latest information for this product

1. General description

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode

in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD)

package designed to protect one signal line from the damage caused by ESD and other

transients.

2. Features and benefits

•Bidirectional ESD protection of one line

•Ultra low diode capacitance Cd = 0.25 pF

•High reverse standoff voltage VRWM = 24 V

•ESD protection up to ±10 kV according to IEC 61000-4-2

3. Applications

•NFC antenna protection

•Protection of high-speed and standard data lines with high signal levels

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Cddiode capacitance f = 1 MHz; VR = 0 V - 0.25 0.4 pF

VRWM reverse standoff

voltage

- - 24 V

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 K1 cathode (diode 1)

2 K2 cathode (diode 2)

Transparent

top view

DSN0603-2 (SOD962-2)

sym045

NXP Semiconductors PESD24VF1BSF

Ultra low capacitance bidirectional ESD protection diode

Product data sheet 11 December 2015 2 / 12

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PESD24VF1BSF DSN0603-2 Leadless ultra small package; 2 terminals; body 0.6 x

0.3 x 0.3 mm

SOD962-2

7. Marking

Table 4. Marking codes

Type number Marking code

PESD24VF1BSF H

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

IPPM peak pulse current tp = 8/20 µs [1] - 1 A

Tjjunction temperature -45 125 °C

Tamb ambient temperature -45 125 °C

Tstg storage temperature -65 150 °C

ESD maximum ratings

IEC 61000-4-2; contact discharge [2] - 10 kV

IEC 61000-4-2; air discharge [2] - 15 kV

VESD electrostatic discharge voltage

MIL-STD-883; human body model;

HBM

- 10 kV

[1] According to IEC 61000-4-5 and IEC 61643-321.

[2] Device stressed with ten non-repetitive ESD pulses.

NXP Semiconductors PESD24VF1BSF

Ultra low capacitance bidirectional ESD protection diode

Product data sheet 11 December 2015 3 / 12

tp (µs)

0 403010 20

001aaa630

120

IPP

(%)

e-t

100 % IPP; 8 µs

50 % IPP; 20 µs

Fig. 1. 8/20 µs pulse waveform according to

IEC 61000-4-5 and IEC 61643-321

001aaa631

IPP

100 %

90 %

30 ns

60 ns

10 %

tr= 0.6 ns to 1 ns

Fig. 2. ESD pulse waveform according to

IEC 61000-4-2

9. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff

voltage

- - 24 V

IRM reverse leakage

current

VR = 24 V - 1 30 nA

Cddiode capacitance f = 1 MHz; VR = 0 V - 0.25 0.4 pF

VBR breakdown voltage IR = 1 mA 24.5 28 - V

VCL clamping voltage IPPM = 1 A [1] - - 17 V

Rdyn dynamic resistance IR = 5 A [2] - 0.7 - Ω

[1] According to IEC 61000-4-5 and IEC 61643-321.

[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;

ANSI / ESD STM5.5.1-2008.

NXP Semiconductors PESD24VF1BSF

Ultra low capacitance bidirectional ESD protection diode

Product data sheet 11 December 2015 4 / 12

aaa-013492

VR (V)

-30 3010-10

0.20

0.15

0.25

0.30

(pF)

0.10

f = 1 MHz; VR = 0 V; Tamb = 25 °C

Fig. 3. Diode capacitance as a function of reverse

voltage; typical values

006aab325

-VCL -VBR -VRWM

VCL

VBR

VRWM

-IRM

IRM

-IR

-IPP

IPP

IPPM

-IPPM

Fig. 4. V-I characteristics for a bidirectional ESD

protection diode

VCL (V)

0 403010 20

aaa-013493

(A)

tp = 100 ns; Transmission Line Pulse (TLP)

Fig. 5. Dynamic resistance

NXP Semiconductors PESD24VF1BSF

Ultra low capacitance bidirectional ESD protection diode

Product data sheet 11 December 2015 5 / 12

50 Ω

DUT

(DEVICE

UNDER

TEST)

RG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 ed.2

Cs = 150 pF; Rd = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

40 dB

ATTENUATOR

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

(kV)

-2

t (ns)

-10 7030

4020100 50 60

unclamped -8 kV ESD pulse waveform

(IEC 61000-4-2 network)

-8

-2

-6

(kV)

-10

t (ns)

-10 7030

-4

4020100 50 60

aaa-003952

Fig. 6. ESD clamping test setup and waveforms

t (ns)

-10 705010 30

aaa-013494

100

VCL

(V)

-20

Fig. 7. Clamped +8 kV pulse waveform (IEC 61000-4-2

network)

t (ns)

-10 705010 30

aaa-013495

-60

-20

VCL

(V)

-100

Fig. 8. Clamped -8 kV pulse waveform (IEC 61000-4-2

network)

NXP Semiconductors PESD24VF1BSF

Ultra low capacitance bidirectional ESD protection diode

Product data sheet 11 December 2015 6 / 12

10. Application information

The device is designed for the protection of one bidirectional data line from surge pulses

and ESD damage. The device is suitable on lines where the signal polarities are both

positive and negative with respect to ground.

aaa-002737

ESD protection diode

GND

line to be protected

Fig. 9. Application diagram

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the device as close to the input terminal or connector as possible.

2. Minimize the path length between the device and the protected line.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.

NXP Semiconductors PESD24VF1BSF

Ultra low capacitance bidirectional ESD protection diode

Product data sheet 11 December 2015 7 / 12

11. Package outline

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOD962-2

sod962-2_po

13-07-12

13-07-17

Unit

max

nom

min

0.32

0.28

0.03 0.325

0.275

0.625

0.575

0.4

0.15

0.13

Dimensions (mm are the original dimensions)

Note

1. The marking bar indicates the cathode.

Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2

A1b

0.25

0.23

D E e1L

0 0.5 mm

scale

(1)

1 2

Fig. 10. Package outline DSN0603-2 (SOD962-2)

NXP Semiconductors PESD24VF1BSF

Ultra low capacitance bidirectional ESD protection diode

Product data sheet 11 December 2015 8 / 12

12. Soldering

Footprint information for reflow soldering of leadless ultra small package; 2 terminals SOD962-2

sod962-2_fr

solder land

solder resist

solder land plus solder paste

solder paste deposit

Dimensions in mm

R0.025 (8×)

0.14

(2×)

0.2

(2×)

0.24

(2×)

0.4

0.85

0.4

Fig. 11. Reflow soldering footprint for DSN0603-2 (SOD962-2)

NXP Semiconductors PESD24VF1BSF

Ultra low capacitance bidirectional ESD protection diode

Product data sheet 11 December 2015 9 / 12

13. Revision history

Table 7. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PESD24VF1BSF v.1 20151211 Product data sheet - -

NXP Semiconductors PESD24VF1BSF

Ultra low capacitance bidirectional ESD protection diode

Product data sheet 11 December 2015 10 / 12

14. Legal information

14.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

14.2 Definitions

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Short data sheet — A short data sheet is an extract from a full data sheet

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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Characteristics sections of this document is not warranted. Constant or

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NXP Semiconductors PESD24VF1BSF

Ultra low capacitance bidirectional ESD protection diode

Product data sheet 11 December 2015 11 / 12

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HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

NXP Semiconductors PESD24VF1BSF

Ultra low capacitance bidirectional ESD protection diode

Product data sheet 11 December 2015 12 / 12

15. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 1

6 Ordering information ............................................. 2

7 Marking ................................................................... 2

8 Limiting values .......................................................2

9 Characteristics .......................................................3

10 Application information .........................................6

11 Package outline ..................................................... 7

12 Soldering ................................................................ 8

13 Revision history ..................................................... 9

14 Legal information .................................................10

14.1 Data sheet status ............................................... 10

14.2 Definitions ...........................................................10

14.3 Disclaimers .........................................................10

14.4 Trademarks ........................................................ 11

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 11 December 2015