TSL2550
AMBIENT LIGHT SENSOR
WITH SMBus INTERFACE
TAOS029L − OCTOBER 2007
3
The LUMENOLOGY r Company r
r
Copyright E 2007, TAOS Inc.
www.taosinc.com
Electrical Characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IO = 50 μA 0.01
VOL SMBus output low voltage IO = 4 mA 0.4 V
Active, VSMBCLK and VSMDATA = VDD,
VDD = 3.3 V ± 5% 0.35 0.6 mA
IDD Supply current Power down, VSMBCLK and VSMDATA =
VDD, VDD = 3.3 V ± 5% 10 μA
IIH High level input current VI = VDD 5μA
IIL Low level input current VI = 0 −5μA
Operating Characteristics, VDD = 3.3 V, TA = 25C (unless otherwise noted) (see Notes 2, 3, 4)
PARAMETER TEST CONDITIONS CHANNEL MIN TYP MAX UNIT
Ch0 1
Ee = 0 Ch1 1
ADC count value standard mode
λ
= 640 nm Ch0 639 799 959
ADC count value, standard mode
Ee = 72 μW/cm2Ch1 85 counts
λ
= 940 nm Ch0 511 799 1039
Ee = 140 μW/cm2Ch1 703
Ch0 1
Ee = 0 Ch1 1
ADC count value extended mode
λ
= 640 nm Ch0 155
ADC count value, extended mode
Ee = 72 μW/cm2Ch1 16 counts
λ
= 940 nm Ch0 155
Ee = 140 μW/cm2Ch1 139
ADC count value ratio: Ch1/Ch0, λp = 640 nm, Ee = 72 μW/cm20.070 0.106 0.175
ADC count value ratio: Ch1/Ch0
,
standard mode λp = 940 nm, Ee = 140 μW/cm20.70 0.88 1.20
λ
= 640 nm Ch0 11.1
Irradiance responsivity standard mode
Ee = 72 μW/cm2Ch1 1.2 counts/
ReIrradiance responsivity, standard mode
λ
= 940 nm Ch0 5.7 (μW/
m2
Ee = 140 μW/cm2Ch1 5
Fluorescent light source: 300 Lux
Ch0 2.8
Illuminance responsivity standard mode
Fluorescent light source: 300 Lux Ch1 0.23 counts/
RvIlluminance responsivity, standard mode
Incandescent light source: 50 Lux
Ch0 19
lux
Incandescent light source: 50 Lux Ch1 13
(Sensor Lux) / (actual Lux), standard mode Fluorescent light source: 300 Lux 0.65 1 1.35
(Sensor Lux) / (actual Lux)
,
(Note 5) Incandescent light source: 50 Lux 0.5 1 1.5
NOTES: 3. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 640 nm LEDs
and infrared 940 nm LEDs are used for final product testing for compatibility with high volume production.
4. The 640 nm irradiance Ee is supplied by an AlInGaP light-emitting diode with the following characteristics: peak wavelength
λp = 640 nm and spectral halfwidth Δλ½ = 17 nm.
5. The 940 nm irradiance Ee is supplied by a GaAs light-emitting diode with the following characteristics: peak wavelength
λp = 940 nm and spectral halfwidth Δλ½ = 40 nm.
6. The sensor Lux is calculated using the empirical formula shown on p. 11 of this data sheet based on measured Ch0 and Ch1 ADC
count values for the light source specified. Actual Lux is obtained with a commercial luxmeter. The range of the (sensor Lux) / (actual
Lux) ratio is estimated based on the variation of the 640 nm and 940 nm optical parameters. Devices are not 100% tested with
fluorescent or incandescent light sources.
ams AG
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