IGBT Module IC25 = 93 A
VCES = 600 V
VCE(sat)typ. = 2.4 V
Features
•Package with DCB ceramic
base plate
•Isolation voltage 3000 V∼
•Planar glass passivated chips
•Low forward voltage drop
•Leads suitable for PC board
soldering
•UL registered, E 148688
Applications
•AC and DC motor control
•AC servo and robot drives
•power supplies
•welding inverters
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and
power cycling capability
•High power density
•Small and light weight
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 2
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Preliminary Data Sheet
*NTC optional
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
PSIS 100/06* PSSI 100/06*
PSI 100/06*
PSIG 100/06
PSI 100/06*
PSIS 100/06*
PSSI 100/06*
X15
X16
NTC
AC 1
L9
IK 10
F1
X15
X16
NTC
AC 1
L9
IK 10
T16
IGBTs
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 600 V
VGES ± 20 V
IC25 TC = 25°C 93 A
IC80 TC = 80°C 63 A
ICM VGE = ±15 V; RG = 15 Ω; TVJ = 125°C 150 A
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES
tSC VCE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
Ptot TC = 25°C 294 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 100 A; VGE = 15 V; TVJ = 25°C 2.4 2.8 V
TVJ = 125°C 2.8 V
VGE(th) IC = 1.5 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES;V
GE = 0 V; TVJ = 25°C 1.4 mA
TVJ = 125°C 6.5 mA
IGES VCE = 0 V; VGE = ± 20 V 150 nA
td(on) 150 ns
tr60 ns
td(off) 450 ns
tf40 ns
Eon 3.2 mJ
Eoff 2.2 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 4.2 nF
RthJC (per IGBT) 0.43 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 0.85 K/W
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 60 A
VGE = 15/0 V; RG = 15 Ω
PSIG 100/06
LMN AIJK
S
L9
K10
GH 10
E2 X13
X15
NTC
X16
E2
VX 18
OP 9
http://store.iiic.cc/
PSIG PSI PSIS PSSI 100/06
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
PSIS
PSSI
Reverse diodes (FRED)
Symbol Conditions Maximum Ratings
IF25 TC = 25°C 134 A
IF80 TC = 80°C 82 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 60 A; TVJ = 25°C 1.78 1.99 V
TVJ = 125°C 1.33 V
IRM IF = 60 A; diF/dt = 500 A/µs; TVJ = 125°C 28 A
trr VR = 300 V; VGE = 0 V 100 ns
RthJC 0.66 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 1.32 K/W
Module
Symbol Conditions Maximum Ratings
TVJ -40...+150 °C
Tstg -40...+150 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~
MdMounting torque (M4) 1.5 - 2.0 Nm
14 - 18 lb.in.
aMax. allowable acceleration 50 m/s2
Symbol Conditions Characteristic Values
min. typ. max.
dSCreepage distance on surface (Pin to heatsink) 11.2 mm
dAStrike distance in air (Pin to heatsink) 11.2 mm
Weight 24 g
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R25 T = 25°C 4.75 5.0 5.25 kΩ
B25/50 3375 K
PSI
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSIG
http://store.iiic.cc/
