PBSS4230T,215 - NEXPERIA - Product.Network

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DATA SH EET

Product data sheet 2003 Sep 29

DISCRETE SEMICONDUCTORS

PBSS4230T

30 V, 2 A

NPN low VCEsat (BISS) transistor

M3D08

2003 Sep 29 2

NXP Semiconductors Product data sheet

30 V, 2 A

NPN low VCEsat (BISS) transistor PBSS4230T

FEATURES

•Low collector-emitter saturation volt age VCEsat

•High collector current capability IC and ICM

•High efficiency leading to less heat generation

•Reduced printed-circuit bo ard requirements

•Cost effective alternative to MOSFETs in specific

applications.

APPLICATIONS

•Power management

– DC/DC conversion

– Supply line switching

– Battery charger

– LCD backlighting.

•Peripheral driver

– Driver in low su pply voltage applications (e.g. lamps

and LEDs)

– Inductive load drive rs (e.g. relays, buzzers an d

motors).

DESCRIPTION

NPN BISS transistor in a SOT23 plastic package providing

ultra low VCEsat an d RCEsat parame ter s.

PNP complement: PBSS5230T.

MARKING

Note

1. * = p: made in Hong Kong.

* = t: made in Malaysia.

* = W: made in China.

QUICK REFERENCE DATA

PINNING

TYPE NUMBER MARKING CODE(1)

PBSS4230T *3D

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage 30 V

ICcollector current (DC) 2 A

ICM peak collector current 3 A

RCEsat equivalent on-resistance 200 mΩ

PIN DESCRIPTION

1base

2emitter

3collector

handbook, halfpage

MAM255

Top view

Fig.1 Simplified outline (SOT23 ) and symbo l .

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PBSS4230T −plastic surface mounted package; 3 leads SOT23

2003 Sep 29 3

NXP Semiconductors Pr oduct data shee t

30 V, 2 A

NPN low VCEsat (BISS) transistor PBSS4230T

LIMITING VALUES

In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).

Notes

1. Device mounted o n a FR4 printed-circuit board, single-sided copper, ti np la ted, standard footpr int.

2. Device mounted on a FR4 printed-circuit board, single-sided coppe r, tin plate d, mounting pad for collector 1 cm2.

THERMAL CHARACTE RISTICS

Notes

1. Device mounted o n a FR4 printed-circuit board, single-sided copper, ti np la ted, standard footpr int.

2. Device mounted on a FR4 printed-circuit board, single-sided coppe r, tin plate d, mounting pad for collector 1 cm2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter −40 V

VCEO collector-emitter voltage open base −30 V

VEBO emitter-base voltage open collector −5 V

ICcollector current (DC) −2 A

ICM peak collector current −3 A

IBM peak base current −300 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −300 mW

Tamb ≤ 25 °C; note 2 −480 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air; note 1 417 K/W

in free air; note 2 260 K/W

2003 Sep 29 4

NXP Semiconductors Pr oduct data shee t

30 V, 2 A

NPN low VCEsat (BISS) transistor PBSS4230T

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = 30 V; IE = 0 −−100 nA

VCB = 30 V; IE = 0; Tj = 150 °C−−50 μA

IEBO emitter-base cu t-off current VEB = 4 V; IC = 0 −−100 nA

hFE DC current gain VCE = 2 V; IC = 100 mA 350 470 −

VCE = 2 V; IC = 500 mA 300 450 −

VCE = 2 V; IC = 1 A 300 420 −

VCE = 2 V; IC = 2 A 150 250 −

VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA −45 70 mV

IC = 500 mA; IB = 50 mA −70 100 mV

IC = 750 mA; IB = 15 mA −120 180 mV

IC = 1 A; IB = 50 mA; note 1 −130 180 mV

IC = 2 A; IB = 200 mA; note 1 −240 320 mV

RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 −140 200 mΩ

VBEsat base-emitt er saturation voltage IC = 2 A; IB = 200 mA; note 1 −−1.1 V

VBEon base-emitter turn-on voltage VCE = 2 V; IC = 100 mA −−0.75 V

fTtransition frequen c y IC = 100 mA; VCE = 10 V;

f = 100 MHz 100 230 −MHz

Cccollector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz −15 20 pF

2003 Sep 29 5

NXP Semiconductors Pr oduct data shee t

30 V, 2 A

NPN low VCEsat (BISS) transistor PBSS4230T

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT2

2003 Sep 29 6

NXP Semiconductors Pr oduct data shee t

30 V, 2 A

NPN low VCEsat (BISS) transistor PBSS4230T

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document co ntains data from the objective s pecification for produc t

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

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does not give any representations or warranties,

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of such information and shall have no liability for the

consequenc es of use of such information.

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reserves the right to make changes to information

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Printed in The Netherlands R75/01/pp7 Date of release: 2003 Sep 29 Document orde r number: 9397 750 11898