Sep.2000
1
PNUVW
23 456 789 10
11
12
13
14
15
2.0 ± 0.1
(t = 0.5)
TERMINAL CODE
INTERFACE WHICH IS
THE SAME AS
THE U-PHASE
1. VUPC
2. UP
3. VUP1
4. VVPC
5. VP
6. VVP1
7. VWPC
8. WP
9. VWP1
10. VNC
11. VN1
12. UN
13. VN
14. WN
15. FO
16. P
17. N
18. U
19. V
20. W
0.6 ± 0.1
(t = 0.4)
OUT
M
Si
+
-
GND
VUP1 P
U
V
W
N
UP
VD1 IF
IF
IF
VUPC
Vcc
IN
GND
OUT
Si
GND
VVP1
VP
VD2 VVPC
Vcc
IN
GND
OUT
Si
GND
VWP1
WP
VD3 VWPC
Vcc
IN
GND
OUT
Si
GND
UN Vcc
Fo
IN
GND
TEMP
OUT
Si
GND
VN
VD4
Vcc
Fo
Th
IN
GND
OUT
Si
GND
VN1
WN
VNC
Fo
NC
NC
RFo
Vcc
Fo
IN
GND
YQXQQ XN
AF
AG
2-R
XD
B
L
C
A
J
MMM AA
ME
G
U
1
F
AA
AA
AC
2-S AB
AB
TZ
AD AD
AE
PK
Description:
Mitsubishi Intelligent Power Mod-
ules are isolated base modules de-
signed for power switching applica-
tions operatingat frequencies to
20kHz. Built-in control circuits pro-
vide optimum gate drive and pro-
tection for the IGBT and free
wheel-diode power devices.
Features:
uComplete Output Power
Circuit
uGate Drive Circuit
uProtection Logic
– Short Circuit
– Over-Current
– Over Temperature
– Under Voltage
Applications:
uInverters
uUPS
uMotion/Servo Control
uPower Supplies
Ordering Information:
Example: Select the Complete
part number from the table below
-i.e. PM10CZF120 is a 1200V,
10 Ampere Intelligent Power Mod-
ule.
Type Current Rating VCES
Amperes Volts (x 10)
PM 10 120
Dimensions Inches Millimeters
R 0.22 Dia. 5.5 Dia.
S 0.24 Rad. 6.0 Rad.
T 0.14 3.5
U 0.12±0.02 3.0±0.5
X 0.1±0.01 2.54±0.3
Y 0.1±0.01 2.54±0.3
Z 0.24 6.0
AA 0.12 3.0
AB 0.69 17.5
AC 0.16 4.0
AD 0.10 2.5
AE 2.76 70.0
AF 0.22 5.5
AG 0.22 5.5
Dimensions Inches Millimeters
A 3.86±0.04 98.0±1.0
B 3.43±0.02 87.0±0.5
C 2.99 76.0
D 2.30 58.42
E 2.20±0.03 56.0±0.8
F 2.21±0.04 56.0±1.0
G 1.73±0.03 44.0±0.8
J 0.83 21.0
K 0.71±0.04 18.0±1.0
L 0.61 15.5
M 0.55±0.01 14.0±0.3
N 0.56 14.29
P 0.32±0.02 8.0±0.5
Q 0.40 10.16
Outline Drawing and Circuit Diagram
MITSUBISHI INTELLIGENT POWER MODULES
PM10CZF120
FLAT-BASE TYPE
INSULATED PACKAGE
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM10CZF120
FLAT-BASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Symbol Ratings Units
Junction Temper ature Tj–20 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Case Operating Temperature TC-20 to 100 °C
Mounting Torque M5 Mounting Screws – 1.47 ~ 1.96 N · m
Module Weight (Typical) – 80 Grams
Supply Voltage Protected by OC and SC (VD = 13.5 ~ 16.5V, Inverter Part) VCC(prot) 800 Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
Control Sector
Supply Voltage (Applied between VUP1-VUPC, V VP1-VVPC, VWP1-VWPC, VN1-VNC)V
D20 Volts
Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN-VNC)V
CIN 20 Volts
Fault Output Supply Voltage (Applied between FO and VNC)V
FO 20 Volts
Fault Output Current (Sink Current of FO Terminal) IFO 20 mA
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 1200 Volts
Collector Current, (TC = 25°C) IC10 Amperes
Peak Collecotr Current, (TC = 25°C) ICP 20 Amperes
Supply Voltage (Applied between P-N) VCC 900 Volts
Supply Voltage, Surge (Applied between P-N,) VCC (surge) 1000 Volts
Collector Dissipation PC62 Watts
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM10CZF120
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Control Sector
Over Current Tr ip Level OC -20 °C ≤ Tj ≤ 125 °C, VD = 15V 15 27 – Amperes
Short Circuit Trip Level SC -20 °C ≤ Tj ≤ 125 °C, VD = 15V – 41 – Amperes
Over Current Delay Time toff(OC) VD = 15V – 10 – µs
Over Temperature Protection OT Trip Level 100 11 0 120 °C
OTrReset Level – 90 – °C
Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts
UVrReset Level – 12.5 – Volts
Supply V oltage VDApplied between VUP1-VUPC, 13.5 15.0 16.5 Volts
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Circuit Current IDVD = 15V, V CIN = 15V, VN1-VNC –1825mA
VD = 15V, V CIN = 15V, VXP1-VXPC – 7 10 mA
Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage Vth(off) UP-VUPC, VP-VVPC, WP-VWPC, 1.7 2.0 2.3 Volts
UN · VN · WN-VNC
PWM Input Frequency fPWM 3-φ Sinusoidal – – 15 kHz
Fault Output Current IFO(H) VD = 15V, VFO = 15V – – 0.01 mA
IFO(L) VD = 15V, VFO = 15V – 10 15 mA
Minimum Fault Output Pulse Width tFO VD = 15V 1.0 1.8 – ms
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM10CZF120
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
IGBT Inverter Sector
Collector-Emitter Cutoff Current ICES VCE = VCES, VD = 15V, Tj = 25°C––1mA
VCE = VCES, VD = 15V, Tj = 125°C– – 10 mA
FwDi Forward Voltage VEC -IC = 10A, VD = 15V, VCIN = 15V – 2.5 3.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 10A, Tj = 25°C – 2.7 3.7 Volts
VD = 15V, VCIN = 0V, IC = 10A, – 2.5 3.4 Volts
Tj = 125°C
Inductive Load Switching Times ton 0.3 0.6 1.3 µs
trr VD = 15V, V CIN = 0 ↔ 15V, – 0.15 – µs
tC(on) VCC = 600V, IC = 10A, – 0.3 1.0 µs
toff Tj = 125°C, Inductive Load – 1.8 3.3 µs
tC(off) – 0.8 1.5 µs
Thermal Characteristics
Characteristic Symbol Condition Min. Ty p. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q Each IGBT – – 2.0 °C/Watt
Rth(j-c)F Each FWDi – – 5.5 °C/Watt
Contact Thermal Resistance Rth(c-f) Case to Fin Per Module, – – 0.067 °C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Supply Voltage V CC Applied across P-N Terminals 0 ~ 800 Volts
VDApplied between VUP1-VUPC, 15 ± 1.5 Volts
VN1-VNC, VVP1-VVPC, VWP1-VWPC
Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts
Input OFF Voltage VCIN(off) UP, V P, WP, UN, VN, WN4.0 ~ VDVolts
PWM Input Frequency fPWM Using Application Circuit 5 ~ 15 kHz
Minimum Dead Time tdead Input Signal ≥3.0 µs
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM10CZF120
FLAT-BASE TYPE
INSULATED PACKAGE
1
2
3
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
SATURATION VOLTAGE VCE(sat), (VOLTS)
02 10468
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
00
1
2
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
12 14 16 18 20
3
0
IC = 10A
VCIN = 0V
Tj = 25oC
Tj = 125oC
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
0123
5
10 Tj = 25oCVD = 17V
15
13
10-1 101102
10-1
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIMES, t(on), t(off), (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
100
101
100
toff
ton
VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
100101102
10-1
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIMES, tc(on), tc(off), (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
tc(on)
100
101
tc(off)
VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
100101102
10-2
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
10-1
100VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
REVERSE RECOVERY TIME, trr, (µs)
100
101
102
trr
Irr
04
100
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
101
102
12
Tj = 25oC
Tj = 125oC
VD = 15V
3
0
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM10CZF120
FLAT-BASE TYPE
INSULATED PACKAGE
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)D = 5.5oC/W
10-2
10-3
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 2.0oC/W
10-2
10-3
