1MBH10D-120 Molded IGBT
1200V / 10A Molded Package
Features
・
Small molded package
・
Low power loss
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Soft switching with low switching surge and noise
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High reliability, high ruggedness (RBSOA, SCSOA etc.)
・
Comprehensive line-up
Applications
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Inverter for Motor drive
・
AC and DC Servo drive amplifier
・
Uninterruptible power supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (Tc=25°C)
Items Symbols Ratings Units
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES ±20 V
Collector Current DC TC=25℃Ic25 18 A
TC=105℃Ic110 10 A
1ms TC=25℃Icp 48 A
IGBT Max. Power Dissipation Pc 155 W
FWD Max. Power Dissipation Pc 105 W
Operating Temperature Tj +150 ℃
Storage Temperature Tstg -40 to +150 ℃
Mounting Screw Torque －70 N・cm
Electrical Characteristics (at Tc=25°C unless otherwise specified)
Items Symbols Characteristics Conditions Units
min. typ. max.
Zero gate voltage Collector Current
ICES － － 1.0 VGE = 0V, VCE = 1200V mA
Gate-Emitter leakage Current IGES － － 20 VCE = 0V, VGE = ±20V μA
Gate-Emitter Threshold Voltage VGE(th) 5.5 －8.5 VCE = 20V, Ic = 10mA V
Collector-Emitter Saturation Voltage
VCE(sat) － － 3.5 VGE = 15V, Ic = 10A V
Input capacitance Cies －1200 －VGE = 0V
VCE = 10V
f = 1MHz
pFOutput capacitance Coes －250 －
Reverse transfer capacitance Cres －80 －
Switching Time
Turn-on time ton － － 1.2 Vcc = 600V
Ic = 10A
VGE = ±15V
RG = 160Ω
(Half Bridge) μs
tr － － 0.6
Turn-off time toff － － 1.5
tf － － 0.5
Turn-on time ton －0.16 －Vcc = 600V
Ic = 10A
VGE = +15V
RG = 16Ω
(Half Bridge)
tr －0.11 －
Turn-off time toff －0.30 －
tf － － 0.50
FWD forward voltage drop VF － － 3.0 IF = 10A V
Reverse recovery time trr － － 0.35
IF = 10A, VGE = -10V
VR = 200V
di/dt = 100A/μs
μs
Thermal resistance Characteristics
Items Symbols Characteristics Conditions Units
min. typ. max.
Thermal resistance Rth(j-c) － － 0.80 IGBT ℃/W
Rth(j-c) － － 1.19 FWD
Outline drawings, mm
Equivalent circuit
1
1MBH10D-120 Molded IGBT
Characteristics
2
Collector current vs. Collector-Emitter voltage
Tj = 25℃
Collector-Emitter voltage vs. Gate-Emitter Voltage
Tj = 25℃
Switching time vs. Collector current
Vcc=600V, RG=16Ω, VGE=±15V, Tj=25℃
Switching time vs. Collector current
Vcc=600V, RG=16Ω, VGE=±15V, Tj=125℃
Collector-Emitter voltage vs. Gate-Emitter Voltage
Tj = 125℃
Collector current vs. Collector-Emitter voltage
Tj = 125℃
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
Gate-Emitter voltage : VGE [V]
Collector-Emitter voltage : VCE [V]Switching time : ton, tr, toff, tf [nsec]
Switching time : ton, tr, toff, tf [nsec] Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Gate-Emitter voltage : VGE [V]
Collector current : Ic [A]
Collector Current : Ic [A]
Collector Current : Ic [A]
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1MBH10D-120 Molded IGBT
Characteristics
3
Switching time vs. RG
Vcc=600V, IC=10A, VGE=±15V, Tj=25℃
Reverse Biased Safe Operating Area
+VGE=15V, -VGE≦15V, Tj=125℃, RG≧16Ω
Typical short circuit capability
Vcc=800V, RG=16Ω, Tj=125℃
Gate resistance : RG [Ω]
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [nQ]
Switching time : ton, tr, toff, tf [nsec]
Switching time : ton, tr, toff, tf [nsec]
Gate resistance : RG [Ω]
Collector-Emitter voltage : VCE [V]
Gate voltage : VGE [V]
Switching time vs. RG
Vcc=600V, IC=10A, VGE=±15V, Tj=125℃
Dynamic input characteristics
Tj=25℃
Capacitance vs. Collector-Emitter voltage
Tj=25℃
Collector-Emitter voltage : VCE [V]
Capacitance : Coes, Cres, Cies [pF]
Gate-Emitter voltage : VGE [V]
Collector current : Ic [A]
Short circuit current : Isc [A]
Short circuit time : tsc [μs]
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1MBH10D-120 Molded IGBT
Characteristics
4
Reverse recovery time vs. Forward current
VR=200V, -di/dt=100A/μsec
Forward voltage vs. Forward current
Transient thermal resistance
Reverse recovery current vs. Forward current
VR=200V, -di/dt=100A/μsec
Forward current : IF [A]
Pulse width : Pw [sec]
Forward Voltage : VF [V]
Forward current : IF [A]
-di/dt [A/μsec]
Reverse recovery time : trr [nsec]Forward Current : IF [A]Thermal resistance : Rth(j-c) [℃/W]
Reverse recovery current : Irr [A]
Reverse recovery chracteristics vs. -di/dt
IF=10A, Tj=125℃
Reverse recovery time : trr [nsec]
Reverse recovery current : Irr [A]
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1MBH10D-120 Molded IGBT
5
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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