2SC5066-O,LF(T - TOSHIBA - Product.Network

2SC5066

2014-03-01

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC5066

VHF~UHF Band Low Noise Amplifier Applications

• Low noise figure, high gain.

• NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 20 V

Collector-emitter voltage VCEO 12 V

Emitter-base voltage VEBO 3 V

Base current IB 15 mA

Collector current IC 30 mA

Collector power dissipation PC 100 mW

Junction temperature Tj 125 °C

Storage temperature range Tstg −55 to 125 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Microwave Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Transition frequency fT VCE = 5 V, IC = 10 mA 5 7 ⎯ GHz

⎪S21e⎪2 (1)

VCE = 5 V, IC = 10 mA, f = 500 MHz ⎯ 17 ⎯

Insertion gain ⎪S21e⎪2 (2)

VCE = 5 V, IC = 10 mA, f = 1 GHz 8.5 12 ⎯

NF (1) VCE = 5 V, IC = 3 mA, f = 500 MHz ⎯ 1 ⎯

Noise figure

NF (2) VCE = 5 V, IC = 3 mA, f = 1 GHz ⎯ 1.1 2.0

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = 10 V, IE = 0 ⎯ ⎯ 1 μA

Emitter cut-off current IEBO V

EB = 1 V, IC = 0 ⎯ ⎯ 1 μA

DC current gain hFE

(Note 1) VCE = 5 V, IC = 10 mA 80 ⎯ 240

Output capacitance Cob ⎯ 0.7 ⎯ pF

Reverse transfer capacitance Cre

VCB = 5 V, IE = 0, f = 1 MHz (Note 2) ⎯ 0.45 0.9 pF

Note 1: hFE classification O: 80 to 160, Y: 120 to 240

Note 2: Cre is measured by 3 terminal method with capacitance bridge.

Unit: mm

JEDEC ―

JEITA SC-70

TOSHIBA 2-2H1A

Weight: 2.4 mg (typ.)

Start of commercial production

1993-07

2SC5066

2014-03-01

Marking

2SC5066

2014-03-01

2SC5066

2014-03-01

S-Parameter ZO = 50 Ω, Ta = 25°C

VCE = 5 V, IC = 5 mA

Frequency S11 S21 S12 S22

(MHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.

200 0.753 −43.7 10.247 140.6 0.040 65.6 0.827 −22.6

400 0.531 −75.1 7.684 117.1 0.060 57.1 0.648 −30.3

600 0.384 −96.4 5.815 103.0 0.074 56.1 0.551 −32.0

800 0.305 −112.6 4.523 93.6 0.086 57.0 0.500 −32.3

1000 0.255 −126.5 3.788 86.3 0.099 58.9 0.472 −32.4

1200 0.224 −138.4 3.244 80.7 0.112 60.2 0.455 −32.2

1400 0.203 −150.1 2.833 75.4 0.127 60.3 0.442 −32.6

1600 0.187 −159.4 2.529 70.6 0.139 60.0 0.434 −33.0

1800 0.174 −166.5 2.283 66.7 0.150 60.3 0.429 −32.6

2000 0.176 −171.2 2.107 63.0 0.164 59.2 0.428 −32.2

VCE = 5 V, IC = 10 mA

Frequency S11 S21 S12 S22

(MHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.

200 0.591 −58.0 14.955 129.6 0.034 64.3 0.714 −27.5

400 0.367 −90.3 9.581 107.5 0.052 61.9 0.534 −30.8

600 0.260 −110.7 6.781 96.1 0.067 63.9 0.462 −30.1

800 0.209 −126.9 5.207 88.6 0.083 65.2 0.428 −29.2

1000 0.178 −141.8 4.269 82.5 0.100 66.4 0.412 −28.6

1200 0.160 −153.7 3.618 77.7 0.117 66.7 0.403 −28.3

1400 0.150 −166.3 3.152 72.7 0.135 65.4 0.398 −28.8

1600 0.141 −175.2 2.801 68.7 0.149 64.0 0.393 −29.4

1800 0.130 178.2 2.521 65.0 0.163 63.4 0.392 −29.0

2000 0.133 174.0 2.314 61.7 0.179 61.3 0.395 −28.6

2SC5066

2014-03-01

2SC5066

2014-03-01

2SC5066

2014-03-01

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