n Outline Drawing IGBT MODULE ( N series ) n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Improved FWD Characteristic * Minimized Internal Stray Inductance * Overcurrent Limiting Function (4~5 Times Rated Current) n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 1200 20 200 400 200 400 1500 +150 -40 +125 2500 3.5 4.5 Units V V A W C C V Nm Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 4.5 Nm (M6) * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=200mA VGE=15V IC=200A VGE=0V VCE=10V f=1MHz VCC=600V IC=200A VGE= 15V RG=4.7 IF=200A VGE=0V IF=200A Min. Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. 4.5 32000 11600 10320 0.65 0.25 0.85 0.35 Max. 2.0 30 7.5 3.3 Units mA A V V pF 1.2 0.6 1.5 0.5 3.0 350 s V ns * Thermal Characteristics Items Thermal Resistance http://store.iiic.cc/ Typ. 0.025 Max. 0.085 0.22 Units C/W Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j=125C T j=25C 500 500 V GE =20V,15V,12V,10V [A] C C Collector current : I Collector current : I 300 200 8V 100 300 200 8V 100 0 0 0 1 2 3 4 5 0 3 4 5 Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage T j=25C T j=125C CE [V] 10 [V] 8 6 4 IC= 2 400A 200A 100A 8 Collector-Emitter voltage : V CE 2 Collector-Emitter voltage : V CE [V] 6 IC= 4 400A 200A 2 0 100A 0 0 5 10 15 20 25 0 Gate-Emitter voltage : V GE [V] 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current Switching time vs. Collector current V CC =600V, R G =4.7 , V GE =15V, T j=25C V CC =600V, R G =4.7 , V GE =15V, Tj=125C 1000 t off t on tf tr 1000 , t r , t off , t f [nsec] , t r , t off , t f [nsec] t off t on tf tr 100 Switching time : t on 100 Switching time : t on 1 Collector-Emitter voltage : V CE [V] 10 Collector-Emitter voltage : V V GE =20V,15V,12V,10V, 400 [A] 400 10 0 100 200 300 400 Collector current : I C [A] 10 0 100 200 300 Collector current : I C [A] http://store.iiic.cc/ 400 Switching time vs. R G Dynamic input characteristics V CC =600V, I C =200A, V GE =15V, T j=25C T j=25C [V] 600V 1000 tr tf 100 20 800 CE t on 800V Collector-Emitter voltage : V Switching time : t 25 V CC =400V t off on , t r , t off , t f [nsec] 1000 600 15 400 10 200 5 0 2500 0 10 0 500 1000 1500 2000 Gate resistance : R G [ ] Gate charge : Q G [nC] Forward current vs. Forward voltage Reverse recovery characteristics V GE = O V t rr , I rr vs. I F [A] rr [A] Reverse recovery current : I F Forward current : I 300 200 100 rr [nsec] 25C t rr 125C :t T j=125C 400 I rr 125C Reverse recovery time 500 t rr 25C I rr 25C 100 0 0 1 2 3 4 5 0 100 200 300 400 Forward voltage : V F [V] Forward current : I F [A] Transient thermal resistance +V GE =15V, -V GE <15V, T j<125C, R G >4.7 Reversed biased safe operating area 2000 1600 [A] IGBT 0,1 C Collector current : I Thermal resistance : R th(j-c) [C/W] Diode 0,01 SCSOA 1200 (non-repetitive pulse) 800 400 RBSOA (Repetitive pulse) 0,001 0,001 0 0,01 0,1 1 0 200 400 600 800 1000 Collector-Emitter voltage : V CE [V] Pulse width : PW [sec] http://store.iiic.cc/ 1200 Switching loss vs. Collector current Capacitance vs. Collector-Emitter voltage V CC=600V, R G =4.7 , V GE =15V T j=25C E off 125C 50 40 100 C ies ies E on 25C , C oes , C res [nF] E on 125C 30 E off 25C 20 E rr 125C 10 E rr 25C Capacitance : C Switching loss : E on ,E off ,E rr [mJ/cycle] 60 0 10 C oes C res 1 0 100 200 300 400 0 Collector Current : I C [A] 5 10 15 20 25 30 Collector-Emitter Voltage : V CE [V] Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Strae 26 Commonwealth House 2 Chalkhill Road Hammersmith D-60528 Frankfurt/M London W6 8DW, UK Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com http://store.iiic.cc/ 35