CR04AM-12 Thyristor Low Power Use REJ03G0354-0200 Rev.2.00 Mar.01.2005 Features * IT (AV) : 0.4 A * VDRM : 600 V * IGT : 100 A * Glass Passivation Type Outline PRSS0003EA-A (Package name: TO-92) 2 1. Cathode 2. Anode 3. Gate 3 1 3 2 1 Applications Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Rev.2.00, Mar.01.2005, page 1 of 7 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V CR04AM-12 Parameter RMS on-state current Average on-state current Symbol IT (RMS) IT (AV) Ratings 0.63 0.4 Unit A A ITSM 10 A I2 t 0.4 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- 0.5 0.1 6 6 0.3 - 40 to +125 - 40 to +125 0.23 W W V V A C C g Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine half wave 180 conduction, Ta = 54C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 1 k. Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current Symbol IRRM IDRM Min. -- -- Typ. -- -- Max. 0.5 0.5 Unit mA mA On-state voltage VTM -- -- 1.2 V Ta = 25C, ITM = 1.2 A, instantaneous value Gate trigger voltage VGT -- -- 0.8 V Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Gate non-trigger voltage VGD 0.2 -- -- V Tj = 125C, VD = 1/2 VDRM, RGK = 1 k Gate trigger current IGT 1 -- 100Note2 A Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Holding current IH -- 1.5 3 mA Rth (j-a) -- -- 150 C/W Tj = 25C, VD = 12 V, RGK = 1 k Junction to ambient Thermal resistance Test conditions Tj = 125C, VRRM applied Tj = 125C, VDRM applied, RGK = 1 k Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible. Item A B C D E IGT (A) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 1 k resistance between the gate and cathode. 3. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1k Switch 2 60 TUT V1 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1k) Rev.2.00, Mar.01.2005, page 2 of 7 CR04AM-12 Performance Curves 102 7 5 3 2 10 Surge On-State Current (A) Ta = 25C 101 7 5 3 2 100 7 5 3 2 1 2 3 4 5 Gate Voltage (V) PGM = 0.5W 7 5 V GT = 0.8V 3 (Tj = 25C) 2 100 7 5 3 2 PG(AV) = 0.1W IGT = 100A (Tj = 25C) IFGM = 0.3V VGD = 0.2V 10-2 10-2 2 3 5710-12 3 57100 2 3 57101 2 3 57102 2 3 3 2 1 2 3 4 5 7 101 2 3 4 5 7 102 103 7 Typical Example 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 0.9 Gate Trigger Voltage (V) 4 Gate Current (mA) 1.0 Distribution 0.8 Typical Example 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -40 -20 0 20 40 60 80 100 120 Junction Temperature (C) Rev.2.00, 5 Gate Trigger Current vs. Junction Temperature VFGM = 6V 7 5 3 2 6 Gate Characteristics 101 10-1 7 Conduction Time (Cycles at 60Hz) 102 7 5 3 2 8 On-State Voltage (V) x 100 (%) 0 9 0 100 Gate Trigger Current (Tj = tC) Gate Trigger Current (Tj = 25C) 10-1 Rated Surge On-State Current Mar.01.2005, page 3 of 7 Transient Thermal Impedance (C/W) On-State Current (A) Maximum On-State Characteristics 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 Time (s) CR04AM-12 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 0.7 0.6 0.5 0.4 0.3 0.2 360 0.1 0 Resistive, inductive loads 0 120 Resistive, inductive loads Natural convection 100 80 60 = 30 40 90 180 60 120 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 = 30 90 60 120 180 0.7 0.6 0.5 0.4 0.3 0.2 360 0.1 Resistive loads 0 140 120 360 Resistive loads Natural convection 100 80 60 40 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 = 30 60 90 120 0 180 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 160 90 180 = 30 60 120 270 DC 0.7 0.6 0.5 0.4 0.3 0.2 360 0.1 0 Resistive, inductive loads 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Mar.01.2005, page 4 of 7 Ambient Temperature (C) 0.8 Average Power Dissipation (W) 360 Average On-State Current (A) 0 Rev.2.00, 140 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.8 Average Power Dissipation (W) Ambient Temperature (C) 160 60 120 = 30 90 180 Ambient Temperature (C) Average Power Dissipation (W) 0.8 140 120 360 Resistive, inductive loads Natural convection 100 80 60 40 20 0 = 30 0 60 120 270 90 180 DC 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Typical Example 140 120 100 80 60 40 20 RGK = 1k 0 -40 -20 0 20 40 60 80 100 120 140 160 160 Breakover Voltage vs. Gate to Cathode Resistance 120 Typical Example 100 80 60 40 20 Tj = 125C 0 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Junction Temperature (C) Gate to Cathode Resistance (k) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature Typical Example Holding Current (mA) 140 Tj = 125C RGK = 1k 120 100 80 60 40 20 101 7 5 3 2 Distribution Typical Example IGT(25C) = 35A 100 7 5 3 2 10-1 7 5 3 2 RGK = 1k 10-2 -60 -40 -20 0 20 40 60 80 100 120 140 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Rate of Rise of Off-State Voltage (V/s) Junction Temperature (C) Holding Current vs. Gate to Cathode Resistance Holding Current vs. Gate Trigger Current 500 Typical Example IGT(25C) IH(1k) 0.9mA # 1 25A 400 300 200 #1 100 4.0 Tj = 25C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Tj = 25C 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Gate to Cathode Resistance (k) Rev.2.00, Breakover Voltage (RGK = rk) Breakover Voltage (RGK = 1k) 160 Holding Current (mA) Holding Current (RGK = rk) Holding Current (RGK = 1k) x 100 (%) Breakover Voltage (dv/dt = vV/s) Breakover Voltage (dv/dt = 1V/s) x 100 (%) Breakover Voltage (Tj = tC) Breakover Voltage (Tj = 25C) x 100 (%) Breakover Voltage vs. Junction Temperature x 100 (%) CR04AM-12 Mar.01.2005, page 5 of 7 0 100 2 3 5 7 101 2 3 5 7 102 Gate Trigger Current (A) CR04AM-12 Turn-Off Time vs. Junction Temperature 102 7 Typical Example 5 3 2 VD = 100V RL = 47 RGK = 1k Ta = 25C 101 7 5 3 2 100 7 5 3 2 40 VD = 50V, VR = 50V 35 IT = 2A, RGK = 1k Turn-Off Time (s) Turn-On Time (s) Turn-On Time vs. Gate Current Distribution 20 15 10 0 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Repetitive Peak Reverse Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width x 100 (%) Gate Current (mA) 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Mar.01.2005, page 6 of 7 Gate Trigger Current (tw) Gate Trigger Current (DC) x 100 (%) Repetitive Peak Reverse Voltage (Tj = tC) Repetitive Peak Reverse Voltage (Tj = 25C) Typical Example 25 5 10-1 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Rev.2.00, 30 104 7 5 3 2 103 7 5 3 2 Typical Example IGT(DC) # 1 10A # 2 65A #1 #2 102 7 5 3 2 Tj = 25C 101 100 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (s) CR04AM-12 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003EA-A Package Name MASS[Typ.] TO-92 Unit: mm 0.23g 5.0Max 11.5Min 5.0Max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle 0.7 Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 500 Type name Lead form Vinyl sack 500 Type name - Lead forming code Form A8 Taping 2000 Type name - TB Note : Please confirm the specification about the shipping in detail. Rev.2.00, Mar.01.2005, page 7 of 7 Standard order code example CR04AM-12 CR04AM-12-A6 CR04AM-12-TB Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0