MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TIM1414-10LA-252
TECHNICAL DATA
PRELIMINARY
FEATURES
n
HIGH POWER
n
BROAD BAND INTERNALLY MATCHED
P1dB=39.5dBm at 13.75GHz to 14.5GHz
n
HIGH GAIN
n
HERMETICALLY SEALED PACKAGE
G1dB=5.5dB at 13.75GHz to 14.5GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX.
Output Power at 1dB
Compression Point P1dB dBm 39.0 39.5
Power Gain at 1dB
Compression Point G1dB dB 4.5 5.5
Drain Current IDS1A4.0 5.0
Gain Flatness ∆GdB ±0.8
Power Added Efficiency ηadd
VDS= 9V
f = 13.75 to 14.5GHz
%23
3rd Order Intermodulation
Distortion IM3dBc -42 -45
Drain Current IDS2
Two Tone Test
Po= 29.0dBm
(Single Carrier Level) A4.0 5.0
Channel Temperature Rise ∆Tch VDS X IDS X Rth(c-c) °C90
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX.
Transconductance gm VDS= 3V
IDS= 4.8AmS 2800
Pinch-off Voltage VGSoff VDS= 3V
IDS= 145mA V-2.0 -3.5 -5.0
Saturated Drain Current IDSS VDS= 3V
VGS= 0V A10.0 11.5
Gate-Source Breakdown
Voltage VGSO IGS= -145
µ
A V -5
Thermal Resistance Rth(c-c) Channel to Case °C/W 2.0 2.5
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product
Jan. 2002
2
TIM1414-10LA-252
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V15
Gate-Source Voltage VGS V-5
Drain Current IDS A11.5
Total Power Dissipation (Tc= 25 °C) PTW60.0
Channel Temperature Tch °C175
Storage Tstg °C-65 ∼ +175
PACKAGE OUTLINE (2-11C1B)
Unit in mm
•
Gate
‚
Source
ƒ
Drain
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260
°
C.
11.0 MAX.
0.2 MAX.
1.7
±
0.3 0.1 -0.05
+0.1
2.6
±
0.3
5.0 MAX.
•
‚
ƒ
‚
0.6
±
0.15
17.0
±
0.3
21.5 MAX.
.
12.9
±
0.2
3.2
±
0.3
2.0 MIN. 2.0 MIN.
4-R3.0