DATA SH EET
Product specification
Supersedes data of 1996 Sep 17 1999 May 25
DISCRETE SEMICONDUCTORS
BAV20; BAV21
General purpose diodes
M3D176
1999 May 25 2
Philips Semiconductors Product specification
General purpose diodes BAV20; BAV21
FEATURES
•Hermetically sealed leaded glass
SOD27 (DO-35) package
•Switching speed: max. 50 ns
•General application
•Continuous reverse voltage:
max. 150 V, 200 V
•Repetitive peak reverse voltage:
max. 200 V, 250 V
•Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
•General purposes in industrial
equipment e.g. oscilloscopes,
digital voltmeters and video output
stages in colour television.
DESCRIPTION
The BAV20 and BAV21 are switching diodes fabricated in planar technology,
and encapsulated in hermetically sealed leaded glass SOD27 (DO-35)
packages.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diodes are type branded.
handbook, halfpage
MAM246
ka
1999 May 25 3
Philips Semiconductors Product specification
General purpose diodes BAV20; BAV21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BAV20 −200 V
BAV21 −250 V
VRcontinuous peak reverse voltage
BAV20 −150 V
BAV21 −200 V
IFcontinuous forward current see Fig.2; note 1 −250 mA
IFRM repetitive peak forward current −625 mA
IFSM non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs−9A
t = 100 µs−3A
t=1s −1A
P
tot total power dissipation Tamb =25°C; note 1 −400 mW
Tstg storage temperature −65 +175 °C
Tjjunction temperature −175 °C
1999 May 25 4
Philips Semiconductors Product specification
General purpose diodes BAV20; BAV21
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage see Fig.3
IF= 100 mA −1.0 V
IF= 200 mA −1.25 V
IRreverse current see Fig.5
VR=V
Rmax −100 nA
VR=V
Rmax; Tj= 150 °C−100 µA
Cddiode capacitance f = 1 MHz; VR= 0; see Fig.6 −5pF
t
rr reverse recovery time when switched from IF= 30 mA to
IR= 30 mA; RL= 100 Ω;
measured at IR= 3 mA; see Fig.8
−50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W
Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W
1999 May 25 5
Philips Semiconductors Product specification
General purpose diodes BAV20; BAV21
GRAPHICAL DATA
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0 100 200
300
200
0
100
MBG449
Tamb (oC)
IF
(mA)
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
012
600
0
200
400
MBG459
VF (V)
IF
(mA)
(1) (2) (3)
(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
handbook, full pagewidth
MBG703
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
1999 May 25 6
Philips Semiconductors Product specification
General purpose diodes BAV20; BAV21
Fig.5 Reverse current as a function of junction
temperature.
handbook, halfpage
0 100 Tj (oC) 200
103
102
10−1
10−2
10
1
IR
(µA)
MGD009
VR=V
Rmax.
Solid line; maximum values.
Dotted line; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
01020
1.6
1.4
1.0
0.8
1.2
MGD005
VR (V)
Cd
(pF)
Fig.7 Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
(1) BAV21.
(2) BAV20.
handbook, halfpage
0 200
300
0
100
200
MGL588
100
(1)
VR
(V)
Tamb (oC)
(2)
1999 May 25 7
Philips Semiconductors Product specification
General purpose diodes BAV20; BAV21
Fig.8 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR= 3 mA.
1999 May 25 8
Philips Semiconductors Product specification
General purpose diodes BAV20; BAV21
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
Note
1. The marking band indicates the cathode.
SOD27 DO-35A24 SC-40 97-06-09
Hermetically sealed glass package; axial leaded; 2 leads SOD27
UNIT b
max.
mm 0.56
D
max. G1
max.
25.44.251.85
L
min.
DIMENSIONS (mm are the original dimensions)
G1
LD L
b
(1)
0 1 2 mm
scale
1999 May 25 9
Philips Semiconductors Product specification
General purpose diodes BAV20; BAV21
NOTES
1999 May 25 10
Philips Semiconductors Product specification
General purpose diodes BAV20; BAV21
NOTES
1999 May 25 11
Philips Semiconductors Product specification
General purpose diodes BAV20; BAV21
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Internet: http://www.semiconductors.philips.com
1999 65
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Printed in The Netherlands 115002/03/pp12 Date of release: 1999 May 25 Document order number: 9397 750 05895
