Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower Gate Charge BVDSS -100V
▼ Simple Drive Requirement RDS(ON) 80mΩ
▼ Fast Switching Characteristic ID-25A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 4.0 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W
Data and specifications subject to change without notice
200812232
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
1
Operating Junction Temperature Range
Storage Temperature Range -55 to 150
Thermal Data
Parameter
Pulsed Drain Current1-80
-55 to 150
31.3Total Power Dissipation
AP30P10GI
Rating
-100
±20
-25
RoHS-compliant Product
-15
G
D
S
GDSTO-220CFM(I)
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-
industrial through hole applications.
AP30P10GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-1mA -100 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-12A - - 80 mΩ
VGS=-4.5V, ID=-8A - - 100 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-12A - 23 - S
IDSS Drain-Source Leakage Current VDS=-80V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS= ±20V - - ±100 nA
QgTotal Gate Charge2ID=-18A - 50 80 nC
Qgs Gate-Source Charge VDS=-80V - 7.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-10V - 16.5 - nC
td(on) Turn-on Delay Time2VDS=-50V - 12 - ns
trRise Time ID=-18A - 33 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 61 - ns
tfFall Time RD=2.8Ω-78-ns
Ciss Input Capacitance VGS=0V - 2580 4130 pF
Coss Output Capacitance VDS=-25V - 185 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 140 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-18A, VGS=0V - - -1.3 V
trr Reverse Recovery Time2IS=-18A, VGS=0V, - 53 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 125 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP30P10GI
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
60
64
68
72
76
80
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=-8A
TC=25
℃
0
20
40
60
80
048121620
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25oC -10V
- 7 .0V
- 6 .0V
- 5.0 V
VG=-4.0V
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID= -12A
VG= -10V
0
5
10
15
20
25
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCTj=150 oC
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
0
10
20
30
40
50
60
048121620
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=150 oC -10V
-7.0V
-6.0V
-5.0V
VG= -4.0V
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP30P10GI
Q
VG
-10V
QGS QGD
QG
Charge
0
3
6
9
12
15
0 102030405060
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
VDS = -80V
ID= -18A
10
100
1000
10000
1 5 9 13 17 21 25 29
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
1
10
100
0.1 1 10 100 1000
-VDS , Drain-to-Source Voltage (V)
-ID (A)
Tc=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
td(on) trtd(off) tf
VDS
VGS
10%
90%
Package Outline : TO-220CFM
Millimeters
MIN NOM MAX
A4.30 4.70 4.90
A1 2.30 2.65 3.00
b0.50 0.70 0.90
b1 0.95 1.20 1.50
c0.45 0.65 0.80
c2 2.30 2.60 2.90
E9.70 10.00 10.40
L12.00 --- 15.00
L3 2.91 3.41 3.91
L4 14.70 15.40 16.10
φ---- 3.20 ----
e---- 2.54 ----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-220CFM
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
Package Code
30P10GI
Part Number
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
YWWSSS
LOGO
A1
A
c
E
φ
b
b1
e
L4
c2
A1
A
c
E
φ
b
b1
e
L4
c2
L3
L
Meet Rohs requirement
for low voltage MOSFET only
5
