BA779/BA779S
Document Number 85532
Rev. 1.7, 19-Feb-07
Vishay Semiconductors
www.vishay.com
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12
3
16923
RF PIN Diodes - Single in SOT23
Features
• Wide frequency range 10 MHz to 1 GHz
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
• Current controlled HF resistance in adjustable
attenuators
Mechanical Data
Case: SOT23 Plastic case
Weight: approx. 8.1 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Part Type differentiation Ordering code Type Marking Remarks
BA779 Zr > 5 kΩBA779-GS18 or BA779-GS08 PN Tape and Reel
BA779S Zr > 9 kΩBA779S-GS18 or BA779S-GS08 + PN Tape and Reel
Parameter Test condition Symbol Value Unit
Reverse voltage VR30 V
Forward continuous current IF50 mA
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air on PC board
50 mm x 50 mm x 1.6 mm
RthJA 500 K/W
Junction temperature Tj125 °C
Storage temperature range Tstg - 55 to + 125 °C
e3
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Document Number 85532
Rev. 1.7, 19-Feb-07
BA779/BA779S
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Part Symbol Min Typ. Max Unit
Forward voltage IF = 20 mA VF1000 mV
Reverse current VR = 30 V IR50 nA
Diode capacitance f = 100 MHz, VR = 0 CD0.5 pF
Differential forward resistance f = 100 MHz, IF = 1.5 mA rf50 Ω
Reverse impedance f = 100 MHz, VR = 0 BA779 zr5kΩ
BA779S zr9kΩ
Minority carrier lifetime IF = 10 mA, IR = 10 mA τ4µs
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Differential Forward Resistance vs. Forward Current
0 0.4 0.81.2 1.6
0.01
0.1
1
10
100
2.0
95 9735
I- Forward Current (mA)
F
VF- Forward Voltage (V)
Tamb= 25 °C
Scattering Limit
0.001 0.01 0.1 1
1
10
100
1000
10000
10
95 9734 IF- Forward Current (mA)
f>20MHz
Tj=25°C
r - Differential Forward Resistance ( )Ω
f
Figure 3. Typ. Cross Modulation Distortion vs. Frequency f2
- 80
- 60
- 40
- 20
0
20
a - Typical Cross Modulation Distortion (dB)
f2, modulated with 200 kHz, m = 100 % (MHz)
806040200
95 9733
- Circuit with 10 dB Attenuation
V0=40dBmV
f1= 100 MHz unmodulated
Π
BA779/BA779S
Document Number 85532
Rev. 1.7, 19-Feb-07
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in millimeters (inches): SOT23
17418
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Document Number 85532
Rev. 1.7, 19-Feb-07
BA779/BA779S
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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therein, which apply to these products.
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