1. Product profile
1.1 General description
PNP/PNP matched double transistor in a SOT143B small Surface-Mounted Device (SMD)
plastic package. Matched version of BCV62.
NPN/NPN equivalent: BCM61B
1.2 Features
nCurrent gain matching
1.3 Applications
nCurrent mirror
nDifferential amplifier
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BCM62B
PNP/PNP matched double transistor
Rev. 02 — 28 August 2009 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor TR1
VCEO collector-emitter voltage open base - - −45 V
hFE DC current gain VCE =−5V;
IC=−2mA 200 290 450
Per transistor
ICcollector current - - −100 mA
Per device
IC1/IE2 current matching VCE1 =−5V;
IE2 = 0.5 mA;
Tamb ≤25 °C
[1] 1 1.1 1.2
BCM62B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 2 of 13
NXP Semiconductors BCM62B
PNP/PNP matched double transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning
Pin Description Simplified outline Symbol
1 collector TR2, base TR1 and TR2
2 collector TR1
3 emitter TR1
4 emitter TR2 21
34
006aaa843
12
4
TR2 TR1
3
Table 3. Ordering information
Type number Package
Name Description Version
BCM62B - plastic surface-mounted package; 4 leads SOT143B
Table 4. Marking codes
Type number Marking code[1]
BCM62B *AD
BCM62B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 3 of 13
NXP Semiconductors BCM62B
PNP/PNP matched double transistor
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor TR1
VCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −45 V
Per transistor
VEBS emitter-base voltage VCB =0V - −5V
ICcollector current - −100 mA
ICM peak collector current single pulse;
tp≤1ms -−200 mA
Ptot total power dissipation Tamb ≤25 °C[1] - 220 mW
Per device
Ptot total power dissipation Tamb ≤25 °C[1] - 390 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 568 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 321 K/W
BCM62B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 4 of 13
NXP Semiconductors BCM62B
PNP/PNP matched double transistor
7. Characteristics
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor TR1
ICBO collector-base cut-off
current VCB =−30 V;
IE=0A --−15 nA
VCB =−30 V;
IE=0A;
Tj= 150 °C
--−5µA
IEBO emitter-base cut-off
current VEB =−5V;
IC=0A --−100 nA
hFE DC current gain VCE =−5V;
IC=−10 µA- 250 -
VCE =−5V;
IC=−100 µA100 - -
VCE =−5V;
IC=−2mA 200 290 450
VCEsat collector-emitter
saturation voltage IC=−10 mA;
IB=−0.5 mA -−50 −200 mV
IC=−100 mA;
IB=−5mA -−200 −400 mV
VBEsat base-emittersaturation
voltage IC=−10 mA;
IB=−0.5 mA [1] -−760 - mV
IC=−100 mA;
IB=−5mA [1] -−920 - mV
VBE base-emitter voltage VCE =−5V;
IC=−2mA [2] −600 −650 −700 mV
VCE =−5V;
IC=−10 mA [2] --−760 mV
Cccollector capacitance VCB =−10 V;
IE=i
e=0A;
f=1MHz
- - 2.2 pF
Ceemitter capacitance VEB =−0.5 V;
IC=i
c=0A;
f=1MHz
-10-pF
fTtransition frequency VCE =−5V;
IC=−10 mA;
f = 100 MHz
100 175 - MHz
NF noise figure VCE =−5V;
IC=−0.2 mA;
RS=2kΩ;
f = 10 Hz to
15.7 kHz
- 1.6 - dB
VCE =−5V;
IC=−0.2 mA;
RS=2kΩ;
f = 1 kHz;
B = 200 Hz
- 3.1 - dB
BCM62B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 5 of 13
NXP Semiconductors BCM62B
PNP/PNP matched double transistor
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Per transistor TR2
VEBS emitter-base voltage VCB =0V;
IE= 250 mA - - 1.5 V
VCB =0V;
IE=10µA400 - - mV
Per device
IC1/IE2 current matching VCE1 =−5V;
IE2 = 0.5 mA;
Tamb ≤25 °C
[3] 1 1.1 1.2
VCE1 =−5V;
IE2 = 0.5 mA;
Tamb ≤150 °C
[3] 1.02 - 1.22
VCE1 =−3V;
IE2 = 0.5 mA;
Tamb ≤25 °C
[3] 0.95 1.05 1.15
VCE1 =−1V;
IE2 = 0.5 mA;
Tamb ≤25 °C
[3] 0.9 1 1.1
Table 7. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
BCM62B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 6 of 13
NXP Semiconductors BCM62B
PNP/PNP matched double transistor
Tamb =25°CV
CE =−5V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Fig 1. Collector current as a function of
collector-emitter voltage; typical values Fig 2. DC current gain as a function of collector
current; typical values
IC/IB=20
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Fig 3. Base-emitter saturation voltage as a function
of collector current; typical values Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values
VCE (V)
0−10−8−4−6−2
006aaa832
−0.08
−0.12
−0.04
−0.16
−0.20
IC
(A)
0
IB (mA) = −2.5
−2.25 −1.75
−1.5
−1.25
−1
−0.75
−0.5
−0.25
−2
006aaa833
200
400
600
hFE
0
IC (mA)
−10−2−103
−102
−10−1−10−1
(3)
(2)
(1)
006aaa834
IC (mA)
−10−1−103
−102
−1−10
−0.5
−0.9
−1.3
VBEsat
(V)
−0.1
(3)
(2)
(1)
006aaa835
−1
−10−1
−10
VCEsat
(V)
−10−2
IC (mA)
−10−1−103
−102
−1−10
(3)
(2)
(1)
BCM62B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 7 of 13
NXP Semiconductors BCM62B
PNP/PNP matched double transistor
VCE =−5 V; Tamb =25°CV
CE =−5 V; Tamb =25°C
Fig 5. Base-emitter voltage as a function of collector
current; typical values Fig 6. Transition frequency as a function of collector
current; typical values
f = 1 MHz; Tamb =25°C f = 1 MHz; Tamb =25°C
Fig 7. Collector capacitance as a function of
collector-base voltage; typical values Fig 8. Emitter capacitance as a function of
emitter-base voltage; typical values
006aaa836
−0.6
−0.8
−1.0
VBE
(V)
−0.4
IC (mA)
−10−1−103
−102
−1−10 IC (mA)
−1−102
−10
006aaa837
102
103
fT
(MHz)
10
VCB (V)
0−10−8−4−6−2
006aaa838
3
5
7
Cc
(pF)
1
006aaa839
VEB (V)
0−6−4−2
9
11
7
13
15
Ce
(pF)
5
BCM62B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 8 of 13
NXP Semiconductors BCM62B
PNP/PNP matched double transistor
8. Test information
(1) VCE1 =−5V
(2) VCE1 =−3V
(3) VCE1 =−1V
Fig 9. Current matching as a function of emitter current 2; typical values
006aaa840
1.1
1.3
1.5
IC1/IE2
0.9
IE2 (mA)
−10−1−102
−10−1
(3)
(2)
(1)
Fig 10. Test circuit current matching
006aaa841
A
−VCE1
IC1
TR2TR1 IE2 =
constant
12
43
BCM62B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 9 of 13
NXP Semiconductors BCM62B
PNP/PNP matched double transistor
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 11. Package outline SOT143B
04-11-16Dimensions in mm
3.0
2.8 1.1
0.9
2.5
2.1 1.4
1.2
1.7
1.9
0.48
0.38 0.15
0.09
0.45
0.15
0.88
0.78
21
34
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
BCM62B SOT143B 4 mm pitch, 8 mm tape and reel -215 -235
BCM62B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 10 of 13
NXP Semiconductors BCM62B
PNP/PNP matched double transistor
11. Soldering
Dimensions in mm
Fig 12. Reflow soldering footprint SOT143B
Dimensions in mm
Fig 13. Wave soldering footprint SOT143B
msa441
0.60
(4x)
1.30
2.50
3.00
2.70
0.50 (3x)
0.60 (3x)
3.25
43
21
0.90
1.00
solder lands
solder resist
occupied area
solder paste
msa422
4.00 4.60
1.20 (3×)
4.45
12
34
1.15
3.40 1.00 preferred transport direction during soldering
solder lands
solder resist
occupied area
Dimensions in mm
BCM62B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 11 of 13
NXP Semiconductors BCM62B
PNP/PNP matched double transistor
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BCM62B_2 20090828 Product data sheet - BCM62B_1
Modifications: •This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•Figure 13 “Wave soldering footprint SOT143B”:updated
BCM62B_1 20060919 Product data sheet - -
BCM62B_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 12 of 13
NXP Semiconductors BCM62B
PNP/PNP matched double transistor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BCM62B
PNP/PNP matched double transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 August 2009
Document identifier: BCM62B_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Contact information. . . . . . . . . . . . . . . . . . . . . 12
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
