M29DW256G70NF6F - Micron Technology Inc.

Micron Parallel NOR Flash Embedded

Memory

M29DW256G X16 Multiple Bank, Page, Dual Boot 3V Supply Flash

Memory

Features

• Supply voltage

– VCC = 2.7–3.6V (program, erase, read)

– VCCQ = 1.65–3.6V (I/O buffers)

– VPPH = 9V for fast program (optional)

• Asynchronous random/page read

– Page size: 8 words

– Page access: 25ns, 30ns

– Random access: 70ns, 80ns

• Fast program commands: 32-word

• Enhanced buffered program commands: 256-word

• Program time

– 16µs per byte/word TYP

– Chip program time: 10 s with VPPH and 16s with-

out VPPH

• Memory organization

– Quadruple bank memory array: 32Mb + 96Mb +

96Mb + 32Mb with parameter blocks at top and

bottom

– Dual operation: program/erase in one bank

while reading in any other bank

• Program/erase controller

– Embedded word program algorithms

• Program/erase suspend and resume capability

– Read from any block during a PROGRAM SUS-

PEND operation

– Read or program another block during an ERASE

SUSPEND operation

• Unlock bypass, block erase, chip erase, write to buf-

fer, and enhanced buffer program commands

– Fast buffered/batch programming

– Fast block/chip erase

• VPP/WP# pin for fast program and write

– Protects the four outermost parameter blocks

• Software protection

– Volatile protection

– Nonvolatile protection

– Password protection

• Extended memory block

– Programmed or locked at the factory or by the

customer

– 128 word factory locked and 128 word customer

lockable

• Common flash interface

– 64-bit security code

• Low power consumption: standby and automatic

mode

• 100,000 minimum PROGRAM/ERASE cycles per

block

• Data retention: 20 years (TYP)

• Fortified BGA, TBGA, and TSOP packages

• Green packages available

– RoHS-compliant

– Halogen-free

• Automotive certified parts available

– Automotive device grade: temperature –40°C to

+85°C (automotive grade certified)

• Root part number

– M29DW256G

• Device code

– 227Eh + 223Ch + 2202h

256Mb: 3V Embedded Parallel NOR Flash

Features

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 1Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

Part Numbering Information

Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory

content bits erased to 1. For available options, such as packages or high/low protection, or for further information,

contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specifica-

tion comparison by device type is available at www.micron.com/products. Contact the factory for devices not

found.

Table 1: Part Number Information

Part Number

Category Category Details Notes

Device Type M29

Architecture D = Dual operation

Operating Voltage W = VCC = 2.7 to 3.6V

Device function 256G = 256Mb (x16) page, dual boot

Speed 70 = 70ns 1, 2

7A = 70ns 1, 2

Package NF = 56-pin TSOP, 14mm x 20mm, lead-free, halogen-free, RoHS-compliant

ZA = 64-pin TBGA, 10mm x 13mm, lead-free, halogen-free, RoHS-compliant

ZS = 64-pin Fortified BGA, 11mm x 13mm, lead-free, halogen-free, RoHS-compliant

Temperature Range 1 = 0 to 70°C

6 = –40°C to +85°C

Shipping Options E = RoHS-compliant package, standard packing

F = RoHS-compliant package, tape and reel packing

Notes: 1. 80ns if VCCQ = 1.65V to VCC.

2. Automotive certified –40°C to +85°C, available only with option 6.

256Mb: 3V Embedded Parallel NOR Flash

Features

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Contents

Important Notes and Warnings ......................................................................................................................... 7

Description ...................................................................................................................................................... 7

Signals ......................................................................................................................................................... 9

Signal Assignments ......................................................................................................................................... 10

Signal Descriptions ......................................................................................................................................... 12

Memory Organization .................................................................................................................................... 14

Memory Configuration ............................................................................................................................... 14

Block Addresses and Protection Groups ....................................................................................................... 15

Bus Operations ............................................................................................................................................... 19

Read .......................................................................................................................................................... 19

Write .......................................................................................................................................................... 19

Standby and Automatic Standby ................................................................................................................. 19

Output Disable ........................................................................................................................................... 20

Reset .......................................................................................................................................................... 20

Registers ........................................................................................................................................................ 21

Status Register ............................................................................................................................................ 21

Lock Register .............................................................................................................................................. 26

Standard Command Definitions – Address-Data Cycles .................................................................................... 28

READ and AUTO SELECT Operations .............................................................................................................. 31

READ/RESET Command ............................................................................................................................ 31

READ CFI Command .................................................................................................................................. 31

UNLOCK BYPASS READ CFI Command ....................................................................................................... 31

AUTO SELECT Command ........................................................................................................................... 31

Bypass Operations .......................................................................................................................................... 33

UNLOCK BYPASS Command ...................................................................................................................... 33

UNLOCK BYPASS RESET Command ............................................................................................................ 33

Program Operations ....................................................................................................................................... 34

PROGRAM Command ................................................................................................................................ 34

UNLOCK BYPASS PROGRAM Command ..................................................................................................... 34

WRITE TO BUFFER PROGRAM Command .................................................................................................. 34

UNLOCK BYPASS WRITE TO BUFFER PROGRAM Command ....................................................................... 37

WRITE TO BUFFER PROGRAM CONFIRM Command .................................................................................. 37

BUFFERED PROGRAM ABORT AND RESET Command ................................................................................ 37

PROGRAM SUSPEND Command ................................................................................................................ 37

PROGRAM RESUME Command .................................................................................................................. 38

WRITE TO BUFFER PROGRAM SUSPEND Command .................................................................................. 38

WRITE TO BUFFER PROGRAM RESUME Command .................................................................................... 39

ENTER ENHANCED BUFFERED Command ................................................................................................ 39

ENHANCED BUFFERED PROGRAM Command ........................................................................................... 39

ENHANCED BUFFERED PROGRAM ABORT RESET Command .................................................................... 40

EXIT ENHANCED BUFFERED PROGRAM Command ................................................................................... 42

Erase Operations ............................................................................................................................................ 43

CHIP ERASE Command .............................................................................................................................. 43

UNLOCK BYPASS CHIP ERASE Command ................................................................................................... 43

BLOCK ERASE Command ........................................................................................................................... 43

UNLOCK BYPASS BLOCK ERASE Command ................................................................................................ 44

ERASE SUSPEND Command ....................................................................................................................... 44

ERASE RESUME Command ........................................................................................................................ 45

Block Protection Command Definitions – Address-Data Cycles ........................................................................ 46

Protection Operations .................................................................................................................................... 48

256Mb: 3V Embedded Parallel NOR Flash

Features

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LOCK REGISTER Commands ...................................................................................................................... 48

PASSWORD PROTECTION Commands ....................................................................................................... 48

NONVOLATILE PROTECTION Commands .................................................................................................. 49

NONVOLATILE PROTECTION BIT LOCK BIT Commands ............................................................................ 50

VOLATILE PROTECTION Commands .......................................................................................................... 51

EXTENDED MEMORY BLOCK Commands .................................................................................................. 51

EXIT PROTECTION Command .................................................................................................................... 52

Device Protection ........................................................................................................................................... 53

Hardware Protection .................................................................................................................................. 53

Software Protection .................................................................................................................................... 53

Volatile Protection Mode ............................................................................................................................. 54

Nonvolatile Protection Mode ...................................................................................................................... 54

Password Protection Mode .......................................................................................................................... 55

Dual Operations and Multiple Bank Architecture ............................................................................................. 57

Common Flash Interface ................................................................................................................................ 59

Power-Up and Reset Characteristics ................................................................................................................ 62

Absolute Ratings and Operating Conditions ..................................................................................................... 64

DC Characteristics .......................................................................................................................................... 66

Read AC Characteristics .................................................................................................................................. 67

Write AC Characteristics ................................................................................................................................. 69

Accelerated Program, Data Polling/Toggle AC Characteristics ........................................................................... 73

Program/Erase Characteristics ........................................................................................................................ 75

Package Dimensions ....................................................................................................................................... 76

Revision History ............................................................................................................................................. 79

Rev. B – 5/18 ............................................................................................................................................... 79

Rev. A – 10/12 ............................................................................................................................................. 79

256Mb: 3V Embedded Parallel NOR Flash

Features

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List of Figures

Figure 1: Logic diagram ................................................................................................................................... 9

Figure 2: 56-Pin TSOP (Top View) .................................................................................................................. 10

Figure 3: 64-Pin Fortified BGA and 64-Pin TBGA ............................................................................................. 11

Figure 4: Block Addresses .............................................................................................................................. 14

Figure 5: Data Polling Flowchart .................................................................................................................... 23

Figure 6: Toggle Bit Flowchart ........................................................................................................................ 24

Figure 7: Status Register Polling Flowchart ..................................................................................................... 25

Figure 8: Lock Register Program Flowchart ..................................................................................................... 27

Figure 9: WRITE TO BUFFER PROGRAM Flowchart ........................................................................................ 36

Figure 10: ENHANCED BUFFERED PROGRAM Flowchart ............................................................................... 41

Figure 11: Program/Erase Nonvolatile Protection Bit Algorithm ...................................................................... 50

Figure 12: Software Protection Scheme .......................................................................................................... 56

Figure 13: Power-Up Timing .......................................................................................................................... 62

Figure 14: Reset AC Timing – No PROGRAM/ERASE Operation in Progress ...................................................... 63

Figure 15: Reset AC Timing During PROGRAM/ERASE Operation .................................................................... 63

Figure 16: AC Measurement Load Circuit ....................................................................................................... 65

Figure 17: AC Measurement I/O Waveform ..................................................................................................... 65

Figure 18: Random Read AC Timing ............................................................................................................... 67

Figure 19: Page Read AC Timing ..................................................................................................................... 68

Figure 20: WE#-Controlled Program AC Timing .............................................................................................. 70

Figure 21: CE#-Controlled Program AC Timing ............................................................................................... 72

Figure 22: Accelerated Program AC Timing ..................................................................................................... 73

Figure 23: Data Polling AC Timing .................................................................................................................. 74

Figure 24: Toggle/Alternative Toggle Bit Polling AC Timing .............................................................................. 74

Figure 25: 56-Pin TSOP – 14mm x 20mm ........................................................................................................ 76

Figure 26: 64-Pin TBGA – 10mm x 13mm ........................................................................................................ 77

Figure 27: 64-Ball Fortified BGA – 11mm x 13mm ........................................................................................... 78

256Mb: 3V Embedded Parallel NOR Flash

Features

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List of Tables

Table 1: Part Number Information ................................................................................................................... 2

Table 2: Signal names ...................................................................................................................................... 9

Table 3: Signal Descriptions ........................................................................................................................... 12

Table 4: Bank architecture ............................................................................................................................. 14

Table 5: Bank A ............................................................................................................................................. 15

Table 6: Bank B ............................................................................................................................................. 15

Table 7: Bank C ............................................................................................................................................. 17

Table 8: Bank D ............................................................................................................................................. 18

Table 9: Bus Operations ................................................................................................................................. 19

Table 10: Status Register Bit Definitions ......................................................................................................... 21

Table 11: Operations and Corresponding Bit Settings ...................................................................................... 22

Table 12: Lock Register Bit Definitions ............................................................................................................ 26

Table 13: Block Protection Status ................................................................................................................... 26

Table 14: Standard Command Definitions – Address-Data Cycles, 16-Bit ......................................................... 28

Table 15: Read Electronic Signature, Auto Select Mode and Programmer Method ............................................. 32

Table 16: Block protection (16-bit mode) ........................................................................................................ 32

Table 17: Block Protection Command Definitions – Address-Data Cycles, 16-Bit .............................................. 46

Table 18: Extended Memory Block Address and Data ...................................................................................... 51

Table 19: VPP/WP# Functions ......................................................................................................................... 53

Table 20: Dual Operations Allowed in Other Banks ......................................................................................... 57

Table 21: Dual Operations Allowed in Same Bank ........................................................................................... 58

Table 22: Query Structure Overview ............................................................................................................... 59

Table 23: CFI Query Identification String ........................................................................................................ 59

Table 24: CFI Query System Interface Information .......................................................................................... 60

Table 25: Device Geometry Definition ............................................................................................................ 60

Table 26: Primary Algorithm-Specific Extended Query Table ........................................................................... 61

Table 27: Security Code Area .......................................................................................................................... 61

Table 28: Power-Up Wait Timing Specifications .............................................................................................. 62

Table 29: Reset AC Specifications ................................................................................................................... 63

Table 30: Absolute Maximum/Minimum Ratings ............................................................................................ 64

Table 31: Operating Conditions ...................................................................................................................... 64

Table 32: Input/Output Capacitance1 ............................................................................................................. 65

Table 33: DC Current Characteristics .............................................................................................................. 66

Table 34: DC Voltage Characteristics .............................................................................................................. 66

Table 35: Read AC Characteristics .................................................................................................................. 67

Table 36: WE#-Controlled Write AC Characteristics ......................................................................................... 69

Table 37: CE#-Controlled Write AC Characteristics ......................................................................................... 71

Table 38: Accelerated Program and Data Polling/Data Toggle AC Characteristics .............................................. 73

Table 39: Program/Erase Characteristics ........................................................................................................ 75

256Mb: 3V Embedded Parallel NOR Flash

Features

CCMTD-1725822587-2414

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Important Notes and Warnings

Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document,

including without limitation specifications and product descriptions. This document supersedes and replaces all

information supplied prior to the publication hereof. You may not rely on any information set forth in this docu-

ment if you obtain the product described herein from any unauthorized distributor or other source not authorized

by Micron.

Automotive Applications. Products are not designed or intended for use in automotive applications unless specifi-

cally designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distrib-

utor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims,

costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of

product liability, personal injury, death, or property damage resulting directly or indirectly from any use of non-

automotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and con-

ditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron

products are not designed or intended for use in automotive applications unless specifically designated by Micron

as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to in-

demnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys'

fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage

resulting from any use of non-automotive-grade products in automotive applications.

Critical Applications. Products are not authorized for use in applications in which failure of the Micron compo-

nent could result, directly or indirectly in death, personal injury, or severe property or environmental damage

("Critical Applications"). Customer must protect against death, personal injury, and severe property and environ-

mental damage by incorporating safety design measures into customer's applications to ensure that failure of the

Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron

component for any critical application, customer and distributor shall indemnify and hold harmless Micron and

its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims,

costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of

product liability, personal injury, or death arising in any way out of such critical application, whether or not Mi-

cron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the

Micron product.

Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems,

applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAIL-

URE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE

WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR

PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included

in customer's applications and products to eliminate the risk that personal injury, death, or severe property or en-

vironmental damages will result from failure of any semiconductor component.

Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential

damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such damages are based on tort, warranty,

breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly

authorized representative.

Description

The M29DW256G is a 256Mb (16Mb x16) non-volatile memory that can be read, erased

and reprogrammed. These operations can be performed using a single low voltage (2.7

to 3.6 V) supply. At power-up the memory defaults to its read mode.

256Mb: 3V Embedded Parallel NOR Flash

Important Notes and Warnings

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The M29DW256G features an asymmetrical block architecture, with 8 parameter and

126 main blocks, divided into four banks, A, B, C and D, providing multiple bank opera-

tions. While programming or erasing in one bank, read operations are possible in any

other bank. Four of the parameter blocks are at the top of the memory address space,

and four are at the bottom.

Program and erase commands are written to the command interface of the memory. An

on-chip program/erase controller simplifies the process of programming or erasing the

memory by taking care of all of the special operations that are required to update the

memory contents. The end of a program or erase operation can be detected and any er-

ror conditions identified. The command set required to control the memory is consis-

tent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operations of the

memory. They allow simple connection to most microprocessors, often without addi-

tional logic.

The device supports asynchronous random read and page read from all blocks of the

memory array. The device also features a write to buffer program capability that im-

proves the programming throughput by programming 32 words in one instance. The

enhanced buffered program feature is also available to speed up programming through-

put, allowing 256 words to be programmed at once. The VPP/WP# signal can be used to

enable faster programming of the device.

The M29DW256G has one extra 256-word extended block that can be accessed using a

dedicated command: 128-Word factory locked and 128-Word customer lockable. The

extended block can be protected and so is useful for storing security information. How-

ever the protection is irreversible; once protected the protection cannot be undone.

The device features different levels of hardware and software block protection to avoid

unwanted program or erase (modify):

• Hardware protection: VPP/WP# provides hardware protection on four outermost pa-

rameter blocks (two at the top and two at the bottom of the address space)

• Software protection: Volatile protection, nonvolatile protection, password protection

The memory is offered in TSOP56 (14mm x 20mm), TBGA64 (10mm x 13mm, 1mm

pitch), and FBGA (11mm x 13mm) packages. The memory is delivered with all the bits

erased (set to ‘1’).

256Mb: 3V Embedded Parallel NOR Flash

Description

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Signals

Table 2: Signal names

Name Description Direction

A[23:0] Address inputs Inputs

DQ[15:0] Data inputs/outputs I/O

CE# Chip enable Input

OE# Output enable Input

WE# Write enable Input

RST# Reset Input

RY/BY# Ready/busy output Output

VCCQ Input/output buffer supply voltage Supply

VCC Supply voltage Supply

VPP/WP# VPP/write protect Supply/Input

VSS Ground –

NC Not connected –

Note: 1. 1 VPP/WP# may be left floating as it is internally connected to a pull-up resistor which

enables program/erase operations.

Figure 1: Logic diagram

VCC VCCQ

A[23:0]

WE#

VPP/WP#

DQ[15:0]

VSS

CE#

OE#

RST#

RY/BY#

256Mb: 3V Embedded Parallel NOR Flash

Description

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Signal Assignments

Figure 2: 56-Pin TSOP (Top View)

A23

A22

A15

A14

A13

A12

A11

A10

A19

A20

WE#

RST#

A21

VPP/WP#

RY/BY#

A18

A17

RFU

A16

RFU

VSS

DQ15

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VCC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

VSS

CE#

RFU

VCCQ

Note: 1. A[23] = A[MAX].

256Mb: 3V Embedded Parallel NOR Flash

Signal Assignments

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Figure 3: 64-Pin Fortified BGA and 64-Pin TBGA

RFU

VCCQ

RFU

CE#

OE#

VSS

A17

RY/BY#

VPP/WP#

A18

A20

D10

D11

RY/BY#

VPP/WP#

A18

A20

D10

D11

WE#

RST#

A21

A19

D12

VCC

WE#

RST#

A21

A19

D12

VCC

A10

A11

D14

D13

A10

A11

D14

D13

A13

A12

A14

A15

A16

RFU

D15

VSS

A13

A12

A14

A15

A16

RFU

D15

VSS

RFU

A22

A23

VCCQ

VSS

RFU

A22

A23

VCCQ

VSS

RFU

A17

CE#

OE#

VSS

RFU

VCCQ

RFU

Top view – ball side down Bottom view – ball side up

Note: 1. A[23] = A[MAX].

256Mb: 3V Embedded Parallel NOR Flash

Signal Assignments

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Signal Descriptions

The signal description table below is a comprehensive list of signals for this device fami-

ly. All signals listed may not be supported on this device. See Signal Assignments for in-

formation specific to this device.

Table 3: Signal Descriptions

Name Type Description

A[MAX:0] Input Address: Selects the cells in the array to access during READ operations. During WRITE oper-

ations, they control the commands sent to the command interface of the program/erase con-

troller.

DQ[15:0] I/O Data I/O: Outputs the data stored at the selected address during a READ operation. During

WRITE operations, they represent the commands sent to the command interface of the inter-

nal state machine. During WRITE operations, bits DQ[15:8] are not used. When reading the

status register, these bits should be ignored.

CE# Input Chip enable: Activates the device, enabling READ and WRITE operations to be performed.

When CE# is HIGH, the device goes to standby and data outputs are at HIGH-Z.

OE# Input Output enable: Controls the bus READ operation.

WE# Input Write enable: Controls the bus WRITE operation of the command interface.

VPP/WP# Input VPP/Write Protect: Provides two functions. The VPPH function enables the device to bypass

unlock cycles and use an external high voltage power supply to reduce time required for

PROGRAM operations.

Second, When VPP/WP# is LOW, the four outermost blocks of the address space (two 32KW

blocks at the top and two 32KW blocks at the bottom) are protected; PROGRAM and ERASE

operations are ignored and the blocks remain protected regardless of the block protection

status or the RST# pin state. When VPP/WP# is HIGH, the memory reverts to the previous pro-

tection status for those blocks (Refer to Hardware Protection and Bypass Operations for de-

tails).

RST# Input Reset: Applies a hardware reset to the device, which is achieved by holding RST# LOW for at

least tPLPX. After RST# goes HIGH, the device is ready for READ and WRITE operations (after

tPHEL or tRHEL, whichever occurs last). See RESET AC Specifications for more details.

RY/BY# Output Ready busy: Open-drain output that can be used to identify when the device is performing

a PROGRAM or ERASE operation. During PROGRAM or ERASE operations, RY/BY# is LOW,

and is High-Z during read mode, auto select mode, and erase suspend mode. After a hard-

ware reset, READ and WRITE operations cannot begin until RY/BY# goes High-Z (see RESET

AC Specifications for more details).

The use of an open-drain output enables the RY/BY# pins from several devices to be connec-

ted to a single pull-up resistor to VCCQ. A low value will then indicate that one or more of the

devices is busy.

VCC Supply Supply voltage: Provides the power supply for READ, PROGRAM, and ERASE operations.

The command interface is disabled when VCC <= VLKO. This prevents WRITE operations from

accidentally damaging the data during power-up, power-down, and power surges. If the pro-

gram/erase controller is programming or erasing during this time, then the operation aborts

and the contents being altered will be invalid.

A 0.1μF capacitor should be connected between VCC and VSS to decouple the current surges

from the power supply. The PCB track widths must be sufficient to carry the currents required

during PROGRAM and ERASE operations (see DC Characteristics).

256Mb: 3V Embedded Parallel NOR Flash

Signal Descriptions

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Table 3: Signal Descriptions (Continued)

Name Type Description

VCCQ Supply I/O supply voltage: Provides the power supply to the I/O pins and enables all outputs to be

powered independently from VCC.

VSS Supply Ground: All VSS pins must be connected to the system ground.

RFU – Reserved for future use: RFUs should be not connected.

256Mb: 3V Embedded Parallel NOR Flash

Signal Descriptions

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Memory Organization

Memory Configuration

The M29DW256G features an asymmetrical block architecture, with 8 parameter and

126 main blocks, divided into four banks providing multiple bank operations. Four pa-

rameter blocks are at the top of the memory address space, and four are at the bottom.

Table 4: Bank architecture

Bank Bank Size

Parameter Blocks Main Blocks

Number of Blocks Block Size Number of Blocks Block Size

A 32Mb 4 32 Kwords 15 128 Kwords

B 96Mb — — 48 128 Kwords

C 96Mb — — 48 128 Kwords

D 32Mb 4 32 Kwords 15 128 Kwords

Figure 4: Block Addresses

128 Kwords

800000h

81FFFFh

128 Kwords

FC0000h

FDFFFFh

Address lines A23-A0

128 Kwords

DE0000h

DFFFFFh

Total of 48

main blocks

128 Kwords

E00000h

E1FFFFh

32 Kwords

FF8000h

FFFFFFh

32 Kwords

FE0000h

FE7FFFh

Total of 15

main blocks

Total of 4

parameter

blocks

Bank C

Bank D

32 Kwords

000000h

007FFFh

128 Kwords

1E0000h

1FFFFFh

32 Kwords

018000h

01FFFFh

Total of 4

parameter

blocks

128 Kwords

020000h

03FFFFh

128 Kwords

7E0000h

7FFFFFh

128 Kwords

200000h

21FFFFh

Total of 15

main blocks

Total of 48

main blocks

Bank B

Bank A

256Mb: 3V Embedded Parallel NOR Flash

Memory Organization

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Block Addresses and Protection Groups

Table 5: Bank A

Block Protection Group Block Size (Kwords) 16-bit address range (in hexadecimal)

0 Protection Group 32 0000000 - 0007FFF

1 Protection Group 32 0008000 - 000FFFF

2 Protection Group 32 0010000 - 0017FFF

3 Protection Group 32 0018000 - 001FFFF

4 Protection Group 128 0020000 - 003FFFF

5 Protection Group 128 0040000 - 005FFFF

6 Protection Group 128 0060000 - 007FFFF

7 Protection Group 128 0080000 - 009FFFF

8 Protection Group 128 00A0000 - 00BFFFF

9 Protection Group 128 00C0000 - 00DFFFF

10 Protection Group 128 00E0000 - 00FFFFF

11 Protection Group 128 0100000 - 011FFFF

12 Protection Group 128 0120000 - 013FFFF

13 Protection Group 128 0140000 - 015FFFF

14 Protection Group 128 0160000 - 017FFFF

15 Protection Group 128 0180000 - 019FFFF

16 Protection Group 128 01A0000 - 01BFFFF

17 Protection Group 128 01C0000 - 01DFFFF

18 Protection Group 128 01E0000 - 01FFFFF

Table 6: Bank B

Block Protection Group Block Size (Kwords) 16-bit address range (in hexadecimal)

19 Protection Group 128 0200000 - 021FFFF

20 Protection Group 128 0220000 - 023FFFF

21 Protection Group 128 0240000 - 025FFFF

22 Protection Group 128 0260000 - 027FFFF

23 Protection Group 128 0280000 - 029FFFF

24 Protection Group 128 02A0000 - 02BFFFF

25 Protection Group 128 02C0000 - 02DFFFF

26 Protection Group 128 02E0000 - 02FFFFF

27 Protection Group 128 0300000 - 031FFFF

28 Protection Group 128 0320000 - 033FFFF

29 Protection Group 128 0340000 - 035FFFF

30 Protection Group 128 0360000 - 037FFFF

31 Protection Group 128 0380000 - 039FFFF

32 Protection Group 128 03A0000 - 03BFFFF

256Mb: 3V Embedded Parallel NOR Flash

Memory Organization

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Table 6: Bank B (Continued)

Block Protection Group Block Size (Kwords) 16-bit address range (in hexadecimal)

33 Protection Group 128 03C0000 - 03DFFFF

34 Protection Group 128 03E0000 - 03FFFFF

35 Protection Group 128 0400000 - 041FFFF

36 Protection Group 128 0420000 - 043FFFF

37 Protection Group 128 0440000 - 045FFFF

38 Protection Group 128 0460000 - 047FFFF

39 Protection Group 128 0480000 - 049FFFF

40 Protection Group 128 04A0000 - 04BFFFF

41 Protection Group 128 04C0000 - 04DFFFF

42 Protection Group 128 04E0000 - 04FFFFF

43 Protection Group 128 0500000 - 051FFFF

44 Protection Group 128 0520000 - 053FFFF

45 Protection Group 128 0540000 - 055FFFF

46 Protection Group 128 0560000 - 057FFFF

47 Protection Group 128 0580000 - 059FFFF

48 Protection Group 128 05A0000 - 05BFFFF

49 Protection Group 128 05C0000 - 05DFFFF

50 Protection Group 128 05E0000 - 05FFFFF

51 Protection Group 128 0600000 - 061FFFF

52 Protection Group 128 0620000 - 063FFFF

53 Protection Group 128 0640000 - 065FFFF

54 Protection Group 128 0660000 - 067FFFF

55 Protection Group 128 0680000 - 06FFFFF

56 Protection Group 128 06A0000 - 06BFFFF

57 Protection Group 128 06C0000 - 06DFFFF

58 Protection Group 128 06E0000 - 06FFFFF

59 Protection Group 128 0700000 - 071FFFF

60 Protection Group 128 0720000 - 073FFFF

61 Protection Group 128 0740000 - 075FFFF

62 Protection Group 128 0760000 - 077FFFF

63 Protection Group 128 0780000 - 079FFFF

64 Protection Group 128 07A0000 - 07BFFFF

65 Protection Group 128 07C0000 - 07DFFFF

66 Protection Group 128 07E0000 - 07FFFFF

256Mb: 3V Embedded Parallel NOR Flash

Memory Organization

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Table 7: Bank C

Block Protection Group Block Size (Kwords) 16-bit address range (in hexadecimal)

67 Protection Group 128 0800000 - 081FFFF

68 Protection Group 128 0820000 - 083FFFF

69 Protection Group 128 0840000 - 085FFFF

70 Protection Group 128 0860000 - 087FFFF

71 Protection Group 128 0880000 - 089FFFF

72 Protection Group 128 08A0000 - 08BFFFF

73 Protection Group 128 08C0000 - 08DFFFF

74 Protection Group 128 08E0000 - 08FFFFF

75 Protection Group 128 0900000 - 091FFFF

76 Protection Group 128 0920000 - 093FFFF

77 Protection Group 128 0940000 - 095FFFF

78 Protection Group 128 0960000 - 097FFFF

79 Protection Group 128 0980000 - 099FFFF

80 Protection Group 128 09A0000 - 09BFFFF

81 Protection Group 128 09C0000 - 09DFFFF

82 Protection Group 128 09E0000 - 09FFFFF

83 Protection Group 128 0A00000 - 0A1FFFF

84 Protection Group 128 0A20000 - 0A3FFFF

85 Protection Group 128 0A40000 - 0A5FFFF

86 Protection Group 128 0A60000 - 0A7FFFF

87 Protection Group 128 0A80000 - 0A9FFFF

88 Protection Group 128 0AA0000 - 0ABFFFF

89 Protection Group 128 0AC0000 - 0ADFFFF

90 Protection Group 128 0AE0000 - 0AFFFFF

91 Protection Group 128 0B00000 - 0B1FFFF

92 Protection Group 128 0B20000 - 0B3FFFF

93 Protection Group 128 0B40000 - 0B5FFFF

94 Protection Group 128 0B60000 - 0B7FFFF

95 Protection Group 128 0B80000 - 0B9FFFF

96 Protection Group 128 0BA0000 - 0BBFFFF

97 Protection Group 128 0BC0000 - 0BDFFFF

98 Protection Group 128 0BE0000 - 0BFFFFF

99 Protection Group 128 0C00000 - 0C1FFFF

100 Protection Group 128 0C20000 - 0C3FFFF

101 Protection Group 128 0C40000 - 0C5FFFF

102 Protection Group 128 0C60000 - 0C7FFFF

103 Protection Group 128 0C80000 - 0CFFFFF

104 Protection Group 128 0CA0000 - 0CBFFFF

256Mb: 3V Embedded Parallel NOR Flash

Memory Organization

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Table 7: Bank C (Continued)

Block Protection Group Block Size (Kwords) 16-bit address range (in hexadecimal)

105 Protection Group 128 0CC0000 - 0CDFFFF

106 Protection Group 128 0CE0000 - 0CFFFFF

107 Protection Group 128 0D00000 - 0D1FFFF

108 Protection Group 128 0D20000 - 0D3FFFF

109 Protection Group 128 0D40000 - 0D5FFFF

110 Protection Group 128 0D60000 - 0D7FFFF

111 Protection Group 128 0D80000 - 0D9FFFF

112 Protection Group 128 0DA0000 - 0DBFFFF

113 Protection Group 128 0DC0000 - 0DDFFFF

114 Protection Group 128 0DE0000 - 0DFFFFF

Table 8: Bank D

Block Protection Group Block Size (Kwords) 16-bit address range (in hexadecimal)

115 Protection Group 128 E00000h-E1FFFFh

116 Protection Group 128 E20000h-E3FFFFh

117 Protection Group 128 E40000h-E5FFFFh

118 Protection Group 128 E60000h-E7FFFFh

119 Protection Group 128 E80000h-E9FFFFh

120 Protection Group 128 EA0000h-EBFFFFh

121 Protection Group 128 EC0000h-EDFFFFh

122 Protection Group 128 EE0000h-EFFFFFh

123 Protection Group 128 F00000h-F1FFFFh

124 Protection Group 128 F20000h-F3FFFFh

125 Protection Group 128 F40000h-F5FFFFh

126 Protection Group 128 F60000h-F7FFFFh

127 Protection Group 128 F80000h-F9FFFFh

128 Protection Group 128 FA0000h-FBFFFFh

129 Protection Group 128 FC0000h-FDFFFFh

130 Protection Group 32 FE0000h-FE7FFFh

131 Protection Group 32 FE8000h-FEFFFFh

132 Protection Group 32 FF0000h-FF7FFFh

133 Protection Group 32 FF8000h-FFFFFFh

256Mb: 3V Embedded Parallel NOR Flash

Memory Organization

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Bus Operations

Table 9: Bus Operations

Notes 1 through 3 apply to entire table

Operation CE# OE# WE# RST# VPP/WP#

Address Inputs

Data Inputs/

Outputs

A[MAX], A[0] DQ[15:0]

READ L L H H X Cell address Data output

WRITE L H L H X4Command address Data input5

STANDBY H X X H X X High-Z

OUTPUT

DISABLE

L H H H X X High-Z

RESET X X X L X X High-Z

Notes: 1. Typical glitches of less than 5ns on CE#, WE#, and RST# are ignored by the device and do

not affect bus operations.

2. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW.

3. Dual operations are possible with the device multiple bank architecture. While program-

ming or erasing in one bank, read operations are possible in any of the other banks.

Write operations are only allowed in one bank at a time.

4. To write the four outermost parameter blocks (first two and the last two) VPP/WP# must

be equal to VIH.

5. Data input is required when issuing a command sequence or when performing data

polling or block protection.

Read

Bus READ operations read from the memory cells, registers, or CFI space. To accelerate

the READ operation, the memory array can be read in page mode where data is inter-

nally read and stored in a page buffer. Page size is 8 words and is addressed by address

inputs A[2:0].

A valid bus READ operation involves setting the desired address on the address inputs,

taking CE# and OE# LOW, and holding WE# HIGH. The data I/Os will output the value.

(See AC Characteristics for details about when the output becomes valid.)

Write

Bus WRITE operations write to the command interface. A valid bus WRITE operation

begins by setting the desired address on the address inputs. The address inputs are

latched by the command interface on the falling edge of CE# or WE#, whichever occurs

last. The data I/Os are latched by the command interface on the rising edge of CE# or

WE#, whichever occurs first. OE# must remain HIGH during the entire bus WRITE oper-

ation. (See AC Characteristics for timing requirement details.)

Standby and Automatic Standby

Driving CE# HIGH in read mode causes the device to enter standby, and data I/Os to be

High-Z. To reduce the supply current to the standby supply current (ICC2), CE# must be

held within VCC ±0.3V. (See DC Characteristics.)

256Mb: 3V Embedded Parallel NOR Flash

Bus Operations

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During PROGRAM or ERASE operations the device will continue to use the program/

erase supply current (ICC3) until the operation completes.

Automatic standby allows the memory to achieve low power consumption during read

mode. After a READ operation, if CMOS levels (VCC ± 0.3 V) are used to drive the bus

and the bus is inactive for tAVQV + 30ns or more, the memory enters automatic standby

where the internal supply current is reduced to the standby supply current, ICC2 (see

DC characteristics). The data inputs/outputs still output data if a READ operation is in

progress. Depending on load circuits connected with data bus, VCCQ, can have a null

consumption when the memory enters automatic standby.

Output Disable

Data I/Os are High-Z when OE# is HIGH.

Reset

During reset mode the device is deselected and the outputs are High-Z. The device is in

reset mode when RST# is LOW. The power consumption is reduced to the standby level,

independently from CE#, OE#, or WE# inputs.

256Mb: 3V Embedded Parallel NOR Flash

Bus Operations

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Registers

Status Register

Table 10: Status Register Bit Definitions

Note 1 applies to entire table

Bit Name Settings Description Notes

DQ7 Data polling

bit

0 or 1, depending on

operations

Monitors whether the program/erase controller has successful-

ly completed its operation, or has responded to an ERASE SUS-

PEND operation.

2, 3, 4

DQ6 Toggle bit Toggles: 0 to 1; 1 to 0;

and so on

Monitors whether the program/erase controller has successful-

ly completed its operations, or has responded to an ERASE

SUSPEND operation. During a PROGRAM/ERASE operation,

DQ6 toggles from 0 to 1, 1 to 0, and so on, with each succes-

sive READ operation from any address.

3, 4, 5

DQ5 Error bit 0 = Success

1 = Failure

Identifies errors detected by the program/erase controller. DQ5

is set to 1 when a PROGRAM, BLOCK ERASE, or CHIP ERASE op-

eration fails to write the correct data to the memory.

4, 6

DQ3 Erase timer

bit

0 = Erase not in progress

1 = Erase in progress

Identifies the start of program/erase controller operation dur-

ing a BLOCK ERASE command. Before the program/erase con-

troller starts, this bit set to 0, and additional blocks to be

erased can be written to the command interface.

DQ2 Alternative

toggle bit

Toggles: 0 to 1; 1 to 0;

and so on

Monitors the program/erase controller during ERASE opera-

tions. During CHIP ERASE, BLOCK ERASE, and ERASE SUSPEND

operations, DQ2 toggles from 0 to 1, 1 to 0, and so on, with

each successive READ operation from addresses within the

blocks being erased.

3, 4

DQ1 Buffered

program

abort bit

1 = Abort Indicates a BUFFER PROGRAM operation abort. The BUFFERED

PROGRAM ABORT and RESET command must be issued to re-

turn the device to read mode (see WRITE TO BUFFER PRO-

GRAM command).

Notes: 1. The status register can be read during PROGRAM, ERASE, or ERASE SUSPEND operations;

the READ operation outputs data on DQ[7:0].

2. For a PROGRAM operation in progress, DQ7 outputs the complement of the bit being

programmed. For a READ operation from the address previously programmed success-

fully, DQ7 outputs existing DQ7 data. For a READ operation from addresses with blocks

to be erased while an ERASE SUSPEND operation is in progress, DQ7 outputs 0; upon

successful completion of the ERASE SUSPEND operation, DQ7 outputs 1. For an ERASE

operation in progress, DQ7 outputs 0; upon either operation's successful completion,

DQ7 outputs 1.

3. After successful completion of a PROGRAM or ERASE operation, the device returns to

read mode.

4. During erase suspend mode, READ operations to addresses within blocks not being

erased output memory array data as if in read mode. A protected block is treated the

same as a block not being erased. See the Toggle Flowchart for more information.

5. During erase suspend mode, DQ6 toggles when addressing a cell within a block being

erased. The toggling stops when the program/erase controller has suspended the ERASE

operation. See the Toggle Flowchart for more information.

256Mb: 3V Embedded Parallel NOR Flash

Registers

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6. When DQ5 is set to 1, a READ/RESET command must be issued before any subsequent

command.

Table 11: Operations and Corresponding Bit Settings

Note 1 applies to entire table

Operation Address DQ7 DQ6 DQ5 DQ3 DQ2 DQ1 RY/BY# Notes

PROGRAM Any address DQ7# Toggle 0 – No toggle 0 0 2

PROGRAM during

ERASE SUSPEND

Any address DQ7# Toggle 0 – – – 0

ENHANCED

BUFFERED

PROGRAM Entry

Any address – Toggle 0 – – – 0

BUFFERED

PROGRAM ABORT

Any address DQ7# Toggle 0 – – 1 0 2

PROGRAM error Any address DQ7# Toggle 1 – – – High-Z

CHIP ERASE Any address 0 Toggle 0 1 Toggle – 0

BLOCK ERASE

before time-out

Erasing block 0 Toggle 0 0 Toggle – 0

Non-erasing block 0 Toggle 0 0 No toggle – 0

BLOCK ERASE Erasing block 0 Toggle 0 1 Toggle – 0

Non-erasing block 0 Toggle 0 1 No toggle – 0

ERASE SUSPEND Erasing block 1 No toggle 0 – Toggle – High-Z

Non-erasing block Outputs memory array data as if in read mode – High-Z

BLOCK ERASE

error

Good block

address

0 Toggle 1 1 No toggle – High-Z

Faulty block

address

0 Toggle 1 1 Toggle – High-Z

Notes: 1. Unspecified data bits should be ignored.

2. DQ7# for buffer program is related to the last address location loaded.

256Mb: 3V Embedded Parallel NOR Flash

Registers

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Figure 5: Data Polling Flowchart

Start

DQ7 = Data

DQ5 = 1

DQ1 = 1

DQ7 = Data

Yes

Read DQ7, DQ5, and DQ1

at valid address1

Read DQ7 at valid address

SuccessFailure 4

Notes: 1. Valid address is the address being programmed or an address within the block being

erased.

2. Failure results: DQ5 = 1 indicates an operation error; DQ1 = 1 indicates a WRITE TO BUF-

FER PROGRAM ABORT operation.

256Mb: 3V Embedded Parallel NOR Flash

Registers

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Figure 6: Toggle Bit Flowchart

DQ6 = Toggle

DQ5 = 1

DQ6 = Toggle

Yes

Start

Read DQ6 at valid address

Read DQ6, DQ5, and DQ1

at valid address

Read DQ6 (twice) at valid address

SuccessFailure1

DQ1 = 1

Yes

Note: 1. Failure results: DQ5 = 1 indicates an operation error; DQ1 = 1 indicates a WRITE TO BUF-

FER PROGRAM ABORT operation.

256Mb: 3V Embedded Parallel NOR Flash

Registers

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Figure 7: Status Register Polling Flowchart

WRITE TO BUFFER

PROGRAM

Start

DQ7 = Valid data

DQ5 = 1

Yes

DQ6 = Toggling Yes

No No

Yes

PROGRAM operation

DQ6 = Toggling

DQ2 = Toggling

Yes

DQ1 = 1

Read 3 correct data?

Yes

Device busy: Repolling

PROGRAM operation

complete

PROGRAM operation

failure

WRITE TO BUFFER

PROGRAM

abort

Timeout failure

ERASE operation

complete

Erase/suspend mode

Device error

Read2.DQ6 = Read3.DQ6

Read2.DQ2 = Read3.DQ2

Read1.DQ6 = Read2.DQ6

256Mb: 3V Embedded Parallel NOR Flash

Registers

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Lock Register

Table 12: Lock Register Bit Definitions

Note 1 applies to entire table

Bit Name Settings Description Notes

DQ[15:5] RFU – Reserved for future use 2

DQ4 Volatile

lock

boot bit

Programmable Sets default values for volatile block protection; when this

bit is programmed, blocks are protected at power-up.

DQ3 RFU – Reserved for future use 2

DQ2 Password

protection

mode lock

bit

0 = Password protection

mode enabled

1 = Password protection

mode disabled (Default)

Places the device permanently in password protection mode. 3

DQ1 Nonvolatile

protection

mode lock

bit

0 = Nonvolatile protection

mode enabled with pass-

word protection mode

permanently disabled

1 = Nonvolatile protection

mode enabled (Default)

Places the device in nonvolatile protection mode with pass-

word protection mode permanently disabled. When shipped

from the factory, the device will operate in nonvolatile pro-

tection mode, and the memory blocks are unprotected.

DQ0 Extended

memory

block

protection

bit

0 = Protected

1 = Unprotected (Default)

If the device is shipped with the extended memory block un-

locked, the block can be protected by setting this bit to 0.

The extended memory block protection status can be read in

auto select mode by issuing an AUTO SELECT command. It

can also be read by applying VID to A9.

Notes: 1. The lock register is a 16-bit, one-time programmable register.

2. DQ[15:5] and DQ[3] are reserved and are set to a default value of 1. During program-

ming, they must be held to 1.

3. The password protection mode lock bit and nonvolatile protection mode lock bit cannot

both be programmed to 0. Any attempt to program one while the other is programmed

causes the operation to abort, and the device returns to read mode. The device is ship-

ped from the factory with the default setting.

Table 13: Block Protection Status

Nonvolatile

Protection Bit

Lock Bit1

Nonvolatile

Protection

Bit2

Volatile

Protection

Bit3

Block

Protection

Status Block Protection Status

0 0 X 01h Block protected by nonvolatile protection bit; nonvolatile

protection bit unchangeable.

0 1 1 00h Block unprotected; nonvolatile protection bit unchangeable.

0 1 0 01h Block protected by volatile protection bit; nonvolatile protec-

tion bit unchangeable.

1 0 X 01h Block protected by nonvolatile protection bit; nonvolatile

protection bit changeable.

1 1 0 01h Block protected by volatile protection bit; nonvolatile protec-

tion bit changeable.

256Mb: 3V Embedded Parallel NOR Flash

Registers

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Table 13: Block Protection Status (Continued)

Nonvolatile

Protection Bit

Lock Bit1

Nonvolatile

Protection

Bit2

Volatile

Protection

Bit3

Block

Protection

Status Block Protection Status

1 1 1 00h Block unprotected; nonvolatile protection bit changeable.

Notes: 1. Nonvolatile protection bit lock bit: when cleared to 1, all nonvolatile protection bits are

unlocked; when set to 0, all nonvolatile protection bits are locked.

2. Block nonvolatile protection bit: when cleared to 1, the block is unprotected; when set

to 0, the block is protected.

3. Block volatile protection bit: when cleared to 1, the block is unprotected; when set to 0,

the block is protected.

Figure 8: Lock Register Program Flowchart

Start

Done?

DQ5 = 1

Yes

Enter LOCK REGISTER command set

Address/data (unlock) cycle 1

Address/data (unlock) cycle 2

Address/data cycle 3

PROGRAM LOCK REGISTER

Address/data cycle 1

Address/data cycle 2

Polling algorithm

Success:

EXIT PROTECTION command set

(Returns to device read mode)

Address/data cycle 1

Address/data cycle 2

Failure:

READ/RESET

(Returns device to read mode)

Notes: 1. Each lock register bit can be programmed only once.

2. See the Block Protection Command Definitions table for address-data cycle details.

256Mb: 3V Embedded Parallel NOR Flash

Registers

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Standard Command Definitions – Address-Data Cycles

Table 14: Standard Command Definitions – Address-Data Cycles, 16-Bit

Note 1 applies to entire table

Command and

Code/Subcode

Bus

Size

Address and Data Cycles

Notes

1st 2nd 3rd 4th 5th 6th

A D A D A D A D A D A D

READ and AUTO SELECT Operations

READ/RESET (F0h) x16 X F0

555 AA 2AA 55 X F0

READ CFI (98h) x16 BKA

555

UNLOCK BYPASS

READ CFI (98h)

x16 BKA 98

AUTO SELECT (90h) x16 555 AA 2AA 55 BKA

555

90 Note

Note

2, 3, 4

BYPASS Operations

UNLOCK BYPASS (20h) x16 555 AA 2AA 55 555 20

UNLOCK BYPASS

RESET (90h/00h)

x16 X 90 X 00

PROGRAM Operations

PROGRAM (A0h) x16 555 AA 2AA 55 555 A0 PA PD

UNLOCK BYPASS

PROGRAM (A0h)

x16 X A0 PA PD 5

WRITE TO BUFFER

PROGRAM (25h)

x16 555 AA 2AA 55 BAd 25 BAd N PA PD 6, 7, 8

UNLOCK BYPASS

WRITE TO BUFFER

PROGRAM (25h)

x16 BAd 25 BAd N PA PD 5

WRITE TO BUFFER

PROGRAM CONFIRM

(29h)

x16 BAd 29

BUFFERED PROGRAM

ABORT and RESET (F0h)

x16 555 AA 2AA 55 555 F0

ENTER

ENHANCED

BUFFERED

PROGRAM COMMAND

SET (38h)

x16 555 AA 2AA 55 555 38 9

ENHANCED

BUFFERED

PROGRAM (33h)

x16 BAd 33 BAd

(00)

Data BAd

(01)

Data 9

256Mb: 3V Embedded Parallel NOR Flash

Standard Command Definitions – Address-Data Cycles

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Table 14: Standard Command Definitions – Address-Data Cycles, 16-Bit (Continued)

Note 1 applies to entire table

Command and

Code/Subcode

Bus

Size

Address and Data Cycles

Notes

1st 2nd 3rd 4th 5th 6th

A D A D A D A D A D A D

ENHANCED

BUFFERED

PROGRAM CONFIRM

(29h)

x16 BAd

(00)

EXIT ENHANCED

BUFFERED

PROGRAM

COMMAND SET (90h)

x16 X 90 X 00

PROGRAM SUSPEND

(B0h)

x16 BKA B0

PROGRAM RESUME

(30h)

x16 BKA 30

WRITE TO BUFFER PRO-

GRAM SUSPEND (B0h)

x16 BAd B0

WRITE TO BUFFER PRO-

GRAM RESUME (30h)

x16 BAd 30

ERASE Operations

CHIP ERASE (80/10h) x16 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10

UNLOCK BYPASS

CHIP ERASE (80/10h)

x16 X 80 X 10 5

BLOCK ERASE (80/30h) x16 555 AA 2AA 55 555 80 555 AA 2AA 55 BAd 30 10

UNLOCK BYPASS

BLOCK ERASE (80/30h)

x16 X 80 BAd 30 5

ERASE SUSPEND (B0h) x16 BKA B0

ERASE RESUME (30h) x16 BKA 30

Notes: 1. A = Address; D = Data; X = "Don't Care;" BKA = Bank address; BAd = Any address in the

block; N = Number of bytes to be programmed; PA = Program address; PD = Program

data; Gray shading = Not applicable. All values in the table are hexadecimal. Some com-

mands require both a command code and subcode.

2. These cells represent READ cycles (versus WRITE cycles for the others).

3. AUTO SELECT enables the device to read the manufacturer code, device code, block pro-

tection status, and extended memory block protection indicator.

4. AUTO SELECT addresses and data are specified in the Electronic Signature table and the

Extended Memory Block Protection table.

5. For any UNLOCK BYPASS ERASE/PROGRAM command, the first two UNLOCK cycles are

unnecessary.

6. BAd must be the same as the address loaded during the WRITE TO BUFFER PROGRAM

3rd and 4th cycles.

7. WRITE TO BUFFER PROGRAM operation: maximum cycles 36 (x16). UNLOCK BYPASS

WRITE TO BUFFER PROGRAM operation: maximum cycles = 34 (x16). WRITE TO BUFFER

256Mb: 3V Embedded Parallel NOR Flash

Standard Command Definitions – Address-Data Cycles

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PROGRAM operation: N + 1 = bytes to be programmed; maximum buffer size = 32 words

(x16).

8. For x16, A[MAX:5] address pins should remain unchanged while A[4:0] pins are used to

select a word within the N + 1 word page.

9. The following is content for address-data cycles 256 through 258: BAd (FE) - Data; BAd

(FF) - Data; BAd (00) - 29.

10. BLOCK ERASE address cycles can extend beyond six address-data cycles, depending on

the number of blocks to erase.

256Mb: 3V Embedded Parallel NOR Flash

Standard Command Definitions – Address-Data Cycles

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READ and AUTO SELECT Operations

READ/RESET Command

The device is in read mode after a reset or power-up. The READ/RESET (F0h) command

returns the device to read mode and resets the errors in the status register. One or three

bus WRITE operations can be used to issue the READ/RESET command.

To return the device to read mode, this command can be issued between bus WRITE

cycles before the start of a PROGRAM or ERASE operation. If the READ/RESET com-

mand is issued during the timeout of a BLOCK ERASE operation, the device requires up

to 10μs to abort, during which time no valid data can be read.

The READ/RESET command will not abort a PROGRAM operation if executed while the

device is in program suspend, or an ERASE operation if executed while the device is in

erase suspend.

READ CFI Command

The READ CFI (98h) command puts the device in read CFI mode and is only valid when

the device is in read array or auto select mode. One bus WRITE cycle is required to issue

the command.

Once in read CFI mode, bus READ operations will output data from the CFI memory

area (Refer to the Common Flash Interface for details). A READ/RESET command must

be issued to return the device to the previous mode (read array or auto select ). A sec-

ond READ/RESET command is required to put the device in read array mode from auto

select mode.

UNLOCK BYPASS READ CFI Command

The UNLOCK BYPASS READ CFI (98h) command enables the device to read the CFI

when the device is in the unlock bypass mode.

Once in read CFI mode, bus READ operations will output data from the CFI memory

area (Refer to the Common Flash Interface for details). A READ/RESET command must

be issued to return the device to the previous mode (read array or auto select ). A sec-

ond READ/RESET command is required to put the device in read array mode from auto

select mode.

AUTO SELECT Command

At power-up or after a hardware reset, the device is in read mode. It can then be put in

auto select mode by issuing an AUTO SELECT (90h) command. Auto select mode ena-

bles the following device information to be read:

• Electronic signature, which includes manufacturer and device code information as

shown in the Electronic Signature tables.

• Block protection, which includes the block protection status and extended memory

block protection indicator, as shown in the Block Protection tables.

For example, auto select mode can be used by the programming equipment to auto-

matically match a device with the application code to be programmed.

Electronic signature or block protection information is read by executing a READ opera-

tion with control signals and addresses set, as shown in the Read Electronic Signature

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READ and AUTO SELECT Operations

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tables or the Block Protection tables, respectively. If the block is protected, then 01h is

output on data input/outputs DQ0-DQ7, otherwise 00h is output.

Three consecutive bus WRITE operations are required to issue an AUTO SELECT com-

mand. The device remains in auto select mode until a READ/RESET or READ CFI com-

mand is issued.

The device cannot enter auto select mode when a PROGRAM or ERASE operation is in

progress (RY/BY# LOW) unless the respective operation is suspended by a PROGRAM

SUSPEND or an ERASE SUSPEND command.

Auto select mode is exited by performing a reset. The device returns to read mode un-

less it entered auto select mode after an ERASE SUSPEND or PROGRAM SUSPEND

command, in which case it returns to erase or program suspend mode.

Table 15: Read Electronic Signature, Auto Select Mode and Programmer Method

Read cycle1E# G# W#

Address inputs Data IO

A[23:10] A[9:8] A[7:5] A4 A3 A2 A1 A0 DQ[15:0]

Manufacturer code VIL VIL VIH X X VIL X VIL VIL VIL VIL 0020h

Device code (cycle 1) X VIL VIL VIL VIH 227Eh

Device code (cycle 2) VIH VIH VIH VIL 223Ch

Device code (cycle 3) VIH VIH VIH VIH 2202h

Note: 1. X = VIL or VIH.

Table 16: Block protection (16-bit mode)

E# G# W# RST#

VPP/

WP#

Address inputs Data IO

A[23:12] A[11:10] A9 A8 A7 A6 A[5:4] A[3:2] A1 A0 Bits Value

Operation: Verify extended memory block indicator bit

VIL VIL VIH VIH VIH BKA X X X VIL VIL VIL VIL VIH VIH DQ[15:8] 0

DQ7 1 = factory locked

DQ6 1 = customer locked,

0 = customer lockable

DQ5 1 = reserved,

0 = standard

DQ[4:3] 00 = WP# protects 4

outermost blocks,

11 = No WP# protection

(hardware write

protection)

DQ[2:0] 0

Operation: Verify block protection status

VIL VIL VIH VIH VIH BAd X X X VIL VIL VIL VIL VIH VIL 0000h (unprotected)

0001h (protected)

Note: 1. X = VIL or VIH. BAd any address in the block, BKA bank address.

256Mb: 3V Embedded Parallel NOR Flash

READ and AUTO SELECT Operations

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Bypass Operations

UNLOCK BYPASS Command

The UNLOCK BYPASS (20h) command is used to place the device in unlock bypass

mode. Three bus WRITE operations are required to issue the UNLOCK BYPASS com-

mand.

When the device enters unlock bypass mode, the two initial UNLOCK cycles required

for a standard PROGRAM or ERASE operation are not needed, thus enabling faster total

program or erase time.

The UNLOCK BYPASS command is used in conjunction with UNLOCK BYPASS PRO-

GRAM or UNLOCK BYPASS ERASE commands to program or erase the device faster

than with standard PROGRAM or ERASE commands. When the cycle time to the device

is long, considerable time savings can be gained by using these commands. When in

unlock bypass mode, only the following commands are valid:

• The UNLOCK BYPASS PROGRAM command can be issued to program addresses

within the device.

• The UNLOCK BYPASS BLOCK ERASE command can be issued to erase one or more

memory blocks.

• The UNLOCK BYPASS CHIP ERASE command can be issued to erase the whole mem-

ory array.

• The UNLOCK BYPASS WRITE TO BUFFER PROGRAM command can be issued to

speed up the programming operation.

• The UNLOCK BYPASS CFI command can be issued to read the CFI when the memory

is in unlock bypass mode

• The UNLOCK BYPASS RESET command can be issued to return the device to read

mode.

In unlock bypass mode, the device can be read as if in read mode.

In addition to the UNLOCK BYPASS command, when VPP/WP# is raised to VPPH, the de-

vice automatically enters unlock bypass mode. When VPP/WP# returns to VIH or VIL, the

device is no longer in unlock bypass mode and normal operation resumes. The transi-

tions from VIH to VPPH and from VPPH to VIH must be slower than tVHVPP (see the Accel-

erated Program, Data Polling/Toggle AC Characteristics).

Note: Micron recommends the user enter and exit unlock bypass mode using ENTER

UNLOCK BYPASS and UNLOCK BYPASS RESET commands rather than raising VPP/WP#

to VPPH. VPP/WP# should never be raised to VPPH from any mode except read mode; oth-

erwise, the device may be left in an indeterminate state.

UNLOCK BYPASS RESET Command

The UNLOCK BYPASS RESET (90/00h) command is used to return to read/reset mode

from unlock bypass mode. Two bus WRITE operations are required to issue the UN-

LOCK BYPASS RESET command. The READ/RESET command does not exit from un-

lock bypass mode.

256Mb: 3V Embedded Parallel NOR Flash

Bypass Operations

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Program Operations

PROGRAM Command

The PROGRAM (A0h) command can be used to program a value to one address in the

memory array. The command requires four bus WRITE operations, and the final WRITE

operation latches the address and data in the internal state machine and starts the pro-

gram/erase controller.

Programming can be suspended and then resumed by issuing a PROGRAM SUSPEND

command and a PROGRAM RESUME command, respectively.

If the address falls in a protected block, the PROGRAM command is ignored, and the

data remains unchanged. The status register is not read, and no error condition is given.

After programming has started, bus READ operations output the status register content.

A bus READ operation from a bank different from the one whose blocks are being pro-

grammed will output the memory array content.

After the PROGRAM operation has completed, the device returns to read mode, unless

an error has occurred. When an error occurs, bus READ operations to the device contin-

ue to output the status register. A READ/RESET command must be issued to reset the

error condition and return the device to read mode.

The PROGRAM command cannot change a bit set to 0 back to 1, and an attempt to do

so is masked during a PROGRAM operation. Instead, an ERASE command must be used

to set all bits in one memory block or in the entire memory from 0 to 1.

The PROGRAM operation is aborted by performing a reset or by powering-down the de-

vice. In this case, data integrity cannot be ensured, and it is recommended that the

aborted data be reprogrammed.

UNLOCK BYPASS PROGRAM Command

When the device is in unlock bypass mode, the UNLOCK BYPASS PROGRAM (A0h)

command can be used to program one address in the memory array. The command re-

quires two bus WRITE operations instead of four required by a standard PROGRAM

command; the final WRITE operation latches the address and data and starts the pro-

gram/erase controller (The standard PROGRAM command requires four bus WRITE op-

erations). This UNLOCK BYPASS PROGRAM operation behaves identically to the PRO-

GRAM operation. The operation cannot be aborted. A bus READ operation from the

memory outputs the status register. A bus READ operation from a bank different from

the one whose blocks are being programmed will output the memory array content.

WRITE TO BUFFER PROGRAM Command

The WRITE TO BUFFER PROGRAM (25h) command makes use of the 32-word program

buffer to speed up programming. A maximum of 32 words can be loaded into the pro-

gram buffer; each write buffer has the same A[23:5]. The WRITE TO BUFFER PROGRAM

command dramatically reduces system programming time compared to the standard

non-buffered PROGRAM command.

When issuing a WRITE TO BUFFER PROGRAM command, V PP/WP# can be either held

HIGH or raised to VPPH. Also, it can be held LOW if the block is not one of the four outer-

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Program Operations

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most blocks, depending on the part number. The following successive steps are re-

quired to issue the WRITE TO BUFFER PROGRAM command:

First, two UNLOCK cycles are issued. Next, a third bus WRITE cycle sets up the WRITE

TO BUFFER PROGRAM command. The set-up code can be addressed to any location

within the targeted block. Then, a fourth bus WRITE cycle sets up the number of words

to be programmed. Value n is written to the same block address, where n + 1 is the

number of words to be programmed. Value n + 1 must not exceed the size of the pro-

gram buffer, or the operation will abort. A fifth cycle loads the first address and data to

be programmed. Last, n bus WRITE cycles load the address and data for each word into

the program buffer. Addresses must lie within the range from the start address +1 to the

start address + (n - 1).

Optimum programming performance and lower power usage are achieved by aligning

the starting address at the beginning of a 32-word boundary; otherwise, programming

time doubles. All addresses used in the operation must lie within the same page.

To program the content of the program buffer, this command must be followed by a

WRITE TO BUFFER PROGRAM CONFIRM command.

If an address is written several times during a WRITE TO BUFFER PROGRAM operation,

the address/data counter will be decremented at each data load operation, and the data

will be programmed to the last word loaded into the buffer.

Invalid address combinations or the incorrect sequence of bus WRITE cycles will abort

the WRITE TO BUFFER PROGRAM command.

The status register bits DQ1, DQ5, DQ6, DQ7 can be used to monitor the device status

during a WRITE TO BUFFER PROGRAM operation.

The WRITE TO BUFFER PROGRAM command should not be used to change a bit set to

0 back to 1, and an attempt to do so is masked during the operation. Rather than the

WRITE BUFFER PROGRAM command, the ERASE command should be used to set

memory bits from 0 to 1.

The WRITE TO BUFFER PROGRAM command can be suspended and then resumed by

issuing a PROGRAM SUSPEND command and then a PROGRAM RESUME command,

respectively.

After the WRITE TO BUFFER PROGRAM operation has completed, the memory will re-

turn to read mode, unless an error has occurred. When an error occurs, a read operation

from the bank being programmed will continue to output the status register. A read op-

eration from any bank other than the one being programmed will output the memory

array content.

256Mb: 3V Embedded Parallel NOR Flash

Program Operations

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Figure 9: WRITE TO BUFFER PROGRAM Flowchart

Abort

WRITE TO BUFFER

Write buffer data,

start address

Start

X = n

Write n,1

block address

WRITE TO BUFFER

and PROGRAM

aborted2

Write to a different

block address

X = 0

Write next data,3

program address pair

WRITE TO BUFFER

confirm, block address

X = X - 1

Yes

DQ7 = Data

Yes

DQ5 = 1

Yes

DQ1 = 1 No

Yes

WRITE TO BUFFER

command,

block address

Read data polling

DQ7) at last loaded

DQ7 = Data4

Yes

Check data polling

at last loaded address

Fail or

abort5End

First three cycles of the

WRITE TO BUFFER

PROGRAM command

address

Notes: 1. n + 1 is the number of addresses to be programmed.

2. The BUFFERED PROGRAM ABORT and RESET command must be issued to return the de-

vice to read mode.

3. When the block address is specified, any address in the selected block address space is

acceptable. However, when loading program buffer address with data, all addresses

must fall within the selected program buffer page.

4. DQ7 must be checked because DQ5 and DQ7 may change simultaneously.

5. If this flowchart location is reached because DQ5 = 1, then the WRITE TO BUFFER PRO-

GRAM command failed. If this flowchart location is reached because DQ1 = 1, then the

WRITE TO BUFFER PROGRAM command aborted. In both cases, the appropriate RESET

command must be issued to return the device to read mode: A RESET command if the

operation failed; a WRITE TO BUFFER PROGRAM ABORT AND RESET command if the op-

eration aborted.

6. See the Standard Command Definitions – Address-Data Cycles, 16-Bit table for details

about the WRITE TO BUFFER PROGRAM command sequence.

256Mb: 3V Embedded Parallel NOR Flash

Program Operations

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UNLOCK BYPASS WRITE TO BUFFER PROGRAM Command

When the device is in unlock bypass mode, the UNLOCK BYPASS WRITE TO BUFFER

(25h) command can be used to program the device in fast program mode. The com-

mand requires two bus WRITE operations fewer than the standard WRITE TO BUFFER

PROGRAM command.

The UNLOCK BYPASS WRITE TO BUFFER PROGRAM command behaves the same way

as the WRITE TO BUFFER PROGRAM command: the operation cannot be aborted, and

a bus READ operation from the memory outputs the status register. A bus READ opera-

tion from a bank different from the one whose blocks are being programmed will out-

put the memory array content.

The WRITE TO BUFFER PROGRAM CONFIRM command is used to confirm an UN-

LOCK BYPASS WRITE TO BUFFER PROGRAM command and to program the n + 1

words loaded in the program buffer by this command.

WRITE TO BUFFER PROGRAM CONFIRM Command

The WRITE TO BUFFER PROGRAM CONFIRM (29h) command is used to confirm a

WRITE TO BUFFER PROGRAM command and to program the n + 1 words loaded in the

program buffer by this command.

BUFFERED PROGRAM ABORT AND RESET Command

A BUFFERED PROGRAM ABORT AND RESET (F0h) command must be issued to abort

the WRITE TO BUFFER PROGRAM and ENHANCED BUFFERED PROGRAM operations

and reset the device in read mode. The buffer programming sequence can be aborted in

the following ways:

• Load a value that is greater than the page buffer size during the number of locations

to program in the WRITE TO BUFFER PROGRAM command.

• Write to an address in a different block than the one specified during the WRITE BUF-

FER LOAD command.

• Write an address/data pair to a different write buffer page than the one selected by

the starting address during the program buffer data loading stage of the operation.

• Write data other than the CONFIRM command after the specified number of data

load cycles.

The abort condition is indicated by DQ1 = 1, DQ6 = toggle, and DQ5 = 0 (all of which are

status register bits). A BUFFERED PROGRAM ABORT and RESET command sequence

must be written to reset the device for the next operation.

Note: The full three-cycle BUFFERED PROGRAM ABORT and RESET command se-

quence is required when using buffer programming features in unlock bypass mode.

PROGRAM SUSPEND Command

The PROGRAM SUSPEND (B0h) command can be used to interrupt a program opera-

tion so that data can be read from any block. When the PROGRAM SUSPEND command

is issued during a program operation, the device suspends the operation within the pro-

gram suspend latency time and updates the status register bits.

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Program Operations

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After the program operation has been suspended, data can be read from any address.

However, data is invalid when read from an address where a program operation has

been suspended.

The PROGRAM SUSPEND command may also be issued during a PROGRAM operation

while an erase is suspended. In this case, data may be read from any address not in

erase suspend or program suspend mode. To read from the extended memory block

area (one-time programmable area), the ENTER/EXIT EXTENDED MEMORY BLOCK

command sequences must be issued.

The system may also issue the AUTO SELECT command sequence when the device is in

program suspend mode. The system can read as many auto select codes as required.

When the device exits auto select mode, the device reverts to program suspend mode

and is ready for another valid operation.

The PROGRAM SUSPEND operation is aborted by performing a device reset or power-

down. In this case, data integrity cannot be ensured, and it is recommended that the

aborted data be reprogrammed.

PROGRAM RESUME Command

The PROGRAM RESUME (30h) command must be issued to exit a program suspend

mode and resume a PROGRAM operation. The controller can use DQ7 or DQ6 status

bits to determine the status of the PROGRAM operation. After a PROGRAM RESUME

command is issued, subsequent PROGRAM RESUME commands are ignored. Another

PROGRAM SUSPEND command can be issued after the device has resumed program-

ming.

WRITE TO BUFFER PROGRAM SUSPEND Command

The WRITE TO BUFFER PROGRAM SUSPEND (B0h) command can be used to interrupt

a write to buffer program operation so that data can be read from any block. When this

command is issued, the device suspends the operation within the program suspend la-

tency time and updates the status register bits.

After the operation has been suspended, data can be read from any address. However,

data is invalid when read from an address where a program operation has been suspen-

ded.

This command can also be issued during a WRITE TO BUFFER PROGRAM operation

while an erase is also suspended. In this case, data may be read from any address not in

erase suspend or program suspend mode. To read from the extended memory block

area (one-time programmable area), the ENTER/EXIT EXTENDED MEMORY BLOCK

command sequences must be issued.

The system may also issue the AUTO SELECT command sequence when the device is in

write to buffer program suspend mode. The system can read as many auto select codes

as required. When the device exits auto select mode, the device reverts to write to buffer

program suspend mode and is ready for another valid operation.

The PROGRAM SUSPEND operation is aborted by performing a device reset or power-

down. In this case, data integrity cannot be ensured, and it is recommended that the

aborted data be reprogrammed.

256Mb: 3V Embedded Parallel NOR Flash

Program Operations

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WRITE TO BUFFER PROGRAM RESUME Command

The WRITE TO BUFFER PROGRAM RESUME (30h) command must be issued to exit a

write to buffer program suspend mode and resume a WRITE TO BUFFER PROGRAM

operation. The controller can use DQ7 or DQ6 status bits to determine the status of the

WRITE TO BUFFER PROGRAM operation. After a WRITE TO BUFFER PROGRAM RE-

SUME command is issued, subsequent WRITE TO BUFFER PROGRAM RESUME com-

mands are ignored. Another WRITE TO BUFFER PROGRAM SUSPEND command can

be issued after the device has resumed programming.

ENTER ENHANCED BUFFERED Command

The ENTER ENHANCED BUFFERED command is used to allow execution of the en-

hanced buffered program commands. The device accepts only these following com-

mands after the ENTER ENHANCED BUFFERED command is issued; any other com-

mand is ignored:

• ENHANCED BUFFERED PROGRAM (can be issued multiple times once the ENTER

ENHANCED BUFFERED command is executed)

• ENHANCED BUFFERED PROGRAM ABORT/RESET

• EXIT ENHANCED BUFFERED PROGRAM

To ensure the ENTER ENHANCED BUFFERED command has completed successfully

and the device is ready to receive one of the commands listed above, it is recommended

to monitor toggle bit (DQ6).

ENHANCED BUFFERED PROGRAM Command

The ENHANCED BUFFERED PROGRAM command makes use of a 256-word write buf-

fer to speed up programming. Each write buffer has the same A23-A8 addresses. This

command dramatically reduces system programming time compared to both the

standard non-buffered PROGRAM command and the WRITE TO BUFFER command.

When issuing the ENHANCED BUFFERED PROGRAM command, the VPP/WP pin can

be held HIGH or raised to VPPH (see Program/Erase Characteristics). The following suc-

cessive steps are required to issue the ENHANCED BUFFERED PROGRAM command:

First, the ENTER ENHANCED BUFFERED PROGRAM command issued. Next, one bus

WRITE cycle sets up the ENHANCED BUFFERED PROGRAM command. The set-up

code can be addressed to any location within the targeted block. Then, a second bus

WRITE cycle loads the first address and data to be programmed. There are a total of 256

address and data loading cycles. When the 256 words are loaded to the buffer, a third

WRITE cycle programs the content of the buffer. Last, when the command completes,

the EXIT ENHANCED BUFFERED PROGRAM command is issued.

Address/data cycles must be loaded in an increasing address order, from A[7:0] =

00000000 to A[7:0] = 11111111 until all 256 words are loaded. Invalid address combina-

tions or the incorrect sequence of bus WRITE cycles will abort the ENHANCED BUF-

FERED PROGRAM command.

The status register bits DQ1, DQ5, DQ6, DQ7 can be used to monitor the device status

during an ENHANCED BUFFERED PROGRAM operation.

An external 12V supply can be used to improve programming efficiency.

256Mb: 3V Embedded Parallel NOR Flash

Program Operations

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When reprogramming data in a portion of memory already programmed (changing

programmed data from '0' to '1') operation failure can be detected by a logical OR be-

tween the previous and the current value.

ENHANCED BUFFERED PROGRAM ABORT RESET Command

After an ENHANCED BUFFERED PROGRAM command is aborted, the device will ac-

cept only an ENHANCED BUFFERED PROGRAM ABORT RESET (F0h) command. This

command resets the device following the aborted command and before the next com-

mand can be executed. When this command completes and the device is reset, the

memory waits for either an ENHANCED BUFFERED PROGRAM command or an EXIT

ENHANCED BUFFERED PROGRAM command. The enhanced buffered programming

sequence can be aborted in the following ways:

• Write to an address in a different block than the one specified during the ENHANCED

BUFFERED PROGRAM LOAD command.

• Write an address/data pair to a different write buffer page than the one selected by

the starting address during the program buffer data loading stage of the operation.

• Write data other than the CONFIRM command after the specified number of data

load cycles.

• Load address/data pairs in an incorrect sequence during the enhanced buffered pro-

gram.

• Load a number of data that is less or greater than 256 during the program step.

The abort condition is indicated by DQ1 = 1, DQ6 = toggle, and DQ5 = 0 (all of which are

status register bits). A BUFFERED PROGRAM ABORT and RESET command sequence

must be written to reset the device for the next operation.

256Mb: 3V Embedded Parallel NOR Flash

Program Operations

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Figure 10: ENHANCED BUFFERED PROGRAM Flowchart

ENHANCED

BUFFERED PROGRAM

command set

Start

Read

DQ5 and DQ6

at valid address

DQ6 =

toggle

DQ5 =1

Read DQ6

twice

at valid address

DQ6 =

toggle

Fail

Read DQ6 at

valid address

Read status register

(DQ1, DQ5, DQ7) at

last loaded address

DQ7 = Data

Check status register

(DQ5, DQ7) at

last loaded address

DQ5 = 1

DQ7 = Data

(3)

ENHANCED BUFFERED

PROGRAM confirm,

block address

Fail or Abort(4)

258th WRITE cycle of the

command

ENHANCED BUFFERED PROGRAM

End

New

Program?

Exit ENHANCED

BUFFERED PROGRAM

command set

Yes

DQ1 = 1

Yes

X = X-1

Write buffer data,

start address (00),

X=255

X = 0

Abort WRITE

TO BUFFER

Write next data, (2)

program address pair

Yes

Write to a different

block address

ENHANCED BUFFERED

PROGRAM aborted (1)

ENHANCED BUFFERED

PROGRAM command,

block address

Write next data, (2)

program address pair

First cycle of the

ENHANCED BUFFERED PROGRAM

command

Yes

Notes: 1. The ENHANCED BUFFERED PROGRAM ABORT RESET command must be issued to return

the device to read mode.

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Program Operations

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2. When the block address is specified, all addresses in the selected block address space

must be issued starting from 00h. Furthermore, when loading the write buffer address

with data, data program addresses must be consecutive.

3. DQ7 must be checked since DQ5 and DQ7 may change simultaneously.

4. If this flowchart location is reached because DQ5 = 1, then the ENHANCED BUFFERED

PROGRAM command failed. If this flowchart location is reached because DQ1 = 1, then

the ENHANCED BUFFERED PROGRAM command aborted. In both cases, the appropriate

reset command must be issued to return the device to read mode: A RESET command if

the operation failed; an ENHANCED BUFFERED PROGRAM ABORT RESET command if the

operation aborted.

EXIT ENHANCED BUFFERED PROGRAM Command

The EXIT ENHANCED BUFFERED PROGRAM command requires two bus write cycles

and is used to return the device to read mode. Until this command is issued, only the

ENHANCED BUFFERED PROGRAM command can be issued, and all other commands

are ignored.

256Mb: 3V Embedded Parallel NOR Flash

Program Operations

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Erase Operations

CHIP ERASE Command

The CHIP ERASE (80/10h) command erases the entire chip. Six bus WRITE operations

are required to issue the command and start the program/erase controller.

Protected blocks are not erased. If all blocks are protected, the CHIP ERASE operation

appears to start, but will terminate within approximately100μs, leaving the data un-

changed. No error is reported when protected blocks are not erased.

During the CHIP ERASE operation, the device ignores all other commands, including

ERASE SUSPEND. It is not possible to abort the operation. All bus READ operations dur-

ing CHIP ERASE output the status register on the data I/Os. See the Status Register sec-

tion for more details.

After the CHIP ERASE operation completes, the device returns to read mode, unless an

error has occurred. If an error occurs, the device will continue to output the status regis-

ter. A READ/RESET command must be issued to reset the error condition and return to

read mode.

The CHIP ERASE command sets all of the bits in unprotected blocks of the device to 1.

All previous data is lost.

The operation is aborted by performing a reset or by powering-down the device. In this

case, data integrity cannot be ensured, and it is recommended that the entire chip be

erased again.

UNLOCK BYPASS CHIP ERASE Command

When the device is in unlock bypass mode, the UNLOCK BYPASS CHIP ERASE (80/10h)

command can be used to erase all memory blocks at one time. The command requires

only two bus WRITE operations instead of six using the standard CHIP ERASE com-

mand. The final bus WRITE operation starts the program/erase controller.

The UNLOCK BYPASS CHIP ERASE command behaves the same way as the CHIP

ERASE command: the operation cannot be aborted, and a bus READ operation to the

memory outputs the status register.

BLOCK ERASE Command

The BLOCK ERASE (80/30h) command erases a list of one or more blocks. It sets all of

the bits in the unprotected selected blocks to 1. All previous data in the selected blocks

is lost.

Six bus WRITE operations are required to select the first block in the list. Each addition-

al block in the list can be selected by repeating the sixth bus WRITE operation using the

address of the additional block. After the command sequence is written, a block erase

timeout occurs. During the timeout period, additional block addresses and BLOCK

ERASE commands can be written. After the program/erase controller has started, it is

not possible to select any more blocks. Therefore, each additional block must be selec-

ted within the timeout period of the last block. The timeout timer restarts when an ad-

ditional block is selected. After the sixth bus WRITE operation, a bus READ operation

outputs the status register. Bus READ operations from banks different from those that

include the blocks being erased output the memory array content. See the WE#-Con-

256Mb: 3V Embedded Parallel NOR Flash

Erase Operations

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trolled Program waveforms for details on how to identify if the program/erase controller

has started the BLOCK ERASE operation.

After the BLOCK ERASE operation completes, the device returns to read mode, unless

an error has occurred. If an error occurs, bus READ operations will continue to output

the status register. A READ/RESET command must be issued to reset the error condi-

tion and return to read mode.

If any selected blocks are protected, they are ignored, and all the other selected blocks

are erased. If all of the selected blocks are protected, the BLOCK ERASE operation ap-

pears to start, but will terminate within approximately100μs, leaving the data un-

changed. No error condition is given when protected blocks are not erased.

During the BLOCK ERASE operation, the device ignores all commands except the

ERASE SUSPEND command and the READ/RESET command, which is accepted only

during the timeout period. The operation is aborted by performing a reset or powering-

down the device. In this case, data integrity cannot be ensured, and it is recommended

that the aborted blocks be erased again.

UNLOCK BYPASS BLOCK ERASE Command

When the device is in unlock bypass mode, the UNLOCK BYPASS BLOCK ERASE

(80/30h) command can be used to erase one or more memory blocks at a time. The

command requires two bus WRITE operations instead of six using the standard BLOCK

ERASE command. The final bus WRITE operation latches the address of the block and

starts the program/erase controller.

To erase multiple blocks (after the first two bus WRITE operations have selected the first

block in the list), each additional block in the list can be selected by repeating the sec-

ond bus WRITE operation using the address of the additional block.

The UNLOCK BYPASS BLOCK ERASE command behaves the same way as the BLOCK

ERASE command: the operation cannot be aborted, and a bus READ operation to the

memory outputs the status register. Bus READ operations from banks different from

those that include the blocks being erased output the memory array content. See the

BLOCK ERASE Command section for details.

ERASE SUSPEND Command

The ERASE SUSPEND (B0h) command temporarily suspends a BLOCK ERASE opera-

tion. One bus WRITE operation with the block address is required to issue the com-

mand.

After the command sequence is written, a minimum block erase timeout occurs. During

the timeout period, additional block addresses and block erase commands can be writ-

ten.

The program/erase controller suspends the ERASE operation within the erase suspend

latency time of the ERASE SUSPEND command being issued. However, when the

ERASE SUSPEND command is written during the block erase timeout, the device im-

mediately terminates the timeout period and suspends the ERASE operation. After the

program/erase controller has stopped, the device operates in read mode, and the erase

is suspended.

During an ERASE SUSPEND operation, it is possible to read and execute PROGRAM op-

erations or WRITE TO BUFFER PROGRAM operations in blocks that are not suspended.

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Erase Operations

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Both READ and PROGRAM operations behave normally on these blocks. Reading from

blocks that are suspended will output the status register. If any attempt is made to pro-

gram in a protected block or in the suspended block, the PROGRAM command is ignor-

ed, and the data remains unchanged. In this case, the status register is not read, and no

error condition is given.

It is also possible to issue the AUTO SELECT command after entering auto select mode.

The READ/RESET command must be issued to return the device to read array mode be-

fore the ERASE RESUME command will be accepted.

During an ERASE SUSPEND operation and after the ENTER EXTENDED MEMORY

BLOCK command is issued, a bus READ operation to the extended memory block will

output the extended memory block data. After the device enters extended memory

block mode, the EXIT EXTENDED MEMORY BLOCK command must be issued before

the ERASE operation can be resumed.

An ERASE SUSPEND command is ignored if it is written during a CHIP ERASE opera-

tion.

If the ERASE SUSPEND operation is aborted by performing a device reset or power-

down, data integrity cannot be ensured, and it is recommended that the suspended

blocks be erased again.

ERASE RESUME Command

The ERASE RESUME (30h) command restarts the program/erase controller after an

ERASE SUSPEND operation.

The device must be in read array mode before the ERASE RESUME command will be

accepted. An erase can be suspended and resumed more than once.

256Mb: 3V Embedded Parallel NOR Flash

Erase Operations

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Block Protection Command Definitions – Address-Data Cycles

Table 17: Block Protection Command Definitions – Address-Data Cycles, 16-Bit

Notes 1 and 2 apply to entire table

Command and

Code/Subcode

Bus

Size

Address and Data Cycles

Notes

1st 2nd 3rd 4th

…

nth

A D A D A D A D A D

LOCK REGISTER Commands

ENTER LOCK REGISTER

COMMAND SET (40h)

x16 555 AA 2AA 55 555 40 3

PROGRAM LOCK REGISTER

(A0h)

x16 X A0 X Data 5

READ LOCK REGISTER x16 X Data 4, 5, 6

PASSWORD PROTECTION Commands

ENTER PASSWORD

PROTECTION COMMAND

SET (60h)

x16 555 AA 2AA 55 555 60 3

PROGRAM PASSWORD

(A0h)

x16 X A0 PWAn PWDn 7

READ PASSWORD x16 00 PWD0 01 PWD1 02 PWD2 03 PWD3 4, 6, 8

UNLOCK PASSWORD

(25h/03)

x16 00 25 00 03 00 PWD0 01 PWD1 … 00 29 8

NONVOLATILE PROTECTION Commands

ENTER NONVOLATILE

PROTECTION COMMAND

SET (C0h)

x16 555 AA 2AA 55 (BKA)

BAd

C0 3

PROGRAM NONVOLATILE

PROTECTION BIT (A0h)

x16 X A0 (BKA)

BAd

READ NONVOLATILE

PROTECTION BIT STATUS

x16 (BKA)

BAd

READ(0) 4, 6,

CLEAR ALL NONVOLATILE

PROTECTION BITS (80/30h)

x16 X 80 00 30 11

NONVOLATILE PROTECTION BIT LOCK BIT Commands

ENTER NONVOLATILE

PROTECTION BIT LOCK BIT

COMMAND SET (50h)

x16 555 AA 2AA 55 555 50 3

PROGRAM NONVOLATILE

PROTECTION BIT LOCK BIT

(A0h)

x16 X A0 X 00 10

READ NONVOLATILE

PROTECTION BIT LOCK BIT

STATUS

x16 (BKA) READ(0) 4, 6,

VOLATILE PROTECTION Commands

256Mb: 3V Embedded Parallel NOR Flash

Block Protection Command Definitions – Address-Data Cycles

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Table 17: Block Protection Command Definitions – Address-Data Cycles, 16-Bit (Continued)

Notes 1 and 2 apply to entire table

Command and

Code/Subcode

Bus

Size

Address and Data Cycles

Notes

1st 2nd 3rd 4th

…

nth

A D A D A D A D A D

ENTER VOLATILE

PROTECTION COMMAND

SET (E0h)

x16 555 AA 2AA 55 (BKA)

555

E0 3

PROGRAM VOLATILE

PROTECTION BIT (A0h)

x16 X A0 (BKA)

BAd

READ VOLATILE

PROTECTION BIT STATUS

x16 (BKA)

BAd

READ(0) 4, 6,

CLEAR VOLATILE

PROTECTION BIT (A0h)

x16 X A0 (BKA)

BAd

EXTENDED MEMORY BLOCK Commands

ENTER EXTENDED

MEMORY BLOCK (88h)

x16 555 AA 2AA 55 555 88 3

READ EXTENDED

MEMORY BLOCK

x16 BAd RD

PROGRAM EXTENDED

MEMORY BLOCK

x16 X A0 BAd PD

EXIT EXTENDED

MEMORY BLOCK (90/00h)

x16 555 AA 2AA 55 555 90 X 00

EXIT PROTECTION Commands

EXIT PROTECTION

COMMAND SET (90/00h)

x16 X 90 X 00 3

Notes: 1. Key: A = Address and D = Data; X = "Don’t Care;" BAd = any address in the block; BKA =

Bank address; PWDn = password bytes 0 to 7; PWAn = password address, n = 0 to 7;

RD(0) = DQ0 protection indicator bit; If protected, DQ0 = 00h, while if unprotected, DQ0

= 01h. Gray = not applicable. All values in the table are hexadecimal.

2. DQ[15:8] are "Don’t Care" during UNLOCK and COMMAND cycles. A[MAX:16] are

"Don’t Care" during UNLOCK and COMMAND cycles, unless an address is required.

3. The ENTER command sequence must be issued prior to any operation. It disables READ

and WRITE operations from and to block 0. READ and WRITE operations from and to

any other block are allowed. Also, when an ENTER COMMAND SET command is issued,

an EXIT PROTECTION COMMAND SET command must be issued to return the device to

READ mode.

4. READ REGISTER/PASSWORD commands have no command code; CE# and OE# are driven

LOW and data is read according to a specified address.

5. Data = Lock register content.

6. All address cycles shown for this command are READ cycles.

7. Only one portion of the password can be programmed by each PROGRAM PASSWORD

command.

8. Each portion of the password can be entered or read in any order as long as the entire

64-bit password is entered or read.

9. For the x16 UNLOCK PASSWORD command, the nth (and final) address cycle equals the

7th address cycle. For the 5th and 6th address cycles, the values for the address and data

256Mb: 3V Embedded Parallel NOR Flash

Block Protection Command Definitions – Address-Data Cycles

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pair continue the pattern shown in the table as follows: address and data = 02 and

PWD2; 03 and PWD3.

10. Both nonvolatile and volatile protection bit settings are as follows: Protected state = 00;

Unprotected state= 01.

11. The CLEAR ALL NONVOLATILE PROTECTION BITS command programs all nonvolatile pro-

tection bits before erasure. This prevents over-erasure of previously cleared nonvolatile

protection bits.

Protection Operations

Blocks can be protected individually against accidental PROGRAM and ERASE opera-

tions. The block protection scheme is shown in the Software Protection Scheme figure.

Memory block and extended memory block protection is configured through the lock

LOCK REGISTER Commands

The ENTER LOCK REGISTER COMMAND SET (40h) requires three bus write cycles. Af-

ter it has been issued, all bus READ or PROGRAM operations can be issued to the lock

The EXIT PROTECTION COMMAND SET (90/00h) command must be used to exit the

lock register ane return to read mode.

The PROGRAM LOCK REGISTER (A0h) command allows the lock register to be config-

ured. The programmed data can then be checked with a READ LOCK REGISTER com-

mand by driving CE# and OE# LOW with the appropriate address data on the address

bus.

PASSWORD PROTECTION Commands

After the ENTER PASSWORD PROTECTION COMMAND SET (60h) command has been

issued, only commands related to password protection mode and the EXIT PROTEC-

TION COMMAND SET command can be issued to the device. This command requires

three bus write cycles. The EXIT PROTECTION COMMAND SET command must be is-

sued following all password protection commands to return the device to read mode.

The PROGRAM PASSWORD (A0h) command is used to program the 64-bit password

used in the password protection mode. To program the 64-bit password, the complete

command sequence must be entered four times at four consecutive addresses selected

by A[1:0] in 16-bit mode. This command must be used according to all program com-

mand timings. Command results can be verified by checking the status register. By de-

fault, all password bits are set to 1. The password can be checked by issuing a READ

PASSWORD command.

The READ PASSWORD command is used to verify the password used in password pro-

tection mode. To verify the 64-bit password, the complete command sequence must be

entered four times at four consecutive addresses selected by A[1:0] in 16-bit mode. If the

password mode lock bit is programmed and the user attempts to read the password, the

device will output FFh onto the I/O data bus.

The UNLOCK PASSWORD (25/03h) command is used to clear the nonvolatile protec-

tion bit lock bit, allowing the nonvolatile protection bits to be modified. The UNLOCK

PASSWORD command must be issued, along with the correct password, and requires a

256Mb: 3V Embedded Parallel NOR Flash

Protection Operations

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1μs delay between successive UNLOCK PASSWORD commands in order to prevent un-

authorized intruders from retrieving the password by trying all possible 64-bit combi-

nations. If this delay does not occur, the latest command will be ignored. Approximately

1μs is required for unlocking the device after the valid 64-bit password has been provi-

ded.

NONVOLATILE PROTECTION Commands

After the ENTER NONVOLATILE PROTECTION COMMAND SET (C0h) command has

been issued, the commands related to nonvolatile protection mode can be issued to the

device. This command requires three bus write cycles.

A block can be protected from program or erase by issuing a PROGRAM NONVOLATILE

PROTECTION BIT (A0h) command, along with the block address. This command sets

the nonvolatile protection bit to 0 for a given block. This command must be used ac-

cording to all program command timings. Command results can be verified by checking

the status register.

The status of a nonvolatile protection bit for a given block or group of blocks can be

read by issuing a READ NONVOLATILE MODIFY PROTECTION BIT command, along

with the block address.

The nonvolatile protection bits are erased simultaneously by issuing a CLEAR ALL

NONVOLATILE PROTECTION BITS (80/30h) command. No specific block address is re-

quired. If the nonvolatile protection bit lock bit is set to 0, the command fails.

256Mb: 3V Embedded Parallel NOR Flash

Protection Operations

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Figure 11: Program/Erase Nonvolatile Protection Bit Algorithm

Yes

DQ6 = Toggle

ENTER NONVOLATILE

PROTECTION

command set

Start

PROGRAM NONVOLATILE

PROTECTION BIT

Addr = BAd

Fail

Read byte twice

Addr = BAd

Read byte twice

Addr = BAd

Yes

DQ6 = Toggle

Reset

DQ5 = 1

EXIT PROTECTION

command set

DQ0 =

1 (erase)

0 (program)

Read byte twice

Addr = BAd

Wait 500µs

Pass

NONVOLATILE PROTECTION BIT LOCK BIT Commands

After the ENTER NONVOLATILE PROTECTION BIT LOCK BIT COMMAND SET (50h)

command has been issued, the commands that allow the nonvolatile protection bit lock

bit to be set can be issued to the device. This command requires three bus write cycles.

The PROGRAM NONVOLATILE PROTECTION BIT LOCK BIT (A0h) command is used to

set the nonvolatile protection bit lock bit to 0, thus locking the nonvolatile protection

bits and preventing them from being modified.

256Mb: 3V Embedded Parallel NOR Flash

Protection Operations

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The READ NONVOLATILE PROTECTION BIT LOCK BIT STATUS command is used to

read the status of the nonvolatile protection bit lock bit.

VOLATILE PROTECTION Commands

After the ENTER VOLATILE PROTECTION COMMAND SET (E0h) command has been

issued, commands related to the volatile protection mode can be issued to the device.

This command requires three bus write cycles.

The PROGRAM VOLATILE PROTECTION BIT (A0h) command individually sets a vola-

tile protection bit to 0 for a given block. If the nonvolatile protection bit for the same

block is set, the block is locked regardless of the value of the volatile protection bit. (See

the Block Protection Status table.)

The status of a volatile protection bit for a given block can be read by issuing a READ

VOLATILE PROTECTION BIT STATUS command along with the block address.

The CLEAR VOLATILE PROTECTION BIT (A0h) command individually clears (sets to 1)

the volatile protection bit for a given block. If the nonvolatile protection bit for the same

block is set, the block is locked regardless of the value of the volatile protection bit. (See

the Block Protection Status table.)

EXTENDED MEMORY BLOCK Commands

The device has one extra 256-word block (extended memory block) that can only be ac-

cessed by the ENTER EXTENDED MEMORY BLOCK command when the device is in ex-

tended block mode. The device can be shipped with the extended memory block pre-

locked permanently by Micron, or with the extended memory block unlocked, enabling

customers to permanently program and lock it. (See Lock Register, the AUTO SELECT

command, and the Block Protection table.)

The extended memory block is used as a security block (to provide a permanent securi-

ty identification number) or to store additional information. The extended memory

block is divided in two memory areas of 128 words each:

The first area is factory locked and the second one is customer lockable. It is perma-

nently protected from program operations and cannot be unprotected. The random

number, electronic serial number (ESN) and security identification number are written

in this section in the factory.

The second area is customer lockable. It is up to the customer to protect it from pro-

gram operations. Its status is indicated by bit DQ6 and DQ7. When DQ7 is set to 1 and

DQ6 to 0, it indicates that this second memory area is customer lockable. When DQ7

and DQ6 are both set to 1, it indicates that the second part of the extended memory

block is customer locked and protected from program operations. Bits DQ6 and DQ7

are the most significant bits in the extended block protection indicator and a specific

procedure must be followed to read it.

Table 18: Extended Memory Block Address and Data

Address

Data

Micron prelocked Customer Lockable

000000h–00007Fh Secure ID number Unavailable

000080h-0000FFh Unavailable Determined by customer

256Mb: 3V Embedded Parallel NOR Flash

Protection Operations

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Three Bus Write cycles are required to issue the Extended Memory Block command.

Once the command has been issued the device enters the extended memory block

mode where all bus read or program operations are conducted on the extended memo-

ry block. Once the device is in the extended block mode, the extended memory block is

addressed by using the addresses occupied by block 0 in the other operating modes (see

the Memory Map table).

The device remains in extended memory block mode until the EXIT EXTENDED MEM-

ORY BLOCK command is issued or power is removed from the device. After power-up or

hardware reset, the device reverts to read mode where the commands issued to the

block 0 address space will properly address block 0.

The extended memory block cannot be erased, and can be treated as one-time pro-

grammable (OTP) memory.

In extended block mode, Erase, Chip Erase, Erase Suspend and Erase Resume com-

mands are not allowed.

To exit from the extended memory block mode the EXIT EXTENDED MEMORY BLOCK

command must be issued. This command requires four bus write cycles.

The extended memory block can be protected by setting the extended memory block

protection bit to 0 (see Lock Register); however once protected the protection cannot be

undone.

Note: When the device is in the extended memory block mode, the VPP/WP pin cannot

be used for fast programming and the unlock bypass mode is not available (see VPP//

WP).

EXIT PROTECTION Command

The EXIT PROTECTION COMMAND SET (90/00h) command is used to exit the lock

tile protection bit lock bit command set modes and return the device to read mode.

256Mb: 3V Embedded Parallel NOR Flash

Protection Operations

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Device Protection

Hardware Protection

The VPP/WP# function provides a hardware method of protecting the four outermost

blocks; that is, the two 32-kword blocks at the top and the two 32-KWord blocks at the

bottom of the address space. When VPP/WP# is LOW, PROGRAM and ERASE operations

on the four outermost blocks are ignored to provide protection. When V PP/WP# is

HIGH, the device reverts to the previous protection status for these four outermost

blocks. PROGRAM and ERASE operations can modify the data in these blocks unless the

blocks are protected using block protection.

When VPP/WP# is raised to VPPH, the device automatically enters the unlock bypass

mode, and command execution time is faster. This must never be done from any mode

except read mode; otherwise the device might be left in an indeterminate state.

A 0.1 μF capacitor should be connected between the VPP/WP# pin and the VSS ground

pin to decouple the current surges from the power supply. The PCB track widths must

be sufficient to carry the currents required during unlock bypass program.

When VPP/WP# returns to HIGH or LOW, normal operation resumes. When operations

execute in unlock bypass mode, the device draws IPP from the pin to supply the pro-

gramming circuits. Transitions from HIGH to VPPH and from VPPH to LOW must be

slower than tVHVPP.

Note: Micron highly recommends driving VPP/WP# HIGH or LOW. If a system needs to

float the VPP/WP# pin, without a pull-up/pull-down resistor and no capacitor, then an

internal pull-up resistor is enabled.

Table 19: VPP/WP# Functions

VPP/WP# Settings Function

VIL Four outermost parameter blocks (first two and last two) protected from PROGRAM or

ERASE operations.

VIH Four outermost parameter blocks (first two and last two) unprotected from PROGRAM or

ERASE operations, unless a software activated protection is in place.

VPPH Unlock bypass mode supplies current necessary to speed up PROGRAM execution time.

Software Protection

The following software protection modes are available:

• Volatile protection

• Nonvolatile protection

• Password protection

The device is shipped with all blocks unprotected. On first use, the device defaults to

the nonvolatile protection mode but can be activated in either the nonvolatile protec-

tion or password protection mode.

The desired protection mode is activated by setting either the nonvolatile protection

mode lock bit or the password protection mode lock bit of the lock register (see the Lock

ter the protection mode has been activated, it cannot be changed, and the device is set

256Mb: 3V Embedded Parallel NOR Flash

Device Protection

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permanently to operate in the selected protection mode. It is recommended that the

desired software protection mode be activated when first programming the device.

For the four outermost blocks (that is the two blocks at the top and the two at the bot-

tom of the address space), an even higher level of block protection can be achieved by

locking the blocks using the non-volatile protection and then by holding VPP /WP#

LOW.

Blocks with volatile protection and nonvolatile protection can coexist within the memo-

ry array. If the user attempts to program or erase a protected block, the device ignores

the command and returns to read mode.

The block protection status can be read by performing a read electronic signature or by

issuing an AUTO SELECT command (see the Block Protection table).

Refer to the Block Protection Status table and the Software Protection Scheme figure for

details on the block protection scheme. Refer to the Protection Operations section for a

description of the command sets.

Volatile Protection Mode

Volatile protection enables the software application to protect blocks against inadver-

tent change and can be disabled when changes are needed. Volatile protection bits are

unique for each block and can be individually modified. Volatile protection bits control

the protection scheme only for unprotected blocks whose nonvolatile protection bits

are cleared to 1.

Issuing a PROGRAM VOLATILE PROTECTION BIT or CLEAR VOLATILE PROTECTION

BIT command sets to 0 or clears to 1 the volatile protection bits and places the associ-

ated blocks in the protected (0) or unprotected (1) state, respectively. The volatile pro-

tection bit can be set or cleared as often as needed. The default values of the volatile

protections are set through the volatile lock boot bit of the lock register (See the Lock

When the parts are first shipped, or after a power-up or hardware reset, the volatile pro-

tection bits can be set or cleared depending upon the ordering option chosen: if the op-

tion to clear the volatile protection bits after power-up is selected, then the blocks can

be programmed or erased depending on the nonvolatile protection bits state (See the

Block Protection Status table); If the option to set the volatile protection bits after pow-

er-up is selected, the blocks default to be protected (Refer also to the Protection com-

mands).

Nonvolatile Protection Mode

A nonvolatile protection bit is assigned to each block. Each of these bits can be set for

protection individually by issuing a PROGRAM NONVOLATILE PROTECTION BIT com-

mand. Also, each device has one global volatile bit called the nonvolatile protection bit

lock bit; it can be set to protect all nonvolatile protection bits at once. This global bit

must be set to 0 only after all nonvolatile protection bits are configured to the desired

settings. When set to 0, the nonvolatile protection bit lock bit prevents changes to the

state of the nonvolatile protection bits. When cleared to 1, the nonvolatile protection

bits can be set and cleared using the PROGRAM NONVOLATILE PROTECTION BIT and

CLEAR ALL NONVOLATILE PROTECTION BITS commands, respectively.

No software command unlocks the nonvolatile protection bit lock bit unless the device

is in password protection mode; in nonvolatile protection mode, the nonvolatile protec-

256Mb: 3V Embedded Parallel NOR Flash

Device Protection

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tion bit lock bit can be cleared only by taking the device through a hardware reset or

power-up.

Nonvolatile protection bits cannot be cleared individually; they must be cleared all at

once using a CLEAR ALL NONVOLATILE PROTECTION BITS command. They will re-

main set through a hardware reset or a power-down/power-up sequence.

If one of the nonvolatile protection bits needs to be cleared (unprotected), additional

steps are required: First, the nonvolatile protection bit lock bit must be cleared to 1, us-

ing either a power-cycle or hardware reset. Then, the nonvolatile protection bits can be

changed to reflect the desired settings. Finally, the nonvolatile protection bit lock bit

must be set to 0 to lock the nonvolatile protection bits. The device now will operate nor-

mally.

To achieve the best protection, the PROGRAM NONVOLATILE PROTECTION LOCK BIT

command should be executed early in the boot code, and the boot code should be pro-

tected by holding VPP/WP# LOW.

Nonvolatile protection bits and volatile protection bits have the same function when

VPP/WP# is HIGH or when VPP/WP# is at the voltage for program acceleration (VPPH ).

Password Protection Mode

Password protection mode provides a higher level of security than the nonvolatile pro-

tection mode by requiring a 64-bit password to unlock the nonvolatile protection bit

lock bit. In addition to this password requirement, the nonvolatile protection bit lock

bit is set to 0 after power-up and reset to maintain the device in password protection

mode.

Executing the UNLOCK PASSWORD command by entering the correct password clears

the nonvolatile protection bit lock bit, enabling the block nonvolatile protection bits to

be modified. If the password provided is incorrect, the nonvolatile protection bit lock

bit remains locked, and the state of the nonvolatile protection bits cannot be modified.

To place the device in password protection mode, the following two steps are required:

First, before activating the password protection mode, a 64-bit password must be set

and the setting verified. Password verification is allowed only before the password pro-

tection mode is activated. Next, password protection mode is activated by program-

ming the password protection mode lock bit to 0. This operation is irreversible; after the

bit is programmed, it cannot be erased. The device remains permanently in password

protection mode, and the 64-bit password can be neither retrieved nor reprogrammed.

In addition, all commands to the address where the password is stored are disabled.

Note: There is no means to verify the password after password protection mode is ena-

bled. If the password is lost after enabling the password protection mode, there is no

way to clear the nonvolatile protection bit lock bit.

NVPBs default to ‘1’ (block unprotected) after power-up and hardware reset. A block is

protected or unprotected when its NVPB is set to ‘0’ and ‘1’, respectively. NVPBs are

programmed individually and cleared collectively.

VPB default status depends on ordering option. A block is protected or unprotected

when its VPB is set to ‘0’ and ‘1’, respectively. VPBs are programmed and cleared indi-

vidually. For the volatile protection to be effective, the NVPB lock bit must be set to ‘0’

(NVPB bits unlocked) and the block NVPB must be set to ‘1’ (block unprotected).

256Mb: 3V Embedded Parallel NOR Flash

Device Protection

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 55 Micron Technology, Inc. reserves the right to change products or specifications without notice.

3. The NVPB lock bit is volatile and default to ‘1’ (NVPB bits unlocked) after power-up

and hardware reset. NVPB bits are locked by setting the NVPB lock bit to ‘0’. Once pro-

grammed to ‘0’, the NVPB lock bit can be reset to ‘1’ only be taking the device through a

power-up or hardware reset.

Figure 12: Software Protection Scheme

1 = unprotected (default)

0 = protected

1 = unprotected

0 = protected

(Default setting depends on the product order option)

Volatile protection bit Nonvolatile protection bit

1 = unlocked (default, after power-up or hardware reset)

0 = locked

Nonvolatile protection bit lock bit (volatile)

Nonvolatile protection

mode

Password protection

mode

Volatile

protection

Nonvolatile

protection

Array block

Notes: 1. Nonvolatile protection bits default to 1 (block unprotected) when the parts are first

shipped. A block is protected or unprotected when its nonvolatile protection bit is set to

0 and 1, respectively.

2. Volatile protection bits are programmed and cleared individually. Nonvolatile protection

bits are programmed individually and cleared collectively.

3. Volatile protection bit default status depends on ordering option. A block is protected

or unprotected when its volatile protection bit is set to 0 and 1, respectively. For the vol-

atile protection to be effective, the block nonvolatile protection bit must be set to 1

(block unprotected).

4. Once programmed to 0, the nonvolatile protection bit lock bit can be reset to 1 only by

taking the device through a power-up or hardware reset.

256Mb: 3V Embedded Parallel NOR Flash

Device Protection

CCMTD-1725822587-2414

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Dual Operations and Multiple Bank Architecture

The multiple bank architecture gives greater flexibility for software developers to split

the code and data spaces within the memory array. The dual operations feature simpli-

fies the software management of the device by allowing code to be executed from one

bank while another bank is being programmed or erased.

The dual operations feature means that while programming or erasing in one bank,

read operations are possible in another bank with zero latency.

Only one bank at a time is allowed to be in program or erase mode. However, certain

commands can cross bank boundaries, which means that during an operation only the

banks that are not concerned with the cross bank operation are available for dual oper-

ations. For example, if a Block Erase command is issued to erase blocks in both bank A

and bank B, then only banks C or D are available for read operations while the erase is

being executed.

If a read operation is required in a bank, which is programming or erasing, the program

or erase operation can be suspended.

Also if the suspended operation was erase then a program command can be issued to

another block, so the device can have one block in erase suspend mode, one program-

ming and other banks in read mode.

By using a combination of these features, read operations are possible at any moment.

The tables below show the dual operations possible in other banks and in the same

bank. Note that only the commonly used commands are represented in these tables.

Table 20: Dual Operations Allowed in Other Banks

Status of

bank

Commands Allowed in Another Bank

Read

Status

Register2

Read

CFI

Query

Auto

Select Program Erase

Program/Erase

Suspend

Program/Erase

Resume

Idle Yes Yes3Yes Yes Yes Yes Yes3Yes4

Programming Yes No No No – – No No

Erasing Yes No No No – – No No

Program

suspended

Yes No No Yes No No – No

Erase

suspended

Yes No No Yes Yes No – Yes5

Notes: 1. If several banks are involved in a program or erase operation, then only the banks that

are not concerned with the operation are available for dual operations.

2. Read Status Register is not a command. The status register can be read during a block

program or erase operation.

3. Only after a program or erase operation in that bank.

4. Only after a Program or Erase Suspend command in that bank.

5. Only an erase resume is allowed if the bank was previously in erase suspend mode.

256Mb: 3V Embedded Parallel NOR Flash

Dual Operations and Multiple Bank Architecture

CCMTD-1725822587-2414

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Table 21: Dual Operations Allowed in Same Bank

Status

of bank

Commands Allowed in Same Bank

Read

Status

Register1

Read

CFI

Query

Auto

Select Program Erase

Program/Erase

Suspend

Program/Erase

Resume

Idle Yes Yes Yes Yes Yes Yes Yes2Yes3

Programming No Yes No No – – Yes4–

Erasing No Yes No No – No Yes5–

Program

suspended

Yes No No Yes No – – Yes

Erase

suspended

Yes6Yes7No Yes Yes6No – Yes

Notes: 1. Read status register is not a command. The status register can be read during a block

program or erase operation.

2. Only after a program or erase operation in that bank.

3. Only after a Program or Erase Suspend command in that bank.

4. Only a program suspend.

5. Only an erase suspend.

6. Not allowed in the block or word that is being erased or programmed.

7. The status register can be read by addressing the block being erase suspended.

256Mb: 3V Embedded Parallel NOR Flash

Dual Operations and Multiple Bank Architecture

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Common Flash Interface

The common flash interface is a JEDEC approved, standardized data structure that can

be read from the flash memory device. It allows a system software to query the device to

determine various electrical and timing parameters, density information and functions

supported by the memory. The system can interface easily with the device, enabling the

software to upgrade itself when necessary.

When the Read CFI Query command is issued, the memory enters read CFI query mode

and read operations output the CFI data. The tables here show the addresses (A0-A7)

used to retrieve the data. The CFI data structure also contains a security area where a

64-bit unique security number is written (see Table 40: Security Code Area). This area

can be accessed only in read mode by the final user. It is impossible to change the se-

curity number after it has been written by Micron.

Table 22: Query Structure Overview

Note applies to the entire table.

Address

Sub-section name Descriptionx16

10h CFI query identification string Command set ID and algorithm data offset

1Bh System interface information Device timing & voltage information

27h Device geometry definition Flash device layout

40h Primary algorithm-specific extended query table Additional information specific to the primary

algorithm (optional)

61h Security code area 64-bit unique device number

Note: 1. Query data are always presented on the lowest order data outputs.

Table 23: CFI Query Identification String

Note applies to the entire table.

Address

Data Description Valuex16

10h 0051h ‘Q’

11h 0052h Query unique ASCII string ‘QRY’ ‘R’

12h 0059h ‘Y’

13h 0002h Primary algorithm command set and control interface ID code 16 bit

ID code defining a specific algorithm

Spansion

compatible

14h 0000h

15h 0040h Address for primary algorithm extended query table (see the Primary

Algorithm-Specific Extended Query Table)

P = 40h

16h 0000h

17h 0000h Alternate vendor command set and control interface ID code second

vendor - specified algorithm supported

18h 0000h

19h 0000h Address for alternate algorithm extended query table NA

1Ah 0000h

Note: 1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only.

DQ8-DQ15 are ‘0’.

256Mb: 3V Embedded Parallel NOR Flash

Common Flash Interface

CCMTD-1725822587-2414

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Table 24: CFI Query System Interface Information

Note applies to the entire table.

Address

Data Description Valuex16

1Bh 0027h VCC logic supply minimum program/erase voltage bit 7 to 4 BCD

value in volts bit 3 to 0 BCD value in 100 mV

2.7 V

1Ch 0036h VCC logic supply maximum program/erase voltage bit 7 to 4 BCD

value in volts bit 3 to 0 BCD value in 100 mV

3.6 V

1Dh 0085h VPPH [programming] supply minimum program/erase voltage bit

7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV

8.5 V

1Eh 0095h VPPH [programming] supply maximum program/erase voltage bit

7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV

9.5 V

1Fh 0004h Typical timeout for single word program = 2n µs 16 µs

20h 0004h Typical timeout for minimum size write buffer program = 2n µs 16 µs

21h 0009h Typical timeout for individual block erase = 2n ms 0.5 s

22h 0011h Typical timeout for full chip erase = 2n ms 80 s

23h 0004h Maximum timeout for word program = 2n times typical 200 µs

24h 0004h Maximum timeout for write buffer program = 2n times typical 200 µs

25h 0003h Maximum timeout per individual block erase = 2n times typical 2.3 s

26h 0004h Maximum timeout for chip erase = 2n times typical 800 s

Note: 1. The values given in the above table are valid for both packages.

Table 25: Device Geometry Definition

Address

Data Description Valuex16

27h 0019h Device size = 2n in number of bytes 32 Mbytes

28h 29h 0001h 0000h Flash device interface code description x16 async.

2Ah 2Bh 0006h 0000h Maximum number of bytes in multiple-byte program or

page= 2n

2Ch 0003h Number of Erase block regions. It specifies the number of

regions containing contiguous Erase blocks of the same

size.

2Dh 2Eh

2Fh

30h

0003h 0000h

0000h

0001h

Erase block region 1 information

2Dh-2Eh: number of erase blocks of identical size

2Fh-30h: block size (n*256 bytes)

4 blocks,

32-Kwords

31h 32h 33h

34h

007Dh 0000h 0000h

0004h

Erase block region 2 information 126 blocks,

128-Kwords

35h 36h 37h

38h

0003h 0000h 0000h

0001h

Erase block region 3 information 4 blocks,

32-Kwords

39h 3Ah 3Bh

3Ch

0000h 0000h 0000h

0000h

Erase block region 4 information NA

256Mb: 3V Embedded Parallel NOR Flash

Common Flash Interface

CCMTD-1725822587-2414

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Table 26: Primary Algorithm-Specific Extended Query Table

Address

Data Description Valuex16

40h 0050h Primary algorithm extended query table unique ASCII string “PRI” ‘P’

41h 0052h ‘R’

42h 0049h ‘I’

43h 0031h Major version number, ASCII ‘1’

44h 0033h Minor version number, ASCII ‘3’

45h 0010h Address sensitive unlock (bits 1 to 0) 00 = required, 01= not required

Silicon revision number (bits 7 to 2)

Yes 65 nm

46h 0002h Erase suspend 00 = not supported, 01 = read only, 02 = read and write 2

47h 0001h Block protection 00 = not supported, x = number of blocks per group 1

48h 0000h Temporary block unprotect 00 = not supported, 01 = supported Not supported

49h 0008h Block protect /unprotect 08 = M29DW256G 8

4Ah 0073h Simultaneous operations: x= block number (excluding bank A) 115

4Bh 0000h Burst mode, 00 = not supported, 01 = supported Not supported

4Ch 0002h Page mode, 00 = not supported, 02 = 8-word page 02

4Dh 0085h VPPH supply minimum program/erase voltage bit 7 to 4 HEX value in

volts bit 3 to 0 BCD value in 100 mV

8.5 V

4Eh 0095h VPPH supply maximum program/erase voltage bit 7 to 4 HEX value in

volts bit 3 to 0 BCD value in 100 mV

9.5 V

4Fh 0001h 01 = Dual Boot Dual Boot

50h 0001h Program suspend, 00 = not supported, 01 = supported Supported

51h 0001h Unlock bypass: 00 = not supported, 01 = supported Supported

52h 0008h Extended memory block size (customer lockable), 2n bytes 256

57h 0004h Bank organization, 00 = data at 4Ah is 0, x= bank number 4

58h 0013h Bank A information, x = number of blocks in bank A 19

59h 0030h Bank B information, x = number of blocks in bank B 48

5Ah 0030h Bank C information, x = number of blocks in bank C 48

5Bh 0013h Bank D information, x = number of blocks in bank D 19

Note: 1. The values given in the above table are valid for both packages.

Table 27: Security Code Area

Address

Data Descriptionx16

61h XXXX 64-bit: unique device number

62h XXXX

63h XXXX

64h XXXX

256Mb: 3V Embedded Parallel NOR Flash

Common Flash Interface

CCMTD-1725822587-2414

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Power-Up and Reset Characteristics

Table 28: Power-Up Wait Timing Specifications

Note 1 applies to the entire table

Parameter

Symbol

Min Max Unit NotesLegacy JEDEC

VCC HIGH to CE# LOW tVCH tVCHEL 55 – µs 2

VCCQ HIGH to CE# LOW – tVCQHEL 55 – µs 2

VCC HIGH to WE# LOW – tVCHWL 500 – µs

VCCQ HIGH to WE# LOW – tVCQHWL 500 – µs

Notes: 1. Specifications apply to 70 and 80ns devices unless otherwise noted.

2. VCC and VCCQ ramps must be synchronized during power-up.

Figure 13: Power-Up Timing

VCC

tVCQHEL

CE#

VCCQ

tVCQHWL

WE#

tVCHEL

tVCHWL

tRH

RST#

256Mb: 3V Embedded Parallel NOR Flash

Power-Up and Reset Characteristics

CCMTD-1725822587-2414

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Table 29: Reset AC Specifications

Note 1 applies to the entire table

Condition/Parameter

Symbol

Min Max Unit NotesLegacy JEDEC

RST# LOW to read mode during program or erase tREADY tPLRH – 55 µs 2

RST# pulse width tRP tPLPH 20 – µs

RST# HIGH to CE# LOW, OE# LOW tRH tPHEL,

tPHGL,

tPHWL

55 – ns 2

RST# LOW to standby mode during read mode tRPD – 20 – µs

RST# LOW to standby mode during program or erase 55 – µs

RY/BY# HIGH to CE# LOW, OE# LOW tRB tRHEL,

tRHGL,

tRHWL

0 – ns 2

Notes: 1. Specifications apply to 70 and 80ns devices unless otherwise noted.

2. Sampled only; not 100% tested.

Figure 14: Reset AC Timing – No PROGRAM/ERASE Operation in Progress

tRH

RY/BY#

CE#, OE#, WE#

RST#

tRP

Figure 15: Reset AC Timing During PROGRAM/ERASE Operation

tRB

RY/BY#

CE#, OE#, WE#

RST#

tRP

tRH

tREADY

256Mb: 3V Embedded Parallel NOR Flash

Power-Up and Reset Characteristics

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 63 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Absolute Ratings and Operating Conditions

Stresses greater than those listed may cause permanent damage to the device. This is a

stress rating only, and functional operation of the device at these or any other condi-

tions outside those indicated in the operational sections of this specification is not im-

plied. Exposure to absolute maximum rating conditions for extended periods may ad-

versely affect reliability.

Table 30: Absolute Maximum/Minimum Ratings

Parameter Symbol Min Max Unit Notes

Temperature under bias TBIAS –50 125 °C

Storage temperature TSTG –65 150 °C

Input/output voltage VIO –0.6 VCC + 0.6 V 1, 2

Supply voltage VCC –0.6 4 V

Input/output supply voltage VCCQ –0.6 4 V

Program voltage VPPH –0.6 10.5 V 3

Notes: 1. During signal transitions, minimum voltage may undershoot to −2V for periods less than

20ns.

2. During signal transitions, maximum voltage may overshoot to VCC + 2V for periods less

than 20ns.

3. VPPH must not remain at 9V for more than 80 hours cumulative.

Table 31: Operating Conditions

Parameter Symbol

70ns 80ns

UnitMin Max Min Max

Supply voltage VCC 2.7 3.6 2.7 3.6 V

Input/output supply voltage (VCCQ ≤ VCC) VCCQ 2.7 3.6 1.65 3.6 V

Ambient operating temperature (range

TA0 70 0 70 °C

Ambient operating temperature (range

TA–40 85 –40 85 °C

Load capacitance CL30 30 pF

Input rise and fall times – – 10 – 10 ns

Input pulse voltages – 0 to VCCQ 0 to VCCQ V

Input and output timing reference vol-

tages

– VCCQ/2 VCCQ/2 V

256Mb: 3V Embedded Parallel NOR Flash

Absolute Ratings and Operating Conditions

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 64 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 16: AC Measurement Load Circuit

VCCQ

25kΩ

Device

under

test

0.1µF

VCC

0.1µF

VPP

25kΩ

Note: 1. CL includes jig capacitance.

Figure 17: AC Measurement I/O Waveform

VCCQ

VCCQ/2

Table 32: Input/Output Capacitance1

Parameter Symbol Test Condition Min Max Unit

Input capacitance CIN VIN = 0V – 6 pF

Output capacitance COUT VOUT = 0V – 12 pF

Note: 1. Sampled only, not 100% tested.

256Mb: 3V Embedded Parallel NOR Flash

Absolute Ratings and Operating Conditions

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 65 Micron Technology, Inc. reserves the right to change products or specifications without notice.

DC Characteristics

Table 33: DC Current Characteristics

Parameter Symbol Conditions Min Typ Max Unit Notes

Input leakage current ILI 0V ≤ VIN ≤ VCC – – ±1 µA 1

Output leakage current ILO 0V ≤ VOUT ≤ VCC – – ±1 µA

VCC read

current

Random read ICC1 CE# = VIL, OE# = VIH,

f = 6 MHz

– – 10 mA

Page read CE# = VIL, OE# = VIH,

f = 10 MHz

– – 1 mA

VCC standby

current

ICC2 CE# = VCCQ ±0.2V,

RST# = VCCQ ±0.2V

– – 100 µA

VCC program/erase current ICC3 Program/

erase

controller

active

VPP/WP# = VIL

or VIH

– – 20 mA 2

VPP/WP# =

VPPH

– – 15 mA

VPP current Read IPP1 VPP/WP# ≤ VCC – 1 5 µA

Standby – 1 5 µA

Reset IPP2 RST# = VSS ±0.2V – 1 5 µA

PROGRAM operation

ongoing

IPP3 VPP/WP# = 12V ±5% – 1 10 mA

VPP/WP# = VCC – 1 5 mA

ERASE operation

ongoing

IPP4 VPP/WP# = 12V ±5% – 3 10 mA

VPP/WP# = VCC – 1 5 mA

Notes: 1. The maximum input leakage current is ±5µA on the VPP/WP# pin.

2. Sampled only; not 100% tested.

Table 34: DC Voltage Characteristics

Parameter Symbol Conditions Min Typ Max Unit Notes

Input LOW voltage VIL VCC ≥ 2.7V –0.5 – 0.3VCCQ V

Input HIGH voltage VIH VCC ≥ 2.7V 0.7VCCQ – VCCQ + 0.4 V

Output LOW voltage VOL IOL = 100µA,

VCC = VCC,min,

VCCQ = VCCQ,min

– – 0.15VCCQ V

Output HIGH voltage VOH IOH = 100µA,

VCC = VCC,min,

VCCQ = VCCQ,min

0.85VCCQ – – V

Voltage for VPP/WP# program

acceleration

VPPH – – 8.5 9.5 V

Program/erase lockout supply voltage VLKO – 1.8 – 2.5 V 1

Note: 1. Sampled only; not 100% tested.

256Mb: 3V Embedded Parallel NOR Flash

DC Characteristics

CCMTD-1725822587-2414

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Read AC Characteristics

Table 35: Read AC Characteristics

Parameter

Symbol

Condition

70ns

VCCQ = VCC

80ns

VCCQ = 1.65V

to VCC

Unit NotesMin Max Min MaxLegacy JEDEC

Address valid to next address

valid

tRC tAVAV CE# = VIL,

OE# = VIL

70 – 80 – ns

Address valid to output valid tACC tAVQV CE# = VIL,

OE# = VIL

– 70 – 80 ns

Address valid to output valid

(page)

tPAGE tAVQV1 CE# = VIL,

OE# = VIL

– 25 – 30 ns

CE# LOW to output transition tLZ tELQX OE# = VIL 0 – 0 – ns 1

CE# LOW to output valid tEtELQV OE# = VIL – 70 – 80 ns

OE# LOW to output transition tOLZ tGLQX CE# = VIL 0 – 0 – ns 1

OE# LOW to output valid tOE tGLQV CE# = VIL – 25 – 30 ns

CE# HIGH to output High-Z tHZ tEHQZ OE# = VIL – 25 – 30 ns 1

OE# HIGH to output High-Z tDF tGHQZ CE# = VIL – 25 – 30 ns 1

CE#, OE#, or address transition

to output transition

tOH tEHQX,

tGHQX,

tAXQX

– 0 – 0 – ns

Note: 1. Sampled only; not 100% tested.

Figure 18: Random Read AC Timing

Valid

tACC

tRC

tOH

tLZ

tOH

tHZ

tOLZ tOH

tOE tDF

A[MAX:0]

CE#

OE#

DQ[15:0]

256Mb: 3V Embedded Parallel NOR Flash

Read AC Characteristics

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 67 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 19: Page Read AC Timing

tGHQX

VALID

A[23:3]

OE#

DQ[15:0]

CE#

tELQV tEHQX

tGHQZ

VALID

A[2:0] VALID VALID VALID VALID

VALID VALID VALID

tAVQV

tAVQV1

VALID VALID VALID VALID

tGLQV

tEHQZ

256Mb: 3V Embedded Parallel NOR Flash

Read AC Characteristics

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 68 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Write AC Characteristics

Table 36: WE#-Controlled Write AC Characteristics

Parameter Symbol

70ns

VCCQ = VCC

80ns

VCCQ = 1.65V to

VCC Unit Notes

Legacy JEDEC Min Max Min Max

Address valid to next address valid tWC tAVAV 70 – 80 – ns

CE# LOW to WE# LOW tCS tELWL 0 – 0 – ns

WE# LOW to WE# HIGH tWP tWLWH 35 – 35 – ns

Input valid to WE# HIGH tDS tDVWH 45 – 45 – ns

WE# HIGH to input transition tDH tWHDX 0 – 0 – ns

WE# HIGH to CE# HIGH tCH tWHEH 0 – 0 – ns

WE# HIGH to WE# LOW tWPH tWHWL 30 – 30 – ns

Address valid to WE# LOW tAS tAVWL 0 – 0 – ns

WE# LOW to address transition tAH tWLAX 45 – 45 – ns

OE# HIGH to WE# LOW – tGHWL 0 – 0 – ns

WE# HIGH to OE# LOW tOEH tWHGL 0 – 0 – ns

Program/erase valid to RY/BY#

LOW

tBUSY tWHRL – 30 – 30 ns 1

VCC HIGH to CE# LOW tVCS tVCHEL 50 – 50 – µs

Note: 1. Sampled only; not 100% tested.

256Mb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

CCMTD-1725822587-2414

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Figure 20: WE#-Controlled Program AC Timing

555h PA PA

3rd Cycle 4th Cycle READ CycleData Polling

tWC tWC

tAS

tWP

tDS

tDF

tWHWH1

tWPH

tAH

tCS

tGHWL tOE

tDH

tOH

tCH

A[MAX:0]

CE#

OE#

WE#

DQ[15:0] AOh PD DQ7# DOUT DOUT

Notes: 1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-

GRAM command is followed by checking of the status register data polling bit and by a

READ operation that outputs the data (DOUT) programmed by the previous PROGRAM

command.

2. PA is the address of the memory location to be programmed. PD is the data to be pro-

grammed.

3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit

[DQ7]).

4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled

Write AC Characteristics, and CE#-Controlled Write AC Characteristics.

256Mb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 70 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 37: CE#-Controlled Write AC Characteristics

Parameter Symbol

70ns

VCCQ = VCC

80ns

VCCQ = 1.65V to

VCC Unit

Legacy JEDEC Min Max Min Max

Address valid to next address valid tWC tAVAV 75 – 85 – ns

WE# LOW to CE# LOW tWS tWLEL 0 – 0 – ns

CE# LOW to CE# HIGH tCP tELEH 35 – 35 – ns

Input valid to CE# HIGH tDS tDVEH 45 – 45 – ns

CE# HIGH to input transition tDH tEHDX 0 – 0 – ns

CE# HIGH to WE# HIGH tWH tEHWH 0 – 0 – ns

CE# HIGH to CE# LOW tCPH tEHEL 30 – 30 – ns

Address valid to CE# LOW tAS tAVEL 0 – 0 – ns

CE# LOW to address transition tAH tELAX 45 – 45 – ns

OE# HIGH to CE# LOW – tGHEL 0 – 0 – ns

256Mb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

CCMTD-1725822587-2414

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Figure 21: CE#-Controlled Program AC Timing

555h PA PA

3rd Cycle Read Cycle4th Cycle Data Polling

tWC

tAS

tCP

tDF tOH

tOE

tWC

tDS

tWHWH1

tCPH

tAH

tWS

tGHEL

tDH

tWH

A[MAX:0]

WE#

OE#

CE#

DQ[15:0] AOh PD DQ7# DOUT DOUT

Notes: 1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-

GRAM command is followed by checking of the status register data polling bit.

2. PA is the address of the memory location to be programmed. PD is the data to be pro-

grammed.

3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit

[DQ7]).

4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled

Write AC Characteristics, and CE#-Controlled Write AC Characteristics.

256Mb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

CCMTD-1725822587-2414

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Accelerated Program, Data Polling/Toggle AC Characteristics

Table 38: Accelerated Program and Data Polling/Data Toggle AC Characteristics

Note 1 applies to the entire table.

Parameter

Symbol

Min Max UnitLegacy JEDEC

VPP/WP# rising or falling time – tVHVPP 250 – ns

Address setup time to OE# LOW during toggle bit polling tASO tAXGL 10 – ns

Address hold time from OE# during toggle bit polling tAHT tGHAX, tEHAX 10 – ns

CE# HIGH during toggle bit polling tEPH tEHEL2 10 – ns

Output hold time during data and toggle bit polling tOEH tWHGL2,

tGHGL2

20 – ns

Program/erase valid to RY/BY# LOW tBUSY tWHRL – 30 ns

Note: 1. Specifications apply to 70, and 80ns devices unless otherwise noted.

Figure 22: Accelerated Program AC Timing

tVHVPP

VPPH

VIL or VIH

VPP/WP#

256Mb: 3V Embedded Parallel NOR Flash

Accelerated Program, Data Polling/Toggle AC Characteristics

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 73 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 23: Data Polling AC Timing

DQ7#Data DQ7# Valid DQ7

Data

Output flagData Output flag

Valid

DQ[6:0] Data

tHZ/tDF

tOE

tCH

tBUSY

tOEH

CE#

OE#

WE#

DQ[6:0]

DQ7

RY/BY#

Notes: 1. DQ7 returns a valid data bit when the PROGRAM or ERASE command has completed.

2. See the following tables for timing details: Read AC Characteristics, Accelerated Pro-

gram and Data Polling/Data Toggle AC Characteristics.

Figure 24: Toggle/Alternative Toggle Bit Polling AC Timing

Toggle Toggle ToggleData

Stop

toggling

Output

Valid

tBUSY

tOPH tEPH

tOEH

CE#

WE#

OE#

DQ6/DQ2

RY/BY#

tOPH

tAHT tASO

tAHT

tDH

tASO

A[MAX:0]/

A–1

tOE tCE

Notes: 1. DQ6 stops toggling when the PROGRAM or ERASE command has completed. DQ2 stops

toggling when the CHIP ERASE or BLOCK ERASE command has completed.

2. See the following tables for timing details: Read AC Characteristics, Accelerated Pro-

gram and Data Polling/Data Toggle AC Characteristics.

256Mb: 3V Embedded Parallel NOR Flash

Accelerated Program, Data Polling/Toggle AC Characteristics

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 74 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Program/Erase Characteristics

Table 39: Program/Erase Characteristics

Notes 1 and 2 apply to the entire table

Parameter Min Typ Max Unit Notes

Chip erase – 145 400 s 3

Chip erase VPP/WP# = VPPH – 125 400 s 3

Block erase (128 Kword) – 1 4 s 3, 4

Block erase (32 Kword) – 0.37 1.5 s

Erase suspend latency time – 25 45 µs

Block erase timeout 50 – – µs

Word program Single-word program – 16 200 µs 3

Write to buffer program

(32 words at-a-time)

VPP/WP# = VPPH – 50 200 µs 3

VPP/WP# = VIH – 70 200 µs 3

Chip program (word by word) – 270 400 s 3

Chip program (write to buffer program) – 25 200 s 3, 6

Chip program (write to buffer program with VPP/WP# = VPPH) – 13 50 s 3, 5

Chip program (enhanced buffered program) – 15 60 s 5

Chip program (enhanced buffered program with VPP/WP# = VPP) – 10 40 s 5

Program suspend latency time – 5 15 µs

PROGRAM/ERASE cycles (per block) 100,000 – – cycles

Data retention 20 – – years

Notes: 1. Typical values measured at room temperature and nominal voltages and for not cycled

devices.

2. Typical and maximum values are sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after

100,000 PROGRAM/ERASE cycles.

4. Block erase polling cycle time (see Data polling AC waveforms figure).

5. Intrinsic program timing, that means without the time required to execute the bus cy-

cles to load the PROGRAM commands.

256Mb: 3V Embedded Parallel NOR Flash

Program/Erase Characteristics

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 75 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Package Dimensions

Figure 25: 56-Pin TSOP – 14mm x 20mm

See Detail A

0.50 TYP

14.00 ±0.10

1.20 MAX

18.40 ±0.10

20.00 ±0.20

1.00 ±0.05

0.10 ±0.05

0.22 ± 0.05

Detail A

0.50 ±0.10

0.10

0.10 MIN/

0.21 MAX

Pin #1

3 / 5

o o

Notes: 1. All dimensions are in millimeters.

2. For the lead width value of 0.22 ±0.05, there is also a legacy value of 0.15 ±0.05.

256Mb: 3V Embedded Parallel NOR Flash

Package Dimensions

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 76 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 26: 64-Pin TBGA – 10mm x 13mm

BALL "A1"

0.10 MAX

0.50 TYP

1.00 TYP 0.80 TYP

1.20 MAX

1.50 TYP

3.00 TYP

0.50 TYP

7.00 TYP

10.00 ±0.10

13.00 ±0.10

0.35 MIN/

0.50 MAX

0.30 -0.10

+0.05

Note: 1. All dimensions are in millimeters.

256Mb: 3V Embedded Parallel NOR Flash

Package Dimensions

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 77 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 27: 64-Ball Fortified BGA – 11mm x 13mm

Seating

plane

0.80 TYP

0.15 MAX

13.00 ±0.10

0.60 ±0.05

1.00

TYP

3.00

TYP

7.00 TYP

1.40 MAX

Ball A1 ID

1.00

TYP

2.00 TYP

11.00 ±0.10

7.00 TYP

0.50 TYP

64X

87654321

0.48 ±0.05

Note: 1. All dimensions are in millimeters.

256Mb: 3V Embedded Parallel NOR Flash

Package Dimensions

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 78 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Revision History

Rev. B – 5/18

• Added Important Notes and Warnings section for further clarification aligning to in-

dustry standards

Rev. A – 10/12

• Initial Micron brand release

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000

www.micron.com/products/support Sales inquiries: 800-932-4992

Micron and the Micron logo are trademarks of Micron Technology, Inc.

All other trademarks are the property of their respective owners.

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.

Although considered final, these specifications are subject to change, as further product development and data characterization some-

times occur.

256Mb: 3V Embedded Parallel NOR Flash

Revision History

CCMTD-1725822587-2414

m29dw_256g.pdf - Rev. B 5/18 EN 79 Micron Technology, Inc. reserves the right to change products or specifications without notice.