TYPE
NAME
MITSUBISHI LASER DIODES
InGaAsP - MQW - FP LASER DIODES
FEATURES
1550nm typical emission wavelength, FP-LDs
Low threshold current, low operating current
Wide temperature range operation
(Tc=-20 to +85deg.C)
Have a lens-cap ( ML925C35F, ML920K35S )
MQW* active layer
* Multiple Quantum Well
APPLICATION
FTTH(Fiber to the Home) system
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25deg.C)
MITSUBISHI
ELECTRIC
mA
Symbol Parameter Test conditions Min. Typ. Max Unit
Ith
CW -10 30 mA
Iop
CW,Po=5mW[3mW] -50 mA
ηSlope efficiency CW,Po=5mW[3mW] 0.15[0.1] 0.25[0.2] -
V
Vop
CW,Po=5mW[3mW] 1.1 1.5
mW/mA
λ pPeak wavelength CW,Po=5mW[3mW] 1520 1550 1580 nm
Beam divergence angle (parallel) CW,Po=5mW[3mW]
Beam divergence angle
-0.3
-
IFD Forward current (Photodiode) -2mA
Symbol Parameter
Ratings[Note 1]
Po Light output power CW 6[4] mW
VRL Reverse voltage (laser diode) -2V
Reverse voltage (Photodiode)
20 V
Case temperature
-20 ~ +85
Tstg Storage temperature - - 40 ~ +100
(perpendicular)
3-
-25[11]
deg.-
0.5
ns
DESCRIPTION
ML9XX35 series are InGaAsP laser diodes which provides
a stable, single transverse mode oscillation with emission
wavelength of 1550nm and standard continuous light output
of 5mW.
ML9XX35 are hermetically sealed devices having the photo
diode for optical output monitoring. This is suitable for such
applications as FTTH(Fiber to the Home) systems.
tr,tf
ImMonitoring output current
CW,Po=5mW[3mW]
∆ λ
θ
θ
ID
Ct
Dark current (Photodiode)
Capacitance (Photodiode)
Spectral width (RMS) CW,Po=5mW[3mW]
If=Ith,Po=5mW[3mW],10 - 90%
CW,Po=5mW[3mW], VRD =1V
RD
RD
30
1.5
-
30[11]-
0.7
0.1 -
-
-
0.01
10
0.1
20
deg.
nm
pF
µA
ML920J35S , ML920K35S
ML925B35F , ML925C35F
deg.C
Note 1 : [ ] applied to the lens cap type
deg.C