CPH6616
No.8107-1/4
Features
•Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
•Excellent ON-resistance characteristic.
•Best suited for load switches.
•4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID2.5 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 10 A
Allowable Power Dissipation PD
Mounted on a ceramic board (900mm2✕0.8mm)1unit
0.9 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0 1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=1.5A 1.2 2.0 S
RDS(on)1 ID=1.5A, VGS=10V 79 105 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=1A, VGS=4V 150 210 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 187 pF
Output Capacitance Coss VDS=10V, f=1MHz 40 pF
Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 33 pF
Marking : WC Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8107
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D1004PE TS TB-00000655
CPH6616 N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH6616
No.8107-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Turn-ON Delay Time td(on) See specified Test Circuit. 7.8 ns
Rise T ime trSee specified Test Circuit. 18.5 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 22 ns
Fall T ime tfSee specified Test Circuit. 12 ns
Total Gate Charge Qg VDS=10V, VGS=10V, ID=2.5A 5.2 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=2.5A 1 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=2.5A 0.97 nC
Diode Forward Voltage VSD IS=2.5A, VGS=0 0.9 1.2 V
Package Dimensions Electrical Connection
unit : mm
2238
Switching Time Test Circuit
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
SANYO : CPH6
0.05
0.9
0.7 0.2 1.6 0.60.6
0.95
123
654
2.8
0.2
2.9 0.15
0.4
654
123
1 : Gate1
2 : Source2
3 : Gate2
4 : Drain2
5 : Source1
6 : Drain1
Top view
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=1.5A
RL=10Ω
VDD=15V
VOUT
VIN
10V
0V
VIN
CPH6616
No.8107-3/4
ID -- VDS
IT07298
ID -- VGS
IT07300
0
0
0
2.5
0.8 0.9 1.00.1 0.2 0.3 0.4 0.5 0.6 0.7
0.5
1.0
1.5
2.0
0
3.0
0.5
1.0
2.0
2.5
1.5
VGS=2.5V
4.0V
6.0V
10.0V
3.0V
VDS=10V
75
°
C
Ta=25
°
C
--25
°
C
4.03.02.5 3.50.5 1.0 1.5 2.0
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
IT07302
RDS(on) -- Ta
IT07304
0
0
400
24 86 10121416 2018 --60 --40 --20 0 20 40 60 80 100 120 140 160
350
150
200
250
300
100
50
0
300
100
150
250
50
200
Ta=25°C
ID=1.0A
1.5A
ID=
1.0
A, VGS=4V
ID=
1.5
A, VGS=10V
IT07308
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.21.1
0.01
0.1
1.0
7
5
3
2
7
5
3
2
5
3
2
IF -- VSD
IT07306
yfs-- ID
0.10.01 57235723 1.0 23 75
1.0
7
5
7
2
3
5
2
3
0.1
Ta=75
°
C
25
°
C
--25°C
VGS=0
VDS=10V
75°C
25
°
C
Ta= --25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Forward T ransfer Admittance,
y
fs -- S
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta --
°
C
Drain Current, ID -- A
Forward Current, IF -- A
Diode Forward Voltage, VSD -- V
SW Time -- ID
IT07310
100
10
1.0
3
2
5
7
3
2
5
7
3
2
0.01 0.1
23 57 23 57 23 5
1.0 70
10
100
5
3
7
5
3
2
2
305 10152025
Ciss, Coss, Crss -- VDS
IT07312
f=1MHz
VDD=15V
VGS=10V
td(off)
td(on)
Ciss
Coss
Crss
tr
tf
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- pF
Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V
CPH6616
No.8107-4/4
A S O
1.0
2
2
3
5
7
2
3
5
7
3
2
5
7
10
0.1
0.01 23 5 53723 572357
0.01 0.1 1.0 10 2
IT07316
VGS -- Qg
IT07314
0
0
1
2
3
5
4
6
7
8
9
6
10
12345
<10µs
100µs
1ms
10ms
100ms
Operation in this area
is limited by RDS(on).
ID=2.5A
DC operation (Ta=25
°C)
IDP=10A
VDS=10V
ID=2.5A
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2
✕0.8mm) 1unit
PD -- Ta
IT07318
0
020 40 60 80 100 120
0.8
0.9
1.0
140 160
0.6
0.4
0.2
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Mounted on a ceramic board (900mm
2
✕0.8mm) 1unit
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2004. Specifications and information herein are subject
to change without notice.
Note on usage : Since the CPH6616 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.