CPH6616 Ordering number : ENN8107 N-Channel Silicon MOSFET CPH6616 General-Purpose Switching Device Applications Features * * * * Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Excellent ON-resistance characteristic. Best suited for load switches. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS 20 V ID 2.5 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW10s, duty cycle1% 10 A Mounted on a ceramic board (900mm20.8mm)1unit 0.9 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS VGS(off) yfs Forward Transfer Admittance Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 Ratings min typ Unit max 30 VGS=16V, VDS=0 VDS=10V, ID=1mA 1.2 VDS=10V, ID=1.5A 1.2 V 1 A 10 A 2.6 V 2.0 S RDS(on)1 RDS(on)2 ID=1.5A, VGS=10V ID=1A, VGS=4V 79 105 m 150 210 m Input Capacitance Ciss VDS=10V, f=1MHz 187 pF Output Capacitance Coss VDS=10V, f=1MHz 40 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 33 pF Static Drain-to-Source On-State Resistance Marking : WC Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1004PE TS TB-00000655 No.8107-1/4 CPH6616 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 7.8 Rise Time tr td(off) See specified Test Circuit. 18.5 ns See specified Test Circuit. 22 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 12 ns VDS=10V, VGS=10V, ID=2.5A 5.2 nC 1 nC 0.97 Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=2.5A VDS=10V, VGS=10V, ID=2.5A Diode Forward Voltage VSD IS=2.5A, VGS=0 Package Dimensions unit : mm 2238 5 5 4 1 2 3 0.2 6 4 0.6 6 0.9 2.8 0.6 1.6 0.05 3 0.95 V 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 Top view 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 0.7 0.9 2 0.2 1 nC 1.2 Electrical Connection 0.15 2.9 ns 0.4 SANYO : CPH6 Switching Time Test Circuit VIN VDD=15V 10V 0V ID=1.5A RL=10 VIN D VOUT PW=10s D.C.1% G P.G 50 S No.8107-2/4 CPH6616 ID -- VDS VDS=10V 2.5 1.0 0.5 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 300 1.5A ID=1.0A 150 100 50 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V 20 3.0 3.5 4.0 IT07300 .0A, I D=1 150 4V V GS= 0V , V GS=1 100 I D=1.5A 50 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 IT07304 IF -- VSD 5 VDS=10V 5 2.5 200 IT07302 yfs -- ID 7 2.0 250 0 --60 0 2 1.5 RDS(on) -- Ta 300 350 0 1.0 Gate-to-Source Voltage, VGS -- V Ta=25C 250 0.5 IT07298 Static Drain-to-Source On-State Resistance, RDS(on) -- m VGS=0 3 2 C 5 2 1.0 7 = Ta 5 5 --2 C C 75 3 1.0 7 5 5 C 25 C --25 C 2 Forward Current, IF -- A 3 3 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- m 1.0 RDS(on) -- VGS 400 Forward Transfer Admittance, yfs -- S 1.0 0.5 VGS=2.5V 2 0.1 7 5 3 2 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 5 0.01 0.4 7 0.6 0.7 Ciss, Coss, Crss -- pF td(off) tf td(on) 7 5 1.2 IT07308 Ciss 100 7 5 Coss 3 Crss tr 3 1.1 f=1MHz 2 5 10 1.0 3 7 2 0.9 Ciss, Coss, Crss -- VDS 5 100 3 0.8 Diode Forward Voltage, VSD -- V VDD=15V VGS=10V 2 0.5 IT07306 SW Time -- ID 3 Switching Time, SW Time -- ns 1.5 C 3.0V 2.0 --25 1.5 Ta= 25 C 75 C Drain Current, ID -- A Drain Current, ID -- A 2.0 200 ID -- VGS 3.0 4.0 V 10.0V 6.0V 2.5 2 2 1.0 0.01 10 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 IT07310 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT07312 No.8107-3/4 CPH6616 VGS -- Qg 10 10 7 5 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 2 3 4 5 6 Total Gate Charge, Qg -- nC IT07314 PD -- Ta 1.0 ID=2.5A <10s 10 1m 0s s 10 m DC op 10 s 0m s er ati on 3 2 1 1 IDP=10A 1.0 7 5 2 0 Allowable Power Dissipation, PD -- W 3 2 0.1 7 5 3 0 ASO 2 VDS=10V ID=2.5A (T a= 25 C Operation in this area is limited by RDS(on). ) Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT07316 0.9 M ou 0.8 nte do na ce ram 0.6 ic bo ard (9 00 mm 0.4 2 0 .8m m) 0.2 1u nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT07318 Note on usage : Since the CPH6616 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. PS No.8107-4/4