2SK3651-01R [0311] FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-3PF High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Ratings Unit V 250 V 220 A Continuous drain current 37 A Equivalent Pulsed drain current 148 V Gate-source voltage 30 A Non-repetitive Avalanche current 37 mJ Maximum Avalanche Energy 251.9 kV/s Maximum Drain-Source dV/dt 20 kV/s Peak Diode Recovery dV/dt 5 Max. power dissipation 3.10 W Gate(G) 115 Operating and storage Tch +150 C -55 to +150 temperature range Tstg C Isolation voltage VISO *6 2 kVrms *1 L=309H, Vcc=48V *2 Tch < *3 IF< = BVDSS, Tch < = 150C = -ID, -di/dt=50A/s, Vcc < =150C *4 VDS < *5 VGS=-30V *6 t=60sec f=60Hz = 250V circuit schematic Drain(D) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Min. Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=250V VDS=200V VGS=30V ID=12.5A VGS=0V VGS=0V VDS=0V VGS=10V Typ. 250 3.0 Tch=25C Tch=125C ID=12.5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=72V ID=12.5A VGS=10V 8 RGS=10 V CC =72V ID=12A VGS=10V L=309H Tch=25C IF=25A VGS=0V Tch=25C IF=25A VGS=0V -di/dt=100A/s Tch=25C 10 75 16 2000 400 25 20 30 60 20 44 14 16 Max. 5.0 25 250 100 100 3000 600 38 30 45 90 30 66 21 24 37 1.10 0.45 1.5 1.65 Units V V A nA m S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/denshi/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.087 40.0 Units C/W C/W 1 2SK3651-01R FUJI POWER MOSFET Characteristics 125 Typical Output Characteristics Allowable Power Dissipation PD=f(Tc) ID=f(VDS):80s Pulse test,Tch=25C 100 20V 100 80 75 60 10V 8V ID [A] PD [W] 7.5V 7.0V 40 50 6.5V 25 20 0 0 6.0V VGS=5.5V 0 25 50 75 100 125 0 150 2 4 6 8 10 12 VDS [V] Tc [C] Typical Transfer Characteristic Typical Transconductance ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 100 gfs [S] ID[A] 10 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 0.25 270 VGS= 5.5V 6.0V 0.20 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=12.5A,VGS=10V 240 6.5V 7.0V 210 RDS(on) [ m ] 7.5V RDS(on) [ ] 100 ID [A] 8V 0.15 10V 20V 0.10 180 150 max. 120 90 typ. 60 0.05 30 0.00 0 0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3651-01R FUJI POWER MOSFET Typical Gate Charge Characteristics Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 7.0 VGS=f(Qg):ID=25A, Tch=25C 14 6.5 6.0 12 5.5 max. Vcc= 36V 72V 10 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 3.0 min. 96V 8 6 2.5 2.0 4 1.5 2 1.0 0.5 0 0.0 -50 -25 0 25 50 75 100 125 0 150 10 20 Tch [C] 10 1 30 40 50 60 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 Ciss 0 IF [A] 10 C [nF] 10 Coss -1 1 10 Crss -2 10 10 -1 0 10 10 1 10 0.1 0.00 2 0.25 0.50 0.75 1.25 1.50 1.75 2.00 VSD [V] VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=72V, VGS=10V, RG=10 10 1.00 700 3 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V IAS=15A 600 tf 500 2 td(off) IAS=22A EAS [mJ] t [ns] 10 tr td(on) 10 400 300 IAS=37A 1 200 100 10 0 0 10 -1 10 0 10 1 10 2 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 Avalanche Current I AV [A] 2SK3651-01R 10 2 10 1 10 0 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Single Pulse -1 10 -2 10 -8 10 -7 10 -6 10 10 -5 10 -4 10 -3 10 -2 tAV [sec] 1 10 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 0 Zth(ch-c) [C/W] 10 10 -1 10 -2 10 -3 10 -6 -5 10 10 -4 10 -3 -2 10 10 -1 10 0 t [sec] http://store.iiic.cc/ 4