ESMT
M24L48512DA
Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2008
Revision : 1.1 1/12
PSRAM 4-Mbit (512K x 8)
Pseudo Static RAM
Features
• Advanced low power architecture
• High speed: 55 ns, 60 ns and 70 ns
• Wide voltage range: 2.7V to 3.6V
• Typical active current: 1mA @ f = 1 MHz
• Low standby power
• Automatic power-down when deselected
Functional Description
The M24L48512DA is a high-performance CMOS pseudo
static RAM (PSRAM) organized as 512K words by 8 bits. Easy
memory expansion is provided by an active LOW Chip
Enable( 1CE ), an active HIGH Chip Enable (CE2), and active
LOW Output Enable ( OE ).This device has an automatic
power-down feature that reduces power consumption
dramatically when deselected. Writing to the device is
accomplished by taking Chip Enable One ( 1CE ) and Write
Enable ( WE )inputs LOW and Chip Enable Two (CE2) input
HIGH. Data on the eight I/O pins (I/O0 through I/O15) is then
written into the location specified on the address pins (A0
through A18).
Reading from the device is accomplished by asserting the
Chip Enable One ( 1CE ) and Output Enable ( OE ) inputs LOW
while forcing Write Enable ( WE ) HIGH and Chip Enable
Two(CE2) HIGH. Under these conditions, the contents of the
memory location specified by the address pins will appear on
the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected 1CE
HIGH or CE2 LOW), the outputs are disabled ( OE HIGH), or
during write operation ( 1CE LOW, CE2 HIGH, and WE
LOW).See the Truth Table for a complete description of read
and write modes.
Logic Block Diagram
ESMT
M24L48512DA
Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008
Revision: 1.1 2/12
Pin Configuration[1]
Product Portfolio
Power Dissipation
Operating, ICC (mA)
VCC Range(V)
f = 1 MHz f = fMAX
Standby, ISB2 (µA) Product
Min. Typ. Max.
Speed
(ns)
Typ.[2] Max. Typ.[2] Max. Typ.[2] Max.
55
60
14 22
M24L48512DA 2.7 3.0 3.6
70
1 5
8 15
17 40
Notes:
1. NC “no connect”—not connected internally to the die.
2.Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC (typ)
and TA = 25°C.
ESMT
M24L48512DA
Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008
Revision: 1.1 3/12
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–40°C to +85°C
Supply Voltage to Ground Potential ................−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[3, 4, 5] .......................................−0.4V to 3.7V
DC Input Voltage[3, 4, 5] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
Range Ambient Temperature (TA) VCC
Extended −25°C to +85°C 2.7V to 3.6V
Industrial −40°C to +85°C 2.7V to 3.6V
Electrical Characteristics (Over the Operating Range)
-55, 60, 70
Parameter Description Test Conditions Min. Typ.[2] Max.
Unit
VCC Supply Voltage 2.7 3.0 3.6 V
VOH Output HIGH
Voltage IOH = −0.1 mA VCC – 0.4 V
VOL Output LOW
Voltage IOL = 0.1 mA 0.4 V
VIH Input HIGH
Voltage 0.8 * VCC V
CC + 0.4 V
VIL Input LOW
Voltage -0.4 0.4 V
IIX Input Leakage
Current GND ≤ V
IN ≤ Vcc -1 +1 µA
IOZ Output Leakage
Current
GND ≤ V
OUT ≤ Vcc, Output
Disabled -1 +1 µA
f = fMAX = 1/tRC
14 for 55ns speed
14 for 60 ns speed
8 for 70 ns speed
22 for 55 ns speed
22 for 60 ns speed
15 for 70 ns speed
ICC VCC Operating
Supply Current f = 1 MHz
VCC = 3.6V,
IOUT = 0 mA,
CMOS level 1 for all speed 5 for all speeds
mA
ISB1
Automatic 1CE
Power-down
Current —CMOS
Inputs
1CE ≥ V
CC − 0.2V, CE2 ≤
0.2V, VIN ≥ V
CC − 0.2V, VIN ≤
0.2V, f = fMAX(Address and Data
Only),
f = 0
150 250 µA
ISB2
Automatic 1CE
Power-down
Current —CMOS
Inputs
1CE ≥ V
CC − 0.2V, CE2 ≤
0.2V, VIN ≥ V
CC − 0.2V or VIN
≤ 0.2V, f = 0, VCC = 3.6V
17 40 µA
Capacitance[6]
Parameter Description Test Conditions Max. Unit
CIN Input Capacitance 8 pF
COUT Output Capacitance
TA = 25°C, f = 1 MHz
VCC = VCC(typ) 8 pF
Notes:
3.VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns.
4.VIL(MIN) = –0.5V for pulse durations less than 20 ns.
5.Overshoot and undershoot specifications are characterized and are not 100% tested.
6.Tested initially and after design or process changes that may affect these parameters.
ESMT
M24L48512DA
Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008
Revision: 1.1 4/12
Thermal Resistance[6]
Parameter Description Test Conditions VFBGA Unit
θJA Thermal Resistance (Junction to Ambient) 55 °C/W
θJC Thermal Resistance (Junction to Case)
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51. 17 °C/W
AC Test Loads and Waveforms
Parameters 3.0V VCC Unit
R1 22000 Ω
R2 22000 Ω
RTH 11000 Ω
VTH 1.50 V
Switching Characteristics (Over the Operating Range)[7]
–55 –60 –70
Parameter Description Min. Max. Min. Max. Min. Max. Unit
Read Cycle
tRC Read Cycle Time 55[11] 60 70 ns
tAA Address to Data Valid 55 60 70 ns
tOHA Data Hold from Address Change 5 8 10 ns
tACE 1CE LOW and CE2 HIGH to Data Valid 55 60 70
ns
tDOE OE LOW to Data Valid 25 25 35
ns
tLZOE OE LOW to Low Z[8, 9] 5 5 5
ns
tHZOE OE HIGH to High Z[8, 9] 25 25 25
ns
tLZCE 1CE LOW and CE2 HIGH to Low Z[8,
9] 2 2 5
ns
tHZCE 1CE HIGH and CE2 LOW to High Z[8,
9] 25 25 25
ns
tSK [11] Address Skew 0 5 10 ns
Write Cycle[10]
tWC Write Cycle Time 55 60 70 ns
tSCE 1CE LOW and CE2 HIGH to Write End 45 45 60 ns
tAW Address Set-up to Write End 45 45 55 ns
tHA Address Hold from Write End 0 0 0 ns
Notes:
7. Test conditions assume signal transition time of 1 V/ns or higher, timing reference levels of VCC(typ)/2, input pulse levels of 0V to
VCC(typ), and output loading of the specified IOL/IOH and 30-pF load capacitance.
8. tHZOE, tHZCE, and tHZWE transitions are measured when the outputs enter a high-impedance state.
9. High-Z and Low-Z parameters are characterized and are not 100% tested.
10.The internal write time of the memory is defined by the overlap of WE , 1CE = VIL, and CE2 = VIH. All signals must be ACTIVE
to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing
should be referenced to the edge of the signal that terminates write.
11.To achieve 55-ns performance, the read access should be CE controlled. In this case tACE is the critical parameter and tSK is
satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable
within 10 ns after the start of the read cycle.
ESMT
M24L48512DA
Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008
Revision: 1.1 5/12
Switching Characteristics (Over the Operating Range)[7] (continued)
–55 –60 –70
Prameter Description Min. Max. Min. Max. Min. Max. Unit
tSA Address Set-up to Write Start 0 0 0 ns
tPWE WE Pulse Width 40 40 45 ns
tSD Data Set-up to Write End 25 25 25 ns
tHD Data Hold from Write End 0 0 0 ns
tHZWE WE LOW to High Z[8, 9] 25 25 25 ns
tLZWE WE HIGH to Low Z[8, 9] 5 5 5 ns
Switching Waveforms
Read Cycle 1 (Address Transition Controlled) [11, 12, 13]
Read Cycle 2 ( OE Controlled) [11, 13]
Notes:
12.Device is continuously selected. OE , CE = VIL.
13. WE is HIGH for Read Cycle.
ESMT
M24L48512DA
Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008
Revision: 1.1 6/12
Switching Waveforms (continued)
Write Cycle No. 1( WE Controlled) [9, 10, 14, 15, 16]
Switching Waveforms (continued)
Write Cycle 2 ( 1CE or CE2 Controlled) [9, 10, 14, 15, 16]
Notes:
14.Data I/O is high impedance if OE ≥ V
IH.
15.If Chip Enable goes INACTIVE simultaneously with WE =HIGH, the output remains in a high-impedance state.
16.During the DON’T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied.
ESMT
M24L48512DA
Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008
Revision: 1.1 7/12
Switching Waveforms (continued)
Write Cycle 3 ( WE Controlled, OE LOW)[15, 16]
ESMT
M24L48512DA
Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008
Revision: 1.1 8/12
Avoid Timing
ESMT Pseudo SRAM has a timing which is not supported at read operation, If your system has multiple invalid address signal
shorter than tRC during over 15μs at read operation shown as in Abnormal Timing, it requires a normal read timing at leat during
15μs shown as in Avoidable timing 1 or toggle 1CE to high (≧tRC) one time at least shown as in Avoidable Timing 2.
Abnormal Timing
Avoidable Timing 1
Avoidable Timing 2
CE1
15μs
≧
WE
Address
＜
t
RC
CE1
15μs
≧
WE
Address
t
≧
RC
CE1
15μs
≧
WE
Address
＜
t
RC
t
≧
RC
ESMT
M24L48512DA
Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008
Revision: 1.1 9/12
Truth Table[17]
1CE CE2 OE WE I/O0–I/O7 Mode Power
H X X X High Z Power-down Standby (ISB)
X L X X High Z Power-down Standby (ISB)
L H L H Data Out Read Active (ICC)
L H X L Data in Write Active (ICC)
L H H H High Z Selected, Outputs Disabled Active (ICC)
Ordering Information
Speed (ns) Ordering Code Package Type Operating Range
55 M24L48512DA-55BEG 36-Lead VFBGA (6 x 8 x 1 mm) (pb-free) Extended
60 M24L48512DA -60BEG 36-Lead VFBGA (6 x 8 x 1 mm) (pb-free) Extended
70 M24L48512DA -70BEG 36-Lead VFBGA (6 x 8 x 1 mm) (pb-free) Extended
55 M24L48512DA-55BIG 36-Lead VFBGA (6 x 8 x 1 mm) (pb-free) Industrial
60 M24L48512DA-60BIG 36-Lead VFBGA (6 x 8 x 1 mm) (pb-free) Industrial
70 M24L48512DA-70BIG 36-Lead VFBGA (6 x 8 x 1 mm) (pb-free) Industrial
Note:
17.H = Logic HIGH, L = Logic LOW, X = Don’t Care.
ESMT
M24L48512DA
Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008
Revision: 1.1 10/12
Package Diagram
36-Lead VFBGA (6 x 8 x 1 mm)
ESMT
M24L48512DA
Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008
Revision: 1.1 11/12
Revision History
Revision Date Description
1.0 2007.07.19 Original
1.1 2008.07.04
1. Move Revision History to the last
2. Modify voltage range 2.7V~3.3V to 2.7V~3.6V
3. Add Industrial grade
4. Add Avoid timing
ESMT
M24L48512DA
Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008
Revision: 1.1 12/12
Important Notice
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without the prior permission of ESMT.
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publication. ESMT assumes no responsibility for any error in this document, and reserves
the right to change the products or specification in this document without notice.
The information contained herein is presented only as a guide or examples for the
application of our products. No responsibility is assumed by ESMT for any infringement of
patents, copyrights, or other intellectual property rights of third parties which may result
from its use. No license, either express , implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of ESMT or others.
Any semiconductor devices may have inherently a certain rate of failure. To minimize risks
associated with customer's application, adequate design and operating safeguards against
injury, damage, or loss from such failure, should be provided by the customer when
making application designs.
ESMT's products are not authorized for use in critical applications such as, but not limited
to, life support devices or system, where failure or abnormal operation may directly affect
human lives or cause physical injury or property damage. If products described here are to
be used for such kinds of application, purchaser must do its own quality assurance testing
appropriate to such applications.
