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Is Now Part of
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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FLLD261
HIGH CONDUCTANCE LOW LEAKAGE DIODE P8A
PD . . . .350 mW @ TA = 25 Deg C
BV . . . .200 V (MIN) @ IR = 5 uA
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES
Storage Temperature -55 to +150 Degrees C
Operating Junction Temperature -55 to +150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C 350 mW
Derating Factor per Degree C 2.8 mW
VOLTAGES & CURRENTS
WIV Working Inverse Voltage 100 V
IO Average Rectified Current 250 mA
IF DC Forward Current 600 mA
if Recurrent Peak Forward Current 700 mA
if (surge) Peak Forward Surge Current
Pulse width = 1 second 1.0 A
Pulse width = 1 microsec 3.0 A
PACKAGE
TO-236AB (Low)
3
1 2
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
BVBreakdown Voltage 200 V IR = 5.0 uA
IRReverse Voltage Leakage Current 5.0 nA VR = 100 V
5.0 uA VR = 100 V TA = 150 Deg C
VFForward Voltage 1.40 VIF = 200 mA
CTDiode Capacitance 4.0 pF VR = 1.0 V f = 1.0 MHZ
TRR Reverse Recovery Time 400 ns IF = IR = 50 to 400 mA
IRR = 10% IRRL = 100 ohms
TFR Forward Recovery Time 10 ns IF = 10 mA
VFM Peak Forward Voltage 0.9 VIF = 10 mA
Typ Rise Time = 5 ns +/-20%
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
3
21
CONNECTION DIAGRAMS
SOT-23 (DIODE)
TO-236AB (LOW PROFILE)
11-March-1997
0.098 (2.489)
0.083 (2.108) 0.055 (1.397)
0.047 (1.194)
0.024 (0.810)
0.018 (0.457)
3 CHARACTERS MAX
LOW PROFILE 0.0040 (0.102)
(49) 0.0005 (0.013)
0.120 (3.048)
0.110 (2.794)
0.040 (1.016)
0.035 (0.889) 0.080 (2.032)
0.070 (1.778)
0.019 (0.483)
0.015 (0.381)
0.0059 (0.150)
0.0035 (0.089)
2
3
1
LOW PROFILE 0.041 (1.041)
(49) 0.030 (0.762)
0.035” TYPICAL
(0.889)
0.060” +/- 0.005”
(1.524 +/- 0.127)
0.120” MINIMUM
(3.048)
0.030” +/- 0.005”
(0.762 +/- 0.127)
RECOMMENDED SOLDER PADS
FOR
SOT-23
0.037” +/- 0.005”
(0.950 +/- 0.127 )
0.099” +/- 0.005”
(2.524 +/- 0.127 )
0.039” +/- 0.005”
(1.000 +/- 0.127)
RECOMMENDED SOLDER PADS
FOR
U.S., European & Japanese (SC-59)
SOT-23
0.031” +/- 0.005”
(0.800 +/- 0.127)
0.060” +/- 0.005”
(1.524 +/- 0.127)
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