IGBT Module PSII 3x10/06 IC25 = 19 A
Sixpack VCES = 600 V
VCE(sat)typ. = 1.9 V
Features
•NPT IGBT’s
- positive temperature coefficient of
saturation voltage
- fast switching
•FRED diodes
- fast reverse recovery
- low forward voltage
•Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
•UL registered, E 148688
Applications
•AC drives
•power supplies with power factor
correction
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power
cycling capability
•High power density
•Small and light weight
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 1
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Preliminary Data Sheet
Caution: These devices are
sensitive to electrostatic discharge.
Users should observe proper ESD
handling precautions.
PSII 3x10/06
IGBTs
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 600 V
VGES ± 20 V
IC25 TC = 25°C 19 A
IC80 TC = 80°C 14 A
ICM VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 20 A
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES
tSC VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
Ptot TC = 25°C 73 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25°C 1.9 2.4 V
TVJ = 125°C 2.2 V
VGE(th) IC = 0.35 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES;V
GE = 0 V; TVJ = 25°C 0.6 mA
TVJ = 125°C 2.7 mA
IGES VCE = 0 V; VGE = ± 20 V 100 nA
td(on) 35 ns
tr35 ns
td(off) 230 ns
tf30 ns
Eon 0.4 mJ
Eoff 0.3 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 600 pF
QGon VCE = 300 V; VGE = 15 V; IC = 10 A 39 nC
RthJC (per IGBT) 1.7 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 3.4 K/W
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
2-3
4/G
1/A
G4/N
6-7
1/H
N
5/A
A
H
K
5/H
8/N8/G
NTC
L
http://store.iiic.cc/