IGBT Module PSII 3x10/06 IC25 = 19 A
Sixpack VCES = 600 V
VCE(sat)typ. = 1.9 V
Features
•NPT IGBT’s
- positive temperature coefficient of
saturation voltage
- fast switching
•FRED diodes
- fast reverse recovery
- low forward voltage
•Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
•UL registered, E 148688
Applications
•AC drives
•power supplies with power factor
correction
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power
cycling capability
•High power density
•Small and light weight
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 1
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Preliminary Data Sheet
Caution: These devices are
sensitive to electrostatic discharge.
Users should observe proper ESD
handling precautions.
PSII 3x10/06
IGBTs
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 600 V
VGES ± 20 V
IC25 TC = 25°C 19 A
IC80 TC = 80°C 14 A
ICM VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 20 A
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES
tSC VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C 10 µs
(SCSOA) non-repetitive
Ptot TC = 25°C 73 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25°C 1.9 2.4 V
TVJ = 125°C 2.2 V
VGE(th) IC = 0.35 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES;V
GE = 0 V; TVJ = 25°C 0.6 mA
TVJ = 125°C 2.7 mA
IGES VCE = 0 V; VGE = ± 20 V 100 nA
td(on) 35 ns
tr35 ns
td(off) 230 ns
tf30 ns
Eon 0.4 mJ
Eoff 0.3 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 600 pF
QGon VCE = 300 V; VGE = 15 V; IC = 10 A 39 nC
RthJC (per IGBT) 1.7 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 3.4 K/W
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
2-3
4/G
1/A
G4/N
6-7
1/H
N
5/A
A
H
K
5/H
8/N8/G
NTC
L
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PSII 3x10/06
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Diodes
Symbol Conditions Maximum Ratings
IF25 TC = 25°C 21 A
IF80 TC = 80°C 14 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 10 A; TVJ = 25°C 1.9 2.7 V
TVJ = 150°C 1.4 V
IRM IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C 11 A
trr VR = 300 V; VGE = 0 V 80 ns
RthJC 3.5 K/W
RthJH with heatsink compound (0.42 K/m.K; 50 µm) 7.0 K/W
Component
Symbol Conditions Maximum Ratings
TVJ -40...+150 °C
Tstg -40...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s 3600 V~
MdMounting torque (M4) 1.5 - 1.8 Nm
14 - 16 lb.in.
aMax. allowable acceleration 50 m/s2
Symbol Conditions Characteristic Values
min. typ. max.
dSCreepage distance on surface (Pin to heatsink) 11.2 mm
dAStrike distance in air (Pin to heatsink) 11.2 mm
Weight 18 g
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
A
1/A
1/H
5/A
5/H
H
K
6/7
2/3
G
4/G
8/G
4/N
8/N
N
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R25 T= 25°C 455 470 485 kΩ
B25/50 3474 K
http://store.iiic.cc/
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
PSII 3x10/06
IGBT
http://store.iiic.cc/
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
PSII 3x10/06
IGBT
Transient thermal resistance junction to heatsink
(Z
thJH
is measured using 50 µm
thermal grease)
IGBT
ZthJH [K/W]
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t (s)
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
http://store.iiic.cc/
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
PSII 3x10/06
Diode
Transient thermal resistance junction to heatsink
200 600 10000 400 800
70
80
90
100
110
120
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C
-diF/dt
0 200 400 600 800 1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
VFR
diF/dt
V
200 600 10000 400 800
0
10
20
30
40
100 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0 0.5 1.0 1.5 2.0 2.5
0
5
10
15
20
25
30
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/µs
A
V
nC
A/µsA/µs
trr
ns
tfr
A/µs
µs
IF= 20A
IF= 10A
IF= 5A
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 10A
Peak reverse current IRM
versus -diF/dt
Reverse recovery charge Qr
versus -diF/dt
Forward current IF versus VF
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
IF= 20A
IF= 10A
IF= 5A
Qr
IRM
Dynamic parameters Qr, IRM
versus TVJ
Recovery time trr versus -diF/dt Peak forward voltage VFR and tfr
versus diF/dt
IF= 20A
IF= 10A
IF= 5A
tfr
VFR
TVJ=150°C
TVJ=100°C
TVJ= 25°C
8-06A
(Z
thJH
is measured using 50 µm
thermal grease)
Fred
ZthJH[K/W]
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t(s)
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
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