TM ECO-PAC 1 IGBT Module PSII 3x10/06 IC25 = 19 A VCES = 600 V VCE(sat)typ. = 1.9 V Sixpack Preliminary Data Sheet L NTC 2-3 6-7 K 1/A 5/A H A 1/H 5/H G 4/N N 4/G 8/G 8/N IGBTs Symbol Conditions VCES TVJ = 25C to 150C VGES 600 V 20 V 19 14 A A 20 VCES A IC25 IC80 TC = 25C TC = 80C ICM VCEK VGE = 15 V; RG = 82 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H tSC (SCSOA) VCE = 720 V; VGE = 15 V; RG = 82 ; TVJ = 125C non-repetitive 10 s Ptot TC = 25C 73 W Symbol Conditions VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25C TVJ = 125C VGE(th) IC = 0.35 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = 20 V td(on) tr td(off) tf Eon Eoff PSII 3x10/06 Maximum Ratings Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.9 2.2 4.5 VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300 V; VGE = 15 V; IC = 10 A RthJC RthJH (per IGBT) V V 6.5 V 0.6 mA mA 2.7 100 Inductive load, TVJ = 125C VCE = 300 V; IC = 10 A VGE = 15 V; RG = 82 Cies QGon 2.4 with heatsink compound (0.42 K/m.K; 50 m) nA 35 35 230 30 0.4 0.3 ns ns ns ns mJ mJ 600 39 pF nC 3.4 1.7 K/W K/W Features * * * * NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching FRED diodes - fast reverse recovery - low forward voltage Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate UL registered, E 148688 Applications * * AC drives power supplies with power factor correction Advantages * * * * * Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ PSII 3x10/06 Package style and outline Diodes Dimensions in mm (1mm = 0.0394") Symbol Conditions IF25 IF80 TC = 25C TC = 80C Maximum Ratings 21 14 A A N H Symbol Conditions Characteristic Values min. typ. max. 5/H 5/A K 6/7 IF = 10 A; TVJ = 25C TVJ = 150C 1.9 1.4 2.7 V V IRM trr IF = 10 A; diF/dt = -400 A/s; TVJ = 125C VR = 300 V; VGE = 0 V 11 80 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 m) 7.0 3.5 K/W K/W 1/A A 8/G 4/N 1/H VF 8/N 2/3 4/G G Data according to IEC 60747 and refer to a single diode unless otherwise stated. Component Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 C C 3600 V~ 1.5 - 1.8 14 - 16 50 Nm lb.in. m/s 2 VISOL IISOL 1 mA; 50/60 Hz; t = 1 s Md Mounting torque (M4) a Max. allowable acceleration Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 18 g Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T= 25C 455 470 3474 485 k K 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ PSII 3x10/06 IGBT POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ PSII 3x10/06 IGBT Transient thermal resistance junction to heatsink 10 1 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 (ZthJH is measured using 50 m thermal grease) IGBT ZthJH [K/W] 0.1 0.01 0.001 100 t (s) 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ PSII 3x10/06 Diode 30 1.4 T = 100C nC VJ V = 300V 1.2 R A 25 IF TVJ=150C TVJ=100C TVJ= 25C 20 15 1.0 Qr 40 TVJ= 100C A VR = 300V IRM IF= 20A IF= 10A IF= 5A 0.8 30 IF= 20A IF= 10A IF= 5A 20 0.6 10 0.4 5 10 0.2 0 0.0 0.5 1.0 0.0 100 2.0 V 2.5 1.5 VF Forward current IF versus VF 0 A/s 1000 -diF/dt 0 Reverse recovery charge Qr versus -diF/dt 120 2.0 trr 1.5 Kf 1.0 0.6 5 0.3 TVJ= 100C IF = 10A 70 40 80 120 C 160 0 200 400 TVJ 600 0 800 1000 A/s 0 -diF/dt Dynamic parameters Qr, IRM versus TVJ 0.9 10 Qr 0 s VFR tfr tfr IF= 20A IF= 10A IF= 5A 80 0.5 1.2 V VFR 15 90 IRM 600 A/s 800 1000 -diF/dt 20 110 100 400 Peak reverse current IRM versus -diF/dt TVJ= 100C VR = 300V ns 0.0 200 Recovery time trr versus -diF/dt 200 400 8-06A 0.0 600 A/s 800 1000 diF/dt Peak forward voltage VFR and tfr versus diF/dt 10 (ZthJH is measured using 50 m thermal grease) 1 Fred ZthJH[K/W] D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 t(s) 0.1 1 10 100 Transient thermal resistance junction to heatsink 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/