OM7628/BGA7027/9/5,598 - NXP Semiconductors

1. Product profile

1.1 General description

The BGA7027 MMIC is a one-stage amplifier, offered in a low-cost surface-mount

package. It delivers 28 dBm output power at 1 dB gain compression and a superior

performance up to 2700 MHz.

1.2 Features and benefits

400 MHz to 2700 MHz frequency operating range

11 dB small signal gain at 2 GHz

28 dBm output powe r at 1 dB ga in com pr es sion

Integrated active biasing

External matching allows broad application optimization of the electrical performance

5 V single supply operat i on

ESD protection at all pins

1.3 Applications

1.4 Quick reference data

[1] Operation outside this range is possible but not guaranteed.

[2] PL = 17 dBm per tone; spacing = 1 MHz.

BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

Rev. 2 — 26 November 2010 Product data sheet

Broadband CPE/MoCA Industrial applications

WLAN/ISM/RFID E-metering

Wireless infrastructure (base station,

repeater, backhaul systems)

Satellite Master Antenna TV (SMATV)

Table 1. Quick reference data

Input and output impedances matched to 50



. Typical values at: VCC =5V; T

case =25



C; unless

otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

f frequency [1] 400 - 2700 MHz

Gppower gain f = 2140 MHz 9.0 11.0 13.0 dB

PL(1dB) output power at 1 dB gain compression f = 2140 MHz 26 28 - dBm

IP3Ooutput third-order intercept point f = 2140 MHz [2] 40.0 42.5 - dBm

Product data sheet Rev. 2 — 26 November 2010 2 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

2. Pinning information

[1] This pin is DC-coupled and requires an external DC-blocking capacitor.

[2] The center metal base of the SOT89 also functions as heatsink for the power amplifier.

3. Ordering information

4. Functional diagram

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

CC(RF) [1]

2GND [2]

3RF_IN [1]

321

sym130

Table 3. Ordering information

Type number Package

Name Description Version

BGA7027 - plastic surface-mounted package; exposed die pad for good

heat transfer; 3 leads SOT89

Fig 1. Functional diagram

BANDGAP

BIAS

ENABLE V/I

CONVERTER

VCC(RF)

GND

RF_IN

014aab020

Product data sheet Rev. 2 — 26 November 2010 3 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

5. Limiting values

[1] Withstands switching between zero and maximum Pi(RF)

6. Thermal characteristics

7. Static characteristics

8. Dynamic characteristics

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage - 5.7 V

Pi(RF) RF input power f = 2140 MHz; switched [1] -28dBm

Tcase case temperature 40 +85 C

Tjjunction temperature - 150 C

VESD electrostatic discharge

voltage Human Body Model (HBM);

according to

JEDEC standard 22-A114E

- 2000 V

Charged Device Model (CDM);

according to

JEDEC standard 22-C101B

- 500 V

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-c) thermal resistance from junction to case Tcase =85C; VCC =5V;

ICC =165mA 38 K/W

Table 6. Static characteristics

Input and output impedances matched to 50



. Typical values at Tcase =25



unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage - 5.0 - V

ICC supply current VCC = 5.0 V 140 165 190 mA

Table 7. Dynamic characteristics

Input and output impedances matched to 50



. Typical values at VCC =5V; T

case =25



C, NXP

application circuit; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

f frequency [1] 400 - 2700 MHz

Gppower gain f = 940 MHz [2] -19.0- dB

f = 1960 MHz [2] -11.5- dB

f = 2140 MHz [2] 9.0 11.0 13.0 dB

Product data sheet Rev. 2 — 26 November 2010 4 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

[1] Operation outside this range is possible but not guaranteed.

[2] Defined at Pi(RF) = 40 dBm; small signal conditions.

[3] PL= 17 dBm per tone; spacing = 1 MHz.

9. Scattering parameters

PL(1dB) output power at 1 dB gain

compression f = 940 MHz - 29.0 - dBm

f = 1960 MHz - 27.5 - dBm

f = 2140 MHz 26.0 28.0 - dBm

IP3Ooutput third-order intercept point f = 940 MHz [3] -41.5- dBm

f = 1960 MHz [3] -43.0- dBm

f = 2140 MHz [3] 40.0 42.5 - dBm

NF noise figure f = 940 MHz - 2. 6 - dB

f = 1960 MHz - 3.8 - dB

f = 2140 MHz - 3.9 - dB

RLin input return loss f = 940 MHz [2] -16 - dB

f = 1960 MHz [2] -8- dB

f = 2140 MHz [2] -8- dB

RLout output return loss f = 940 MHz [2] -11 - dB

f = 1960 MHz [2] -13 - dB

f = 2140 MHz [2] -15 - dB

Table 7. Dynamic characteristics …continued

Input and output impedances matched to 50



. Typical values at VCC =5V; T

case =25



C, NXP

application circuit; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Table 8. Scattering parameters, MMIC only

VCC =5V; I

CC =165mA; T

case =25



f (MHz) s11 s21 s12 s22

Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree)

400 0.92 178 8.03 93 0.01 49 0.76 176

500 0.92 176 6.55 89 0.01 53 0.75 178

600 0.92 173 5.55 85 0.02 55 0.75 179

700 0.92 171 4.80 82 0.02 56 0.75 177

800 0.92 168 4.24 79 0.02 56 0.75 175

900 0.92 165 3.80 76 0.02 56 0.75 173

1000 0.92 162 3.46 72 0.03 55 0.76 170

1100 0.92 160 3.14 69 0.03 54 0.76 167

1200 0.92 157 2.85 66 0.03 53 0.76 165

1300 0.92 154 2.61 63 0.03 52 0.76 163

1400 0.93 152 2.39 61 0.03 50 0.77 161

1500 0.93 150 2.20 58 0.03 49 0.78 160

1600 0.93 149 2.03 56 0.04 48 0.78 159

1700 0.93 148 1.88 54 0.04 47 0.79 157

Product data sheet Rev. 2 — 26 November 2010 5 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

10. Reliability information

11. Moisture sensitivity

1800 0.94 147 1.75 63 0.04 47 0.80 157

1900 0.94 146 1.64 51 0.04 46 0.80 157

2000 0.94 146 1.53 50 0.04 46 0.80 157

2100 0.93 146 1.45 49 0.04 46 0.81 157

2200 0.93 147 1.39 49 0.05 46 0.81 157

2300 0.93 147 1.33 48 0.05 45 0.81 158

2400 0.92 147 1.29 48 0.05 45 0.80 159

2500 0.91 147 1.26 47 0.05 45 0.80 160

2600 0.91 148 1.24 46 0.06 45 0.80 160

2700 0.89 147 1.23 45 0.06 44 0.79 161

Table 8. Scattering parameters, MMIC only …continued

VCC =5V; I

CC =165mA; T

case =25



f (MHz) s11 s21 s12 s22

Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree) Magnitude

(ratio) Angle

(degree)

Table 9. Reliability

Life test Conditions Intrinsic failure rate

HTOL according to JESD85; confidence level 60 %; Tj=55C;

activation energy = 0.7 eV; acceleration factor determined

according to the Arrhenius equation

Table 10. Moisture sensitivity level

Test methodology Class

JESD-22-A113 1

Product data sheet Rev. 2 — 26 November 2010 6 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

12. Application information

12.1 920 MHz to 960 MHz

See Table 11 for a list of components.

PCB board specification:

Rogers RO4003C; Height = 0.508 mm; r = 3.38; Copper thickness = 35 m.

Fig 2. 920 MHz to 960 MHz application schematic

C4 C5

C9 C7

C10

MSL1 MSL2 MSL3 MSL9MSL6 MSL7 MSL8

RF_IN

BGA7027

50 Ω50 Ω

VCC

001aam066

MSL5

VCC(RF)

MSL4

C2 C3

(1) Tcase = 25 C.

(2) Tcase = 85 C.

(3) Tcase = 40 C.

(1) Tcase = 25 C.

(2) Tcase = 85 C.

(3) Tcase = 40 C.

Fig 3. Output power at 1 dB gain compression as a

function of frequency Fig 4. Power gain as a function of frequency

001aam130

f (GHz)

0.92 0.960.950.940.93

PL(1dB)

(dBm)

(1)

(2)

(3)

001aam131

f (GHz)

0.92 0.93 0.960.950.94

(dB)

(1)

(2)

(3)

Product data sheet Rev. 2 — 26 November 2010 7 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

Tcase = 25 C.

(1) RLin.

(2) RLout.

(3) ISL.

PL = 17 dBm; tone spacing = 1 MHz

(1) Tcase = 25 C.

(2) Tcase = 85 C.

(3) Tcase = 40 C.

Fig 5. Input return loss, output return loss and

isolation as a function of frequency Fig 6. Output third-order intercept point as a function

of frequency

001aam132

f (GHz)

0.92 0.960.950.940.93

−20

−10

−30

(1)

(2)

(3)

RLin, RLout, ISL

(dB)

001aam133

f (GHz)

0.92 0.960.950.940.93

IP3O

(dBm)

(1)

(2)

(3)

2-carrier W-CDMA; each carrier according to 3GPP test

model 1; 64 DPCH; PAR for composite signal = 7.5 dB;

5 MHz carrier spacing.

(1) f = 920 MHz; ACPR measured at f  5 MHz

(2) f = 960 MHz; ACPR measured at f  5 MHz

(3) f = 920 MHz; ACPR measured at f  10 MHz

(4) f = 960 MHz; ACPR measured at f  10 MHz

2-carrier W-CDMA; each carrier according to 3GPP test

model 1; 64 DPCH; PAR for composite signal = 9 dB;

10 MHz carrier spacing.

(1) f = 920 MHz; ACPR measured at f  5 MHz

(2) f = 960 MHz; ACPR measured at f  5 MHz

(3) f = 920 MHz; ACPR measured at f  10 MHz

(4) f = 960 MHz; ACPR measured at f  10 MHz

Fig 7. Adjacent channel power ratio as a function of

average output power Fig 8. Adjacent cha nn el power ratio as a function of

average ou tput power

PL(AV) (dBm)

0252010 155

001aan073

−40

−60

−20

ACPR

(dBc)

−80

(1)

(2)

(3)

(4)

PL(AV) (dBm)

0252010 155

001aan074

−40

−60

−20

ACPR

(dBc)

−80

(1)

(2)

(3)

(4)

Product data sheet Rev. 2 — 26 November 2010 8 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

f = 940 MHz; tone spacing = 1 MHz.

(1) Upper sideband

(2) Lower sideband

Fig 9. Output third-order intercept point as a function of output power per tone

PL (dBm) per tone

10 181612 14

001aan075

IP3O

(dBm)

(1)

(2)

See Table 11 for a list of components.

Fig 10. 920 MHz to 960 MHz application reference board

GND

VCC

GND

C3C2

C10 L1

MSL9

MSL7

MSL6 MSL8

MSL1 MSL2 MSL3 MSL4 MSL5

RF in

RF out

001aam068

Product data sheet Rev. 2 — 26 November 2010 9 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

[1] Low Q inductor.

[2] MSL1 to MSL9 dimensions are specified as Width (W), Spacing (S) and Length (L).

Table 11. List of components of 920 MHz to 960 MHz

See Figure 2 and Figure 10 for component layout.

Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35



Component Description Value Function Remarks

C1, C6 capacitor 68 pF DC blocking Murata, GRM1885C1H680JA01D

C2 capacitor 5.6 pF input match Murata, GRM1885C1H5R6CZ01D

C3 capacitor 2.7 pF input match Murata, GRM1885C1H2R7CZ01D

C4 capacitor 1.0 pF output match Murata, GRM1885C1H1R0CZ01D

C5 capacitor 3.9 pF output match Murata, GRM1885C1H3R9CZ01D

C7 capacitor 68 pF RF decoupling Murata, GRM1885C1H680JA01D

C8 capacitor 100 nF LF decoupling AVX, 0603YC104KAT2A

C9 capacitor 10 F LF decoupling AVX, 1206ZG106ZAT2A

C10 capacitor 68 nF IMD3 suppression Murata, GRM1888R71H683KA93D

J1, J2 RF connector SMA Emerson Network Power,

142-0701-841

J3 DC connector 6 pins MOLEX

L1 inductor 22 nH DC Feed Tyco Electronics, 36501J022JTDG

L2[1] inductor 33 nH IMD3 suppression Tyco Electronics, 36501J033JTDG

MSL1[2] micro stripline 1.14 mm  0.8 mm  10.95 mm input match

MSL2[2] micro stripline 1.14 mm  0.8 mm  4.3 mm input match

MSL3[2] micro stripline 1.14 mm  0.8 mm  1.7 mm input match

MSL4[2] micro stripline 1.14 mm  0.8 mm  4.8 mm input match

MSL5[2] micro stripline 1.14 mm  0.8 mm  2.7 mm output match

MSL6[2] micro stripline 1.14 mm  0.8 mm  3.2 mm output match

MSL7[2] micro stripline 1.14 mm  0.8 mm  4.0 mm output match

MSL8[2] micro stripline 1.14 mm  0.8 mm  1.6 mm output match

MSL9[2] micro stripline 1.14 mm  0.8 mm  10.95 mm output match

R1 resistor 0 Multicomp, MC 0.063W 0603 0R

Product data sheet Rev. 2 — 26 November 2010 10 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

12.2 1930 MHz to 1990 MHz

See Table 12 for a list of components.

PCB board specification:

Rogers RO4003C; Height = 0.508 mm; r = 3.38; Copper thickness = 35 m.

Fig 11. 1930 MHz to 1990 MHz application schematic

C7 C5

MSL1 MSL2 MSL3 MSL7MSL5 MSL6

RF_IN

BGA7027

50 Ω50 Ω

VCC

001aam069

MSL4

VCC(RF)

(1) Tcase = 25 C.

(2) Tcase = 85 C.

(3) Tcase = 40 C.

(1) Tcase = 25 C.

(2) Tcase = 85 C.

(3) Tcase = 40 C.

Fig 12. O u t pu t power at 1 dB gain compr e ss ion as a

function of frequency Fig 13. Power gain as a function of frequency

001aam134

f (GHz)

1.93 1.991.971.95

PL(1dB)

(dBm)

(1)

(2)

(3)

001aam135

f (GHz)

1.93 1.991.971.95

(dB)

(1)

(2)

(3)

Product data sheet Rev. 2 — 26 November 2010 11 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

Tcase = 25 C.

(1) RLin.

(2) RLout.

(3) ISL.

PL = 17 dBm; tone spacing = 1 MHz

(1) Tcase = 25 C.

(2) Tcase = 85 C.

(3) Tcase = 40 C.

Fig 14. Input return loss, ou tpu t return loss and

isolation as a function of frequency Fig 15. Output third-order intercept point as a function

of frequency

001aam136

f (GHz)

1.93 1.991.971.95

−20

−10

−30

(1)

(2)

(3)

RLin, RLout, ISL

(dB)

001aam137

f (GHz)

1.93 1.991.971.95

IP3O

(dBm)

(1)

(2)

(3)

See Table 12 for a list of components.

Fig 16. 1930 MHz to 1990 MHz application refere nc e bo ard

GND

VCC

GND

C8 L1

MSL7MSL6

MSL5

MSL1 MSL2 MSL3 MSL4

RF in

RF out

001aam072

Product data sheet Rev. 2 — 26 November 2010 12 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

[1] Low Q inductor.

[2] MSL1 to MSL7 dimensions are specified as Width (W), Spacing (S) and Length (L).

12.3 2110 MHz to 2170 MHz

Table 12. List of components of 1930 MHz to 1990 MHz

See Figure 11 and Figure 16 for component layout.

Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating t hickness = 35



Component Description Value Function Remarks

C1, C4 capacitor 15 pF DC blocking Murata, GRM1885C1H150JA01D

C2 capa ci to r 2.4 pF input ma tch Murata, GRM1885 C 1H 2 R 4C Z01D

C3 capacitor 2.0 pF output match Mura ta, GRM1885C1H2R0 CZ01D

C5 capacitor 15 pF RF decoupling Murata, GRM1885C1H150JA01D

C6 capacitor 100 nF LF decoupling AVX, 0603YC104KAT2A

C7 capacitor 10 F LF decoupling AVX, 1206ZG106ZAT2A

C8 capacitor 68 nF IMD3 suppression Murata, GRM1888R71H683KA93D

J1, J2 RF connector SMA Emerson Network Power,

142-0701-841

J3 DC connector 6 pins MOLEX

L1 inductor 22 nH DC Feed Tyco Electronics, 36501J022JTDG

L2[1] inductor 33 nH IMD3 suppression Tyco Electronics, 36501J033JTDG

MSL1[2] micro stripline 1.14 mm  0.8 mm  10.95 mm input match

MSL2[2] micro stripline 1.14 mm  0.8 mm  10.6 mm input match

MSL3[2] micro stripline 1.14 mm  0.8 mm  1.0 mm input match

MSL4[2] micro stripline 1.14 mm  0.8 mm  2.7 mm output match

MSL5[2] micro stripline 1.14 mm  0.8 mm  2.0 mm output match

MSL6[2] micro stripline 1.14 mm  0.8 mm  6.8 mm output match

MSL7[2] micro stripline 1.14 mm  0.8 mm  10.95 mm output match

R1 resistor 0 Multicomp. MC 0.063W 0603 0R

See Table 13 for a list of components.

PCB board specification:

Rogers RO4003C; Height = 0.508 mm; r = 3.38; Copper thickness = 35 m.

Fig 17. 2110 MHz to 2170 MHz application schematic

C7 C5

MSL1 MSL2 MSL5MSL4

RF_IN

BGA7027

50 Ω50 Ω

VCC

001aam070

MSL3

VCC(RF)

Product data sheet Rev. 2 — 26 November 2010 13 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

(1) Tcase = 25 C.

(2) Tcase = 85 C.

(3) Tcase = 40 C.

(1) Tcase = 25 C.

(2) Tcase = 85 C.

(3) Tcase = 40 C.

Fig 18. Output power at 1 dB gain compressi on as a

function of frequency Fig 19. Power gain as a function of frequency

001aam138

f (GHz)

2.11 2.172.152.13

PL(1dB)

(dBm)

(1)

(2)

(3)

001aam139

f (GHz)

2.11 2.172.152.13

(dB)

(1)

(2)

(3)

Tcase = 25 C.

(1) RLin.

(2) RLout.

(3) ISL.

PL = 17 dBm; tone spacing = 1 MHz

(1) Tcase = 25 C.

(2) Tcase = 85 C.

(3) Tcase = 40 C.

Fig 20. Input return loss, output return loss and

isolation as a function of frequency Fig 21. Output third-order intercept point as a function

of frequency

001aam140

f (GHz)

2.11 2.172.152.13

−20

−10

−30

(1)

(2)

(3)

RLin, RLout, ISL

(dB)

001aam141

f (GHz)

2.11 2.172.152.13

IP3O

(dBm)

(1)

(2)

(3)

Product data sheet Rev. 2 — 26 November 2010 14 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

2-carrier W-CDMA; each carrier according to 3GPP test

model 1; 64 DPCH; PAR for composite signal = 7.5 dB;

5 MHz carrier spacing.

(1) f = 2110 MHz; ACPR measured at f  5 MHz

(2) f = 2170 MHz; ACPR measured at f  5 MHz

(3) f = 2110 MHz; ACPR measured at f  10 MHz

(4) f = 2170 MHz; ACPR measured at f  10 MHz

2-carrier W-CDMA; each carrier according to 3GPP test

model 1; 64 DPCH; PAR for composite signal = 9 dB;

10 MHz carrier spacing.

(1) f = 2110 MHz; ACPR measured at f  5 MHz

(2) f = 2170 MHz; ACPR measured at f  5 MHz

(3) f = 2110 MHz; ACPR measured at f  10 MHz

(4) f = 2170 MHz; ACPR measured at f  10 MHz

Fig 22. Adjacent channe l powe r ratio a s a fun ct ion of

average output power Fig 23. Ad jacen t channel power ratio as a function of

average ou tput power

PL(AV) (dBm)

0252010 155

001aan076

−40

−60

−20

ACPR

(dBc)

−80

(1)

(2)

(3)

(4)

PL(AV) (dBm)

0252010 155

001aan077

−40

−60

−20

ACPR

(dBc)

−80

(1)

(2)

(3)

(4)

f = 2140 MHz; tone spacing = 1 MHz.

(1) Upper sideband

(2) Lower sideband

Fig 24. Output third-order intercept point as a function of outp ut power per tone

PL (dBm) per tone

10 181612 14

001aan078

IP3O

(dBm)

(1)

(2)

Product data sheet Rev. 2 — 26 November 2010 15 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

See Table 13 for a list of components.

Fig 25. 2110 MHz to 2170 MHz application reference board

GND

VCC

GND

C1 L1

MSL5

MSL4

MSL1 MSL2

MSL3

RF in

RF out

001aam071

Product data sheet Rev. 2 — 26 November 2010 16 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

[1] Low Q inductor.

[2] MSL1 to MSL5 dimensions are specified as Width (W), Spacing (S) and Length (L).

12.4 PCB stack

Table 13. List of components of 2110 MHz to 2170 MHz

See Figure 17 and Figure 25 for component layout.

Printed-Circuit Board (PCB): Rogers RO4003C stack; height = 0.508 mm; copper plating thickness = 35



Component Description Value Function Remarks

C1, C4 capacitor 15 pF DC blocking Murata, GRM1885C1H150JA01D

C2 capacitor 2.2 pF input match Murata, GRM1885C1H2R2CZ01D

C3 capacitor 2.0 pF output match Murata, GRM1885C1H1R0CZ01D

C5 capacitor 15 pF RF decoupling Murata, GRM1885C1H150JA01D

C6 capacitor 100 nF LF decoupling AVX, 0603YC104KAT2A

C7 capacitor 10 F LF decoupling AVX, 1206ZG106ZAT2A

C8 capacitor 68 nF IMD3 suppression Murata, GRM1888R71H683KA92D

J1, J2 RF connector SMA Emerson Network Power,

142-0701-841

J3 DC connector 6 pins MOLEX

L1 inductor 22 nH DC Feed Tyco Electronics, 36501J022JTDG

L2[1] inductor 33 nH IMD3 suppression Tyco Electronics, 36501J033JTDG

MSL1[2] micro stripline 1.14 mm  0.8 mm  10.95 mm input match

MSL2[2] micro stripline 1.14 mm  0.8 mm  11.3 mm input match

MSL3[2] micro stripline 1.14 mm  0.8 mm  3.2 mm output match

MSL4[2] micro stripline 1.14 mm  0.8 mm  8.0 mm output match

MSL5[2] micro stripline 1.14 mm  0.8 mm  10.95 mm output match

R1 resistor 0 Multicomp, MC 0.063W 0603 0R

RO4003C dielectric constant r = 3.38.

Fig 26. PCB stack

through via

RF & analog ground

RF & analog routing

analog routing

RF & analog ground

35 μm (1 oz.) copper + 0.3 μm

gold plating

RO4003C, 0.51 mm (20 mil)

35 μm (1 oz.) copper

(1)

0.2 mm (8 mil)

FR4, 0.15 mm (6 mil)

35 μm (1 oz.) copper

014aab045

Product data sheet Rev. 2 — 26 November 2010 17 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

13. Package outline

Fig 27. Package outline SOT89

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 06-03-16

06-08-29

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

Product data sheet Rev. 2 — 26 November 2010 18 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

14. Abbreviations

15. Revision history

Table 14. Abbreviations

Acronym Description

3GPP 3rd Generation Partnership Project

CPE Customer-Prem is es Eq ui p me nt

DPCH Dedicated Physical CHannel

ESD ElectroStatic Discharge

HTOL High Temperature Operating Life

IMD3 3rd-order InterModulation Distortion

ISM Industrial, Scientific and Medical

MMIC Monolithic Microwav e Integrated Circuit

MoCA Multimedia over Coax Alliance

RFID Radio Frequency IDentification

W-CDMA Wideband Code Division Multiple Access

W-LAN Wireless Local Area Network

Table 15. Revision history

Document ID Release date Dat a sheet status Change notice Supersedes

BGA7027 v.2 20101126 Product data sheet - BGA7027 v.1

Modifications: •The status of this data sheet has been changed to Product data sheet

•Table 1 on page 1: some values have been changed

•Table 1 on page 1: some values have been added

•Table 4 on page 3: data for Pi(RF) have been added

•Table 5 on page 3: conditions have been changed

•Table 7 on page 3: some values have been changed

•Table 7 on page 3: some values have been added

•Figure 7 on page 7: figure has been added

•Figure 8 on page 7: figure has been added

•Figure 9 on page 8: figure has been added

•Figure 22 on page 14: figure has been added

•Figure 23 on page 14: figure has been added

•Figure 24 on page 14: figure has been added

BGA7027 v.1 20100811 Preliminary data sheet - -

Product data sheet Rev. 2 — 26 November 2010 19 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

16. Legal information

16.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

16.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full dat a sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

16.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incid ental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregat e and cumulative liabil ity towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability rela ted to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the applica tion or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification fo r product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 26 November 2010 20 of 21

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automo tive use. It i s neit her qua lified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product cl aims resulting from custome r design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Quick reference data — The Quick reference dat a is an ext ract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

16.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

17. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BGA7027

400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of rele ase: 26 November 2010

Document identifier: BGA7027

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

18. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 3

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 3

9 Scattering parameters. . . . . . . . . . . . . . . . . . . . 4

10 Reliability information. . . . . . . . . . . . . . . . . . . . 5

11 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . . 5

12 Application information. . . . . . . . . . . . . . . . . . . 6

12.1 920 MHz to 960 MHz . . . . . . . . . . . . . . . . . . . . 6

12.2 1930 MHz to 1990 MHz . . . . . . . . . . . . . . . . . 10

12.3 2110 MHz to 2170 MHz . . . . . . . . . . . . . . . . . 12

12.4 PCB stack. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17

14 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 18

15 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18

16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19

16.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19

16.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

16.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 19

16.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20

17 Contact information. . . . . . . . . . . . . . . . . . . . . 20

18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Mouser Electronics

Authorized Distributor

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