VUE 75-12NO7 ECO-PACTM Three Phase Rectifier Bridge IdAV = 74 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes (FRED) VRSM V 1200 VRRM V 1200 Type D VUE 75-12NO7 A H N K Symbol Conditions IdAV IdAVM TC = 85C, module IFSM TVJ = 45C; VR = 0 I2t Maximum Ratings 74 90 A A t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 200 220 A A TVJ = 125C; t = 10 ms VR = 0 t = 8.3 ms (50 Hz) (60 Hz) 170 190 A A TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 200 205 A2s A2s TVJ = 125C; t = 10 ms VR = 0 t = 8.3 ms (50 Hz) (60 Hz) 145 150 A2s A2s -40...+150 150 -40...+125 C C C 3000 3600 V~ V~ 1.5 - 2 Nm 19 g TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL < 1 mA Md Mounting torque (M4) Weight typ. Symbol Conditions t = 1 min t=1s Characteristic Values Features * Package with DCB ceramic base plate in low profile * Isolation voltage 3000 V~ * Planar passivated chips * Low forward voltage drop * Leads suitable for PC board soldering Applications * Supplies for DC power equipment * Input and output rectifiers for high frequency * Battery DC power supplies * Field supply for DC motors Advantages * Space and weight savings * Improved temperature and power cycling capability * Small and light weight * Low noise switching (TVJ = 25C, unless otherwise specified) IR VR = VRRM VR = VRRM TVJ = 25C TVJ = TVJM VF IF = 30 A TVJ = 25C VT0 rt For power-loss calculations only RthJC per diode; DC current per diode; DC current, typ. IRM IF = 50 A; -diF/dt = 100 A/s VR = 100 V; L = 0.05 mH; TVJ = 100C trr IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C dS dA a Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. (c) IXYS All rights reserved max. 0.25 1.0 mA mA 2.71 V 1.31 15 V mW 0.9 0.3 K/W K/W 6 11.4 A 40 tbd 50 11.2 9.7 ns m/s2 mm mm 20070426 typ. -2 VUE 75-12NO7 IXYS reserves the right to change limits, test conditions and dimensions. (c) IXYS All rights reserved 20070426 Dimensions in mm (1 mm = 0.0394") -2 VUE 75-12NO7 5 60 40 Qr [C] 30 TVJ = 100C V R = 600 V 50 2 1 10 0 1 2 VF [V] 3 10 0 100 4 -diF/dt [A/s] 2.0 0.5 0 40 IF = 60 A IF = 30 A IF = 15 A 180 160 Qr 400 600 800 1000 -diF/dt [A/s] Fig. 3 Peak reverse current IRM versus -diF/dt 1.2 TVJ = 100C IF = 30 V 80 0.8 40 0.4 VFR [V] trr [ns] IRM 200 TVJ = 100C VR = 600 V 200 1.5 0 120 220 Kf 1.0 0 1000 Fig. 2 Reverse recovery charge Qr versus -diF/dt Fig. 1 Forward current IF vs. VF 0.0 30 20 20 0 IF = 60 A IF = 30 A IF = 15 A 40 IF = 60 A IF = 30 A IF = 15 A 3 tfr [s] IF [A] 4 TVJ = 150C TVJ = 100C TVJ = 25C 50 60 TVJ = 100C VR = 600 V IRM [A] 70 140 80 120 TVJ [C] 160 120 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0 200 400 600 800 1000 -diF/dt [A/s] Fig. 5 Recovery time trr vs. -diF/dt 0 tfr VFR 0 200 0.0 400 600 800 1000 -diF/dt [A/s] Fig. 6 Peak forward voltage VFR and tfr versus diF/dt 0.1 Constants for ZthJC calculation: i 1 2 3 4 0.01 0.001 0.0001 Rthi (K/W) 0.3012 0.116 0.0241 0.4586 ti (s) 0.0052 0.0003 0.0004 0.0092 VUE 55-12NO7 / VUE 75-12NO7 0.001 0.01 t [s] 0.1 1 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. (c) IXYS All rights reserved 10 20070426 ZthJC [K/W] 1 -2