© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 12
1Publication Order Number:
MMBF4391LT1/D
MMBF4391L, MMBF4392L,
MMBF4393L
JFET Switching Transistors
N−Channel
Features
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage VDS 30 Vdc
Drain−Gate Voltage VDG 30 Vdc
Gate−Source Voltage VGS 30 Vdc
Forward Gate Current IG(f) 50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
SOT−23
CASE 318
STYLE 10
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
MARKING & ORDERING INFORMATION
www.onsemi.com
2 SOURCE
3
GATE
1 DRAIN
XXX = Specific Device Code
M = Date Code*
G= Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
MARKING DIAGRAM
1
XXX M G
G
2
1
3
MMBF4391L, MMBF4392L, MMBF4393L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = 1.0 mAdc, VDS = 0)
V(BR)GSS 30 −Vdc
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0, TA = 25°C)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
IGSS
−
−
1.0
0.20
nAdc
mAdc
Gate−Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
VGS(off)
−4.0
−2.0
−0.5
−10
−5.0
−3.0
Vdc
Off−State Drain Current
(VDS = 15 Vdc, VGS = −12 Vdc)
(VDS = 15 Vdc, VGS = −12 Vdc, TA = 100°C)
ID(off)
−
−
1.0
1.0
nAdc
mAdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
IDSS
50
25
5.0
150
75
30
mAdc
Drain−Source On−Voltage
(ID = 12 mAdc, VGS = 0)
MMBF4391LT1
(ID = 6.0 mAdc, VGS = 0)
MMBF4392LT1
(ID = 3.0 mAdc, VGS = 0)
MMBF4393LT1
VDS(on)
−
−
−
0.4
0.4
0.4
Vdc
Static Drain−Source On−Resistance
(ID = 1.0 mAdc, VGS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
rDS(on)
−
−
−
30
60
100
W
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 0 Vdc, VGS = −15 Vdc, f = 1.0 MHz)
Ciss
−14
pF
Reverse Transfer Capacitance
(VDS = 0 Vdc, VGS = −12 Vdc, f = 1.0 MHz)
Crss
−3.5
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device Marking Package Shipping†
MMBF4391LT1G 6J
SOT−23
(Pb−Free) 3,000 / Tape & Reel
SMMBF4391LT1G* 6J
MMBF4392LT1G 6K
MMBF4393LT1G M6G
SMMBF4393LT1G* M6G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MMBF4391L, MMBF4392L, MMBF4393L
www.onsemi.com
3
TYPICAL CHARACTERISTICS
TJ = 25°C
ID, DRAIN CURRENT (mA)
, TURN-ON DELAY TIME (ns)
d(on)
t
5.0
2.0
20
10
0.5 1.0 3.0 7.05.0
1.0
50
100
0.7 2.0 10 20
ID, DRAIN CURRENT (mA)
, RISE TIME (ns)
r
t
Figure 1. Turn−On Delay Time Figure 2. Rise Time
RK = RD'
RK = 0
RK = RD'
RK = 0
ID, DRAIN CURRENT (mA)
, TURN-OFF DELAY TIME (ns)
d(off)
t
Figure 3. Turn−Off Delay Time
RK = RD'
RK = 0
ID, DRAIN CURRENT (mA)
Figure 4. Fall Time
RK = RD'
RK = 0
, FALL TIME (ns)
f
t
MMBF4391
MMBF4392
MMBF4393
30 50
200
500
1000
0.5 1.0 3.0 7.05.00.7 2.0 10 20 30 50
5.0
2.0
20
10
1.0
50
100
200
500
1000
0.5 1.0 3.0 7.0
5.0
0.7 2.0 10 20 30 500.5 1.0 3.0 7.0
5.0
0.7 2.0 10 20 30 50
5.0
2.0
20
10
1.0
50
100
200
500
1000
5.0
2.0
20
10
1.0
50
100
200
500
1000
TJ = 25°C
MMBF4391
MMBF4392
MMBF4393
TJ = 25°C
MMBF4391
MMBF4392
MMBF4393
TJ = 25°C
MMBF4391
MMBF4392
MMBF4393
VGS(off) = 12 V
= 7.0 V
= 5.0 V
VGS(off) = 12 V
= 7.0 V
= 5.0 V
VGS(off) = 12 V
= 7.0 V
= 5.0 V
VGS(off) = 12 V
= 7.0 V
= 5.0 V
MMBF4391L, MMBF4392L, MMBF4393L
www.onsemi.com
4
Figure 5. Switching Time Test Circuit
Figure 6. Typical Forward Transfer Admittance Figure 7. Typical Capacitance
ID, DRAIN CURRENT (mA)
2.0
5.0
3.0
7.0
0.5 1.0 3.0 7.05.0 5030
10
20
0.7 2.0 10 20
, FORWARD TRANSFER ADMITTANCE (mmhos)
fs
V
10
2.0
15
3.0
5.0
7.0
0.5 1.0 3.0 305.00.30.1 100.050.03
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Tchannel = 25°C
VDS = 15 V Tchannel = 25°C
(Cds is negligible
Cgs
VDD
VGG
RGG
RT
RGEN
50 W
VGEN
RK
RD
OUTPUT
INPUT
50
W
50
W
SET VDS(off) = 10 V
INPUT PULSE
tr ≤ 0.25 ns
tf ≤ 0.5 ns
PULSE WIDTH = 2.0 ms
DUTY CYCLE ≤ 2.0%
RGG > RK
RD' = RD(RT + 50)
RD + RT + 50
Figure 8. Effect of Gate−Source Voltage
on Drain−Source Resistance
80
120
160
200
50
1.0 3.0 170
5.0 20-10-40
2.0 80 140-70
VGS, GATE-SOURCE VOLTAGE (VOLTS)
r
4.00
40
100 mA 125 mA
75 mA50 mA
25 mA
IDSS
= 10
mA
Tchannel = 25°C
Figure 9. Effect of Temperature on Drain−Source
On−State Resistance
1.8
1.0
2.0
1.2
1.4
1.6
0.8
0.6
0.4
ID = 1.0 mA
VGS = 0
, DRAIN-SOURCE ON-STATE
DS(on)
RESISTANCE (NORMALIZED)
Tchannel, CHANNEL TEMPERATURE (°C)
1.5
1.0
Cgd
110
6.0 7.0 8.0
0
r , DRAIN-SOURCE ON-STATE
DS(on) RESISTANCE (OHMS)
MMBF4393
MMBF4392 MMBF4391
NOTE 1
The switching characteristics shown above were measured using
a test circuit similar to Figure 5. At the beginning of the switching
interval, the gate voltage is at Gate Supply Voltage (−VGG). The
Drain−Source Voltage (VDS) is slightly lower than Drain Supply
Voltage (VDD) due to the voltage divider. Thus Reverse Transfer
Capacitance (Crss) of Gate−Drain Capacitance (Cgd) is charged to
VGG + VDS.
During the turn−on interval, Gate−Source Capacitance (Cgs)
discharges through the series combination of RGen and RK. Cgd must
discharge to VDS(on) through RG and RK in series with the parallel
combination of effective load impedance (R’D) and Drain−Source
Resistance (rDS). During the turn−off, this charge flow is reversed.
Predicting turn−on time is somewhat difficult as the channel
resistance rDS is a function of the gate−source voltage. While Cgs
discharges, VGS approaches zero and rDS decreases. Since Cgd
discharges through rDS, turn−on time is non−linear. During turn−off,
the situation is reversed with rDS increasing as Cgd charges.
The above switching curves show two impedance conditions; 1)
RK is equal to RD’ which simulates the switching behavior of
cascaded stages where the driving source impedance is normally the
load impedance of the previous stage, and 2) RK = 0 (low
impedance) the driving source impedance is that of the generator.
MMBF4391L, MMBF4392L, MMBF4393L
www.onsemi.com
5
Figure 10. Effect of IDSS on Drain−Source
Resistance and Gate−Source Voltage
IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)
, DRAIN-SOURCE ON-STATE
DS(on)
r
20
10
30
40
50
30 40 50 60 70
20
RESISTANCE (OHMS)
0
10
0
1.0
2.0
3.0
4.0
5.0
, GATE-SOURCE VOLTAGE
GS
V
(VOLTS)
Tchannel = 25°C
VGS(off)
rDS(on) @ VGS = 0
6.0
7.0
8.0
9.0
10
70
60
80
90
100
80 90 100 110 120 130 140 150
NOTE 2
The Zero−Gate−Voltage Drain Current (IDSS) is the
principle determinant of other J−FET characteristics.
Figure 10 shows the relationship of Gate−Source Off
Voltage (VGS(off)) and Drain−Source On Resistance
(rDS(on)) to IDSS. Most of the devices will be within
±10% of the values shown in Figure 10. This data will
be useful in predicting the characteristic variations for
a given part number.
For example:
Unknown
rDS(on) and VGS range for an MMBF4392
The electrical characteristics table indicates that an
MMBF4392 has an IDSS range of 25 to 75 mA. Figure
10 shows rDS(on) = 52 W for IDSS = 25 mA and 30 W for
IDSS = 75 mA. The corresponding VGS values are 2.2 V
and 4.8 V.
MMBF4391L, MMBF4392L, MMBF4393L
www.onsemi.com
6
PACKAGE DIMENSIONS
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MMBF4391LT1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
◊
