1MBH50D-060S Molded IGBT
600V / 50A Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C) Equivalent Circuit Schematic
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector DC Tc=25°C IC25
current Tc=100°C IC100
1ms Tc=25°C Icp
Max. power dissipation (IGBT) PC
Max. power dissipation (FWD) PC
Operating temperature Tj
Storage temperature Tstg
Screw torque -
Rating
600
±20
75
50
150
230
150
+150
-40 to +150
58.8 to 78.4
Unit
V
V
A
A
A
W
W
°C
°C
N·cm
C:Collector
E:Emitter
G:Gate
IGBT + FWD
Electrical characteristics (at Tc=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Switching
Time Turn-on time
Turn-off time
FWD forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton *
tr *
trr2
toff
tf
ton *
tr *
trr2
toff
tf
VF
trr
– – 1.0
––10
4.0 5.0 6.0
– 2.4 2.9
– 2500 –
– 240 –
– 130 –
– 0.15 –
– 0.09 –
– 0.03 –
– 0.50 0.62
– 0.10 0.17
– 0.15 –
– 0.09 –
– 0.03 –
– 0.50 0.62
– 0.10 0.17
– 2.0 2.5
– 0.06 0.10
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, I C=50mA
VGE=15V, IC=50A
VGE=0V
VCE=25V
f=1MHz
VCC=300V, IC=50A
VGE=±15V
RG=33 ohm
(Half Bridge)
Inductance Load
VCC=300V, IC=50A
VGE=+15V
RG=8 ohm
(Half Bridge)
Inductance Load
IF=50A, VGE=0V
IF=50A, VGE=-10V,
VR=300V, di/dt=100A/µs
mA
µA
V
V
pF
µs
µs
V
µs
Symbol Characteristics Conditions Unit
Min. Typ. Max.
*Turn-on characteristics include trr2. See a figure in next page.
Thermal resistance characteristics
Thermal resistance – – 0.54
– – 0.83 IGBT
FWD °C/W
°C/W
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Rth(j-c)
1MBH50D-060S Molded IGBT
Outline drawings, mm
TO-3PL
Gate
Collector
Emitter
Switching waveform (Inductance load)
Mesurement circuit
Characteristics
1MBH50D-060S Molded IGBT
Collector current vs. Collector-Emitter voltage
Tj=25°C
Collector-Emitter Voltage : VCE (V)
Collector Current : IC (A)
Collector Current : IC (A)
Collector-Emitter Voltage : VCE (V)
Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=25°C Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=125°C
Collector-Emitter Voltage : VCE (V)
Collector-Emitter Voltage : VCE (V)
Gate-Emitter Voltage : VGE (V) Gate-Emitter Voltage : VGE (V)
Switching time vs. Collector current
VCC=300V, RG=8Ω, VGE=+15V, Tj=125°C
Switching time vs. Collector current
VCC=300V, RG=33Ω, VGE=±15V, Tj=125°C
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Collector current : IC (A) Collector current : IC (A)
IGBT Module
Characteristics
1MBH50D-060S
Gate resistance : RG (Ω)
Switching time vs. RG
VCC=300V, IC=50A, VGE=+15V , Tj=125°C
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Gate resistance : RG (Ω)
Switching time
: tf,toff, tr, ton, trr2 (nsec)
Switching time vs. RG
VCC=300V, IC=50A, VGE=±15V, Tj=125°C
Dynamic input characteristics
Tj=25°C
Collector-Emitter voltage : VCE (V)
Gate charge : Qg (nc)
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Capacitance : Cies, Coes, Cres (nF)
Collector-Emitter Voltage : VCE (V)
Reverse Biased Safe Operating Area
RG=8Ω, +VGE 20V , -VGE=15V, Tj 125°C
=
<
=
<
Collector current : IC (A)
Collector-Emitter voltage : VCE (V) Collector-Emitter voltage : VCE (V)
Collector current : IC (A)
Forward Bias Safe Operating Area
Gate-Emitter voltage : VGE (V)
IGBT Module
Characteristics
1MBH50D-060S
Reverse recovery time vs. Forward current
VR=300V, -di/dt=100A/µsec
Reverse recovery time : trr [nsec]
Forward current : IF (A) Forward current : IF (A)
Reverse recovery current : Irr [A]
Forward voltage vs. Forward current
Forward Current : IF [A]
Forward Voltage : VF (V)
Reverse recovery chracteristics vs. -di/dt
VR=300V, IF=50A, Tj=125°C
Reverse recovery time : trr [nsec]
-di/dt [A/µsec]
Reverse recovery current : Irr [A]
Transient thermal resistance
Reverse recovery current vs. Forward current
VR=300V, -di/dt=100A/µsec
Thermal resistance : Rth(j-c) [°C/W]
Pulse width : PW (sec)
