FSB67508 - FAIRCHILD SEMICONDUCTOR

FSB67508 Rev. A

FSB67508 Smart Power Module (SPM®)

SPM

October 2009

FSB67508

Smart Power Module (SPM®)

Features

•R

DS(ON).MAX=11mΩ @ ID=38A,TJ=25°C a half-bridge FRFET

inverter including high voltage integrated circuit (HVIC)

• Negative dc-link terminals for inverter current sensing appli-

cations

• HVIC for gate driving and protection functions

• 3/5V CMOS/TTL compatible, active-high interface

• Isolation voltage rating of 1500Vrms for 1min.

• Embedded bootstrap diode in the package

General Description

FSB67508 is a smart power module (SPM®) as a compact

solution for small power motor drive applications such as E-

bike. It is composed of 2 MOSFET, and 1 half-bridge HVIC for

gate driving. This offers an extremely compact, high

performance half-bridge inverter in a single isolated package .

The package is optimized for the thermal performance and

compactness for the use in the built-in motor application and

any other application where the assembly space is concerned.

Absolute Maximum Ratings

*Repetitive rating : Pulse width limited by maximum junction temperature

Symbol Parameter Conditions Rating Units

VPN DC Link Input Voltage,

Drain-source Voltage of each FET 75 V

ID25 Each FET Drain Current, Continuous TC = 25°C 38 A

ID80 Each FET Drain Current, Continuous TC = 80°C 28 A

IDP Each FET Drain Current, Peak TC = 25°C, Pulsed* 95 A

PDMaximum Power Dissipation TC = 25°C, Each 32 W

VCC Control Supply Voltage Applied between VCC and COM 20 V

VBS High-side Bias Voltage Applied between VB and U 20 V

VIN Input Signal Voltage Applied between IN and COM -0.3 ~ VCC V

TJOperating Junction Temperature -40 ~ 150 °C

TSTG Storage Temperature -50 ~ 150 °C

RθJC Junction to Case Therma l Resistance Each under inverter operating condition

(Note 1) 3.9 °C/W

2www.fairchildsemi.com

FSB67508 Rev. A

FSB67508 Smart Power Module (SPM®)

Pin Descriptions

Note:

Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM®. External connections should be made as indicated in

Figure2.

Figure 1. Internal Block Diagram

Pin Number Pin Name Pin Description

1 P Positive DC–Link Input

2VS Bias Voltage Ground for High Side MOSFET Driving

3VB High-side Bias Voltage for MOSFET Driving

4VCC Bias Voltage for IC and Low side MOSFET Driving

5 HIN Signal Input for High-side

6LIN Signal Input for Low-side

7COM Common Supply Ground

8NC No connection

9 N Negative DC-Link Input

10 UOutput

COM

VCC

LIN

HIN

(4) VCC

(5) HIN

(6) LIN

(1) P

(10) U

(9) N

(7) COM

(3) VB

NC(8) NC

(2) VS

3www.fairchildsemi.com

FSB67508 Rev. A

FSB67508 Smart Power Module (SPM®)

Electrical Characteristics (TJ = 25°C, VCC=VBS=15V Unless Otherwise Specified)

Inverter Part (Each MOSFET Unless Otherwise Specified)

Control Part (Each HVIC Unless Otherwise Specified)

Note:

1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each FET inside SPM®. VPN sho uld be sufficiently less than this value considering the

effect of the stray inductance so that VDS should not exceed BVDSS in any case.

2. tON and tOFF include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the

field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 3 for the switching time definition with the switching test circuit of Figure 4.

3. The peak current and vol t a ge of ea ch FET dur i ng the switching opera tion sh oul d be incl u ded in the safe o per a ti ng a re a (SOA ). Please see Figure 4 for the RBSOA test circuit

that is same as the switching test circuit.

Package Marking & Ordering Information

Symbol Parameter Conditions Min Typ Max Units

BVDSS Drain-Source Breakdown

Voltage VIN= 0V, ID = 250μA (Note 2) 75 - - V

ΔBVDSS/

ΔTJ

Breakdown Voltage Tem-

perature Coefficient ID = 250μA, Referenced to 25°C -0.6 - V

IDSS Zero Gate Voltage

Drain Current VIN= 0V, VDS = 75V - - 250 μA

RDS(on) Static Drain-Source

On-Resistance VCC = VBS = 15V, VIN = 5V, ID = 15A -9.4 11 mΩ

VSD Drain-Source Diode

Forward Voltage VCC = VBS = 15V, VIN = 0V, ID = 15A - - 1.2 V

tON

Switching Times

VPN = 48V, VCC = VBS = 15V, ID = 15A

VIN = 0V ↔ 5V

Inductive load L=3mH

High- and low-side FET switching

(Note 3)

-550 -ns

tOFF -2000 -ns

trr -100 -ns

EON -40 -μJ

EOFF -190 -μJ

RBSOA Reverse-bias Safe Oper-

ating Area

VPN = 55V, VCC = VBS = 15V, ID = IDP, VDS=BVDSS,

TJ = 150°C

High- and low-side FET switching (Note 3) Full Square

Symbol Parameter Conditions Min Typ Max Units

IQCC Quiescent VCC Current VCC=15V, VIN=0V Applied between VCC and COM - - 160 μA

IQBS Quiescent VBS Current VBS=15V, VIN=0V Applied between VB(U)-U,

VB(V)-V, VB(W)-W - - 100 μA

UVCCD Low-side Undervoltage

Protection (Figure 6) VCC Undervoltage Protection Detection Level 7.4 8.0 9.4 V

UVCCR VCC Undervoltage Protection Reset Level 8.0 8.9 9.8 V

UVBSD High-side Undervoltage

Protection (Figure 7) VBS Undervoltage Protection Detection Level 7.4 8.0 9.4 V

UVBSR VBS Undervoltage Protection Reset Level 8.0 8.9 9.8 V

VIH ON Threshold Voltage Logic High Level Applied between IN and COM 3.0 - - V

VIL OFF Threshold Voltage Logic Low Level - - 0.8 V

IIH Input Bias Current VIN = 5V Applied between IN and COM -10 20 μA

IIL VIN = 0V - - 2 μA

Device Marking Device Package Reel Size Tape Width Quantity

FSB67508 FSB67508 SPM10-AA _ _ 19

4www.fairchildsemi.com

FSB67508 Rev. A

FSB67508 Smart Power Module (SPM®)

Recommended Operating Conditions

Note:

(1) The snubber capacitor, C3, should be placed near SPM®

(2) Parameters for bootsrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of paramete rs is sho wn above .

(3) RC coupling (R5 and C5) at each input (indicated as dotted lines) may be used to prevent improper input signal due to surge noise. Signal input of SPM® is compatible with

standard CMOS or LSTTL outptus.

(4) Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge voltage. Bypass capacitors such as C1, C2

and C3 should have good high-frequency characteristics to absorb high-frequency ripple current.

Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters

Bootstrap Diode Part

Symbol Parameter Conditions Value Units

Min. Typ. Max.

VPN Supply Voltage Applied between P and N -48 60 V

VCC Control Supply Voltage Applied between VCC and COM 13.5 15 16.5 V

VBS High-side Bias Voltage Applied between VB and output 13 15 16.5 V

VIN(ON) Input ON Threshold Voltage Applied between IN and COM 3.0 -VCC V

VIN(OFF) Input OFF Threshold Voltage 0 - 0.6 V

tdead Blanking Time for Preventing

Arm-short VCC=VBS=13.5 ~ 20V, TJ ≤ 150°C 1.0 - - μs

fPWM PWM Switching Frequency TJ ≤ 150°C -15 -kHz

Symbol Parameter Conditions Rating Units

VRRM Maixmum Repetitive Reverse Voltage 75 V

IFForward Current TC = 25°C 0.5 A

IFP Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 2 A

TJOperating Junction Temperature -40 ~ 150 °C

RBEquivalent Bootstrap Resistance TC = 25°C 15 Ω

Inverter

Output

Micom

15-V

Line

10μF

These values depend on

PWM control algorithm

* Example of bootstrap paramters:

C 1 = C2 = 1μF ceramic capacitor,

VDC

COM

VCC

LIN

HIN

VS P

HIN LIN

0 0

0 1

1 0

1 1

Open Open

Output

VDC

Forbidden

Note

B o th FET O ff

Low -side FET O n

High-side FET On

Shoot-through

S a me a s (0 , 0 )

x x Z Same as (0, 0)

5www.fairchildsemi.com

FSB67508 Rev. A

FSB67508 Smart Power Module (SPM®)

Figure 3. Switching Time Definition

Figure 4. Switching and RBSOA(Single-pulse) Test Circuit (Low-side)

Figure 5. Undervoltage Prot ection (Low-side)

Figure 6. Undervoltage Protection (High-side)

tON trr

Irr

100% of ID120% of ID

(a) Turn -on

tOFF

(b) Tu rn -o ff

VDS

VIN VIN

10% of ID

VCC

LVDC

VDS

COM

VCC

LIN

HIN

CBS

O ne-le g Diagram of SP M

UVCCD

UVCCR

Input Signal

UV Protection

Status

Low-side Supply, VCC

MOSFET Current

RESET DETECTION RESET

UVBSD

UVBSR

Input Signal

UV Protection

Status

High-si de Supply, VBS

MOSFET Current

RESET DETECTION RESET

6www.fairchildsemi.com

FSB67508 Rev. A

FSB67508 Smart Power Module (SPM®)

Fig. 7. Example of Application Circuit

Note:

Built in bootstrap diode includes around 15Ωresistance characteristic.

Figure 8. Built in Bootstrap Diode Characteristics

(4) VCC

(5) HIN

(6) LIN

(1) P

(7) CO M

(3) VB

(8) NC

(10) U

(9) N

COM

VCC

LIN

HIN

(2) VS

(4) VCC

(5) HIN

(6) LIN

(1) P

(7) CO M

(3) VB

(8) NC

(10) V

(9) N

COM

VCC

LIN

HIN

(2) VS

(4) VCC

(5) HIN

(6) LIN

(1) P

(7) CO M

(3) VB

(8) NC

(10) W

(9) N

COM

VCC

LIN

HIN

(2) VS

Micom

C3VDC

For 3-phase current sensing and protection

+15V

Supply

0123456789101112131415

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0 Built in Bootstrap Dio d e VF-IF Characteristic

TC=25℃

IF [A]

VF [V]

7www.fairchildsemi.com

FSB67508 Rev. A

FSB67508 Smart Power Module (SPM®)

Detailed Package Outline Drawings

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

AccuPower™

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

EfficentMax™

EZSW ITCH™*

™*

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FETBench™

FlashWriter®*

FPS™

F-PFS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MillerDrive™

MotionM ax™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP SPM™

Power-SPM™

PowerTrench®

PowerXS™

Programmable Active Droop™

QFET®

QS™

Quiet Series™

RapidConfigure™

™

Saving our world, 1mW/W/kW at a time™

SmartMax™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Sync-Lock™ ®*

The Power Franchise®

TinyBoost™

TinyBuck™

TinyCalc™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

TriFault Detect™

TRUECURRENT™*

μSerDes™

UHC®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHI LD SEM ICONDUCTOR RESERVES THE RIG HT TO MAKE CHANGES WITHOUT F URTHER NOTICE TO ANY PRODUCTS HEREI N TO IMPRO VE

RELIABI LITY , FUNCTION, O R DESIGN. FAI RCHILD DOES NOT ASSUME ANY L IABIL ITY ARI SING OUT OF THE APPL ICATION O R USE OF ANY PRODUCT OR

CIRCUI T DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LI CENSE UNDER ITS PATENT RIGHTS, NOR THE RI GHTS OF OTHERS. THESE

SPECIFI CATIONS DO NO T EXPAND THE TERMS OF FAIRCHI LD’S WORLDWIDE TERMS AND CO NDITIONS, SPECIFI CALLY THE WARRANTY THEREIN,

WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHI LD’S PRODUCTS ARE NOT AUTHORIZED F OR USE AS CRITI CAL COM PONENTS IN LI FE SUPPORT DEVICES OR SY STEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAI RCHI LD SEM ICONDUCTOR CORPORATIO N.

As used herein:

1. Life support devices or systems are devices or system s which, (a) are

intended for surgical im plant i nto the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its

safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www .fairchildsemi.com,

under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.

Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,

and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of

counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are

listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have

full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.

Fairchild and our Authorized Distributors will stand behind all w arranties and will appropriately address any warranty issues th at may arise. Fair child will n ot provide

any w arranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our

customers to do their part in stopping this practice by buy ing direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in

any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes

at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only. Rev. I41