APT609RKVR 600V 9.0 1A POWER MOS V (R) TO-220 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. G * Faster Switching * 100% Avalanche Tested * Lower Leakage * Popular TO-220 Package VDSS ID D S G L A C I N H C N E T O I E AT C N RM A V FO D A IN MAXIMUM RATINGS Symbol D All Ratings: TC = 25C unless otherwise specified. Parameter APT609RKVR UNIT 600 Volts Drain-Source Voltage 1 Continuous Drain Current @ TC = 25C 1 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 VGSM PD TJ,TSTG S Amps 4 Volts Total Power Dissipation @ TC = 25C 31 Watts Linear Derating Factor .25 W/C -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 1 (Repetitive and Non-Repetitive) 1 EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 Amps 15 4 mJ 55 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 600 Volts 1 Amps On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 9.0 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 250 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) UNIT Ohms A 100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-7253 Rev - 2-2002 Symbol DYNAMIC CHARACTERISTICS Symbol APT609RKVR Characteristic Test Conditions MIN TYP Ciss Input Capacitance VGS = 0V 249 Coss Output Capacitance VDS = 25V 42 Crss Reverse Transfer Capacitance f = 1 MHz 13 Qg Total Gate Charge VGS = 10V 15 Qgs Gate-Source Charge 3 VDD = 0.5 VDSS 1 ID = 20ma @ 25C 7 VGS = 15V 11 Rise Time VDD = 0.5 VDSS 13 Turn-off Delay Time ID = 1A @ 25C 73 RG = 1.6 86 Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr td(off) tf Fall Time L A C I N H C N E T O I E AT C N RM A V FO D A IN MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions MIN TYP Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/s) MAX 1 4 1.3 UNIT Amps Volts 162 ns 1 C THERMAL CHARACTERISTICS Symbol MIN Characteristic TYP RJC Junction to Case 4.0 RJA Junction to Ambient 80 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 110mH, R = 25, Peak I = 1A j G L 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. TO-220AC Package Outline 1.39 (.055) 0.51 (.020) 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) Drain 6.85 (.270) 5.85 (.230) 16.51 (.650) 14.23 (.560) 4.08 (.161) Dia. 3.54 (.139) 3.42 (.135) 2.54 (.100) 6.35 (.250) MAX. 14.73 (.580) 12.70 (.500) 2-2002 0.50 (.020) 0.41 (.016) 050-7253 Rev - MAX Gate Drain Source 2.92 (.115) 2.04 (.080) 1.01 (.040) 3-Plcs. 0.38 (.015) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190) 4.82 (.190) 3.56 (.140) 1.77 (.070) 3-Plcs. 1.15 (.045) Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 UNIT C/W