AO7800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters.It is ESD protected. Standard Product AO7800 is Pbfree (meets ROHS & Sony 259 specifications). AO7800L is a Green Product ordering option. AO7800 and AO7800L are electrically identical. VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) RDS(ON) < 300m (VGS = 4.5V) RDS(ON) < 350m (VGS = 2.5V) RDS(ON) < 450m (VGS = 1.8V) SC-70-6 (SOT-323) Top View S1 G1 D2 1 6 2 5 3 4 G2 G1 D1 G2 S2 Pulsed Drain Current TA=25C TA=70C 8 V Junction and Storage Temperature Range 0.3 W 0.19 TJ, TSTG -55 to 150 Symbol t 10s Steady-State Steady-State A 5 PD TA=70C Alpha Omega Semiconductor, Ltd. Units V 0.7 ID IDM B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Maximum 20 0.9 TA=25C Power Dissipation A S2 S1 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A D2 D1 RJA RJL Typ 360 400 300 C Max 415 460 350 Units C/W C/W C/W AO7800 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS=8V VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 0.5 ID(ON) On state drain current VGS=4.5V, V DS=5V 5 TJ=55C 5 A 0.75 0.9 V 181 300 253 350 VGS=2.5V, I D=0.75A 237 350 m VGS=1.8V, I D=0.7A 317 450 m 1 V 0.4 A 120 pF TJ=125C A gFS Forward Transconductance VDS=5V, ID=0.8A 2.6 VSD Diode Forward Voltage IS=0.5A,VGS=0V Maximum Body-Diode Continuous Current 0.69 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge S 17 pF 14 VGS=0V, VDS=0V, f=1MHz VGS=4.5V, V DS=10V, I D=0.8A pF 3 4 1.57 1.9 nC nC Gate Drain Charge 0.36 nC Turn-On DelayTime 3.2 ns tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Qrr 101 VGS=0V, VDS=10V, f=1MHz m 0.13 Qgd trr A 25 VGS=4.5V, I D=0.9A IS Units V VDS=16V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 IDSS RDS(ON) Typ VGS=5V, VDS=10V, RL=12.5, RGEN=6 4 ns 15.5 ns 2.4 Body Diode Reverse Recovery Time IF=0.8A, dI/dt=100A/s 6.7 Body Diode Reverse Recovery Charge IF=0.8A, dI/dt=100A/s 1.6 ns 8.1 A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : July 2003 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. ns nC AO7800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4 8V 10V VDS=5V 5V 8 3 4V ID (A) ID(A) 3.5V 6 3V 4 25C 125C 2 2.5V 1 VGS=2V 2 0 0 0 1 2 3 4 5 0 0.5 480 1.5 2 2.5 3 1.8 440 VGS=1.8V Normalized On-Resistance VGS=1.8V 400 RDS(ON) (m) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 360 320 VGS=2.5V 280 240 VGS=4.5V 200 1.6 VGS=2.5V ID=0.75A I 0 7A 1.4 VGS=4.5V ID=0.9A 1.2 1 160 0 1 2 3 0.8 4 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 500 1E+01 460 1E+00 420 125C ID=0.9A 380 1E-01 340 IS (A) RDS(ON) (m) 25 125C 300 260 1E-02 25C 1E-03 220 25C 1E-04 180 140 1E-05 1 2 3 4 5 6 7 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.4 0.8 1.2 1.6 VSD (Volts) Figure 6: Body-Diode Characteristics 2.0 AO7800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 5 VDS=10V ID=0.9A Capacitance (pF) VGS (Volts) 4 3 2 1 150 Ciss 100 Coss 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 5 TJ(Max)=150C, TA=25C 16 100s 10ms 1s 0.1 10s 1 10 0 0.001 100 VDS (Volts) ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=415C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 8 4 DC 0.0 0.1 20 12 1ms 0.1s 1.0 15 TJ(Max)=150C TA=25C 10s Power (W) ID (Amps) RDS(ON) limited 10 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 Crss 50 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000