G
S
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NTE67
MOSFET
N−Ch, Enhancement Mode
High Speed Switch
Description:
The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features:
DLower RDS(ON)
DImproved Inductive Ruggedness
DFast Switching Times
DLower Input Capacitance
DExtended Safe Operating Area
DImproved High Temperature Reliability
Absolute Maximum Ratings:
Drain−Source Voltage (TJ = +255C to +1505C), VDSS 400V..................................
Drain−Gate Voltage (RGS = 1M+, TJ = +255C to +1255C), VDGR 400V.........................
Gate−Source Voltage, VGS +20V.........................................................
Continuous Drain Current, ID
TC = +255C 4.5A.................................................................
TC = +1005C 3.0A................................................................
Pulsed Drain Current (Note 2), IDM 18A...................................................
Pulsed Gate Current, IGM +1.5A..........................................................
Single Pulsed Avalanche Energy (Note 3), EAS 290mJ......................................
Avalanche Current, IAS 5.5A.............................................................
Total Power Dissipation (TC = +255C), PD75W............................................
Derate Above 255C 0.6W/5C.......................................................
Operating Junction Temperature Range, TJ−555 to +1505C..................................
Storage Temperature Range, Tstg −555 to +1505C..........................................
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), TL+3005C...................
Thermal Resistance, Junction−to−Case, RthJC 1.67K/W.....................................
Thermal Resistance, Junction−to−Ambient, RthJA 80K/W....................................
Thermal Resistance, Case−to−Sink (Mounting surface flat, smooth, and greased), RthCS 0.24K/W
Note 1. Pulse Test: Pulse Width 3 300.s, Duty Cycle 3 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 17mH, Vdd = 50V, RG = 25+, Starting TJ = +255C.
Rev. 10−13
Electrical Characteristics: (TC = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain−Source Breakdown Voltage BVDSS VGS = 0V, ID = 250.A 400 − − V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250.A 2.0 −4.0 V
Gate−Source Leakage, Forward IGSS VGS = 20V − − 100 nA
Gate−Source Leakage, Reverse IGSS VGS = −20V − − −100 nA
Zero Gate Voltage Drain Current IDSS VDS = Max. Rating, VGS = 0V − − 250 .A
VDS = Max. Rating x 0.8, VGS = 0V,
TC = +1255C
− − 1000 .A
On−State Drain−Source Current ID(on) VDS > ID(on) x RDS(on)max, VGS = 10V, Note 1 4.5 − − A
Static Drain−Source On−State
Resistance
RDS(on) VGS = 10V, ID = 3A, Note 1 −1.0 1.5 +
Forward Transconductance gfs VDS . 50V, ID = 3A, Note 1 2.9 4.4 −mhos
Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz −780 −pF
Output Capacitance Coss −99 −pF
Reverse Transfer Capacitance Crss −43 −pF
Turn−On Delay Time td(on) VDD = 0.5BVDSS, ID = 5.5A, ZO = 12+
(MOSFET switching times are essentially
independent of operating temperature)
−11 17 ns
Rise Time tr−19 29 ns
Turn−Off Delay Time td(off) −37 56 ns
Fall Time tf−16 24 ns
Total Gate Charge
(Gate−Source Plus Gate−Drain)
QgVGS = 10V, ID = 5.5A, VDS = 0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature)
−18 30 nC
Gate−Source Charge Qgs −40 −nC
Gate−Drain (“Miller”) Charge Qgd −14 −nC
Note 1. Pulse Test: Pulse Width 3 300.s, Duty Cycle 3 2%.
Source−Drain Diode Ratings and Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Continuous Source Current (Body Diode) IS− − 4.5 A
Pulse Source Current (Body Diode) ISM Note 2 − − 18 A
Diode Forward Voltage VSD TC = +255C, IS = 4.5A, VGS = 0V − − 1.6 V
Reverse Recovery Time trr TJ = +255C, IF = 5.5A, dIF/dt = 100A/.s−310 660 ns
Note 1. Pulse Test: Pulse Width 3 300.s, Duty Cycle 3 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75) Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
Drain/Tab
Source
.110 (2.79)
