1. Product profile
1.1 General description
NPN wideband transistor in a plastic SOT23 package.
PNP complement: BFT93.
1.2 Features
nVery high power gain
nLow noise figure
nVery low intermodulation distortion
1.3 Applications
nRF wideband amplifiers and oscillators
1.4 Quick reference data
BFR93AR
NPN 6 GHz wideband transistor
Rev. 01 — 30 November 2006 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCBO collector-base voltage open emitter - - 15 V
VCEO collector-emitter voltage open base - - 12 V
ICcollector current - - 35 mA
Ptot total power dissipation Tsp ≤95 °C - - 300 mW
Cre feedback capacitance IC= 0 mA; VCE = 5 V; f = 1 MHz; - 0.6 - pF
fTtransition frequency IC= 30 mA; VCE =5V;
f = 500 MHz; - 6 - GHz
GUM unilateral power gain IC= 30 mA; VCE =8V;
Tamb =25°C
f = 1 GHz - 13 - dB
f = 2 GHz - 7 - dB
NF noise figure IC= 5 mA;VCE = 8 V;f = 1 GHz;
ΓS=Γopt; Tamb =25°C- 1.9 - dB
VOoutput voltage IMD = −60 dB; IC=30mA;
VCE =8V; R
L=75Ω;
Tamb =25°C;
fp+fq−fr= 793.25 MHz
- 425 - mV
BFR93AR_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 30 November 2006 2 of 13
NXP Semiconductors BFR93AR
NPN 6 GHz wideband transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
[1] Tsp is the temperature at the solder point of the collector pin.
Table 2. Pinning
Pin Description Simplified outline Symbol
1 emitter
2 base
3 collector
12
3
sym026
3
1
2
Table 3. Ordering information
Type number Package
Name Description Version
BFR93AR - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking
Type number Marking code Description
BFR93AR *R5 * = p : made in Hong Kong
* = w : made in China
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 15 V
VCEO collector-emitter voltage open base - 12 V
VEBO emitter-base voltage open collector - 2 V
ICcollector current - 35 mA
Ptot total power dissipation Tsp ≤95 °C; see Figure 2 [1] - 300 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature - +175 °C
BFR93AR_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 30 November 2006 3 of 13
NXP Semiconductors BFR93AR
NPN 6 GHz wideband transistor
6. Thermal characteristics
[1] Tsp is the temperature at the solder point of the collector pin.
7. Characteristics
[1] GUM is the maximum unilateral power gain, assuming S12 is zero and
[2] Measured on the same crystal in a SOT37 package (BFR91A).
[3] IMD = −60 dB (DIN 45004B); IC= 30 mA; VCE =8V; R
L=75Ω; Tamb =25°C;
Vp=V
O at IMD = −60 dB; fp= 795.25 MHz;
Vq=V
O−6 dB at fq= 803.25 MHz;
Vr=V
O−6 dB at fr= 805.25 MHz;
measured at fp+fq−fr= 793.25 MHz
[4] IC= 30 mA; VCE =8V; R
L=75Ω; Tamb =25°C;
Vp= 200 mV at fp= 250 MHz;
Vq= 200 mV at fp= 560 MHz;
measured at fp+fq= 810 MHz
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-sp) thermal resistance from junction to solder point Tsp ≤95 °C[1] 260 K/W
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off current IE= 0 A; VCB =5V - - 50 nA
hFE DC current gain IC= 30 mA; VCE = 5 V; see Figure 3 40 90 -
Cccollector capacitance IE=i
e= 0 A; VCB = 5 V; f = 1 MHz;
see Figure 4 - 0.7 - pF
Ceemitter capacitance IC=i
c= 0 A; VEB = 0.5 V; f = 1 MHz - 1.9 - pF
Cre feedback capacitance IC=i
c= 0 A; VCE = 5 V; f = 1 MHz;
Tamb =25°C- 0.6 - pF
fTtransition frequency IC= 30 mA; VCE = 5 V; f = 500 MHz;
see Figure 5 4.5 6 - GHz
GUM unilateral power gain IC= 30 mA; VCE =8V;T
amb =25°C;
see Figure 6 to Figure 9 [1]
f = 1 GHz - 13 - dB
f = 2 GHz - 7 - dB
NF noise figure IC= 5 mA; VCE =8V;ΓS=Γopt;
Tamb =25°C; see Figure 12 and
Figure 13
f = 1 GHz - 1.9 - dB
f = 2 GHz - 3 - dB
VOoutput voltage [2][3] - 425 - mV
IMD2 second-order intermodulation
distortion see Figure 15 [2][4] -−50 - dB
GUM 10 S21 2
1S
11 2)1S
22 2)–(–(
-------------------------------------------------------- dB.log=
BFR93AR_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 30 November 2006 4 of 13
NXP Semiconductors BFR93AR
NPN 6 GHz wideband transistor
L1 = L3 = 5 µH choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
Fig 1. Intermodulation distortion and second harmonic MATV test circuit
mbb251
18 Ω
1.5 nF
10 kΩL2
L1
1 nF
75 Ω
input
270 Ω
1 nF
L3
1.5 nF
1 nF
0.68 pF
3.3 pF
DUT
75 Ω
output
+VCC
+VBB
VCE =5V; T
j=25°C.
Fig 2. Power derating curve Fig 3. DC current gain as a function of collector
current
0 50 100 200
400
300
100
0
200
mra702
150
Ptot
(mW)
Tsp (°C)
mcd087
0102030
120
0
40
80
hFE
IC (mA)
BFR93AR_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 30 November 2006 5 of 13
NXP Semiconductors BFR93AR
NPN 6 GHz wideband transistor
IE=i
e= 0 mA; f = 1 MHz; Tj=25°C. VCE = 2 V; f = 500 MHz; Tj=25°C.
Fig 4. Collector capacitance as a function of
collector-base voltage; typical values Fig 5. Transition frequency as a function of collector
current; typical values
VCE = 8 V; f = 500 MHz. VCE = 8 V; f = 1 GHz.
Fig 6. Gain as a function of collector current; typical
values Fig 7. Gain as a function of collector current; typical
values
mbb252
048 16
1
0
0.8
12
0.6
0.4
0.2
Cc
(pF)
VCB (V)
mcd089
01020 40
8
6
2
0
4
30 IC (mA)
(GHz)
fT
mbb255
0
30
20
10
010 20 40
IC (mA)
gain
(dB)
30
MSG
GUM
mbb256
0
30
20
10
010 20 40
30
gain
(dB)
IC (mA)
MSG
GUM
BFR93AR_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 30 November 2006 6 of 13
NXP Semiconductors BFR93AR
NPN 6 GHz wideband transistor
IC= 10 mA; VCE =8V. I
C= 30 mA; VCE =8V.
Fig 8. Gain as a function of frequency; typical values Fig 9. Gain as a function of frequency; typical values
IC= 4 mA; VCE = 8 V; f = 800 MHz; Tamb =25°C. IC= 4 mA; VCE = 8 V; f = 800 MHz; Tamb =25°C.
Fig 10. Circles of constant noise figure; typical values Fig 11. Circles of constant noise figure; typical values
mbb257
50
010 102103104
10
20
30
40
gain
(dB)
f (MHz)
MSG
GUM
Gmax
mbb258
50
010 102103104
10
20
30
40
gain
(dB)
f (MHz)
MSG
GUM
Gmax
mbb253
02040 80
40
20
−20
−40
0
60 GS (mS)
BS
(mS)
2.0 2.5
1.6 NF = 3.5 dB3.0
mbb254
0
0
−10
−20
−30 20 40 60
GS (mS)
BS
(mS)
10
20
30
2.5
3.0
3.5
2.3
NF = 4.0 dB
BFR93AR_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 30 November 2006 7 of 13
NXP Semiconductors BFR93AR
NPN 6 GHz wideband transistor
VCE =8V. V
CE =8V.
Fig 12. Minimum noise figure as a function of collector
current; typical values Fig 13. Minimum noise figure as a function of
frequency; typical values
VCE =8V; V
O= 425 mV (52.6 dBmV);
fp+fq−fr= 793.25 MHz; Tamb =25°C.
Measured in MATV test circuit; see Figure 1.
VCE =8V; V
O= 200 mV (46 dBmV);
fp+fq−fr= 810 MHz; Tamb =25°C.
Measured in MATV test circuit; see Figure 1.
Fig 14. Intermodulation distortion; typical values Fig 15. Second order intermodulation distortion;
typical values
mcd094
4
2
1
0101
3
NF
(dB)
IC (mA)
f = 2 GHz
500 MHz
1 GHz
102
mcd095
4
2
1
0
3
NF
(dB)
f (MHz)
5 mA
10 mA
104
103
102
IC = 30 mA
mbb263
(dB)
01020 40
−40
−65
−45
30
−50
−55
−60
IC (mA)
IMD
mbb264
01020 40
−30
−55
−35
30
−40
−45
−50
IC (mA)
IMD2
(dB)
BFR93AR_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 30 November 2006 8 of 13
NXP Semiconductors BFR93AR
NPN 6 GHz wideband transistor
IC= 30 mA; VCE =8V; Z
O=50Ω;Tamb =25°C.
Fig 16. Common emitter input reflection coefficient (S11)
IC= 30 mA; VCE =8V; T
amb =25°C.
Fig 17. Common emitter forward transmission coefficient (S21)
mbb259
0.2
0.5
1
2
5
10
∞
0.2
0.5
1
2
5
10
0
+ j
− j 500
200
100 MHz
10.2 1052
0.5
1200
800 1000
mbb261
+ϕ
−ϕ
0°
30°
60°
90°
120°
150°
180°
150°
120°
90°
60°
30°
100
10 20 30
200
500
800
1000
1200 MHz
BFR93AR_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 30 November 2006 9 of 13
NXP Semiconductors BFR93AR
NPN 6 GHz wideband transistor
IC= 30 mA; VCE =8V; T
amb =25°C.
Fig 18. Common emitter reverse transmission coefficient (S12)
IC= 30 mA; VCE =8V; Z
O=50Ω;Tamb =25°C.
Fig 19. Common emitter output reflection coefficient (S22)
mbb262
+ϕ
−ϕ
0°
30°
60°
90°
120°
150°
180°
150°
120°
90°
60°
30°
200
1200
0.05 0.1 0.15
100 MHz
500
800
1000
mbb260
0.2
0.5
1
2
5
10
∞
0.2
0.5
1
2
5
10
0
+ j
− j
10.2 10520.5
1200
800
1000 500
200
100 MHz
BFR93AR_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 30 November 2006 10 of 13
NXP Semiconductors BFR93AR
NPN 6 GHz wideband transistor
8. Package outline
Fig 20. Package outline SOT23
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
BFR93AR_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 30 November 2006 11 of 13
NXP Semiconductors BFR93AR
NPN 6 GHz wideband transistor
9. Abbreviations
10. Revision history
Table 8. Abbreviations
Acronym Description
NPN Negative Positive Negative
PNP Positive Negative Positive
RF Radio Frequency
MATV Master Antenna Television
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFR93AR_1 20061130 Product data sheet - -
BFR93AR_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 30 November 2006 12 of 13
NXP Semiconductors BFR93AR
NPN 6 GHz wideband transistor
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BFR93AR
NPN 6 GHz wideband transistor
© NXP B.V. 2006. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 November 2006
Document identifier: BFR93AR_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12 Contact information. . . . . . . . . . . . . . . . . . . . . 12
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
