BFR93AR NPN 6 GHz wideband transistor Rev. 01 -- 30 November 2006 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. 1.2 Features n Very high power gain n Low noise figure n Very low intermodulation distortion 1.3 Applications n RF wideband amplifiers and oscillators 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions open emitter Min Typ Max Unit VCBO collector-base voltage - - 15 V VCEO collector-emitter voltage open base - - 12 V IC collector current - - 35 mA Ptot total power dissipation Tsp 95 C - - 300 mW Cre feedback capacitance IC = 0 mA; VCE = 5 V; f = 1 MHz; - 0.6 - pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz; - 6 - GHz GUM unilateral power gain IC = 30 mA; VCE = 8 V; Tamb = 25 C f = 1 GHz - 13 - dB f = 2 GHz - 7 - dB NF noise figure IC = 5 mA; VCE = 8 V; f = 1 GHz; S = opt; Tamb = 25 C - 1.9 - dB VO output voltage IMD = -60 dB; IC = 30 mA; VCE = 8 V; RL = 75 ; Tamb = 25 C; fp + fq - fr = 793.25 MHz - 425 - mV BFR93AR NXP Semiconductors NPN 6 GHz wideband transistor 2. Pinning information Table 2. Pinning Pin Description 1 emitter 2 base 3 collector Simplified outline Symbol 3 3 2 1 1 2 sym026 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFR93AR - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking Type number Marking code Description BFR93AR *R5 * = p : made in Hong Kong * = w : made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 15 V VCEO collector-emitter voltage open base - 12 V VEBO emitter-base voltage open collector - 2 V IC collector current - 35 mA - 300 mW Tsp 95 C; see Figure 2 Ptot total power dissipation Tstg storage temperature -65 +150 C Tj junction temperature - +175 C [1] Tsp is the temperature at the solder point of the collector pin. BFR93AR_1 Product data sheet [1] (c) NXP B.V. 2006. All rights reserved. Rev. 01 -- 30 November 2006 2 of 13 BFR93AR NXP Semiconductors NPN 6 GHz wideband transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to solder point Tsp 95 C Rth(j-sp) [1] [1] Typ Unit 260 K/W Tsp is the temperature at the solder point of the collector pin. 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current IE = 0 A; VCB = 5 V - - 50 nA hFE DC current gain IC = 30 mA; VCE = 5 V; see Figure 3 40 90 - Cc collector capacitance IE = ie = 0 A; VCB = 5 V; f = 1 MHz; see Figure 4 - 0.7 - pF Ce emitter capacitance IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz - 1.9 - pF Cre feedback capacitance IC = ic = 0 A; VCE = 5 V; f = 1 MHz; Tamb = 25 C - 0.6 - pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz; see Figure 5 4.5 6 - GHz GUM unilateral power gain IC = 30 mA; VCE = 8 V; Tamb = 25 C; see Figure 6 to Figure 9 f = 1 GHz - 13 - dB f = 2 GHz - 7 - dB - 1.9 - dB NF [1] IC = 5 mA; VCE = 8 V; S = opt; Tamb = 25 C; see Figure 12 and Figure 13 noise figure f = 1 GHz f = 2 GHz VO IMD2 [1] - 3 - dB output voltage [2][3] - 425 - mV second-order intermodulation distortion [2][4] - -50 - dB see Figure 15 GUM is the maximum unilateral power gain, assuming S12 is zero and 2 S 21 G UM = 10 log ------------------------------------------------------- dB. 2 2 ( 1 - S 11 ) ( 1 - S 22 ) [2] Measured on the same crystal in a SOT37 package (BFR91A). [3] IMD = -60 dB (DIN 45004B); IC = 30 mA; VCE = 8 V; RL = 75 ; Tamb = 25 C; Vp = VO at IMD = -60 dB; fp = 795.25 MHz; Vq = VO -6 dB at fq = 803.25 MHz; Vr = VO -6 dB at fr = 805.25 MHz; measured at fp + fq - fr = 793.25 MHz [4] IC = 30 mA; VCE = 8 V; RL = 75 ; Tamb = 25 C; Vp = 200 mV at fp = 250 MHz; Vq = 200 mV at fp = 560 MHz; measured at fp + fq = 810 MHz BFR93AR_1 Product data sheet (c) NXP B.V. 2006. All rights reserved. Rev. 01 -- 30 November 2006 3 of 13 BFR93AR NXP Semiconductors NPN 6 GHz wideband transistor 1.5 nF +VBB +VCC 1.5 nF L3 10 k L2 1 nF 1 nF 75 input L1 1 nF 270 75 output DUT 3.3 pF 18 0.68 pF mbb251 L1 = L3 = 5 H choke. L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm. Fig 1. Intermodulation distortion and second harmonic MATV test circuit mra702 400 Ptot (mW) mcd087 120 hFE 300 80 200 40 100 0 0 0 50 100 150 200 0 10 Tsp (C) 20 IC (mA) 30 VCE = 5 V; Tj = 25 C. Fig 2. Power derating curve Fig 3. DC current gain as a function of collector current BFR93AR_1 Product data sheet (c) NXP B.V. 2006. All rights reserved. Rev. 01 -- 30 November 2006 4 of 13 BFR93AR NXP Semiconductors NPN 6 GHz wideband transistor mbb252 1 Cc (pF) mcd089 8 fT (GHz) 0.8 6 0.6 4 0.4 2 0.2 0 0 0 4 8 12 16 VCB (V) 0 10 20 30 40 (mA) IC IE = ie = 0 mA; f = 1 MHz; Tj = 25 C. VCE = 2 V; f = 500 MHz; Tj = 25 C. Fig 4. Collector capacitance as a function of collector-base voltage; typical values Fig 5. Transition frequency as a function of collector current; typical values mbb255 30 gain (dB) mbb256 30 gain (dB) MSG 20 20 MSG GUM GUM 10 10 0 0 10 20 30 IC (mA) 40 VCE = 8 V; f = 500 MHz. 0 0 20 30 IC (mA) 40 VCE = 8 V; f = 1 GHz. Fig 6. Gain as a function of collector current; typical values Fig 7. Gain as a function of collector current; typical values BFR93AR_1 Product data sheet 10 (c) NXP B.V. 2006. All rights reserved. Rev. 01 -- 30 November 2006 5 of 13 BFR93AR NXP Semiconductors NPN 6 GHz wideband transistor mbb257 50 mbb258 50 gain gain (dB) (dB) 40 40 GUM GUM 30 30 MSG MSG 20 20 10 10 Gmax Gmax 0 0 102 10 103 4 f (MHz) 10 10 IC = 10 mA; VCE = 8 V. 102 103 f (MHz) 104 IC = 30 mA; VCE = 8 V. Fig 8. Gain as a function of frequency; typical values Fig 9. Gain as a function of frequency; typical values mbb253 40 BS BS mbb254 30 NF = 4.0 dB (mS) 20 (mS) 20 3.5 10 1.6 2.0 2.5 3.0 3.0 NF = 3.5 dB 0 2.5 2.3 0 -10 -20 -20 -40 -30 0 20 40 60 GS 80 (mS) IC = 4 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 C. Fig 10. Circles of constant noise figure; typical values 0 40 GS (mS) 60 IC = 4 mA; VCE = 8 V; f = 800 MHz; Tamb = 25 C. Fig 11. Circles of constant noise figure; typical values BFR93AR_1 Product data sheet 20 (c) NXP B.V. 2006. All rights reserved. Rev. 01 -- 30 November 2006 6 of 13 BFR93AR NXP Semiconductors NPN 6 GHz wideband transistor mcd094 4 NF (dB) mcd095 4 NF (dB) f = 2 GHz 3 3 1 GHz 500 MHz 2 2 IC = 30 mA 10 mA 1 1 0 1 10 IC (mA) 5 mA 0 102 102 VCE = 8 V. 103 f (MHz) 104 VCE = 8 V. Fig 12. Minimum noise figure as a function of collector current; typical values mbb263 -40 IMD (dB) Fig 13. Minimum noise figure as a function of frequency; typical values mbb264 -30 IMD2 (dB) -45 -35 -50 -40 -55 -45 -60 -50 -65 0 10 20 30 IC (mA) 40 VCE = 8 V; VO = 425 mV (52.6 dBmV); fp + fq - fr = 793.25 MHz; Tamb = 25 C. Measured in MATV test circuit; see Figure 1. Fig 14. Intermodulation distortion; typical values -55 0 20 30 IC (mA) 40 VCE = 8 V; VO = 200 mV (46 dBmV); fp + fq - fr = 810 MHz; Tamb = 25 C. Measured in MATV test circuit; see Figure 1. Fig 15. Second order intermodulation distortion; typical values BFR93AR_1 Product data sheet 10 (c) NXP B.V. 2006. All rights reserved. Rev. 01 -- 30 November 2006 7 of 13 BFR93AR NXP Semiconductors NPN 6 GHz wideband transistor 1 0.5 2 0.2 5 0.5 1200 0.2 800 +j 0 10 1000 1 2 5 10 500 -j 10 200 0.2 5 100 MHz 2 0.5 mbb259 1 IC = 30 mA; VCE = 8 V; ZO = 50 ;Tamb = 25 C. Fig 16. Common emitter input reflection coefficient (S11) 90 120 60 100 200 150 30 500 1000 800 1200 MHz 180 + 10 20 30 0 - 30 150 60 120 90 mbb261 IC = 30 mA; VCE = 8 V; Tamb = 25 C. Fig 17. Common emitter forward transmission coefficient (S21) BFR93AR_1 Product data sheet (c) NXP B.V. 2006. All rights reserved. Rev. 01 -- 30 November 2006 8 of 13 BFR93AR NXP Semiconductors NPN 6 GHz wideband transistor 90 120 60 1200 1000 800 150 30 500 100 MHz 200 + 0.05 180 0.1 0.15 0 - 30 150 60 120 mbb262 90 IC = 30 mA; VCE = 8 V; Tamb = 25 C. Fig 18. Common emitter reverse transmission coefficient (S12) 1 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 10 1000 800 500 200 1200 -j 10 5 100 MHz 0.2 2 0.5 1 mbb260 IC = 30 mA; VCE = 8 V; ZO = 50 ;Tamb = 25 C. Fig 19. Common emitter output reflection coefficient (S22) BFR93AR_1 Product data sheet (c) NXP B.V. 2006. All rights reserved. Rev. 01 -- 30 November 2006 9 of 13 BFR93AR NXP Semiconductors NPN 6 GHz wideband transistor 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC SOT23 JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 20. Package outline SOT23 BFR93AR_1 Product data sheet (c) NXP B.V. 2006. All rights reserved. Rev. 01 -- 30 November 2006 10 of 13 BFR93AR NXP Semiconductors NPN 6 GHz wideband transistor 9. Abbreviations Table 8. Abbreviations Acronym Description NPN Negative Positive Negative PNP Positive Negative Positive RF Radio Frequency MATV Master Antenna Television 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BFR93AR_1 20061130 Product data sheet - - BFR93AR_1 Product data sheet (c) NXP B.V. 2006. All rights reserved. Rev. 01 -- 30 November 2006 11 of 13 BFR93AR NXP Semiconductors NPN 6 GHz wideband transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com BFR93AR_1 Product data sheet (c) NXP B.V. 2006. All rights reserved. Rev. 01 -- 30 November 2006 12 of 13 BFR93AR NXP Semiconductors NPN 6 GHz wideband transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 30 November 2006 Document identifier: BFR93AR_1