Super323 SOT323 NPN SILICON
POWER(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
* 500mW POWER DISSIPATION
*I
C CONT 1.25A
* 3A Peak Pulse Current
* Excellent HFE Characteristics Up to 3A (pulsed)
* Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
* Corded telecoms.
* Boost functions in DC-DC converters
* Motor driver functions
DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat)
ZUMT618 ZUMT718 T62 125m at1.25A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current** ICM 4A
Continuous Collector Current IC1.25 A
Base Current IB500 mA
Power Dissipation at Tamb
=25°C Ptot 385 †
500 ‡ mW
Operating and Storage Temperature
Range Tj:Tstg -55 to +150 °C
Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT618
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V(BR)CBO 20 V IC= 100µA
Collector-Emitter
Breakdown Voltage V(BR)CEO 20 V IC= 10mA*
Emitter-Base
Breakdown Voltage V(BR)EBO 5V
IE= 100µA
Collector Cut-Off
Current ICBO 10 nA VCB= 16V
Emitter Cut-Off
Current IEBO 10 nA VEB= 4V
Collector Emitter
Cut-Off Current ICES 10 nA VCES= 16V
Collector-Emitter
Saturation Voltage VCE(sat) 16.5
40
80
140
155
25
60
115
200
250
mV
mV
mV
mV
mV
IC= 100mA, IB=10mA*
IC= 250mA, IB= 10mA*
IC= 500mA, IB=10mA*
IC= 1A, IB=20mA*
IC= 1.25A, IB=50mA*
Base-Emitter
Saturation Voltage VBE(sat) 955 1100 mV IC= 1.25A, IB=50mA*
Base-Emitter
Turn-On Voltage VBE(on) 840 1100 mV IC= 1.25A, VCE= 2V*
Static Forward
Current Transfer
Ratio
hFE 200
300
200
100
40
20
420
450
380
300
180
60
IC= 10mA, VCE
= 2V*
IC= 100mA, VCE= 2V*
IC= 500mA, VCE=2V*
IC= 1A, VCE=2 V*
IC= 2A, VCE=2V*
IC=4A, VCE= 2V*
Transition
Frequency fT210 MHz IC= 50mA, VCE
=10V
f= 100MHz
Output Capacitance Cobo 10 pF VCB= 10V, f=1MHz
Turn-On Time t(on) 50 ns VCC=10 V, IC=1A
IB1=IB2=100mA
Turn-Off Time t(off) 275 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
ZUMT618
ZUMT618
1m
1m
1m 100m 100
1m
1m
IC- Collector Current (A)
VCE(sat) v IC
0
VCE(sat) - (V)
IC/IB=10
IC/IB=50
IC/IB=100
+25°C
-55°C
hFE - Typical Gain
+100°C
0
IC- Collector Current (A)
hFE v IC
VBE(on) - (V)
0
IC- Collector Current (A)
VBE(on) v IC
+100°C
+150°C
VCE(sat) - (V)
+25°C
0
IC- Collector Current (A)
VCE(sat) v IC
+100°C
+150°C
VBE(sat) - (V)
+25°C
0
IC- Collector Current (A)
VBE(sat) v IC
1s
100ms
IC- Collector Current (A)
10
DC
10m
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100µs
+25°C
-55°C
IC/IB=50
VCE=2V
-55°C
IC/IB=50
+25°C
+150°C
+100°C
-55°C
10m 100m 1 10
0.1
0.2
0.3
0.4
0.1
0.2
0.3
0.4
10m 100m 1 10
10m 100m 1 10 10m 100m 1 10
10m 100m 1 10
0.4
0.6
0.8
1.0
0.2
200
400
600
0.2
0.4
0.6
0.8
1.0
110
100m
1
TYPICAL CHARACTERISTICS