Super323 SOT323 NPN SILICON
POWER(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
* 500mW POWER DISSIPATION
*I
C CONT 1.25A
* 3A Peak Pulse Current
* Excellent HFE Characteristics Up to 3A (pulsed)
* Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
* Corded telecoms.
* Boost functions in DC-DC converters
* Motor driver functions
DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat)
ZUMT618 ZUMT718 T62 125mΩ at1.25A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current** ICM 4A
Continuous Collector Current IC1.25 A
Base Current IB500 mA
Power Dissipation at Tamb
=25°C Ptot 385 †
500 ‡ mW
Operating and Storage Temperature
Range Tj:Tstg -55 to +150 °C
† Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT618