Notes through are on page 11
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IRFB38N20D
IRFS38N20D
IRFSL38N20D
SMPS MOSFET
HEXFET® Power MOSFET
VDSS RDS(on) max ID
200V 0.054Ω44A
D2Pak
IRFS38N20D
TO-220AB
IRFB38N20D TO-262
IRFSL38N20D
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 44
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 32 A
IDM Pulsed Drain Current 180
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 320
Linear Derating Factor 2.1 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 9.5 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
lHigh frequency DC-DC converters
Benefits
Applications
lLow Gate-to-Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.47
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient––– 62
RθJA Junction-to-Ambient––– 40
PD - 94358A
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Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 17 ––– ––– S VDS = 50V, ID = 26A
QgTotal Gate Charge –– – 6 0 91 I D = 26A
Qgs Gate-to-Source Charge ––– 17 25 nC VDS = 100V
Qgd Gate-to-Drain ("Miller") Charge ––– 28 42 VGS = 10V,
td(on) Turn-On Delay Time ––– 16 ––– VDD = 100V
trRise Time ––– 95 ––– I D = 26A
td(off) Turn-Off Delay Time ––– 29 ––– RG = 2.5Ω
tfFall Time ––– 47 ––– VGS = 10V
Ciss Input Capacitance ––– 2900 ––– V GS = 0V
Coss Output Capacitance ––– 450 ––– V DS = 25V
Crss Reverse Transfer Capacitance ––– 73 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 3550 ––– V GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 180 ––– V GS = 0V, VDS = 160V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 380 ––– VGS = 0V, VDS = 0V to 160V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy ––– 460 mJ
IAR Avalanche Current––– 26 A
EAR Repetitive Avalanche Energy––– 32 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 26A, VGS = 0V
trr Reverse Recovery Time ––– 160 2 40 nS TJ = 25°C, IF = 26A
Qrr Reverse RecoveryCharge ––– 1.3 2.0 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
44
180 A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.22 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.054 ΩVGS = 10V, ID = 26A
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
––– ––– 25 µA VDS = 200V, VGS = 0V
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V
IGSS
IDSS Drain-to-Source Leakage Current
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Tem
p
erature
(
C
)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
44A
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
5.0V
300µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
5.0V
300µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
5.0 7.0 9.0 11.0 13.0 15.0
VGS, Gate-to-Source Voltage (V)
1.00
10.00
100.00
1000.00
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
VDS = 15V
300µs PULSE WIDTH
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100 1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + C
gd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + C
gd
0 10203040506070
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
VDS= 160V
VDS= 100V
ID= 26A
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-toDrain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
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Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Tem
p
erature
(
C
)
I , Drain Current (A)
°
C
D
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
180
360
540
720
900
Startin
g
T
j
, Junction Tem
p
erature
(
C
)
E , Single Pulse Avalanche Energy (mJ)
AS
°
ID
TOP
BOTTOM
11A
19A
26A
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
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LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32
(
.052
)
1.22
(
.048
)
3X 0.55
(
.022
)
0.46
(
.018
)
2.92
(
.115
)
2.64
(
.104
)
4.69
(
.185
)
4.20
(
.165
)
3X 0.93
(
.037
)
0.69
(
.027
)
4.06
(
.160
)
3.55
(
.140
)
1.15
(
.045
)
MIN
6.4 7
(
.255
)
6.1 0
(
.240
)
3.78
(
.149
)
3.54
(
.139
)
- A -
10.54
(
.415
)
10.29
(
.405
)
2.87
(
.113
)
2.62
(
.103
)
15.24
(
.600
)
14.84
(
.584
)
14.09
(
.555
)
13.47
(
.530
)
3X 1.40
(
.055
)
1.15
(
.045
)
2.54
(
.100
)
2X
0.36
(
.014
)
M B A M
4
1 2 3
NOTES:
1 D IMEN S IO N IN G & TOLE RA NC IN G P E R AN S I Y 14 .5M , 1982. 3 OU TLIN E C O N FOR M S TO JE D EC O U TLINE TO-2 20A B.
2 CONT ROL L ING DIM EN SIO N : IN CH 4 HEATSINK & L EAD MEASU REMEN TS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
LO T C ODE 1789
ASSEMBLED ON WW 19, 1997
I N THE ASSEMBLY LI NE "C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART N UMBER
DATE C OD E
Y EAR 7 = 199 7
WEEK 19
LI NE C
EXAMP LE: TH I S IS AN IRF1010
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D2Pak Package Outline
D2Pak Part Marking Information
10.16 (.400)
R EF.
6.47 (.255 )
6.18 (.243 )
2.61 (.103 )
2.32 (.091 )
8.89 (.350)
REF.
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5 .28 (.208)
4 .78 (.188)
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15 .49 (.610)
14 .73 (.580)
3X 0.93 (.037)
0.69 (.027)
5 .08 (.200)
3X 1.40 (.055)
1.14 (.045)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MAX .
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEA D DIMENSIONS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0.2 5 ( .0 10) M B A M MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350 )
17 .78 (.700)
3.81 (.150)
2.08 (.082)
2 X
LEAD ASSIGNMENTS
1 - GAT E
2 - DRAIN
3 - SOURCE
2.54 (.100)
2X
LO T C ODE 8024
ASSEM BLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART N UMBER
DATE C OD E
YEAR 0 = 2000
WEEK 02
LI NE L
F530S
THIS IS AN IRF53 0S WITH
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TO-262 Par t Mar king Information
TO-262 Package Outline
EXAMP LE: TH I S IS AN I R L 3103L
LO T C ODE 1789
ASSEMBLY
PART NUMBER
DATE C ODE
WEEK 19
LINE C
LOT CODE
YEAR 7 = 1997
ASSEM BLED O N WW 19, 1997
I N THE ASSEMBLY LINE "C" LOGO
RECTIFIER
INTERNATIONAL
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Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 1.3mH
RG = 25Ω, IAS = 26A.
ISD ≤ 26A, di/dt ≤ 390A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
This is only applied to TO-220AB package.
This is applied to D2Pak, when mounted on 1" square PCB
(FR-4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
D2Pak Tape & Reel Information
3
4
4
TRR
FEED D IRE CTION
1 .85 (.073)
1 .65 (.065)
1 .60 (.063)
1 .50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532 )
12.80 (.504 )
330.00
(14.173)
MAX.
2 7.40 (1.079 )
23.90 (.941)
60.00 (2.362)
MIN .
30.40 (1.197)
MAX.
26 .40 (1.03 9)
24.40 (.961)
NO TES :
1. CO MFORMS TO EIA-418.
2. CO NTROLLING DIMENSIO N: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] (IRFB38N20D),
& Industrial (IRFS/SL38N20D) market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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TO-220 package is not recommended for Surface Mount Application.
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