1SS406
2004-05-06
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS406
High Speed Switching Application
Low forward voltage : VF (3) = 0.50V (typ.)
Low reverse current : IR= 0.5µA (max)
Small total capacitance : CT = 3.9pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse Voltage VRM 25 V
Reverse voltage VR 20 V
Maximum (peak) forward current IFM 100 mA
Average forward current IO 50 mA
Surge current (10ms) IFSM 1 A
Power dissipation P * 200 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
*: Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
VF (1) ― I
F = 1mA ― 0.33 ―
VF (2) ― I
F = 5mA ― 0.38 ―
Forward voltage
VF (3) ― I
F = 50mA ― 0.50 0.55
V
Reverse current IR ― V
R = 20V ― ― 0.5
µA
Total capacitance CT ― V
R = 0, f = 1MHz ― 3.9 ― pF
Equivalent Circuit (Top View) Marking
JEDEC ―
JEITA ―
TOSHIBA 1-1E1A
Weight: 0.004g(Typ.)
Unit: mm
A7
USC
1SS406
2004-05-06
2
1SS406
2004-05-06
3
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030619EAA
RESTRICTIONS ON PRODUCT USE
