PXT3904,115 - NXP - Product.Network

DATA SH EET

Product speciﬁcation

Supersedes data of 1999 Apr 14 2004 Nov 22

DISCRETE SEMICONDUCTORS

PXT3904

NPN switching transistor

ook, halfpage

M3D109

2004 Nov 22 2

Philips Semiconductors Product speciﬁcation

NPN switching transistor PXT3904

FEATURES

•Low current (max. 100 mA)

•Low voltage (max. 40 V).

APPLICATIONS

•High-speed switching.

DESCRIPTION

NPN switching transistor in a SOT89 plastic package.

PNP complement: PXT3906.

MARKING

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

PINNING

TYPE NUMBER MARKING CODE(1)

PXT3904 *1A

PIN DESCRIPTION

1 emitter

2 collector

3 base

321

sym042

Fig.1 Simplified outline (SOT89) and symbol.

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PXT3904 SC-62 plastic surface mounted package; collector pad for good heat

transfer; 3 leads SOT89

2004 Nov 22 3

Philips Semiconductors Product speciﬁcation

NPN switching transistor PXT3904

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.

2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.

3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −60 V

VCEO collector-emitter voltage open base −40 V

VEBO emitter-base voltage open collector −6V

ICcollector current (DC) −100 mA

ICM peak collector current −200 mA

IBM peak base current −100 mA

Ptot total power dissipation Tamb ≤25 °C

note 1 −0.45 W

note 2 −0.65 W

note 3 −0.8 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

Tamb (°C)

−75 17512525 75−25

006aaa242

400

600

200

800

1000

Ptot

(mW)

(1)

(2)

(3)

Fig.2 Power derating curves.

(1) FR4 PCB; 6 cm2 mounting pad for collector.

(2) FR4 PCB; 1 cm2 mounting pad for collector.

(3) FR4 PCB; standard footprint.

2004 Nov 22 4

Philips Semiconductors Product speciﬁcation

NPN switching transistor PXT3904

THERMAL CHARACTERISTICS

Notes

1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.

2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.

3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to

ambient in free air

note 1 278 K/W

note 2 192 K/W

note 3 156 K/W

Rth(j-s) thermal resistance from junction to

soldering point 80 K/W

006aaa239

10−51010−2

10−4102

10−1tp (s)

10−3103

102

103

Zth

(K/W)

(6)

(7)

(8)

(10)

(1)

(5)

(4)

(3)

(9)

(2)

Fig.3 Transient thermal impedance as a function of pulse time; typical values.

(1) δ=1.

(2) δ= 0.75. (3) δ= 0.5.

(4) δ= 0.33. (5) δ= 0.2.

(6) δ= 0.1. (7) δ= 0.05.

(8) δ= 0.02. (9) δ= 0.01.

(10) δ=0.

Mounted on FR4 printed-circuit board; standard footprint.

2004 Nov 22 5

Philips Semiconductors Product speciﬁcation

NPN switching transistor PXT3904

006aaa240

10−51010−2

10−4102

10−1tp (s)

10−3103

102

103

Zth

(K/W)

(6)

(7)

(8)

(10)

(5)

(4)

(3)

(1)

(9)

(2)

Fig.4 Transient thermal impedance as a function of pulse time; typical values.

(1) δ=1.

(2) δ= 0.75. (3) δ= 0.5.

(4) δ= 0.33. (5) δ= 0.2.

(6) δ= 0.1. (7) δ= 0.05.

(8) δ= 0.02. (9) δ= 0.01.

(10) δ=0.

Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.

006aaa241

10−51010−2

10−4102

10−1tp (s)

10−3103

102

103

Zth

(K/W)

(6)

(7)

(8)

(10)

(5)

(4)

(3)

(1)

(2)

(9)

Fig.5 Transient thermal impedance as a function of pulse time; typical values.

(1) δ=1.

(2) δ= 0.75. (3) δ= 0.5.

(4) δ= 0.33. (5) δ= 0.2.

(6) δ= 0.1. (7) δ= 0.05.

(8) δ= 0.02. (9) δ= 0.01.

(10) δ=0.

Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.

2004 Nov 22 6

Philips Semiconductors Product speciﬁcation

NPN switching transistor PXT3904

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector-base cut-off current IE= 0 A; VCB =30V −50 nA

IEBO emitter-base cut-off current IC= 0 A; VEB =6V −50 nA

hFE DC current gain VCE = 1 V; (see Fig.6)

IC= 0.1 mA 60 −

IC= 1 mA 80 −

IC= 10 mA 100 300

IC=50mA 60 −

IC= 100 mA 30 −

VCEsat collector-emitter saturation voltage IC= 10 mA; IB=1mA −200 mV

IC= 50 mA; IB=5mA −200 mV

VBEsat base-emitter saturation voltage IC= 10 mA; IB= 1 mA 650 850 mV

IC= 50 mA; IB=5mA −950 mV

Cccollector capacitance IE=i

e= 0 A; VCB = 5 V; f = 1 MHz −4pF

Ceemitter capacitance IC=i

c= 0 A; VEB = 500 mV;

f = 1 MHz −8pF

fTtransition frequency IC= 10 mA; VCE = 20 V; f = 100 MHz 300 −MHz

F noise ﬁgure IC= 100 µA; VCE =5V; R

S=1kΩ;

f = 10 Hz to 15.7 kHz −5dB

Switching times (between 10% and 90% levels); (see Fig.7)

ton turn-on time ICon = 10 mA; IBon = 1 mA;

IBoff =−1mA −65 ns

tddelay time −35 ns

trrise time −35 ns

toff turn-off time −240 ns

tsstorage time −200 ns

tffall time −50 ns

2004 Nov 22 7

Philips Semiconductors Product speciﬁcation

NPN switching transistor PXT3904

Fig.6 DC current gain; typical values.

handbook, full pagewidth

160

hFE

120

MGD834

10−210−11IC (mA)

10 102103

VCE =1V.

handbook, full pagewidth

DUT

MLB826

RB(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Fig.7 Test circuit for switching times.

Vi= 5 V; T = 500 µs; tp=10µs; tr=t

f≤3 ns.

R1 = 56 Ω; R2 = 2.5 kΩ; RB= 3.9 kΩ; RC= 270 Ω.

VBB = 1.9 V; VCC =−3V.

Oscilloscope: input impedance Zi=50Ω.

2004 Nov 22 8

Philips Semiconductors Product speciﬁcation

NPN switching transistor PXT3904

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 99-09-13

04-08-03

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

2004 Nov 22 9

Philips Semiconductors Product speciﬁcation

NPN switching transistor PXT3904

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratany otherconditionsabove thosegivenin the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythat suchapplicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusing orsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Philips Semiconductors – a world wide company

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Printed in The Netherlands R75/04/pp10 Date of release: 2004 Nov 22 Document order number: 9397 750 13896