Data Sheet CMPFJ310 Central SURFACE MOUNT Semiconductor Corp. SILICON N-CHANNEL JFET 145 Adams Ave., Hauppauge, NY 11788 USA Phone (516) 435-1110 FAX (516) 435-1824 SOT-23 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR CMPFJ310 type is a epoxy molded N-Channel Silicon Junction Field Effect Transistor manufactured in an SOT-23 case, designed for VHF/UHF amplifier applications. Marking code is 6T. MAXIMUM RATINGS. (Ta =25C) SYMBOL UNITS Drain-Source Voltage Vos 25 V Gate-Source Voltage Ves 25 V Gate Current fe 10 mA Power Dissipation Pp 350 mw Operating and Storage Junction Temperature TyTstg -65 to +150 C Thermal Resistance Oya 357 Cc/w ELECTRICAL CHARACTERISTICS (Ta =25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS loss V6s=15V 1.0 nA Vetsts Vos =15V, Ta =125C 1.0 HA lpss Vps=10V, Ves =0 24 60 mA BVGss Ig =1.0pA 25 Vv VGSloff) Vps=10V, Ip =1.0nA 2.0 6.5 . Vv VGsif) Ig =1.0mA, Vos =0 1.0 V lYs| Vps=10V, Ip =10mA, f=1.0kHz 8.0 18 mmhos lYos| Vps=10V, Ip=10mA, f=1.0kHz 250 pmhos Ciss VGs=10V, Vps=0, f=1.0MHz 5.0 pF Crss Vgs=10V, Vpg=0, f=1.0MHz 2.5 pF Ep Vps=10V, Ip =10mA, f= 100Hz 10 nv/ VHz All Dimensions in mm. 0.085 0.115 : 1 4 o | t jo 6 X 1.2 | MAX 1.3 y 0.07 5 : 0.13 0.35 0.935 0.45 1.095 LEAD CODE: MARKING CODE: 6T 1) SOURCE 2) DRAIN 3) GATE