FUJITSU MICROELECTRONICS DATA SHEET DS04-27264-2E ASSP for Power Management Applications (Rechargeable Battery) DC/DC converter IC for Charging Li-ion battery MB39A134 DESCRIPTION The MB39A134 is a DC/DC converter IC for charging Li-ion battery, which is suitable for down conversion, and uses pulse width modulation (PWM) for controlling the charge voltage and current independently. MB39A134 has a AC adapter detection comparator independent of the DC/DC converter controller, and can control the source of power supply to a system. It supports a wide input voltage range, enables low current consumption in standby mode, and can control the charge voltage and charge current with high precision, which is perfect for the built-in Li-ion battery charger used in devices such as notebook PC. FEATURES * * * * * * * * * * * * Support 2, 3 and 4 Cell Battery Pack Built-in two constant current control loops Built-in AC adapter detection function (ACOK pin) Charge voltage accuracy : 0.7% (Ta = -10 C to +85 C) Built-in charging voltage control without external setting resistor (4.20 V/Cell or 4.10 V/Cell) Adjustable to charge voltage with external resistor Built-in two high accurate current detection amplifiers (1%) (At input voltage difference 100 mV) (5%) (At input voltage difference 20 mV) Input offset voltage : 0 mV (Current Amp1) : +3 mV (Current Amp2) Built-in Charging Current Control without external resistor (RS = 20 m : 2.85 A) Adjustable charging current with external resistor Setting of switching frequency using an external resistor (Frequency setting capacitor integrated) : 100 kHz to 2 MHz Built-in under voltage lockout protection In standby mode (Icc = 6 A Typ) , only AC adapter detection function is operated Built-in VH regulator for reducing Qg loss of P-ch MOS FET Package : TSSOP-24 APPLICATIONS * Built-in charger for Notebook PC * Handy terminal device etc. Copyright(c)2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2008.9 MB39A134 PIN ASSIGNMENT (TOP VIEW) -INC1 1 24 +INC1 OUTC1 2 23 GND ADJ1 3 22 CVM COMP1 4 21 VCC ACOK 5 20 OUT VREF 6 19 VH ACIN 7 18 VIN COMP2 8 17 RT ADJ2 9 16 ADJ3 OUTC2 10 15 COMP3 CELLS 11 14 CTL BATT 12 13 +INC2 (FPT-24P-M08) 2 DS04-27264-2E MB39A134 PIN DESCRIPTIONS Pin No. Pin Name I/O Description 1 -INC1 I Current detection amplifier (Current Amp1) inverted input pin. 2 OUTC1 O Current detection amplifier (Current Amp1) output pin. 3 ADJ1 I Error amplifier (Error Amp1) non-inverted input pin. 4 COMP1 O Error amplifier (Error Amp1) output pin. 5 ACOK O AC adapter voltage detection block (AC Comp.) output pin. ACIN = H : ACOK = Lo-Z, ACIN = L : ACOK = Hi-Z 6 VREF O Reference voltage output pin. 7 ACIN I AC adapter voltage detection block (AC Comp.) input pin. 8 COMP2 O Error amplifier (Error Amp2) output pin. 9 ADJ2 I Charge current control block setting input pin. ADJ2 pin "GND to 4.4 V" : Charge current control block output = ADJ2 pin voltage ADJ2 pin "4.6 V to VREF" : Charge current control block output = 1.5 V 10 OUTC2 O Current detection amplifier (Current Amp2) output pin. 11 CELLS I Charge voltage setting switch pin (2 or 3 or 4 Cells). CELLS = VREF: 4 Cells, CELLS = GND: 3 Cells, CELLS = OPEN: 2 Cells 12 BATT I Current detection amplifier (Current Amp2) inverted input pin. Battery voltage input pin. 13 +INC2 I Current detection amplifier (Current Amp2) non-inverted input pin. 14 CTL I Power supply control pin. Setting the CTL pin at "H" level places the DC/DC converter IC in the operating mode. Setting the CTL pin at "L" level places the DC/DC converter IC in the standby mode. 15 COMP3 O Error amplifier (Error Amp3) output pin. Charge voltage control block setting input pin. ADJ3 pin "GND to 0.2 V" : Charge voltage setting 4.10 V/Cell ADJ3 pin "0.4 V to 4.4 V" : Charge voltage setting 2 x VADJ3 pin voltage/Cell ADJ3 pin "4.6 V to VREF" : Charge voltage setting 4.20 V/Cell 16 ADJ3 I 17 RT Triangular wAVe oscillation frequency setting resistor connection pin. 18 VIN Power supply pin for ACOK function block. 19 VH O Power supply pin for FET drive circuit (VH = VCC - 6 V) 20 OUT O External FET gate drive pin. 21 VCC Power supply pin for reference voltage , control circuit, and output circuit. 22 CVM O Constant voltage control state detection block (CV Comp.) output pin. 23 GND Ground pin. 24 +INC1 I DS04-27264-2E Current detection amplifier (Current Amp1) non-inverted input pin. 3 MB39A134 BLOCK DIAGRAM TO SYSTEM LOAD CVM ACIN ACOK 22 7 VIN 18 <CV Comp.> - OUTC1 <AC - Comp.> + 2 + 24 1 + 25 VCC <Error Amp1> - <PWM Comp.> + + + - -2.5 V -1.5 V + -INC1 3 ADJ1 OUTC2 <Current Amp2> +INC2 13 12 + 25 <Error Amp2> - 9 B Io VCC-6 V 2.85 A VO 19 VH RS 20 m Battery VCC UVLO CT Charge Current Control ADJ2 A OUT <OSC> + 3 mV BATT 20 Drive Bias Voltage <VH> 10 A B 21 <Current Amp1> +INC1 VIN 5 VREF UVLO 16 ADJ3 VREF : 4.20 V/Cell GND : 4.10 V/Cell VO REFIN Control + VCC VCC <VR1> <REF> 1.26 V VR1 11 OPEN : 2Cells GND : 3Cells VREF : 4Cells 4 <Error Amp3> - CELLS 4 8 COMP1 15 COMP2 17 COMP3 RT <CTL> 14 5.0 V ON/OFF VREF 6 VREF 23 CTL ( 24-pin ) GND DS04-27264-2E MB39A134 ABSOLUTE MAXIMUM RATINGS Parameter Power supply voltage Symbol VvCC Condition Rating Unit Min Max VCC, VIN pin - 0.3 + 28 V VCC, VIN pin, t 10 s - 0.3 + 32 V OUT pin - 60 + 60 mA Output current IOUT OUT pin Duty 5% (t = 1/fosc x Duty) - 700 + 700 mA CLT pin input voltage VCTL CTL pin - 0.3 + 28 V VINE ADJ1, ADJ2, ADJ3, CELLS, ACIN pin - 0.3 VVREF + 0.3 V VINC -INC1, +INC1, BATT, +INC2 pin - 0.3 + 28 V Ta + 25 C 1282*1,*2 mW Ta = + 85 C 512*1,*2 mW - 55 + 125 C Input voltage Power dissipation Storage temperature PD TSTG *1 : See the diagram of " TYPICAL CHARACTERISTICS . Maximum Power Dissipation vs. Operating Ambient Temperature", for the package power dissipation of Ta from + 25 C to + 85 C. *2 : When IC is mounted on a 10x10 cm two-layer square epoxy board. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. DS04-27264-2E 5 MB39A134 RECOMMENDED OPERATING CONDITIONS Parameter Symbol Condition Value Unit Min Typ Max 8 25 V Power supply voltage VVCC Reference voltage output current IVREF -1 0 mA IVH 0 30 mA 0 VVREF - 1.5 V 4.6 VVREF V 0 4.4 V 0.2 V VVREF V VH pin output current VCC, VIN pin ADJ1 pin ADJ2 pin (internal reference voltage setting) VINE Input voltage ADJ2 pin (external voltage setting) ADJ3 pin (internal reference voltage setting) ADJ3 pin (external voltage setting) 0 4.6 0.4 4.4 V CELLS pin 0 VVREF V VINC +INC1, +INC2, -INC1, BATT pin 0 VVCC V ACIN pin input voltage VACIN 0 5 V ACOK pin output voltage VACOK 0 25 V ACOK pin output current IACOK 0 1 mA CTL pin input voltage VCTL 0 25 V OUT pin -45 + 45 mA Output current IOUT OUT pin Duty 5% (t = 1 / fosc x Duty) -600 + 600 mA Switching frequency fOSC 100 500 2000 kHz Timing resistor RRT 8.2 33 180 k VH pin capacitor CVH 0.1 1.0 F 0.1 1.0 F -30 + 25 + 85 C Reference voltage output capacitor Operating ambient temperature CVREF Ta RT pin VREF pin WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their representatives beforehand. 6 DS04-27264-2E MB39A134 ELECTRICAL CHARACTERISTICS Symbol Pin No. VVREF1 6 VVREF2 6 Input stability VREF Line Load stability Short-circuit output current Parameter 5.000 5.037 V Ta = -10 C to +85 C 4.950 5.000 5.050 V 6 VCC pin = 8 V to 25 V 3 10 mV VREF Load 6 VREF pin = 0 mA to -1 mA 1 10 mV Ios 6 VREF pin = 1 V -25 -12 -6 mA fOSC 20 RT pin = 33 k 450 500 550 kHz df/fdT 20 Ta = -30 C to +85 C 1* % Input offset voltage VIO 2, 3 COMP1 pin = 2 V 1 5 mV Input bias voltage IADJ1 3 -100 nA Transconductance Gm 15 20* A/V Threshold voltage VTH1 10 1.5* V Transconductance Gm 15 20* A/V VTH1 12 COMP3 pin = 2 V, Ta = +25 C ADJ3 pin = VREF pin (4.20 V/Cell setting) -0.5 0 + 0.5 % VTH2 12 COMP3 pin = 2 V, Ta = -10 C to +85 C, ADJ3 pin = VREF pin (4.20 V/Cell setting) -0.7 0 + 0.7 % VTH3 12 COMP3 pin = 2 V, Ta = +25 C ADJ3 pin = GND, (4.10 V/Cell setting) -0.6 0 + 0.6 % 12 COMP3 pin = 2 V, Ta = - 10 C to +85 C ADJ3 pin = GND, (4.10 V/Cell setting) -0.8 0 + 0.8 % Switching Triangular frequency Wave Oscillator Frequency Block temperature [OSC] variation Error Amplifier Block [Error Amp1] Error Amplifier Block [Error Amp2] Error Amplifier Block [Error Amp3] 4.963 Threshold voltage Reference Voltage Block [REF] (Ta = +25 C, VCC pin = 19 V, VREF pin = 0 mA) Value Condition Unit Min Typ Max Threshold voltage accuracy VTH4 ADJ1 pin = 0 V ADJ2 pin = VREF pin (Continued) DS04-27264-2E 7 MB39A134 Parameter Error Amplifier Block [Error Amp3] Input current Transconductance Symbol Pin No. IBATTH1 12 ADJ3 pin = CELLS pin = VREF pin BATT pin = 16.8 V 25.2 38 A IBATTL 12 VCC pin = 0 V, BATT pin = 16.8 V 0 1 A Gm 15 30* A/V I+INCH 13, 24 +INC1 pin = +INC2 pin = 3 V to VCC pin, Vin = -100 mV 20 30 A I-INCH 1 +INC1 pin = 3 V to VCC pin, Vin = -100 mV 0.1 0.2 A I+INCL 13, 24 +INC1 pin = +INC2 pin = 0.1 V, Vin = -100 mV -225 -150 A I-INCL 1 +INC1 pin = +INC2 pin = 0.1 V, Vin = -100 mV -255 -170 A VOFF1 2 +INC1 pin = 3 V to VCC pin -1 0 1 mV VOFF2 10 +INC2 pin = 3 V to VCC pin 2 3 4 mV VOFF3 10 +INC2 pin = 0 V to 3 V 1 3 5 mV VCM 2, 10 0 Vvcc V AV 2, 10 24.5 25.0 25.5 V/V BW 2, 10 AV = 0 dB 2* MHz Input current Input offset voltage Current Detection Common Amplifier Block mode input [Current Amp1, voltage range Current Amp2] Voltage gain Frequency band width Output voltage Output source current Output sink current PWM Comp. Block [PWM Comp.] Threshold voltage (Ta = +25 C, VCC pin = 19 V, VREF pin = 0 mA) Value Condition Unit Min Typ Max +INC1 pin = +INC2 pin = 3 V to VCC pin, Vin = -100 mV VOUTCH1 2 4.7 4.9 V VOUTCH2 10 4.5 4.7 V VOUTCL 2, 10 50 75 100 mV ISOURCE 2, 10 OUTC1 pin = OUTC2 pin = 2 V -2 -1 mA ISINK 2, 10 OUTC1 pin = OUTC2 pin = 2 V 150 300 A VTL 20 Duty cycle = 0% 1.4 1.5 V VTH 20 Duty cycle = 100% 2.5 2.6 V (Continued) 8 DS04-27264-2E MB39A134 Symbol Pin No. ISOURCE 20 OUT pin = 13 V, Duty 5% (t = 1/fosc x Duty) -400* mA Output sink current ISINK 20 OUT pin = 19V, Duty 5% (t = 1/fosc x Duty) 400* mA Output ON resistance ROH ROL 20 OUT pin = -45 mA 6.5 9.8 20 OUT pin = 45 mA 5.0 7.5 Rise time tr1 20 OUT pin = 3300 pF 50* ns Fall time tf1 20 OUT pin = 3300 pF 50* ns CTL input voltage VON VOFF ICTLH ICTLL 14 IC operation mode 2 25 V 14 IC standby mode 0 0.8 V 14 CTL pin = 5 V 100 150 A 14 CTL pin = 0 V 0 1 A VH 19 VCC pin = 8 V to 25 V, VH pin = 0 to 30 mA VTLH 21 VCC pin = 6.0 6.2 6.4 V VTHL 21 VCC pin = 5.0 5.2 5.4 V VH 21 VCC pin 1.0* V VTLH 6 VREF pin = 2.6 2.8 3.0 V VTHL 6 VREF pin = 2.4 2.6 2.8 V Hysteresis width VH 6 VREF pin 0.2 V Detection temperature TTH 20 + 150 C Release temperature TTL 20 + 125 C VTLH VTHL VH 7 1.245 1.270 1.295 V 7 1.215 1.250 1.285 V 7 20 mV ILEAK 5 ACOK pin = 25 V 0 1 A VACOKL 5 ACOK pin = 1 mA 0.9 1.1 V IVINL 18 VIN pin = 19 V, ACIN pin = 0 V 0 1 A IVINH 18 VIN pin = 19 V, ACIN pin = 5 V 6 10 A Parameter Output source current Output Block [OUT] Control Block [CTL] Input current Bias Voltage Block [VH] Under Voltage Lockout Protection Circuit Block [UVLO] Over Temperature Detection (Ta = +25 C, VCC pin = 19 V, VREF pin = 0 mA) Value Condition Unit Min. Typ. Max. Output voltage Threshold voltage Hysteresis width Threshold voltage Threshold voltage Hysteresis width ACOK pin output leak current AC Adapter Voltage Detection Block ACOK pin [AC Comp.] output "L" level voltage Current consumption VVCC- 6.5 VVCC- VVCC- 6.0 5.5 V (Continued) DS04-27264-2E 9 MB39A134 (Continued) Parameter Input voltage Threshold voltage Charge Voltage Control Block Input current [VO REFIN Control] Input voltage Input current Charge Current Input voltage Control Block [Charge Current Threshold voltage Control] Input current General Symbol Pin No. VH VEXT VL VTL VTH IIN 16 At 4.20 V/Cell 4.6 VVREF V 16 At external setting 0.4 4.4 V 16 At 4.10 V/Cell 0 0.2 V 16 VH 11 VM VL IINL IINH 16 0.21 0.3 0.39 V 16 4.41 4.5 4.59 V ADJ3 pin 0 1 A At 4 Cells VVREF - 0.4 VVREF V 11 At 2 Cells 2.4 2.6 V 11 At 3 Cells 0 0.3 V 11 CELLS = 0 V -8.3 -5 A 11 CELLS = IVREF 5 8.3 A VH 9 At normal charge 4.6 VVREF V VEXT 9 At external setting 0 4.4 V VTH 9 4.41 4.50 4.59 V IIN 9 ADJ2 pin 0 1 A ICCS1 18 VCC pin = 0 V, CTL pin = 0 V, ACIN pin = 5 V, VIN pin = 19 V 6 10 A ICCS2 21 VIN pin = 0 V, CTL pin = 0 V, VCC pin = 19 V 0 1 A ICC 21 CTL pin = 5 V 2.7 4.0 mA Standby current Power supply current (Ta = +25 C, VCC pin = 19 V, VREF pin = 0 mA) Value Condition Unit Min. Typ. Max. * : This parameter isn't be specified. This should be used as a reference to support designing the circuits. 10 DS04-27264-2E MB39A134 TYPICAL CHARACTERISTICS 4 3 2 Ta = +25 C VCTL = 5 V 1 0 0 5 10 15 20 25 1000 800 7 6 VVREF 500 5 400 4 300 3 ICTL 200 2 100 1 0 5 10 15 20 Reference voltage vs. Power supply voltage Reference voltage vs. Load current 3 2 Ta = +25 C VCTL = 5 V IVREF = 0 mA 1 0 0 5 10 15 20 25 Reference voltage VVREF (V) CTL pin input voltage VCTL (V) 4 8 600 Power supply voltage VVCC (V) 5 9 700 0 6 10 Ta = +25 C VVCC = 19 V IVREF = 0 mA 900 0 25 6 Ta = +25 C VVCC = 19 V VCTL = 5 V 5 4 3 2 1 0 0 5 10 15 20 25 Power supply voltage VVCC (V) Load current IVREF (mA) Reference voltage vs. Operating ambient temperature Triangular wave oscillation frequency vs. Power supply voltage 5.08 VVCC = 19 V VCTL = 5 V IVREF = 0 mA 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 -40 -20 0 +20 +40 +60 +80 +100 Operating ambient temperature Ta ( C) Reference voltage VVREF (V) 5 CTL pin input current ICTL (A) CTL pin input current, Reference voltage vs. CTL pin input voltage Triangular wave oscillation frequency fosc (kHz) Reference voltage VVREF (V) Reference voltage VVREF (V) Power supply current Icc (mA) Power supply current vs. Power supply voltage 550 540 Ta = +25 C VCTL = 5 V RT = 33 k 530 520 510 500 490 480 470 460 450 0 5 10 15 20 25 Power supply voltage VVCC (V) (Continued) DS04-27264-2E 11 MB39A134 (Continued) Triangular wave oscillation frequency vs. Operating ambient temperature Triangular wave oscillation frequency vs. Timing resistor VVCC = 19 V VCTL = 5 V RT = 33 k -20 0 +20 +40 +60 +80 +100 Triangular wave oscillation frequency fosc (kHz) Triangular wave oscillation frequency fosc (kHz) 10000 550 540 530 520 510 500 490 480 470 460 450 -40 Ta = +25 C VVCC = 19 V VCTL = 5 V 1000 100 10 100 1000 Error amplifier threshold voltage vs. Operating ambient temperature 8.500 VVCC = 19 V VCTL = 5 V VCELLS = OPEN 8.475 8.450 8.425 8.400 8.375 8.350 8.325 8.300 -40 -20 0 +20 +40 +60 +80 +100 Error amplifier threshold voltage VTH (V) Error amplifier threshold voltage vs. Operating ambient temperature 12.700 VVCC = 19 V VCTL = 5 V VCELLS = GND 12.675 12.650 12.625 12.600 12.575 12.550 12.525 12.500 -40 -20 0 +20 +40 +60 +80 +100 Operating ambient temperature Ta ( C) Operating ambient temperature Ta ( C) Error amplifier threshold voltage vs. Operating ambient temperature Permissible dissipation vs. Operating ambient temperature 16.900 VVCC = 19 V VCTL = 5 V VCELLS = 5 V 16.875 16.850 16.825 16.800 16.775 16.750 16.725 16.700 -40 -20 0 +20 +40 +60 +80 +100 Operating ambient temperature Ta ( C) 12 10 Timing resistor RT (k) Permissible dissipation PD (mW) Error amplifier threshold voltage VTH (V) Error amplifier threshold voltage VTH (V) 1 Operating ambient temperature Ta ( C) 1400 1282 1200 1000 800 600 400 200 0 -40 -20 0 +20 +40 +60 +80 +100 Operating ambient temperature Ta ( C) DS04-27264-2E MB39A134 FUNCTIONAL DESCRIPTION MB39A134 is a DC/DC converter which uses pulse width modulation (PWM) for charging Li-ion battery and controls the charge voltage and current when charging the battery. It includes the charge control function for the battery and the AC adapter voltage detection function to stably supply the voltage from the AC adapter and the battery to the system. * When controlling the charge voltage (constant voltage mode), the voltage entered in ADJ3 pin and CELLS pin can be used to set an arbitrary voltage. The error amplifier (Error Amp3) compares BATT pin voltage with the internal reference voltage to generate the PWM control signal for generating an arbitrary charge voltage. * When controlling the charge current (constant current mode) , the current detection amplifier (Current Amp2) amplifies the voltage drop generated between both ends of the charge current sense resistance (RS) to 25 times and outputs it through OUTC2 pin. The error amplifier (Error Amp2) compares the output voltage from the current detection amplifier (Current Amp2) with the voltage set at ADJ2 pin to generate the PWM control signal for executing the constant current charge. * When controlling the AC adapter power, the current detection amplifier (Current Amp1) amplifies the difference between -INC1 pin voltage and +INC1 pin voltage (VVREF) to 25 times and outputs it through OUTC1 pin when the output voltage of the AC adapter drops. The error amplifier (Error Amp1) compares the output voltage from the current detection amplifier (Current Amp1) with ADJ1 pin voltage to generate the PWM control signal for controlling the charge current so that AC adapter power can be kept constant. The triangular wave voltage generated from the triangular wave oscillator is compared with the lowest potential of the output voltages from the error amplifier (Error Amp1, Error Amp2, and Error Amp3) and when the former is lower than the latter, the high side switching FET is set on. In addition, AC Comp detects installation/removal of the AC adapter and its information is generated through ACOK pin. DS04-27264-2E 13 MB39A134 1. DC/DC Converter Block (1) Reference voltage block (REF) The reference voltage circuit (REF) uses the voltage supplied from the VCC pin (pin 21) to generate stable voltage (Typ. 5.0 V) that has undergone temperature compensation. The generated voltage is used as the reference power supply for the internal circuitry of the IC. This block can output load current of up to 1 mA from the reference voltage VREF pin (pin 6). (2) Triangular wave oscillator block (OSC) The triangular wave oscillator builds the capacitor for frequency setting into, and generates the triangular wave oscillation waveform by connecting the frequency setting resistor with the RT pin (pin 17). The triangular wave is input to the PWM comparator on the IC. Triangular wave oscillation frequency: fosc fosc (kHz) =: 17000 / RT (k) (3) Error amplifier block (Error Amp1) This amplifier detects the output signal from the current detection amplifier (Current Amp1) and outputs a PWM control signal. In addition, a stable phase compensation can be made available to the system by connecting the resistor and the capacitor to the COMP1 pin. (4) Error amplifier block (Error Amp2) This amplifier detects the output signal from the current detection amplifier (Current Amp2), compares this to the output signal from the charge current control circuit, and outputs a PWM control signal to be used in controlling the charge current. In addition, a stable phase compensation can be made available to the system by connecting the resistor and the capacitor to the COMP2 pin. (5) Error amplifier block (Error Amp3) This error amplifier (Error Amp3) detects the output voltage from the DC/DC converter, compares this to the output signal from the VO REFIN controller circuit, and outputs the PWM control signal. Arbitrary output voltage from 2 Cell to 4 Cell can be set by connecting an external resistor of charging voltage to ADJ3 pin (pin 16). In addition, a stable phase compensation can be made available to the system by connecting the resistor and the capacitor to the COMP3 pin. (6) Current detection amplifier block (Current Amp1) The current detection amplifier (Current Amp1) amplifies the voltage difference between +INC1 pin (pin 24) and -INC1 pin (pin 1) 25 times and the signal is output to the following error amplifier (Error Amp1) . (7) Current detection amplifier block (Current Amp2) The current detection amplifier (Current Amp2) detects a voltage drop on the both ends of the output sense resistor (RS) due to the flow of the charge current, using the +INC2 pin (pin 13) and BATT pin (pin 12) . The signal amplified to 25 times is output to the following error amplifier (Error Amp2) . 14 DS04-27264-2E MB39A134 (8) PWM comparator block (PWM Comp.) The PWM comparator circuit (PWM Comp.) is a voltage-pulse width converter for controlling the output duty of the error amplifiers (Error Amp1 to Error Amp3) depending on their output voltage. The PWM comparator circuit compares the triangular wave voltage generated by the triangular wave oscillator with the error amplifier output voltage and turns on the external output transistor (MOS FET) , during the interval in which the triangular wave voltage is lower than the error amplifier output voltage. (9) Output block (OUT) The output circuit uses a totem-pole configuration capable of driving an external P-ch MOS FET. The output "L" level sets the output amplitude to 6 V (Typ) using the voltage generated by the bias voltage block (VH) . This results in increasing conversion efficiency and suppressing the withstand voltage of the connected external transistor (MOSFET) even in a wide range of input voltages. (10) Power supply control block (CTL) Setting the CTL pin (pin 14) to "L" level places the IC in the standby mode. During the standby mode, only AC adapter detection function is operated. (The supply current is 6 A at typical in the standby mode.) CTL function table CTL Power AC adapter detection L OFF (Standby) ON (Active) H ON (Active) ON (Active) (11) Bias voltage block (VH) The bias voltage circuit outputs VVCC - 6 V (Typ) as the minimum potential of the output circuit. In the standby mode, this circuit outputs the potential equal to VVCC. 2. Protection Functions (1) Under voltage lockout protection circuit block (UVLO) The transient state or a momentary decrease in supply voltage or internal reference voltage (VREF pin) , which occurs when the power supply (VCC pin) is turned on, may cause malfunctions in the control IC, resulting in breakdown or deterioration of the system. To prevent such malfunction, the under voltage lockout protection circuit detects internal reference voltage drop and fixes the OUT pin (pin 20) to the "H" level. The system restores when the power supply and the internal reference reaches less than the threshold voltage of the lockout protection circuit at the low voltage level. Protection circuit (UVLO) operation function table When UVLO is operating (VCC or VREF voltage is lower than UVLO threshold voltage.), the logic of the following pin is fixed at the value shown. pin OUT Status H DS04-27264-2E 15 MB39A134 (2) Over temperature detection The circuit protects an IC from heat-destruction. If the temperature at the joint part reaches +150 C, the circuit changes the level of OUT pin to "H", and stops the voltage output. In addition, if the temperature at the joint part drops to +125 C, the output restarts again. Therefore, make sure to design the DC/DC power supply system so that the over heating protection does not start frequently. 3. Detection Functions AC adapter voltage detection block (AC Comp.) The AC adapter voltage detection block (AC Comp.) detects that ACIN pin voltage is below 1.25 V (Typ) and sets ACOK pin in the AC adapter voltage detection block to Hi-Z. In addition, a higher voltage from either VCC pin or VIN pin is supplied as the IC power supply. ACIN ACOK H L L Hi-Z R1 Micro controller AC adapter R2 7 ACIN 5 ACOK <AC Comp.> + - AC adapter detection voltage setting VIN = Low to High Vth = (R1 + R2) / R2 x 1.27 V VIN = High to Low Vth = (R1 + R2) / R2 x 1.25 V 16 DS04-27264-2E MB39A134 4. Setting the Charge Voltage The charge voltage (DC/DC output) is set by the input voltage to ADJ3 pin (pin 16) and CELLS pin (pin 11) . The ADJ3 pin (pin 16) can set charge voltage per cell. An arbitrary charge voltage is set when external resistor is set. It doesn't need external resistor when ADJ3 pin (pin 16) is input to VREF level or GND level by internal high accurate reference voltage. The CELLS pin (pin 11) can set the series battery number when the pin is input VREF, OPEN or GND level. The setting of ADJ3 pin (pin 16), CELLS pin (pin 11) and charge voltage (DC/DC output) is shown below. ADJ3 Input Voltage VREF pin (ADJ3 4.6 V) GND pin (ADJ3 0.2 V) External voltage setting (ADJ3 = 0.4 V to 4.4 V) CELLS Charge Voltage Note OPEN 8.4 V 2 Cell x 4.20 V/Cell GND 12.6 V 3 Cell x 4.20 V/Cell VREF 16.8 V 4 Cell x 4.20 V/Cell OPEN 8.2 V 2 Cell x 4.10 V/Cell GND 12.3 V 3 Cell x 4.10 V/Cell VREF 16.4 V 4 Cell x 4.10 V/Cell OPEN 4 x ADJ3 pin voltage 2 Cell x 2 x ADJ3 pin voltage/Cell GND 6 x ADJ3 pin voltage 3 Cell x 2 x ADJ3 pin voltage/Cell VREF 8 x ADJ3 pin voltage 4 Cell x 2 x ADJ3 pin voltage/Cell * ADJ3 pin internal circuit ADJ3 VA VA 16 + 2.1 V Comparator_A To Error Amp3 SELECTOR 2.05 V - 4.5 V LOGIC + Comparator_B - 0.3 V DS04-27264-2E 17 MB39A134 5. Setting the Charge Current The Error amplifier block (Error Amp2) compares the output voltage of charge current control block set by ADJ2 pin (pin 9) with the output signal from the current detection amplifier (current Amp2) , and outputs a PWM control signal to be used in controlling the maximum charge current for battery. When the current overflows the rated value, the current will be constantly charged to the rated value, and the charge voltage will drop. Battery charge current setting voltage : ADJ2 Charge current control block output voltage voltage (V) - 0.075 Upper limit of charge current Io = Current detection amplifier block voltage gain (25.0 V/V Typ) x sense resistor RS () ADJ2 Input Voltage Charge Current Control Block Output Voltage Charge Current RS = 40 m RS = 20 m RS = 15 m VREF (ADJ2 > 4.6 V) 1.5 V 1.425 A 2.85 A 3.79 A External Voltage Setting (ADJ2 = GND to 4.4 V) VADJ2 (V) VADJ2-0.075 (A) 2 x (VADJ2-0.075) (A) 2.66 x (VADJ2-0.075) (A) * ADJ2 pin internal circuit ADJ2 To Error Amp2 9 1.5 V Selector Comparator_C + - 4.5 V 18 DS04-27264-2E MB39A134 * Example of charge current setting (RS = 40 m) Io 4.4 V 4.325 A 1.425 A 0V 4.41 V 4.59 V External setting when ADJ2 = 0 V to 4.4 V VADJ2 VVREF Internal reference voltage setting when ADJ2 = 4.6 V to VREF Io (mA) 600 500 400 At RS = 40 m, +INC1 = 3 V to VCC 300 200 100 Error (MB39A134) < 25 mA VADJ2 (mV) 100 200 300 400 500 600 Max VADJ2 < 100 mV at Io = 0 mA Typ VADJ2 = 75 mV at Io = 0 mA Min VADJ2 > 50 mV at Io = 0 mA Io = 0 mA at VADJ2 = 0 V DS04-27264-2E 19 MB39A134 6. Setting Dynamically-Controlled-Charging By connecting as shown in the example of the figure below, the AC adopter voltage (VIN) drops and becomes the calculated Vth, and then, the dynamically-controlled charging loop reduce the charge current to keep a settled power level. AC adopter voltage in dynamically controlled charging mode: Vth = VREF x (1 - 1 AV x R4 R3 + R4 VREF : Reference voltage (5.0 V Typ) VIN ) x R1 + R2 R2 AV : Current detection amplifier block voltage gain (25.0 V/V Typ) VREF (5 V) <Current Amp1> +INC1 R1 24 + 1 - -INC1 R2 <Error Amp1> - + R3 ADJ1 3 R4 20 DS04-27264-2E MB39A134 TRANSIT RESPONSE WHEN A LOAD CHANGES SUDDENLY The constant voltage control loop and the constant current control loop are independent each other and when a load changes suddenly, these two control loops switch over each other. Overshoot of the battery voltage and current is generated by the delay in the control loop when changing the mode. The delay time is determined by the phase compensation components values. When the constant current control switches over to the constant voltage control when removing the battery, the control period with higher duty than the rated charge voltage occurs, resulting in voltage overshoot. In such a period, since the battery is removed, no excessive voltage should be applied to the battery. When the constant voltage control switches over to the constant current control when installing the battery, the control period with higher duty than the rated charge current occurs, resulting in current overshoot. For MB39A134, it can not be as current overshoot with 10 ms or less. Error Amp3 Output Error Amp2 Output Constant Current Battery Voltage Battery Current Error Amp2 Output Error Amp3 Output Low Voltage Constant Current When the charge control switches over from the constant current control to the constant voltage control, the control period with higher duty than the rated charge voltage occurs, resulting in voltage overshoot. For MB39A134, it can not be as current overshoot with 10 ms or less. 10 ms DS04-27264-2E 21 MB39A134 CONNECTION WITHOUT USING THE CURRENT AMP1, CURRENT AMP2 AND THE ERROR AMP1, ERROR AMP2 When Current Amp1, 2 or Error Amp1, 2 are not used, please connect it as follows. * +INC1 pin (pin 24), -INC1 pin (pin 1), ADJ1 pin (pin 3), and ADJ2 pin (pin 9) are connected with the VREF pin. * +INC2 pin (pin 13) is connected with the pin BATT pin (pin 12). * OUTC1 pin (pin 2) and OUTC2 pin (pin10) open. 24 +INC1 +INC2 13 1 -INC1 BATT 12 "OPEN" 2 OUTC1 "OPEN" 10 OUTC2 6 VREF 3 ADJ1 9 ADJ2 4 COMP1 8 COMP2 "OPEN" "OPEN" 22 DS04-27264-2E MB39A134 INPUT/OUTPUT PIN EQUIVALENT CIRCUIT DIAGRAM <Reference voltage block> <Control bloc> VCC 21 CTL 14 ESD protection component 6 VREF 33.1 k 37.27 k 51 k 12.10 k GND 23 GND 23 <Triangular wave oscillator block> <Error amplifier block (Error Amp1) > VREF 6 VREF 6 4 COMP1 OUTC1 2 17 RT GND 23 GND 23 3 ADJ1 <Error amplifier block (Error Amp2) > <Error amplifier block (Error Amp3) > VREF 6 VREF 6 8 COMP2 OUTC2 10 15 COMP3 -INE3 GND 23 GND 23 +INE2 +INE3 <Current detection amplifier block (Current Amp1) > <Current detection amplifier block (Current Amp2) > VCC 21 VCC 21 VREF 6 VREF 6 +INC2 13 +INC1 24 2 OUTC1 10 OUTC2 40 k 40 k 7.7 k 10 k GND 23 10 k GND 23 1 -INC1 12 BATT (Continued) DS04-27264-2E 23 MB39A134 <PWM comparator block> VREF <Output block> 6 VCC 21 COMP1 4 20 OUT CT COMP2 8 COMP3 15 VH 19 GND 23 GND 23 <AC adapter detection block> VCC 21 VIN 18 ACIN 5 ACOK 7 GND 23 <Bias voltage block> <Charge voltage setting block> VREF VCC 21 6 SELECTER 100 k ADJ3 16 19 VH +INE3 4.5V 0.3V GND 23 GND 23 (Continued) 24 DS04-27264-2E MB39A134 (Continued) <Charge current setting block> VREF 6 SELECTER +INE2 9 ADJ2 4.5 V GND 23 <Cell switch block> BATT 12 VREF 6 1 M CELLS 11 -INE3 1 M GND GND 23 DS04-27264-2E 25 MB39A134 TYPICAL APPLICATION CIRCUIT Q3 TPCA8102 VSYS R26 47 k TPCA8102 Q2A VIN R20 6.2 k R21 91 k R22 10 k GND TPCA8102 Q2B Q1-2 *2 Wire short R1 L1 Q1-1 PA2714GR C1 10 F C15 R23 0.22 200 k F R25 *1 C17 *2 15 H CDRH104R-150 Vo 20 m D1 MBRA340T3 R24 100 k R27 10 k DTr2 *2 R2 C2 C3 22 F *2 DTr1 DTC144EET1G R48 *2 GND ACOK ACOFF R34 *2 R47 100 k R30 *1 R28 *1 SW1-1 CTL C19 *2 R4 1 k C4 0.022 F R43 11 k R44 240 k R45 100 k C5 *2 +INC2 14 CTL CELLS 11 15 COMP3 OUTC2 10 16 ADJ3 R5 56 k 17 RT 18 VIN C21 0.1 F 19 VH R6 C6 0.1 F *1 20 21 C7 0.1 F CVM R8 cut R11 R7 cut 100 k R46 0 BATT 12 ADJ2 9 COMP2 8 ACIN 7 VREF 6 OUT ACOK 5 VCC COMP1 4 22 CVM ADJ1 3 23 GND OUTC1 2 24 +INC1 -INC1 1 R35 *1 R32 *1 SGND 13 MB39A134 C8 *2 +INC1 5V Place R12 = 0 for output 4.2 V/Cell. Place R13 = 0 for output 4.1 V/Cell. -INC1 18 V C20 *2 CELLS OUTC2 R9 10 k ADJ2 C9 0.001 F C10 *2 VREF R10 10 k C11 0.1 F C12 0.001 F C13 *2 OUTC1 C14 *2 R12 *1 R14 100 k R13 *2 R15 10 k R16 100 k SW1-2 R17 *2 R18 0 R19 *2 SW1-2 IO 2.85 A off *1 Patterm short *2 Not mounted Place R18 = 0 for 4 Cells operation. Place R19 = 0 for 3 Cells operation. Open R18 & R19 2 Cells operation. 26 DS04-27264-2E MB39A134 * Parts list Component Item Specification Vendor Package Parts No. Remarks M1 IC MB39A134 FML TSSOP-24 Q1-1 P-ch FET VDS = - 20 V, ID = 7 A (Max) NEC SOP-8 PA2714GR Q1-2 P-ch FET Q2A P-ch FET VDS = - 30 V, ID = 40 A (Max) TOSHIBA SOP Advance TPCA8102 Q2B P-ch FET VDS = - 30 V, ID = 40 A (Max) TOSHIBA SOP Advance TPCA8102 Q3 P-ch FET VDS = - 30 V, ID = 40 A (Max) TOSHIBA SOP Advance TPCA8102 DTr1 Transistor VCEO = 50 V ON Semi SC-75 DTC144EET1G DTr2 Transistor D1 Diode VF = 0.45 V (Max) at IF = 3 A ON Semi RMDS MBRA340T3 L1 Inductor 15 H 50 mW Irms = 3.1 A SUMIDA SMD CDRH104R-150 C1 Ceramic Capacitor 10 F (25 V) TDK 3225 C3225X5R1E106K C2 Ceramic Capacitor 22 F (25 V) TDK 3225 C3225JC1E226M C3 Ceramic Capacitor C4 Ceramic Capacitor 0.022 F (50 V) TDK 1608 C1608JB1H223K C5 Ceramic Capacitor C6 Ceramic Capacitor 0.1 F (50 V) TDK 1608 C1608JB1H104K C7 Ceramic Capacitor 0.1 F (50 V) TDK 1608 C1608JB1H104K C8 Ceramic Capacitor C9 Ceramic Capacitor 0.001 F (50 V) TDK 1608 C1608JB1H102J C10 Ceramic Capacitor C11 Ceramic Capacitor 0.1 F (50 V) TDK 1608 C1608JB1H104K C12 Ceramic Capacitor 0.001 F (50 V) TDK 1608 C1608JB1H102J C13 Ceramic Capacitor Not mounted C14 Ceramic Capacitor Not mounted C15 Ceramic Capacitor 0.22 F (25 V) TDK 1608 C1608JB1H224K C17 Not mounted C19 Ceramic Capacitor Not mounted C20 Ceramic Capacitor Not mounted C21 Ceramic Capacitor 0.1 F (50 V) TDK 1608 C1608JB1H104K Not mounted Not mounted Not mounted Not mounted Not mounted Not mounted (Continued) DS04-27264-2E 27 MB39A134 Component Item Specification Vendor Package Parts No. Remarks R1 Resistor 0 Mac-Eight SMD MJP-0.2 Wire short R2 Resistor 20 m KOA SL1 SL1TTE20L0D R4 Resistor 1 k SSM 1608 RR0816P102D R5 Resistor 56 k SSM 1608 RR0816P563D R6 Resistor R7 Resistor 100 k SSM 1608 RR0816P104D R8 Resistor R9 Resistor 10 k SSM 1608 RR0816P103D R10 Resistor 10 k SSM 1608 RR0816P103D R11 Resistor Pattern cut R12 Resistor Pattern short R13 Resistor Not mounted R14 Resistor 100 k SSM 1608 RR0816P104D R15 Resistor 10 k SSM 1608 RR0816P103D R16 Resistor 100 k SSM 1608 RR0816P104D R17 Resistor R18 Resistor 0 KOA 1608 RK73Z1J R19 Resistor R20 Resistor 6.2 k SSM 1608 RR0816P622D R21 Resistor 91 k SSM 1608 RR0816P913D R22 Resistor 10 k SSM 1608 RR0816P103D R23 Resistor 200 k SSM 1608 RR0816P204D R24 Resistor 100 k SSM 1608 RR0816P104D R25 Resistor R26 Resistor 47 k SSM 1608 RR0816P473D R27 Resistor 10 k SSM 1608 RR0816P103D R28 Resistor Pattern short R30 Resistor Pattern short R32 Resistor Pattern short R34 Not mounted R35 Resistor Pattern short R43 Resistor 11 k SSM 1608 RR0816P113D R44 Resistor 240 k SSM 1608 RR0816P244D R45 Resistor 100 k SSM 1608 RR0816P104D R46 Resistor 0 KOA 1608 RK73Z1J Pattern short Pattern cut Not mounted Not mounted Pattern short (Continued) 28 DS04-27264-2E MB39A134 (Continued) Component Item Specification Vendor Package Parts No. R47 Resistor 100 k SSM 1608 RR0816P104D R48 SW1 DIP SW SW MATSUKYU SMD DMS-2H PIN Wiring Pin WT-2-1 Mac-Eight WT-2-1 Remarks Not mounted 11-pin Note : These components are recommended based on the operating tests authorized. FML NEC TOSHIBA ON Semi SUMIDA TDK Mac-Eight KOA SSM MATSUKYU : Fujitsu Microelectronics Limited : NEC Corporation : TOSHIBA Corporation : ON Semiconductor Corporation : SUMIDA Corporation : TDK Corporation : Mac-Eight Co.,Ltd : KOA Corporation : SUSUMU Co.,Ltd : Matsukyu Co.,Ltd DS04-27264-2E 29 MB39A134 APPLICATION NOTE * Inductor selection The inductance value should be selected, as a reference, so that the peak-to-peal value of the inductor ripple current is 50% or less of the maximum charge current. In such a case, the inductance value can be obtained as follows : L L VIN - VO x LOR x IOMAX VO VIN x fOSC : Inductance value [H] IOMAX : Max. charge current [A] LOR : Peak-to-peak value of inductor ripple current - max. charge current ratio (0.5) VIN : Switching system power supply voltage [V] VO : Charge voltage [V] fosc : Switching frequency [Hz] The minimum charge current value (critical current value) without backward inductor current can be obtained as follow : IOC = VO 2xL x VIN - VO VIN x fOSC IOC : Critical current [A] L : Inductance value [H] VIN : Switching system power supply voltage [V] VO : Charge voltage [V] fosc : Switching frequency [Hz] To judge that the current passing through the inductor is below a rated value, it is necessary to obtain a maximum current value passing through the inductor. The maximum inductor current value can be obtained as follows : ILMAX IoMAX + IL 2 ILMAX : Max. inductor current [A] IoMAX : Max. charge current [A] IL : Peak-to-peak value of inductor ripple current [A] 30 DS04-27264-2E MB39A134 IL VIN - VO L VO x VIN x fOSC Inductor current ILMAX IoMAX Varies depending on a load current. IOC IL Time 0 * Switching FET selection If MB39A134 is used for the charger for a notebook PC, since the output voltage of an AC adapter, which is the input voltage of an switching FET, is 25 V or less, in general, a 30 V class MOS FET can be used as the switching FET. Obtain the maximum value of the current flowing through the switching FET in order to determine whether the current flowing through the switching FET is within the rated value. The maximum current flowing through the switching FET can be found by the following formula. IDMAX IoMAX + IL 2 IDMAX : Max. switching FET drain current [A] IOMAX : Max. charge current [A] IL : Peak-to-peak value of inductor ripple current [A] In addition, to judge that permissible switching FET loss is below the rated value, it is necessary to obtain the switching FET loss. To reduce switching FET loss as much as possible. when selecting a switching FET, take into consideration that the continuity loss is equal to the switching loss. The switching FET continuity loss can be obtained by the following formula: PRon = VO VIN x IO2 x Ron PRon : Switching FET continuity loss [W] IO : Charge current [A] VIN : Switching system power supply voltage [V] VO : Charge voltage [V] Ron : Switching FET on resistance [] DS04-27264-2E 31 MB39A134 The switching FET switching loss can be obtained simply as follows : PSW = 1 2 x VIN x ILMIN x fosc x Tr + 1 2 x VIN x ILMAX x fosc x Tf PSW : Switching FET switching loss [W] ILMIN = Iomax - IL / 2 : Lower value of inductor current [A] ILMAX = Iomax + IL / 2 : Upper value of inductor current [A] VIN : Switching system power supply voltage [V] fosc : Switching frequency [Hz] Tr : Switching FET turn-on time [s] Tf : Switching FET turn-off time [s] * Flyback diode selection Select the shot-key barrier diode (Flyback diode) with a small forward voltage as much as possible. To judge that the current passing through the flyback diode is below the rated value, it is necessary to obtain the value of peak current passing through the flyback diode. The maximum current value of the flyback diode can be obtained as follows : If IoMAX + IL 2 : Forward current [A] If IOMAX : Max. charge current [A] IL : Peak-to-peak value of inductor ripple current [A] Furthermore, to judge that permissible flyback diode loss is below a rated value, it is necessary to obtain the flyback diode loss. The flyback diode loss can be obtained as follows : PSBD = IoMAX x (1 - VO VIN ) x Vf PSBD : Flyback diode loss [W] IOMAX : Max. charge current [A] VIN : Switching system power supply voltage [V] 32 VO : Charge voltage [V] Vf : Forward voltage [V] DS04-27264-2E MB39A134 * Output capacitor selection Since a high ESR causes the output ripple voltage to increase, a low-ESR capacitor is needs to be used in order to reduce the output ripple voltage. Use a capacitor that has sufficient ratings to surge current generated when the battery is inserted or removed. Generally, the ceramic capacitor is used as the output capacitor. With the switching ripple voltage taken into consideration, the minimum capacitance required can be found by the following formula. 1 Co 2 x fosc x ( Co VO IL - ESR) : Output capacitor [F] ESR : Serial resistance of output capacitor [] VO : Switching ripple voltage [V] IL : Peak-to-peak value of inductor ripple current [A] fosc : Switching frequency [Hz] Since an overshoot occurs in the DC/DC converter output voltage when a battery being charged is removed, use a capacitor having sufficient withstand voltage. Generally, the capacitor having a rated withstand voltage higher than the maximum input voltage is sued. Moreover, use a capacitor having sufficient tolerance for allowable ripple current. The allowable ripple current required can be found by the following formula. Irms IL 23 Irms : Acceptable ripple current (effective value) [A] IL : Peak-to-peak value of inductor ripple current [A] DS04-27264-2E 33 MB39A134 * Input capacitor selection Select an input capacitor that has an ESR as small as possible. A ceramic capacitor is ideal. If a highcapacitance capacitor is needed for which there is no suitable ceramic capacitor use a polymer capacitor or a tantalum capacitor having a low ESR. The ripple voltage by the switching operation of the DC/DC converter is generated in the power supply voltage. Please consider the lower limit value of the input capacitor according to the allowable ripple voltage. The ripple voltage of the power supply can be easily found by the following formula. VIN = IOMAX CIN x VO VIN x fOSC + ESR x (IOMAX + IL 2 ) VIN : Peak-to-peak value of switching system power supply ripple voltage [V] IOMAX : Maximum charge current [A] CIN : Input capacitor [F] VIN : Switching system power supply voltage [V] VO : Charge voltage [V] fOSC : Switching frequency [Hz] ESR : Series resistance component of input capacitor [] IL : Peak-to-peak value of inductor ripple current [A] The ripple voltage of the power supply can be decreased by raising the switching frequency besides using the capacitor. The capacitor has the features in the frequency, temperature and bias voltage, so that the effect capacitance can be extremely small depending on the use conditions. Please choose the one of having the enough margin for the input voltage and ripple current to ratings of the capacitor. The acceptable ripple current is given by the following formula. Irms IOMAX x VO x (VIN - VO) VIN Irms : Acceptable ripple current (effective value) [A] IOMAX : Maximum charge current [A] 34 VIN : Switching system power supply voltage [V] VO : Charge voltage [V] DS04-27264-2E MB39A134 * Designing phase compensation circuit (1) Constant voltage (CV) mode phase compensation circuit It is common to connect a 1-pole-1-zero phase compensation circuit to the output pin (COMP3) of the error amplifier 3 (gm amplifier). When a low-ESR capacitor, such as a ceramic capacitor, is used as the output capacitor, it is easier for the DC/DC converter to oscillate as the phase delay approaches 180 degrees due to the resonance frequency of LC. In this situation, perform phase compensation by connecting a RC phase lead compensator to the COMP3 pin, and between the -INE3 pin and the BATT pin. 1pole-1zero phase compensation circuit VO 12 BATT R1 - COMP3 15 + R2 Error Amp3 Vrefint1 To PWM Comp. Rc Cc Rc () and Cc (F) of the phase lead circuit can be obtained by the following formula. RC =: CC =: IO 190 x 10-6 x VIN x L Co L x Co RC IO : Charge current [A] VIN : Switching system power supply voltage [V] L : Inductance value of inductor [H] Co : Output capacitor value [F] VO : Charge voltage [V] In this situation, the crossover frequency fco [Hz] can be obtained by the following formula. fCO=: 1 x 10-5 x DS04-27264-2E VIN VO x CC 35 MB39A134 (2) Constant current (CC) mode phase compensation circuit Since the output capacitor impedance has a small influence to the loop response characteristics in this mode, the phase compensation circuit with 1pole-1zero is normally connected to the output pin (COMP2) of the error amplifier 2 (gm amplifier) . 1pole-1zero phase compensation circuit BATT 12 Current Amp2 - - Rs 13 + COMP2 + +INC2 Error Amp2 To PWM Comp. Rc Vrefint2 Cc Rc () and Cc (F) of the phase lead circuit can be obtained by the following formula. RC =: 1.2 x 104 x CC =: fCO x L Rs x VIN L x Co RC Rs : Resistance value of charge current detection [] VIN : Switching system power supply voltage [V] L : Inductance value [H] Co : Output capacitance value [F] fCO : Crossover frequency [Hz] 36 DS04-27264-2E MB39A134 * Allowable loss, and thermal design In general, the allowable loss and thermal design of this IC can be ignored because this IC is highly effective. However, when this IC is used with high power supply voltage, high switching frequency, high load, or high temperature, it is necessary to take account of the allowable loss and thermal design while using this IC. The IC internal loss (PIC) can be found by the following formula. PIC = VCC x (ICC + Qg x fOSC) PIC : IC's Internal loss [W] VCC : Power supply voltage (VIN) [V] ICC : Power supply current [A] (4.0 mA Max) Qg : Total amount of charges of all switching FETs [C] (when Vgs = 6 V) fOSC : Switching frequency [Hz] The temperature at the joint part (Tj) can be obtained as follows : Tj = Ta + ja x PIC Tj : Joint part temperature [ C] Ta : Ambient temperature [ C] ja : TSSOP-24 package thermal resistance (78 C / W) PIC : IC's internal loss [W] DS04-27264-2E 37 MB39A134 * Board layout When designing the layout, consider the points listed below. Take account of the following points when designing the board layout. * Place a GND plane on the IC mounting surface whenever possible. Connect the controller GND to PGND only at one point of PGND in order to prevent a large current path from passing the controller GND. * Connect to the input capacitor (CIN) , switching FET, flyback diode, inductor (L) , sense resistance (Rs) , and the output capacitor (Co) on the surface layer. Do not connect to them via any through-hole. * For a loop compased of input capacitors (CIN), switching FET and flyback diode, minimize its current loop. When minimizing routing and loops, give priority to this loop over others. * Connect GND pins of the input capacitor (CIN) , flyback diode, and the output capacitor (Co) to GNDs on the inner layer via the through holes by making them close to the pins. * Large currents momentarily flow through the nets of the OUT pin, which are connected to the switching FET gate. Use a wiring width of about 0.8 mm and minimize the length of routing. * Place the bypass capacitor connected to VCC, VIN, VREF, and VH pins, and the resistance connected to the RT pin as close to the respective pins as possible. Moreover, connect the bypass capacitor and the GND pins of the VCC, VIN, and VREF of the fOSC:setting resistance in close proximity to the GND pin of the IC. (Strengthen the connection to the internal layer GND by making through-holes in close proximity to each of the GND pin of the IC, terminals of bypass capacitors, terminals of the fosc setting resistors.) * Since nets of -INC1, +INCx, BATT, COMPx, and RT pins are sensitive to noise, make wiring for them as shortly as possible, and keep them away from switching system parts as much as possible. * The remote sensing (Kelvin connection) of the routing of the +INC2 and BATT pins are very sensitive to noise. Therefore, make their routing close to each other and keep the routing as far away from switching components as possible. GND wiring example Switching system part arrangement example Switching FET Surface layer VIN Cin PGND Flyback diode PGND PGND VCC Co Inner layer VIN L Rs VO Inner layer To +INC2 To BATT GND VH RT Feedback line VREF GND Through hole connecting of GND and PGND at a single point Surface layer 38 DS04-27264-2E MB39A134 REFERENCE DATA Unless explained specially, the measurement conditions are VIN = 19 V, IO = 2.85 A, Li+ battery 4 Cell, and Ta = + 25 C. Conversion efficiency vs. Charging current (Constant voltage mode) Charging voltage vs. Charging current 20 100 18 4 Cells Charging voltage Vo (V) Conversion efficiency (%) 98 96 94 3 Cells 92 2 Cells 90 88 86 84 82 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 4 Cells 16 14 3 Cells 12 10 2 Cells 8 6 SW1-2 = OFF 4 2 0 0.0 Charging current Io (A) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Charging current Io (A) Conversion efficiency vs. Charging voltage (Constant current mode) 100 Conversion efficiency (%) 95 90 85 80 75 70 65 60 55 50 0 2 4 6 8 10 12 14 16 18 Charging voltage Vo (V) Switching waveform (Constant voltage mode) Switching waveform (Constant current mode) VOUT (V) VOUT (V) 15 VOUT VLX (V) 20 IO = 1.5 A VLX 15 10 5 VLX (V) 20 0 15 10 10 5 5 0 0 1 s/div 15 VOUT 10 VO = 10 V 5 VLX 0 1 s/div (Continued) DS04-27264-2E 39 MB39A134 (Continued) Start and stop (Constant voltage mode) VO (V) 15 Start and stop (Constant current mode) VO (V) 15 VO VO 10 10 5 5 VCTL (V) 5 0 IO(A) 2 IO 0 VCTL IO(A) 2 VCTL (V) 5 IO VCTL 0 20 ms/div Load-step response (Constant voltage mode) Battery insertion VO (V) 20 18 VO 16 VO 16 CV to C V CV to CV 14 14 IO(A) 1 IO 0 20 ms/div 20 ms/div Load-step operation response (Constant current mode) Battery insertion Load-step operation response (Constant current mode) Battery removal VO (V) 20 18 VO 16 14 IO(A) IO 3 2 CV to CC 20 ms/div 40 IO(A) 1 IO 0 VO (V) 20 18 4 ms/div Load-step response (Constant voltage mode) Battery removal VO (V) 20 18 0 VO 16 14 IO(A) IO 3 2 CC to CV 1 1 0 0 20 ms/div DS04-27264-2E MB39A134 USAGE PRECAUTION 1. Do not configure the IC over the maximum ratings lf the lC is used over the maximum ratings, the LSl may be permanently damaged. It is preferable for the device to be normally operated within the recommended usage conditions. Usage outside of these conditions can have a bad effect on the reliability of the LSI. 2. Use the devices within recommended operating conditions The recommended operating conditions are the recommended values that guarantee the normal operations of LSI. The electrical ratings are guaranteed when the device is used within the recommended operating conditions and under the conditions stated for each item. 3. Printed circuit board ground lines should be set up with consideration for common impedance 4. Take appropriate measures against static electricity * * * * Containers for semiconductor materials should have anti-static protection or be made of conductive material. After mounting, printed circuit boards should be stored and shipped in conductive bags or containers. Work platforms, tools, and instruments should be properly grounded. Working personnel should be grounded with resistance of 250 k to 1M in series between body and ground. 5. Do not apply negative voltages The use of negative voltages below -0.3 V may cause the parasitic transistor to be activated on LSI lines, which can cause malfunctions. ORDERING INFORMATION Part number MB39A134PFT-E1 Package Remarks 24-pin plastic TSSOP (FPT-24P-M08) Lead Free version EV BOARD ORDERING INFORMATION EV board part No. MB39A134EVB-01D EV board version No. Remarks MB39A134EVB-01 Rev1.0 TSSOP-24 RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION The LSI products of Fujitsu microelectronics with "E1" are compliant with RoHS Directive , and has observed the standard of lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls (PBB) , and polybrominated diphenyl ethers (PBDE) . A products whose part number has trailing characters "E1" is RoHS compliant. DS04-27264-2E 41 MB39A134 MARKING FORMAT (LEAD FREE VERSION) XXXX XXX INDEX 42 Lead Free version DS04-27264-2E MB39A134 LABELING SAMPLE (LEAD FREE VERSION) Lead-free mark JEDEC logo JEITA logo MB123456P - 789 - GE1 (3N) 1MB123456P-789-GE1 1000 (3N)2 1561190005 107210 G Pb QC PASS PCS 1,000 MB123456P - 789 - GE1 2006/03/01 ASSEMBLED IN JAPAN MB123456P - 789 - GE1 1/1 0605 - Z01A 1000 1561190005 The part number of a lead-free product has the trailing characters "E1". DS04-27264-2E 43 MB39A134 MB39A134PFT-E1 RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY LEVEL Item Condition Mounting Method IR (infrared reflow) , Manual soldering (partial heating method) Mounting times 2 times Storage period Before opening Please use it within two years after Manufacture. From opening to the 2nd reflow Less than 8 days When the storage period after opening was exceeded Please process within 8 days after baking (125 C, 24H) 5 C to 30 C, 70%RH or less (the lowest possible humidity) Storage conditions [Mounting Conditions] (1) IR (infrared reflow) M rank : 250 C Max 260 C 255 C Main heating 170 C to 190 C (b) RT (a) "H" level : 260 C Max (a) Temperature Increase gradient (b) Preliminary heating (c) Temperature Increase gradient (d) Peak temperature (d') Main Heating (e) Cooling (c) (d) (e) (d') : Average 1 C/s to 4 C/s : Temperature 170 C to 190 C, 60 s to 180 s : Average 1 C/s to 4 C/s : Temperature 260 C Max; 255 C or more, 10 s or less : Temperature 230 C or more, 40 s or less or Temperature 225 C or more, 60 s or less or Temperature 220 C or more, 80 s or less : Natural cooling or forced cooling Note : Temperature : the top of the package body (2) Manual soldering (partial heating method) Conditions : Temperature 400 C Max Times 44 : 5 s max/pin DS04-27264-2E MB39A134 PACKAGE DIMENSION 24-pin plastic TSSOP Lead pitch 0.50 mm Package width x package length 4.4 x 6.5 mm Lead shape Gullwing Sealing method Plastic mold Mounting height 1.10 mm MAX Weight 0.08 g Code (Reference) P-TSSOP24-4.4x6.5-0.50 (FPT-24P-M08) 24-pin plastic TSSOP (FPT-24P-M08) Note 1) *1 : These dimensions include resin protrusion. Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder. *1 6.500.10(.256.004) 0.170.05 (.007.002) 24 13 *2 4.400.10 6.400.20 (.173.004) (.252.008) INDEX Details of "A" part 1.050.05 (Mounting height) (.041.002) 1 12 0.50(.020) "A" 0.220.05 (.009.002) 0.10(.004) 0~8 M +0.03 0.50(.020) 0.600.15 (.024.006) 0.07 -0.07 +.001 (Stand off) .003 -.003 0.25(.010) 0.08(.003) (c)2002-2008 FUJITSU MICROELECTRONICS LIMITED F24031S-c-1-2 C 2002 FUJITSU LIMITED F24031S-c-1-1 Dimensions in mm (inches). Note: The values in parentheses are reference values. Please confirm the latest Package dimension by following URL. http://edevice.fujitsu.com/package/en-search/ DS04-27264-2E 45 MB39A134 CONTENTS page - DESCRIPTION .............................................................................................................................................................. 1 - FEATURES .................................................................................................................................................................... 1 - APPLICATIONS ............................................................................................................................................................. 1 - PIN ASSIGNMENT ....................................................................................................................................................... 2 - PIN DESCRIPTIONS .................................................................................................................................................... 3 - BLOCK DIAGRAM ........................................................................................................................................................ 4 - ABSOLUTE MAXIMUM RATINGS ............................................................................................................................. 5 - RECOMMENDED OPERATING CONDITIONS ....................................................................................................... 6 - ELECTRICAL CHARACTERISTICS .......................................................................................................................... 7 - TYPICAL CHARACTERISTICS .................................................................................................................................. 11 - FUNCTIONAL DESCRIPTION .................................................................................................................................... 13 - TRANSIT RESPONSE WHEN A LOAD CHANGES SUDDENLY ........................................................................ 21 - CONNECTION WITHOUT USING THE CURRENT AMP1, CURRENT AMP2 AND THE ERROR AMP1, ERROR AMP2 ......................................................................................................................... 22 - INPUT/OUTPUT PIN EQUIVALENT CIRCUIT DIAGRAM ..................................................................................... 23 - TYPICAL APPLICATION CIRCUIT ............................................................................................................................ 26 - TYPICAL APPLICATION CIRCUIT ............................................................................................................................ 27 - APPLICATION NOTE ................................................................................................................................................... 30 - REFERENCE DATA ..................................................................................................................................................... 39 - USAGE PRECAUTION ................................................................................................................................................ 41 - ORDERING INFORMATION ....................................................................................................................................... 41 - EV BOARD ORDERING INFORMATION ................................................................................................................. 41 - RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION ............................................................. 41 - MARKING FORMAT (LEAD FREE VERSION) ........................................................................................................ 42 - LABELING SAMPLE (LEAD FREE VERSION) ........................................................................................................ 43 - MB39A134PFT-E1 RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY LEVEL ............... 44 - PACKAGE DIMENSION ............................................................................................................................................... 45 46 DS04-27264-2E MB39A134 MEMO DS04-27264-2E 47 MB39A134 FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600 Fax: +1-408-737-5999 http://www.fma.fujitsu.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD. 151 Lorong Chuan, #05-08 New Tech Park, Singapore 556741 Tel: +65-6281-0770 Fax: +65-6281-0220 http://www.fujitsu.com/sg/services/micro/semiconductor/ Europe FUJITSU MICROELECTRONICS EUROPE GmbH Pittlerstrasse 47, 63225 Langen, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 http://emea.fujitsu.com/microelectronics/ FUJITSU MICROELECTRONICS SHANGHAI CO., LTD. Rm.3102, Bund Center, No.222 Yan An Road(E), Shanghai 200002, China Tel: +86-21-6335-1560 Fax: +86-21-6335-1605 http://cn.fujitsu.com/fmc/ Korea FUJITSU MICROELECTRONICS KOREA LTD. 206 KOSMO TOWER, 1002 Daechi-Dong, Kangnam-Gu,Seoul 135-280 Korea Tel: +82-2-3484-7100 Fax: +82-2-3484-7111 http://www.fmk.fujitsu.com/ FUJITSU MICROELECTRONICS PACIFIC ASIA LTD. 10/F., World Commerce Centre, 11 Canton Road Tsimshatsui, Kowloon Hong Kong Tel: +852-2377-0226 Fax: +852-2376-3269 http://cn.fujitsu.com/fmc/tw All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information. 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