kyy VNO5NSP HIGH SIDE SMART POWER SOLID STATE RELAY TYPE Voss Roston} lout Vcc VNOSNSP 60 V 0.180 13 A 26 V OUTPUT CURRENT (CONTINUOUS): 13 A @ T.=25C 5 V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER DISSIPATION DESCRIPTION The VNO5NSP is a monolithic devices made using STMicroelectronics ViIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip fram over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. BLOCK DIAGRAM of 10 = 7 1 PowerSO-10 Vee UNDER TAB VOLTAGE q INPUT| 7 J >> lac CHARGE PUMP or 1-2 STATUS] 8 OPEN LOAD OVER TEMP. 8CO7190 6 GROUND QUTPUT June 1998 19VNOSNSP ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit Visryoss |Drain-Source Breakdown Voltage 60 Vv lour Output Current (cont.) 13 A IR Reverse Output Current -13 A lin Input Current +10 mA -Vcc Reverse Supply Voltage -4 V ISTAT Status Current +10 mA Vesp Electrostatic Discharge (1.5 kQ, 100 pF) 2000 V Prot Power Dissipation at Te < 25 C 56 W Tj Junction Operating Temperature -40 to 150 C Taig Storage Temperature -55 to 150 C CONNECTION DIAGRAMS Vee GROUND OUTPUT INPUT OUTPUT STATUS NC NC OUTPUT NC OUTPUT SCO7120 CURRENT AND VOLTAGE CONVENTIONS | lec a lin TAB 7 | INPUT Vee lout 2| + Istat OUTPUT J4_ 5 Ver & | STATUS GROUND Vin ! 6 VsTAT Vour sco71sa 2/9 4VNOSNSP THERMAL DATA Rinj-ease | Thermal Resistance Junction-case Max 2.2 CiW Rihj-amb Thermal Resistance Junction-ambient ($) Max 50 C/W ($) When mounted using minimum recommended pad size on FR-4 board ELECTRICAL CHARACTERISTICS (Vcc =13 V;-40s Tj s 125 C unless otherwise specified) POWER Symbol Parameter Test Conditions Min. | Typ. | Max. Unit Vcc Supply Voltage 7 26 Vv Ron On State Resistance lour =6 A 0.36 Q lour =6A Ti = 25 c 0.18 QO Is Supply Current Off State Tj > 25C 50 LA On State 15 mA SWITCHING Symbol Parameter Test Conditions Min. Typ. | Max. Unit tafon} Turn-on Delay Time Of | lour = 6 A Resistive Load 15 ps Output Current Input Rise Time < 0.1 ps Tj) = 25 C tr Rise Time Of Output lout = 6 A Resistive Load 30 ps Current Input Rise Time < 0.1 ws T) = 25 C ta(otf) Turn-off Delay Time Of | lout = 6 A Resistive Load 20 is Output Current Input Rise Time < 0.1 ps Tj = 25 S ti Fall Time Of Output lout = 6 A Resistive Load 10 is Current Input Rise Time < 0.1 ps Tj = 25 S (di/dt}on |Turn-on Current Slope |lour =6 A 0.5 A/us lout = lav A/us (di/dt)o# | Turn-off Current Slope |lour =6 A 2 A/us lout = lov 4 A/ps LOGIC INPUT Symbol Parameter Test Conditions Min. Typ. | Max. Unit Vit Input Low Level 0.8 Vv Voltage Vin Input High Level 2 (*) Vv Voltage Vicnyst.) | Input Hysteresis 0.5 Vv Voltage lin Input Current Vin=5V 250 500 A Viet Input Clamp Voltage lin = 10 mA 6 Vv lin = -10 mA -0.7 Vv PROTECTIONS AND DIAGNOSTICS Symbol Parameter Test Conditions Min. | Typ. | Max. Unit Vstat (#) | Status Voltage Cutput /Istar = 1.6 mA 0.4 Vv Low Vusp Under Voltage Shut 6.5 Vv Down i 3/9VNOSNSP ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (continued) Symbol Parameter Test Conditions Min. | Typ. | Max. Unit Vser () | Status Clamp Voltage /Istar = 10 mA 6 Vv IstaT = -10 mA -0.7 V tsc Switch-off Time in Rioap < 10 mMQ Te = 25 OS 1.5 5 ms Short Circuit Condition at Start-Up lov Over Current Rioap < 10 mMQ = -40 Te 125 C 60 A lav Average Current in Rioap < 10 mQ = =Te = 85C 1.4 A Short Circuit lot Open Load Current 5 180 mA Level Trsp Thermal Shut-down 140 C Temperature Tr Reset Temperature 125 S (*) The Vin is internally clamped at 6V about. Itis possible to connect this pin to an higher voltage via an external resistor calculated to not axceed 10 mA at the input pin. (*) Status determination > 100 ys after the switching edge. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (ne load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition, the thermal protection turns the integrated Power MOS off ata minimum junction temperature of 140 C. When the temperature returns to about 125 C the switchis automatically turned on again. In short circuit conditions the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. PROTECTING THE REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3}. DEVICE AGAINST 4/9 The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (ViL, VIH thresholds and Vstat are increased by Vr with respect to power GND). The undervoltage shutdown level is increased by VF. If there is no need fer the control unit te handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of Vin, Vit and Vstat takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO nermalized negative pulses that occours in the automotive environment. 4VNOSNSP TRUTH TABLE INPUT OUTPUT DIAGNOSTIC Normal Operation L L H H H H Open Circuit (No Load) H H L Over-temperature H L L Under-voltage x L H Figure 1: Waveforms INPUT INPUT | STATUS ve LJ U U GPEN LOAD ON NORMAL ON SWITCH OFF OPERATION SWITCH OFF | Lf \_fsf /\ NAL OUT OUT Po STATS UY THERMAL STATUS ON ON SHUTBOWN SWITCH Ore UNDER SWITCH 5-5 Ly ; VOLTAGE ee. 14 lout | OUT AW L_ Rd Oe SC04690 Figure 2: Over Current Test Circuit nom = 100A O ESR<10m 2 =O 1F Jo IN 100nF Vec GND OUTPUT <10m0 3C04710 4| 5/9VNOSNSP Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Vee I NPUT _ VNXX STATUS, GND Schottky W LOAD Diode | SC04671 POWER GND Figure 4: Typical Application Circuit With Separate Signal Ground Oo+Vec 10KQ STATUS CONTROL OUTPUT UNIT GND LOAD $C07145 POWER GND 6/9VNOSNSP Rosjon) S Junction Temperature GC13551 Ran) (m Q) J 200 | p=5.5A4 Yo V4 150 Z| Veo=20V 4 a rw 100 1S a 50 -50 0 50 1c0 6T,(%C) Rpsjon) Vs Output Current Rion) (m2) 250 700 150 100 30 0 4 B 12 16 20 I,fA} Output Current Derating GOS8510 Roston} (a) 6.0 3.9 5.0 4.5 4.0 0.5 1.0 1.5 2.0 2.5 IpfA} 4| Rosion) Vs Supply Voltage GO13561 Rvond {m 2) 700 600 500 400 300 200 9 9 100 ;425 asc 0 4 8 12 18 20 24 28 VoplV} Input Voltage vs Junction Temperature 6013581 Vins Vit (Vv) 2.8 2.4 0.8 0.4 G -50 0 50 100 T,(C) Open Load vs Junction Temperature lo (mA) 100 80 60 40 30VNOSNSP PowerSO-10 MECHANICAL DATA 8/9 1. SEATING PLANE Al DETAIL "A" | 0068039-C iyVNOSNSP Information furnished is believed tobe accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject tochange without notice. This publication supersedes and replaces allinformation previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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