Technische Information / Technical Information
Dioden-Modul mit Chopper-IGBT
Diode Module with Chopper-IGBT DD B6U 100 N 12...16 RR
Elektrische Eigenschaften / Electrical properties
Vorläufige Daten
Preliminary data
Höchstzulässige Werte / Maximum rated values
Netz-Diode / Rectifier diode
Periodische Spitzensperrspannung
Tvj = - 40°C...Tvj max
V
RRM
1200, 1400
V
repetitive peak reverse voltage
1600
Durchlaßstrom-Grenzeffektivwert (pro Element)
I
FRMSM
60
A
RMS forward current (per chip)
Ausgangsstrom
TC = 100°C
I
d
100
A
output current
TC = 97°C
104
A
Stoßstrom-Grenzwert
Tvj = 25°C, tp = 10ms
I
FSM
650
A
surge forward current
Tvj = Tvj max, tp = 10ms
550
A
Grenzlastintegral
Tvj = 25°C, tp = 10ms
I²t
2100
A²s
I²t-value
Tvj = Tvj max, tp = 10ms
1500
A²s
IGBT
Kollektor-Emitter-Sperrspannung
V
CES
1200
V
collector-emitter voltage
Kollektor-Dauergleichstrom
I
C
50
A
DC-collector current
Periodischer Kollektor-Spitzenstrom
tp = 1ms
I
CRM
100
A
repetitive peak collektor current
Gesamt-Verlustleistung
TC = 25°C
P
tot
350
W
total power dissipation
Gate-Emitter Spitzenspannung
V
GE
± 20
V
gate-emitter peak voltage
Schnelle Diode / Fast diode
Dauergleichstrom
I
F
25
A
DC forward current
Periodischer Spitzenstrom
tp = 1ms
I
FRM
50
A
repetitive peak forward current
Modul
Isolations-Prüfspannung
RMS, f = 50Hz, t = 1min
V
ISOL
2,5
kV
insulation test voltage
Charakteristische Werte / Characteristic values
Netz-Diode / Rectifier diode
min.
typ.
max.
Durchlaßspannung
Tvj = Tvj max, iF = 100A
v
F
1,55
V
forward voltage
Schleusenspannung
Tvj = Tvj max
V
(TO)
0,75
V
threshold voltage
Ersatzwiderstand
Tvj = Tvj max
r
T
5,5
m
Ω
forward slope resistance
Sperrstrom
Tvj = Tvj max, vR = VRRM
i
R
5
mA
reverse current
IGBT
Kollektor-Emitter Sättigungsspannung
Tvj = 25°C, iC = 50A, vGE = 20V
v
CE sat
2,5
3,2
V
collector-emitter saturation voltage
Tvj = 125°C, iC = 50A, vGE = 20V
3,1
Gate-Emitter-Schwellspannung
Tvj = 25°C, iC = 2mA, vGE = vCE
v
GE(TO)
4,5
5,5
6,5
V
gate-emitter threshold voltage
SDB-MA2; R. Jörke
29. Okt 99
A 105/97
Seite/page 1(3)
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Technische Information / Technical Information
Dioden-Modul mit Chopper-IGBT
Diode Module with Chopper-IGBT DD B6U 100 N 12...16 RR
Vorläufige Daten
Preliminary data
IGBT
min.
typ.
max.
Eingangskapazität
Tvj = 25°C, f0 = 1MHz,
C
ies
3,3
nF
input capacitance
vCE = 25V, vGE = 0V
Kollektor-Emitter Reststrom
Tvj = 25°C, vCE = 1200V, vGE = 0V
i
CES
0,8
1
mA
collector-emitter cut-off current
Tvj = 125°C, vCE = 1200V, vGE = 0V
4,0
Gate-Emitter Reststrom
Tvj = 25°C, vCE = 0V, vGE = 20V
i
GES
500
nA
gate leakage current
Emitter-Gate Reststrom
Tvj = 25°C, vCE = 0V, vEG = 20V
i
EGS
500
nA
gate-leakage current
Schnelle Diode / Fast diode
Durchlaßspannung
Tvj = 25°C, iF = 25A
v
F
2,3
2,9
V
forward voltage
Tvj = 125°C, iF = 25A
1,8
Sperrverzögerungsladung
iFM = 25A, -di/dt = 800A/µs, vR = 600V
Q
r
recovered charge
Tvj = 25°C
2,3
µAs
Tvj = 125°C
6,0
µAs
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
Netz-Diode / Rectifier diode,
Θ
= 120°rect
R
thJC
max.
1,15
°C/W
thermal resistance, junction to case
Transistor / Transistor, DC
max.
0,38
°C/W
Schnelle Diode / Fast diode, DC
max.
1,00
°C/W
Übergangs-Wärmewiderstand
Netz-Diode / Rectifier diode
R
thCK
max.
0,25
°C/W
thermal resistance, case to heatsink
Transistor / Transistor
max.
0,24
°C/W
Schnelle Diode / Fast diode
max.
0,30
°C/W
Höchstzulässige Sperrschichttemperatur
T
vj max
150
°C
max. junction temperature
Betriebstemperatur
T
c op
- 40...+150
°C
operating temperature
Lagertemperatur
T
stg
- 40...+150
°C
storage temperature
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
Seite 3
case, see appendix
page 3
Innere Isolation
Al
2
O
3
internal insulation
Anzugsdrehmoment für mechanische Befestigung
Toleranz / tolerance ±15%
M1
4
Nm
mounting torque
Gewicht
G
typ.
185
g
weight
Kriechstrecke
12,5
mm
creepage distance
Kühlkörper / heatsinks :
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung
mit den zugehörigen Technischen Erläuterungen. / This technical Information specifies semiconductor devices but promises no characteristics.
It is valid in combination with the belonging technical notes.
SDB-MA2; R. Jörke
Seite/page 2(3)
29. Okt 99
http://store.iiic.cc/
Technische Information / Technical Information
Dioden-Modul mit Chopper-IGBT
Diode Module with Chopper-IGBT DD B6U 100 N 12...16 RR
SDB-MA2; R. Jörke
29. Okt 99
Seite/page 3(3)
http://store.iiic.cc/
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