Data Sheet 1 of 8 Rev. 02.1, 2009-02-18
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTF080101M
PTF080101M
Package PG-RFP-10
RF Characteristics
Two-Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 16 — — dB
Drain Efficiency ηD35 — — %
Intermodulation Distortion IMD — — –28 dBc
High Power RF LDMOS Field Effect Transistor
10 W, 450 – 960 MHz
Description
The PTF080101M is an unmatched 10-watt GOLDMOS® FET intended for
class AB base station applications in the 450 MHz to 960 MHz band. This
LDMOS device offers excellent gain, efficiency and linearity performance in
a small footprint.
*See Infineon distributor for future availability.
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 180 mA, ƒ = 960 MHz
14
15
16
17
18
19
20
21
20 25 30 35 40 45
Output Power (dBm)
Gain (dB)
0
10
20
30
40
50
60
70
Drain Efficiency (%)
Efficiency
Gain
Features
•Typical EDGE performance
- Average output power = 5.0 W
- Gain = 19 dB
- Efficiency = 37%
- EVM = 2.0%
•Typical CW performance
- Output Power at P–1dB = 12.5 W
- Gain = 18 dB
- Efficiency = 50%
•Integrated ESD protection:
Human Body Model Class 1 (minimum)
•Excellent thermal stability
•Low HCI drift
•Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
•Pb-free and RoHS compliant
Data Sheet 2 of 8 Rev. 02.1, 2009-02-18
PTF080101M
*See Infineon distributor for future availability.
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) —0.83 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ150 °C
Total Device Dissipation PD18.8 W
Above 25°C derate by 0.15 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 10 W DC) RθJC 6.5 °C/W
Ordering Information
Type Package Outline Package Description Marking
PTF080101M PG-RFP-10 Molded plastic, SMD 0081
Data Sheet 3 of 8 Rev. 02.1, 2009-02-18
PTF080101M
Typical Performance (data taken in production test fixture)
Broadband Performance
VDD = 28 V, IDQ = 180 mA, POUT = 40 dBm
-20
-10
0
10
20
30
880 900 920 940 960 980 1000
Frequency (MHz)
Gain (dB), Return Loss (dB)
10
20
30
40
50
60
Drain Efficiency (%)
Gain
Return Loss
Efficiency
Typical EDGE Performance
VDD = 28 V, IDQ = 180 mA, ƒ = 959.8 MHz
0
1
2
3
4
5
28 30 32 34 36 38
Output Power (dBm)
RMS EVM (Average %).
0
10
20
30
40
50
Drain Efficiency (%)
EVM
Efficiency
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 180 mA, ƒ = 959.8 MHz
-80
-70
-60
-50
-40
-30
26 28 30 32 34 36 38 40
Output Power (dBm)
Modulation Spectrum (dBc)
200 kHz
400 kHz
600 kHz
Two-tone Drive-up
VDD = 28 V, IDQ = 180 mA,
ƒ = 960 MHz, 1 MHz tone spacing
-70
-60
-50
-40
-30
-20
20 25 30 35 40
Output Power, avg. (dBm)
IMD (dBc)
0
10
20
30
40
50
Drain Efficiency (%)
Efficiency
IM3
IM7
IM5
Data Sheet 4 of 8 Rev. 02.1, 2009-02-18
PTF080101M
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
1.04
-20 020 40 60 80 100
Case Temperature (ºC)
Normalized Bias Voltage
0.05
0.28
0.51
0.74
0.97
1.2
Typical Performance (cont.)
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
820 3.73 2.10 10.41 3.92
840 3.81 2.22 9.61 4.14
860 3.83 2.30 9.00 4.48
880 3.76 2.39 8.55 4.89
900 3.61 2.50 8.24 5.32
920 3.37 2.69 8.02 5.76
940 3.08 2.96 7.89 6.20
960 2.76 3.35 7.84 6.63
980 2.43 3.86 7.85 7.04
1000 2.13 4.47 7.91 7.43
Data Sheet 5 of 8 Rev. 02.1, 2009-02-18
PTF080101M
Reference circuit schematic for ƒ = 960 MHz
Circuit Assembly Information
DUT PTF080101M LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 4.5 Rogers TMM4 2 oz. copper
Microstrip Electrical Characteristics at 960 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.016 λ, 50.0Ω2.77 x 1.27 0.109 x 0.050
l20.132 λ, 75.0 Ω25.65 x 0.64 1.010 x 0.025
l30.028 λ, 50.0 Ω4.83 x 1.27 0.190 x 0.050
l40.101 λ, 50.0 Ω17.20 x 1.27 0.677 x 0.050
l50.015 λ, 10.0 Ω2.39 x 11.99 0.094 x 0.472
l60.086 λ, 10.0 Ω13.08 x 11.99 0.515 x 0.472
l70.050 λ, 10.0 Ω7.65 x 11.99 0.301 x 0.472
l80.106 λ, 73.0 Ω18.49 x 0.64 0.728 x 0.025
l90.086 λ, 73.0 Ω15.16 x 0.64 0.597 x 0.025
l10 0.020 λ, 29.0 Ω3.30 x 3.30 0.130 x 0.130
l11 0.061 λ, 12.5 Ω9.42 x 9.19 0.371 x 0.362
l12 0.111 λ, 12.5 Ω17.53 x 9.19 0.690 x 0.362
l13 0.022 λ, 12.5 Ω3.35 x 9.19 0.132 x 0.362
l14 0.028 λ, 73.0 Ω4.90 x 0.64 0.193 x 0.025
l15 0.100 λ, 73.0 Ω17.53 x 0.64 0.690 x 0.025
l16 0.070 λ, 50.0 Ω11.94 x 1.22 0.470 x 0.048
l17 0.016 λ, 50.0 Ω2.67 x 1.22 0.105 x 0.048
1Electrical characteristics are rounded.
RF_IN RF_OUT
080101m_sch
R5
10 V
36pF
5.1pF
l3
DUT
C7
l8
C8
R8
l910 V
l4l5l6l7
10pF
C9
l1
l2
36pF
36pF 10µF 1µF
VDD
l15
C11 C13
C12
C15
50V
l10 l11 l12 l13 l16
4.5pF
C14
l17
3.1pF
C16
l14
36pF
C10
10µF
35V
C4 36pF
C5
0.1µF R7 C6
R6
5.1KV
5.1K V
R3
1K V
R4
2K V
C3
0.001µF
BCP56
Q1
R2
1.3K V
R1
1.2K V
LM7805
QQ1
C2
0.001µF
VDD
C1
0.001µF
Reference Circuit
Data Sheet 6 of 8 Rev. 02.1, 2009-02-18
PTF080101M
Reference Circuit (cont.)
Reference circuit assembly diagram (not to scale)*
*Gerber Files for this circuit available on request
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND
C5 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6, C8, C10, C11, Ceramic capacitor, 36 pF ATC 100B 360
C15
C7 Ceramic capacitor, 5.1 pF ATC 100B 5R1
C9 Ceramic capacitor, 10 pF ATC 100B 100
C12 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPS106K050R0400
C13 Capacitor, 1.0 µF Toshiba C4532XTRZA105M
C14 Ceramic capacitor, 4.5 pF ATC 100B 4R5
C16 Ceramic capacitor, 3.1 pF ATC 100B 3R1
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip Resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip Resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3 Chip Resistor 1 k-ohms Digi-Key P1KECT-ND
R4 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R8 Chip Resistor 10 ohms Digi-Key P10ECT-ND
R6, R7 Chip Resistor 5.1 k-ohms Digi-Key P5.1KECT-ND
080101M_C_02
080101m_assy
RF_IN RF_OUT
LM
10
35V
+
C5
R8
R4
Q1
QQ1
C3
C1
R1
C2
R2
R5
C4
R3
C6 R6 R7
C7
C9
C8
C10
C11
C14
C12 C13
C16
C15
VDD
VDD
Data Sheet 7 of 8 Rev. 02.1, 2009-02-18
PTF080101M
M
PG-RFP-10
0.85 ±0.1
0.09
3 ±0.1
0.42
0.125
6° M
AX.
H
0.1 A
4.9 0.25 A B C
0.08 M
0.22 ±0.05
0.15 MAX.
1.1 MAX.
A
C
0.5
10 6
51
3 ±0.1 B
Index marking
A B C
+0.15
–0.10
+0.08
–0.05
Notes: Unless otherwise specified
1. Dimensions are mm
2. Lead thickness: 0.09
3. Pins: 1 – 5 = gate, underside = source, 6 – 10 = drain
Package Outline Specifications
Package PG-RFP-10 (TSSOP-10 Outline)
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet 8 of 8 Rev. 02.1, 2009-02-18
PTF080101M
Confidential—Limited Distribution
Revision History: 2009-02-18 Data Sheet
Previous version: 2005-12-16, Data Sheet
Page Subjects (major changes since last revision)
4Add Temperature graph and impedance information.
5 – 6 Add circuit information.
all Remove Preliminary status
6Fixed typing error
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Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
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or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-18
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
