DATA SH EET
Product specification
Supersedes data of February 1994 1996 May 30
DISCRETE SEMICONDUCTORS
BYV26 series
Fast soft-recovery
controlled avalanche rectifiers
handbook, 2 columns
M3D116
1996 May 30 2
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV26 series
FEATURES
•Glass passivated
•High maximum operating
temperature
•Low leakage current
•Excellent stability
•Guaranteed avalanche energy
absorption capability
•Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BYV26A −200 V
BYV26B −400 V
BYV26C −600 V
BYV26D −800 V
BYV26E −1000 V
BYV26F −1200 V
BYV26G −1400 V
VRcontinuous reverse voltage
BYV26A −200 V
BYV26B −400 V
BYV26C −600 V
BYV26D −800 V
BYV26E −1000 V
BYV26F −1200 V
BYV26G −1400 V
IF(AV) average forward current Ttp =85°C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYV26A to E −1.00 A
BYV26F and G −1.05 A
IF(AV) average forward current Tamb =60°C; PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYV26A to E −0.65 A
BYV26F and G −0.68 A
IFRM repetitive peak forward current Ttp =85°C; see Figs 6 and 7
BYV26A to E −10.0 A
BYV26F and G −9.6 A
1996 May 30 3
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV26 series
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
IFRM repetitive peak forward current Tamb =60°C; see Figs 8 and 9
BYV26A to E −6.0 A
BYV26F and G −6.4 A
IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
j max
prior to surge; VR=V
RRMmax
−30 A
ERSM non-repetitive peak reverse
avalanche energy IR= 400 mA; Tj=T
j max prior to
surge; inductive load switched off −10 mJ
Tstg storage temperature −65 +175 °C
Tjjunction temperature see Figs 12 and 13 −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFforward voltage IF= 1 A; Tj=T
j max;
see Figs 14 and 15
BYV26A to E −−1.3 V
BYV26F and G −−1.3 V
VFforward voltage IF=1A;
see Figs 14 and 15
BYV26A to E −−2.50 V
BYV26F and G −−2.15 V
V(BR)R reverse avalanche breakdown
voltage IR= 0.1 mA
BYV26A 300 −−V
BYV26B 500 −−V
BYV26C 700 −−V
BYV26D 900 −−V
BYV26E 1100 −−V
BYV26F 1300 −−V
BYV26G 1500 −−V
I
Rreverse current VR=V
RRMmax; see Fig.16 −− 5µA
V
R
=V
RRMmax;
Tj= 165 °C; see Fig.16 −−150 µA
trr reverse recovery time when switched from
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.20
BYV26A to C −−30 ns
BYV26D and E −−75 ns
BYV26F and G −−150 ns
Cddiode capacitance f = 1 MHz; VR=0V;
see Figs 17 and 18
BYV26A to C −45 −pF
BYV26D and E −40 −pF
BYV26F and G −35 −pF
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1996 May 30 4
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV26 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19.
For more information please refer to the
“General Part of associated Handbook”
.
maximum slope of reverse recovery
current when switched from
IF= 1 A to VR≥30 V and
dIF/dt = −1A/µs;
see Fig.21
BYV26A to C −− 7A/µs
BYV26D and E −− 6A/µs
BYV26F and G −− 5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
Rth j-a thermal resistance from junction to ambient note 1 100 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dIR
dt
--------
1996 May 30 5
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV26 series
GRAPHICAL DATA
handbook, halfpage
0 200
1
0
MSA855
0.5
100 Ttp ( C)
o
IF(AV)
(A)
20 15 10 lead length (mm)
BYV26A to E
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
Fig.2 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
BYV26F and G
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
Fig.3 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
handbook, halfpage
0 200
2
0
MLB533
1
100 Ttp ( C)
o
IF(AV)
(A)
lead length 10 mm
handbook, halfpage
0 200
1
0
MSA856
0.5
100 T ( C)
o
IF(AV)
(A)
amb
BYV26A to E
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
Fig.4 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
Fig.5 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
BYV26F and G
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
handbook, halfpage
0 200
1
0
MLB534
0.5
100 T ( C)
o
IF(AV)
(A)
amb
1996 May 30 6
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV26 series
12
0
4
10 210 111010
2103104
MSA860
8
10
2
6
t (ms)
p
IFRM
(A)
= 0.05
δ
0.1
0.2
0.5
1
BYV26A to E.
Ttp =85°C; Rth j-tp = 46 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYV26F and G.
Ttp =85°C; Rth j-tp = 46 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
0
4
10 211010
210 3104
MLB535
8
t (ms)
p
10 1
IFRM
(A)
2
6
10
= 0.05
δ
0.1
0.2
0.5
1
1996 May 30 7
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV26 series
6
0
2
10 210 111010
2103104
MSA859
4
5
1
3
t (ms)
p
IFRM
(A) = 0.05δ
0.1
0.2
0.5
1
BYV26A to E
Tamb =60°C; Rth j-a = 100 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYV26F and G
Tamb =60°C; Rth j-a = 100 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
0
4
10 211010
210 3104
MLB536
8
t (ms)
p
10 1
IFRM
(A)
2
6= 0.05
δ
0.1
0.2
0.5
1
1996 May 30 8
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV26 series
01
2
0
1
P
(W)
MSA854
0.5 IF(AV)(A)
2 1.57
1.42
3
a = 3 2.5
BYV26A to E
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
BYV26F and G
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
01
2
0
1
P
(W)
MLB532
0.5 IF(AV)(A)
3
1.42
a = 3 2.5 2
1.57
BYV26A to E
Solid line = VR.
Dotted line = VRRM;δ= 0.5.
Fig.12 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
200
0 400 1200
0
MSA857
800
100
V (V)
R
Tj
( C)
o
ABCDE
BYV26F and G
Solid line = VR.
Dotted line = VRRM;δ= 0.5.
Fig.13 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
200
0 2000
0
MLB599
1000
100
V (V)
R
Tj
( C)
o
FG
1996 May 30 9
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV26 series
BYV26A to E
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.14 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
024 8
8
(A)
IF
6
2
0
4
MSA853
6VF (V)
BYV26F and G
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.15 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
02 6
8
(A)
IF
6
2
0
4
MBD427
4VF (V)
Fig.16 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
MGC550
0 100 200
10
3
10
2
10
1
(µA)
IR
Tj (°C)
VR=V
RRMmax.BYV26A to E
f = 1 MHz; Tj=25°C.
Fig.17 Diode capacitance as a function of reverse
voltage, typical values.
handbook, halfpage
1
MSA858
10 102103
1
102
10
V (V)
R
Cd
(pF)
BYV26A,B,C
BYV26D,E
1996 May 30 10
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV26 series
handbook, halfpage
1
MBD437
10 10
2
10
4
1
10
2
10
V (V)
R
Cd
(pF)
10
3
BYV26F and G
f = 1 MHz; Tj=25°C.
Fig.18 Diode capacitance as a function of reverse
voltage, typical values. Fig.19 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
handbook, full pagewidth
10 Ω
1 Ω
50 Ω
25 V
DUT
MAM057
+trr
0.5
0
0.5
1
IF
(A)
IR
(A)
t
0.25
Fig.20 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤7 ns.
Source impedance: 50 Ω; tr≤15 ns.
1996 May 30 11
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV26 series
Fig.21 Reverse recovery definitions.
n
dbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
1996 May 30 12
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers BYV26 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.22 SOD57.
Dimensions in mm.
The marking band indicates the cathode.
handbook, full pagewidth
,
,
,
3.81
max
MBC880
ka
28 min28 min 4.57
max
0.81
max
