OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue C 03/2012
Page 1 of 4
Plastic Infrared Emitting Diode
OP265, OP266 Series
(A, B, C, D, W)
Features:
• T-1 (3 mm) package style
• Choice of narrow or wide irradiance pattern
• Choice of dome or flat lens
• Mechanically and spectrally matched to other OPTEK devices
• Higher power output than GaAs at equivalent drive currents
• 890 nm diodes
Description:
Each device in the OP265 and OP266 series is a high intensity gallium arsenide infrared emitting diode (GaAIAs)
that is molded in an IR transmissive clear epoxy package with either a dome or flat lens. Devices feature narrow
and wide irradiance patterns and a variety of electrical characteristics. The small T-1 package style makes these
devices ideal for space-limited applications.
OP265 devices conform to the OP505 a nd OP535 series device s. OP266 devices conform to OP506 series
devices.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Applications:
• Space-limited applications
• Applications requiring coupling
efficiency
• Battery-operated or voltage-limited
applications
RoHS
Ordering Information
Part
Number LED Peak
Wavelength Output Power (mW/
cm2) Min / Max IF (mA)
Typ / Max Total Beam
Angl e Lead
Length
OP265A
890 nm
2.70 / NA
20 / 50
18°
OP265B 1.65 / 4.70
OP265C 0.54 / 3.30
OP265D 0.54 / NA
OP265W 1.00 / NA 90°
OP266A 2.70 / NA
18°
OP266B 1.65 / 4.70
OP266C 0.54 / 3.30
OP266D 0.54 / NA
OP266W 1.00 / NA 90°
0.50"
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue C 03/2012
Page 2 of 4
Plastic Infrared Emitting Diode
OP265, OP266 Series
(A, B, C, D, W)
OP265W OP265 (A, B, C, D)
OP266W OP266 (A, B, C, D)
CONTAINS POLYSULFONE
To avoid stress cracking, we suggest using
ND Industries’ Vibra-Tite for thread-locking.
Vibra-Tite evaporates fast without causing structural
failure in OPTEK'S molded plastics.
Pin # LED
1 Cathode
2 Anode
1
2
INCHES
[MILLIMETERS]
DIMENSIONS ARE IN:
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue C 03/2012
Page 3 of 4
Plastic Infrared Emitting Diode
OP265, OP266 Series
(A, B, C, D, W)
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Storage and Operating Temperature Range -40o C to +100o C
Reverse Voltage 2.0 V
Continuous Forward Current 50 mA
Peak Forward Current (1 µs pulse width, 300 pps) 3.0 A
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C
Power Dissipation 100 mW(1)
Elect rical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
EE (APT)
Apertured Radiant Incidence
OP265A, OP266A
OP265B, OP266B
OP265C, OP266C
OP265D, OP266D
2.70
1.65
0.54
0.54
-
-
-
-
-
4.70
3.30
-
mW/cm2 IF = 20 mA(2)
PO
Radiant Power Output
OP265, OP266 (A, B, C, D)
OP265W, OP266W
-
1.00
-
-
-
-
mW IF = 20 mA
VF Forward Voltage - - 1.80 V IF = 20 mA
IR Reverse Current - - 100 µA VR= 2 V
λP Wavelength at Peak Emission - 890 - nm IF = 10 mA
B Spectral Bandwidth between Half Power
Points
-
80
- nm IF = 10 mA
∆λP /∆T
Spectral Shift with Temperature
OP265, OP266 (A, B, C, D)
OP265W, OP266W
-
-
±0.30
±0.18
-
-
nm/°C IF = Constant
θHP
Emission Angle at Half Power Points
OP265, OP266 (A, B, C, D)
OP265W, OP266W
-
-
18
90
-
-
Degree IF = 20 mA
tr Output Rise Time - 500 - ns
tf Output Fall Time - 250 - ns IF(PK)=100 mA, PW=10 µs, D.C.=10.0%
Notes:
1. Derate linearly 1.33 mW/°C above 25°C
2. EE(APT) is a measurement of the average apertured rediant incidence
ipon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to
and centered on the mechanical axis of the lens, and 0.590” (14.99
mm) from the measurement surface. EE(APT) is not necessarily
uniform within the measured areas.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue C 03/2012
Page 4 of 4
Plastic Infrared Emitting Diode
OP265, OP266 Series
(A, B, C, D, W)
OP265, OP266 (A, B, C, D, W)
Forward Voltage vs Forward Current vs
Temperature
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0 102030405060708090100
Forward Current (mA)
Typical For ward Voltage (V)
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120°C
Optical Power vs I
F
vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 102030405060708090100
Forward Current I
F
(mA)
Normalized Optical Power
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120° C
Normal iz ed at 50 m A and 20° C
Relative Radiant Intensity vs. Angula r
Displacement
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-20 -15 -10 -5 0 5 10 15 20
Angul ar D i sp l ace ment (Deg ree s)
Relative Radiant Intensity
Distance vs Output Power vs Forward Current
0
1
2
3
4
5
6
0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 ''
Distance (inches)
Normalized Output Power
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
70 mA
80 mA
90 mA
100 mA
Normalized at 1" and 50 m
A
Forward Current
-40 -30 -20 -10 0 10 20 30 40
