1/9October 2001
IRF630M
IRF630MFP
N-CHANNEL 200V - 0.35
Ω
- 9A TO-220/TO-220FP
MESH OVERLAYMOSFET
■TYPICAL RDS(on) = 0.35 Ω
■EXTREMELY HIGH dv/dt CAPABILITY
■VERY LOW INTRINSIC CAPACITANCES
■GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the compa-
ny’s consolidated strip layout-based MESH OVER-
LAYprocess. This technology matches and
improves theperformances compared with standard
parts from various sources.
Isolated TO-220option simplifies assembly andcuts
risk of accidental short circuit in crowded monitor
PCB’s.
.APPLICATIONS
■MONITOR DISPLAYS
■GENERAL PURPOSE SWITCH
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limitedby safe operating area
TYPE VDSS RDS(on) ID
IRF630M 200 V < 0.40 Ω9A
IRF630FPM 200 V < 0.40 Ω9A
Symbol Parameter Value Unit
IRF630M IRF630MFP
VDS Drain-source Voltage (VGS =0) 200 V
VDGR Drain-gate Voltage (RGS =20kΩ)200 V
VGS Gate- source Voltage ±20 V
IDDrain Current (continuos) at TC=25°C9 9 (**) A
IDDrain Current (continuos) at TC= 100°C5.7 5.7 (**) A
IDM (●)Drain Current (pulsed) 36 36 A
PTOT Total Dissipation at TC=25°C75 30 W
Derating Factor 0.6 0.24 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 5 5 V/ns
VISO Insulation Winthstand Voltage (DC) -- 2500 V
Tstg Storage Temperature –65 to 150 °C
TjMax. Operating Junction Temperature 150 °C
(1)ISD ≤9A, di/dt ≤300A/µs, VDD ≤V(BR)DSS,T
j≤T
JMAX.
(**) Limited only by Maximum Temperature Allowed
INTERNAL SCHEMATIC DIAGRAM
123
TO-220
123
TO-220FP
IRF630M / FP
2/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.67 4.17 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
TlMaximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID= 250 µA, VGS = 0 200 V
IDSS Zero Gate Voltage
Drain Current (VGS =0) V
DS = Max Rating 1µA
VDS = Max Rating, TC= 125 °C50 µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS =±20V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =V
GS,I
D= 250µA234V
R
DS(on) Static Drain-source On
Resistance VGS = 10V, ID= 4.5 A 0.35 0.40 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS >I
D(on) xR
DS(on)max,
ID= 4.5 A 34 S
C
iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 540 700 pF
Coss Output Capacitance 90 120 pF
Crss Reverse Transfer
Capacitance 35 50 pF
3/9
IRF630M / FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 100 V, ID= 4.5 A
RG= 4.7ΩVGS =10V
(see test circuit, Figure 3)
10 14 ns
trRise Time 15 20 ns
QgTotal Gate Charge VDD = 160V, ID=9A,
V
GS = 10V 31 45 nC
Qgs Gate-Source Charge 7.5 nC
Qgd Gate-Drain Charge 9 nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff) Off-voltage Rise Time VDD = 160V, ID=9A,
R
G=4.7Ω, VGS = 10V
(see test circuit, Figure 5)
12 17 ns
tfFall Time 12 17 ns
tcCross-over Time 25 35 ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 9 A
ISDM (2) Source-drain Current (pulsed) 36 A
VSD (1) Forward On Voltage ISD = 9 A, VGS =0 1.5 V
trr Reverse Recovery Time ISD = 9 A, di/dt = 100A/µs
VDD =50V,T
j= 150°C
(see test circuit, Figure 5)
170 ns
Qrr Reverse Recovery Charge 0.95 µC
IRRM Reverse Recovery Current 11 A
Safe Operating Area for TO-220FPSafe Operating Area for TO-220
IRF630M / FP
4/9
Static Drain-source On ResistanceTransconductance
Transfer Characteristics
Output Characteristics
Thermal Impedence for TO-220 Thermal Impedence for TO-220FP
5/9
IRF630M / FP
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
Normalized Gate Threshold Voltage vs Temp.
Gate Charge vs Gate-source Voltage
IRF630M / FP
6/9
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
7/9
IRF630M / FP
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
IRF630M / FP
8/9
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
9/9
IRF630M / FP
Information furnished is believed to beaccurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. Thispublication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademarkof STMicroelectronics
2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronicsGROUP OF COMPANIES
Australia -Brazil - China - Finland- France- Germany- Hong Kong - India- Italy- Japan - Malaysia -Malta -Morocco -
Singapore - Spain -Sweden - Switzerland -United Kingdom - U.S.A.
http://www.st.com
